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Jin C, Tang X, Sun Q, Mu C, Krasheninnikov AV, Kou L. Robust Magnetoelectric Coupling in FeTiO 3/Ga 2O 3 Non-van der Waals Heterostructures. J Phys Chem Lett 2024:2650-2657. [PMID: 38422484 DOI: 10.1021/acs.jpclett.4c00029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.
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Affiliation(s)
- Cui Jin
- School of Science, Shandong Jianzhu University, Jinan 250101, China
| | - Xiao Tang
- College of Science, Nanjing Forestry University, Nanjing 210037, China
| | - Qilong Sun
- School of Science, Shandong Jianzhu University, Jinan 250101, China
| | - Chenxi Mu
- School of Science, Shandong Jianzhu University, Jinan 250101, China
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Finland
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4001, Australia
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Zhang Y, Shen Y, Liu J, Lv L, Zhou M, Yang X, Meng X, Zhang B, Zhou Z. Symmetry-breaking-induced ferroelectric HfSnX 3 monolayers and their tunable Janus structures: promising candidates for photocatalysts and nanoelectronics. Phys Chem Chem Phys 2023; 25:22889-22899. [PMID: 37589090 DOI: 10.1039/d3cp02844e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Designing novel two-dimensional (2D) ferroelectric materials by symmetry breaking and studying their mechanisms play important roles in the discovery of new ferroelectric photocatalysts and nanoelectronics. In this study, we have systematically investigated a series of novel ferroelectric 2D HfSnX3 (X = S, Se and Te) monolayers through first-principles calculations. We found that each HfSnX3 monolayer contains a stable ferroelectric phase (FP) and a paraelectric phase (PP). The large polarization (up to 1.64 μC cm-2) in the FP can significantly bend the oxidation reduction potential of water, making HfSnX3 monolayers become excellent ferroelectric photocatalysts. Specifically, by designing a Janus structure to break the symmetry of the PP, we have excitingly obtained a stable Hf2GeSnSe6 (referred to as HGSS) monolayer with triple polarized states. HGSS not only possesses great visible light absorption properties (about 3 × 105 cm-1) as photocatalysts but also successfully solves the dead layer problem previously reported in practical applications. In addition, by constructing a heterostructure with graphene, HGSS has great application in the design of controllable ultrathin p-n junctions. Overall, our study not only predicts a series of potential ferroelectric photocatalytic materials, but also provides valuable insights for designing tunable polarized materials and nanoelectronics.
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Affiliation(s)
- Yu Zhang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Yanqing Shen
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
- Heilongjiang Provincial Key Laboratory of Plasma Physics and Application Technology, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Jiajia Liu
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Lingling Lv
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Min Zhou
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Xin Yang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Xianghui Meng
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Bing Zhang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Zhongxiang Zhou
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
- Heilongjiang Provincial Key Laboratory of Plasma Physics and Application Technology, Harbin Institute of Technology, Harbin 150001, P. R. China
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Pang K, Xu X, Ku R, Wei Y, Ying T, Li W, Yang J, Li X, Jiang Y. Ferroelectricity and High Curie Temperature in a 2D Janus Magnet. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10133-10140. [PMID: 36774641 DOI: 10.1021/acsami.2c18812] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The breaking of the out-of-plane symmetry makes a two-dimensional (2D) Janus monolayer a new platform to explore the coupling between ferroelectricity and ferromagnetism. Using density functional theory in combination with Monte Carlo simulations, we report a novel phase-switchable 2D multiferroic material VInSe3 with large intrinsic out-of-plane spontaneous electric polarization and a high Curie temperature (Tc). The structural transition energy barrier between the two phases is determined to be 0.4 eV, indicating the switchability of the electric polarizations and the potential ferroelectricity. Carrier doping can boost the Curie temperature above room temperature, attributing to the enhanced magnetic exchange interaction. A transition from the ferromagnetic (FM) state to the antiferromagnetic (AFM) state can be induced by carrier doping in octahedra-VInSe3, while FM coupling is well-preserved in tetrahedron-VInSe3, which can be regulated to be either an XY or Ising magnet at an appropriate carrier concentration. These findings not only enrich the family of high-Tc low-dimensional monolayers but also offer a new direction for the design and multifunctional application of multiferroic materials.
