Work function of metals

Organic thermoelectric device utilizing charge transfer interface as the charge generation by harvesting thermal energy

We propose an organic thermoelectric device having a new power generation mechanism that extracts small-scale thermal energy, i.e., a few tens of millielectronvolts, at room temperature without a temperature gradient. We demonstrate a new operating mechanism based on an organic thermoelectric power generation architecture that uses the charge separation capabilities of organic charge transfer (CT) interfaces composed of copper (II) phthalocyanine and copper (II) 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro-29H,31H-phthalocyanine as the donor and acceptor, respectively. With the optimized device architecture, values of open-circuit voltage VOC of 384 mV, short-circuit current density JSC of 1.1 μA/cm2, and maximum output Pmax of 94 nW/cm2 are obtained. The temperature characteristics of the thermoelectric properties yield activation energy values of approximately 20-60 meV, confirming the low-level thermal energy's contribution to the power generation mechanism. Furthermore, from surface potential analysis using a Kelvin probe, we confirm that charges are generated at the CT interface, and the electrons and holes are diffused to the counter-electrodes with the aid of Fermi-level alignment between adjacent layers.

Strain Effects in the Work Function and Charge Transfer of the Au(111) Surface

Work function (WF) is one of the most fundamental physical parameters of metal surfaces, which can not only reflect the electronic structure of metal surfaces but is also very sensitive to the surface microstructure. In this paper, we use first-principles calculations to systematically study the strain effects on the vacuum level, Fermi level, and WF of the Au(111) surface. We find that the vacuum level and Fermi level of the Au(111) surface increase under compressive strain and decrease under tensile strain, and the effects of biaxial strain on the vacuum level and Fermi level can be equivalent to the superposition of two perpendicular uniaxial strains. These strain effects are attributed to the charge transfer induced by the strain. However, the change of WF with strain is the result of the competition between the strain effects of the vacuum level and Fermi level. That leads to the WF increasing with compressive uniaxial strain and decreasing with tensile uniaxial strain. Moreover, because the Fermi level is more responsive to compressive uniaxial strain, the Fermi level changes faster than the vacuum level under compressive biaxial strain. Consequently, the WF decreases with increasing tensile biaxial strain and slightly increases before decreasing with increasing compressive biaxial strain.

Molecular Insights into the Stability of Titanium in Electrolytes Containing Chlorine and Fluorine Ions

Titanium and its alloys are protected by a compact and stable passive film, which confers resistance to corrosion by the primary halogen chloride (Cl-) while being less effective against fluoride (F-). Although researchers have recognized different macroscopic corrosion effects of these halide ions on titanium, the underlying mechanisms remain largely unexplored. In this work, the bonding of Cl-/F- with stable passive films was studied in neutral and acidic (pH = 2.3) conditions. The synergistic effect between the interfacial hydrogen bond (HB) structure and halogens on titanium corrosion was first revealed using first-principles calculation and Raman spectroscopy. F- forms more stable halogen-Ti bonds than Cl-, resulting in titanium degradation. The proton combined with F- exhibits a specific synergistic effect, causing corrosion of the passive film. The water hydrogen bond transformation index (HBTI) at the titanium/aqueous interface was 1.88 in an acidic solution containing F-, significantly higher than that in neutral/acid solutions containing Cl- (1.80/1.81) and a neutral solution containing F- (1.81). This work clarifies the structure-activity relationship between HBTI and the destruction of titanium passive films. We propose that the microstructure of the interfacial HB is an undeniable factor in the corrosion of titanium.

Density functional theory study of the corrosion inhibition performance of 6-mercaptopurine and 6-thioguanine expired drugs toward the aluminium (111) surface

The potentiality of the 6-mercaptopurine (MP) and 6-thioguanine (TG) expired drugs toward the corrosion inhibition of the aluminium (Al) (111) surface was widely investigated using a series of density functional theory (DFT) calculations. A competition between the anti-corrosive features of the studied drugs in the gas and aqueous phases was conducted on both neutral and protonated forms by means of quantum mechanical descriptors. The results of the electrostatic potential analysis demonstrated the prominent nucleophilic nature of the sulfur and nitrogen atoms over the structures of the examined drugs. The frontier molecular orbital theory findings outlined the higher preferability of TG over MP as a corrosion inhibitor. Upon determining the most beneficial configurations of the MP/TG⋯Al (111) complexes, first-principles molecular dynamics simulations were executed. Interestingly, the competence of the TG drug in the corrosion inhibition process of Al (111) was more extensive than that of the MP one, which was confirmed by the interaction energy values of -1.79 and -1.64 eV, respectively. Upon obtaining the relaxed complexes, the effect of the presence of water solvent on the adsorption process was studied. These findings provide a foundation for developing green anti-corrosive inhibitors for the aluminium surface.