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Affiliation(s)
- Kaijuan Pang
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Xiaodong Xu
- School of Material Science and Engineering, Harbin Institute of Technology, Harbin150001, China
| | - Ruiqi Ku
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Yadong Wei
- School of Material Science and Engineering, Harbin Institute of Technology, Harbin150001, China
| | - Tao Ying
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Weiqi Li
- School of Physics, Harbin Institute of Technology, Harbin150001, China
- State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi'an710024, China
| | - Jianqun Yang
- School of Material Science and Engineering, Harbin Institute of Technology, Harbin150001, China
| | - Xingji Li
- School of Material Science and Engineering, Harbin Institute of Technology, Harbin150001, China
| | - Yongyuan Jiang
- School of Physics, Harbin Institute of Technology, Harbin150001, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan030006, China
- Key Lab of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin150001, China
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He Z, Dou K, Du W, Dai Y, Huang B, Ma Y. Multiple Topological Magnetism in van der Waals Heterostructure of MnTe 2/ZrS 2. NANO LETTERS 2023; 23:312-318. [PMID: 36576995 DOI: 10.1021/acs.nanolett.2c04388] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Topological magnetism in low-dimensional systems is of fundamental and practical importance in condensed-matter physics and material science. Here, using first-principles and Monte Carlo simulations, we present that multiple topological magnetism (i.e., skyrmion and bimeron) can survive in van der Waals heterostructure MnTe2/ZrS2. Arising from interlayer coupling, MnTe2/ZrS2 can harbor a large Dzyaloshinskii-Moriya interaction. This, combined with exchange interaction, yields an intriguing skyrmion phase under a tiny magnetic field of 75 mT. Meanwhile, upon harnessing a small electric field, magnetic bimeron can be observed in MnTe2/ZrS2, suggesting the existence of multiple topological magnetism. Through interlayer sliding, both topological magnetisms can be switched on-off. In addition, the impacts of d∥ and Keff on these spin textures are revealed, and a dimensionless parameter κ is utilized to describe their joint effect. These explored phenomena and insights not only are useful for fundamental research in topological magnetism but also enable novel applications in nanodevices.
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Affiliation(s)
- Zhonglin He
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan250100, China
| | - Kaiying Dou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan250100, China
| | - Wenhui Du
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan250100, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan250100, China
| | - Yandong Ma
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan250100, China
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Ai W, Hu X, Yang J, Lu C, Sun L. Selective sensing properties and enhanced ferromagnetism in CrI 3monolayer via gas adsorption. NANOTECHNOLOGY 2022; 34:065202. [PMID: 36347026 DOI: 10.1088/1361-6528/aca0fa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2022] [Accepted: 11/08/2022] [Indexed: 06/16/2023]
Abstract
Recent fabrication of chromium triiodide (CrI3) monolayers has raised potential prospects of developing two-dimensional (2D) ferromagnetic materials for spintronic device applications. The low Curie temperature has stimulated further interest for improving the ferromagnetic stability of CrI3monolayer. Here, based on density functional theory calculations, we investigated the adsorption energy, charge transfer, electronic and magnetic properties of gases (CO, CO2, N2, NH3, NO, NO2, O2, and SO2) adsorption on the CrI3monolayer. It is found that CrI3is sensitive to the NH3, NO, and NO2adsorption due to the high adsorption energy and large charge transfer. The electrical transport results show that the conductivity of CrI3monolayer is significantly reduced with the adsorption of N-based gases, suggesting that CrI3exhibits superior sensitivity and selectivity toward N-based gases. In addition, the ferromagnetic stability and Curie temperature (TC) of CrI3monolayer can be effectively enhanced by the adsorption of magnetic gases (NO, NO2, O2). This work not only demonstrates that CrI3monolayer can be used as a promising candidate for gas sensing, but also brings further interest to tune the electronic and magnetic properties of 2D ferromagnetic materials via gas adsorption.
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Affiliation(s)
- Wen Ai
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Xiaohui Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Jian Yang
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Chunhua Lu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
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Shi A, Sun D, Zhang X, Ji S, Wang L, Li X, Zhao Q, Niu X. Direct Z-Scheme Photocatalytic System: Insights into the Formative Factors of Photogenerated Carriers Transfer Channel from Ultrafast Dynamics. ACS Catal 2022. [DOI: 10.1021/acscatal.2c01959] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Affiliation(s)
- Anqi Shi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Dazhong Sun
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xuemei Zhang
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Shilei Ji
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Longlu Wang
- School of Optoelectronic Engineering and Grüenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xing’ao Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Qiang Zhao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- School of Optoelectronic Engineering and Grüenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xianghong Niu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
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Wan Y, Hu T, Mao X, Fu J, Yuan K, Song Y, Gan X, Xu X, Xue M, Cheng X, Huang C, Yang J, Dai L, Zeng H, Kan E. Room-Temperature Ferroelectricity in 1T^{'}-ReS_{2} Multilayers. PHYSICAL REVIEW LETTERS 2022; 128:067601. [PMID: 35213175 DOI: 10.1103/physrevlett.128.067601] [Citation(s) in RCA: 31] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2021] [Accepted: 12/23/2021] [Indexed: 05/27/2023]
Abstract
van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization of this type of ferroelectricity is scarce at the current stage. Here, we demonstrate robust sliding ferroelectricity in semiconducting 1T^{'}-ReS_{2} multilayers via a combined study of theory and experiment. Room-temperature vertical ferroelectricity is observed in two-dimensional 1T^{'}-ReS_{2} with layer number N≥2. The electric polarization stems from the uncompensated charge transfer between layers and can be switched by interlayer sliding. For bilayer 1T^{'}-ReS_{2}, the ferroelectric transition temperature is estimated to be ∼405 K from the second harmonic generation measurements. Our results highlight the importance of interlayer engineering in the realization of atomic-scale ferroelectricity.
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Affiliation(s)
- Yi Wan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, and Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Ting Hu
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, and Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xiaoyu Mao
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Kai Yuan
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Yu Song
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi'an 710072, China
| | - Xuetao Gan
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi'an 710072, China
| | - Xiaolong Xu
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Mingzhu Xue
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Xing Cheng
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Chengxi Huang
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, and Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jinbo Yang
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Lun Dai
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Erjun Kan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, and Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
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