Electron transfer rules of minerals under pressure informed by machine learning

Electron transfer is the most elementary process in nature, but the existing electron transfer rules are seldom applied to high-pressure situations, such as in the deep Earth. Here we show a deep learning model to obtain the electronegativity of 96 elements under arbitrary pressure, and a regressed unified formula to quantify its relationship with pressure and electronic configuration. The relative work function of minerals is further predicted by electronegativity, presenting a decreasing trend with pressure because of pressure-induced electron delocalization. Using the work function as the case study of electronegativity, it reveals that the driving force behind directional electron transfer results from the enlarged work function difference between compounds with pressure. This well explains the deep high-conductivity anomalies, and helps discover the redox reactivity between widespread Fe(II)-bearing minerals and water during ongoing subduction. Our results give an insight into the fundamental physicochemical properties of elements and their compounds under pressure.

Increased photocorrosion resistance of ZnO foams via transition metal doping

ZnO is a widely studied photocatalyst, but practical use is hindered by its low resistance to photocorrosion in water, which leads to metal leaching and loss of performance over time. In this work, highly porous and mechanically stable ZnO foams, called MolFoams, were doped by adding 1% or 2% Co, Ni or Cu salts to the starting Zn salt, followed by air insufflation during a sol-gel rection and sintering. The resulting doped foams showed a major increase in stability, with a 60-85% reduction in Zn2+ leaching after irradiation, albeit with a reduction in photocatalytic activity. A systematic analysis using XRD, Raman, XPS and XANES allowed for the identification of dopant species in the foams revealing the presence of Co3O4, NiO and Cu2O within the ZnO lattice with doping leading to a reduced band gap and significant increases in the resistance to photocorrosion of ZnO while identifying the cause of the reduction in photocatalytic activity to be shifting of the band edge positions. These results provide a pathway to significantly reduce the photocorrosion of ZnO in water, with further work required to maintain the photocatalytic activity of undoped ZnO.

Activity of Mono-, Bi-, and Trimetallic Catalysts Pt-Ni-Cr/C in the Bicyclohexyl Dehydrogenation Reaction

The influence of metals with different redox properties and a carbon carrier on the activity of mono-, bi- and trimetallic Pt-Ni-Cr/C catalysts has been studied in the bicyclohexyl dehydrogenation reaction as the hydrogen release stage in hydrogen storage. An increase in the conversion (X > 62%) of bicyclohexyl and selectivity for biphenyl (S > 84%) was observed on trimetallic catalysts Pt-Ni-Cr/C compared with the monometallic catalyst Rt/C (X > 55%; S > 68%). It has been established that the increase in the conversion of bicyclohexyl and selectivity for biphenyl in the dehydrogenation reaction on trimetallic catalysts is due to an increase in the activity of Pt nanoparticles in the vicinity of local Cr-Ni clusters of solid substitution solutions.

The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal–Semiconductor Field-Effect Transistors

We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga2O3 metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of the behavior of such devices. The gate work function significantly affects the reverse bias drain current under the gate-current dominant regime, whereas a gate-source/drain gap larger than 0.1 µm has a negligible effect on the drain current.

Flat band carrier confinement in magic-angle twisted bilayer graphene

Magic-angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating. Techniques to control the twist angle between graphene layers have led to rapid experimental progress but improving sample quality is essential for separating the delicate correlated electron physics from disorder effects. Owing to the 2D nature of the system and the relatively low carrier density, the samples are highly susceptible to small doping inhomogeneity which can drastically modify the local potential landscape. This potential disorder is distinct from the twist angle variation which has been studied elsewhere. Here, by using low temperature scanning tunneling spectroscopy and planar tunneling junction measurements, we demonstrate that flat bands in twisted bilayer graphene can amplify small doping inhomogeneity that surprisingly leads to carrier confinement, which in graphene could previously only be realized in the presence of a strong magnetic field.

Quantitative material analysis using secondary electron energy spectromicroscopy

This paper demonstrates how secondary electron energy spectroscopy (SEES) performed inside a scanning electron microscope (SEM) can be used to map sample atomic number and acquire bulk valence band density of states (DOS) information at low primary beam voltages. The technique uses an electron energy analyser attachment to detect small changes in the shape of the scattered secondary electron (SE) spectrum and extract out fine structure features from it. Close agreement between experimental and theoretical bulk valance band DOS distributions was obtained for six different test samples, where the normalised root mean square deviation ranged from 2.7 to 6.7%. High accuracy levels of this kind do not appear to have been reported before. The results presented in this paper point towards SEES becoming a quantitative material analysis companion tool for low voltage scanning electron microscopy (LVSEM) and providing new applications for Scanning Auger Microscopy (SAM) instruments.

Size-Controlled Au-Cu2Se Core-Shell Nanoparticles and Their Thermoelectric Properties

One promising approach to improving thermoelectric energy conversion is to use nanostructured interfaces that enhance Seebeck coefficient while reducing thermal conductivity. Here, we synthesized Au-Cu₂Se core-shell nanoparticles with different shell thicknesses by controlling the precursor concentration in solution. The Au-Cu₂Se core-shell nanoparticles are about 37-53 nm in size, and the cores of the nanostructures are composed of Au nanoparticles with sizes of ∼11 nm. The effect of shell thickness on the thermoelectric properties of core-shell nanocomposites is investigated after sintering the core-shell nanoparticles into pellets using the spark plasma sintering (SPS) technique. The power factor was optimized by the synergetic effect of the improvement of Seebeck coefficient by energy filtering in the Au/Cu₂Se interface and the effective tuning of carrier concentration by Ohmic contact in the interface. The lattice thermal conductivity of core-shell nanocomposites is reduced by coherent phonon scattering, which is caused by the wavelike interference of phonons due to the phase shift in the core-shell interface. The highest ZT value of 0.61 is obtained at 723 K for Au-Cu₂Se core-shell nanocomposite with a shell thickness of 21 nm, which is higher than that of pure Cu₂Se nanocomposite or a mixture of Au and Cu₂Se particles.

Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes through Using Work Function Tunable Cu Nanowires as the Top Transparent Electrode

Deep ultraviolet light-emitting diodes (DUV LEDs) (<280 nm) have been important light sources for broad applications in, e.g., sterilization, purification, and high-density storage. However, the lack of excellent transparent electrodes in the DUV region remains a challenging issue. Here, we demonstrate an architectural engineering scheme to flexibly tune the work function of Cu@shell nanowires (NWs) as top transparent electrodes in DUV LEDs. By fast encapsulation of shell metals on Cu NWs and a shift of electron binding energy, the electronic work function could be widely tailored down to 4.37 eV and up to 5.73 eV. It is revealed that the high work function of Cu@Ni and Cu@Pt NWs could overcome the interfacial barrier to p-AlGaN and achieve direct ohmic contact with high transparency (91%) in 200-400 nm. Completely transparent DUV LED chips are fabricated and successfully lighted with sharp top emission (wall-plug efficiency reaches 3%) under a turn-on voltage of 6.4 V. This architectural strategy is of importance in providing highly transparent ohmic electrodes for optoelectronic devices in broad wavelength regions.

Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

Two-dimensional randomly oriented nanowire (NW) networks, also called nanonets (NNs), have remarkable advantages including low-cost integration, good reproducibility and high sensitivity, which make them a promising material for electronic devices. With this work, we focus on the study of ZnO NNs as channel materials in field effect transistors (FETs). In our process, ZnO NWs were assembled in NNs by the liquid filtration method and were integrated in transistors, with the bottom-gate configuration, using simple technological steps. Non-encapsulated devices exhibited state of the art performances but their stability toward air exposure was poor. Using a proper encapsulation of the nanonets, with cheap, abundant and non-toxic oxides, we demonstrate our ability not only to stabilize their electrical properties, but also to enhance performance to values never reach before for ZnO NW-based transistors. Our best FETs exhibit a low Off-current while maintaining a very good On-current, which results in a I _on/I _off ratio exceeding 10⁶ for a drain voltage of 5 V. The behavior of these ZnO NN-based FETs was studied for three different encapsulation materials, alumina (Al₂O₃), tin oxide (SnO₂) and Al-doped ZnO (AZO). These results prove that ZnO NNs are highly promising materials for an easy and low-cost integration into FETs.

Connecting Solution-Phase to Single-Molecule Properties of Ni(Salophen)

We present a strong correlation of the Ni(salophen) structure and properties measured in single-molecule vs bulk quantities and in ultra high vacuum vs solution phase. Under a scanning tunneling microscope (STM), Ni(salophen) forms a self-assembled monolayer (SAM) on Au(111) at 23 °C with molecular structure identical to that of the X-ray crystallographic measurement. The HOMO and LUMO levels are determined using elastic tunneling spectroscopy at the single-molecule level with confirmation by monolayer-quantity ultraviolet photoelectron spectroscopy (UPS) and by cyclic voltammetry (CV) measurements. The STM-determined HOMO-LUMO gap of 3.28 eV and (HOMO-1)-HOMO gap of 0.36 eV form a new foundation for the selection of hybrid functionals with a simple basis set to be effective in accurately calculating single-molecule Ni(salophen) frontier MO levels. Our results suggest that microscopy-based experiments on a surface, along with free-molecule gas-phase calculations, can provide useful insights into the physical properties of metal(salen) complexes, especially when such direct measurements are not available in solution.

Multilayer graphene nanobelts on SWCNT films for high current interconnect applications

In this work we propose multilayer graphene (MLG) nanobelts for high current interconnections with single wall carbon nanotubes (SWCNT) and compare these with metal contacts. MLG contacts were directly printed on the SWCNT, without any additional metal parts, demonstrating the possibility to use these materials as interconnections in microelectronics. Different work function metals Al, Ti and Pd were probed for the lowest contact resistance with the SWCNT. Ti contacts demonstrated the best results among the metals owing to its work function being closest to the SWCNT and therefore giving the lowest Schottky barrier. Even though Ti contacts show the lowest contact resistance, the current density for MLG contacts was higher, giving the best results for high current interconnection applications. Moreover, MLG contacts show a stable and repeatable resistance decrease under high current conditions. Heat treatment of the MLG and metal contacts was completed in vacuum, in order to further reduce the contact resistance and optimal heat treatment conditions were found at 600 °C.

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

Redox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications beyond von Neumann computing. The prevailing, so-called, counter-eight-wise (c8w) polarity of the switching hysteresis in filamentary-type valence change mechanism devices originates from a temperature- and field-controlled drift-diffusion process of mobile ions, predominantly oxygen vacancies in the switching oxide. Recently, a bipolar resistive switching (BRS) process with opposite polarity, so-called, eight-wise (8w) switching, has been reported that, especially for TiO₂ cells, is still not completely understood. Here, we report on nanosized (<0.01 μm²) asymmetric memristive cells from 3 to 6 nm thick TiO₂ films by atomic layer deposition, which reveal a coexistence of c8w and 8w switching in the same cell. As important characteristics for the studied Pt/TiO₂/Ti/Pt devices, the resistance states of both modes are nonvolatile and share one common state; i.e., the high-resistance state of the c8w mode equals the low-resistance state of the 8w-mode. A transition between the opposite hysteresis loops is possible by voltage control. Specifically, 8w BRS in the TiO₂ cells is a self-limited low-energy nonvolatile switching process. Additionally, the 8w reset process enables the programming of multilevel high-resistance states. Combining the experimental results with data from simulation studies allows to propose a model, which explains 8w BRS by an oxygen transfer process across the Pt/TiO₂ Schottky interface at the position of the c8w filament. Therefore, the coexistence of c8w and 8w BRS in the nanoscale asymmetric Pt/TiO₂/Ti/Pt cells is understood from a competition between drift/diffusion of oxygen vacancies in the oxide layer and an oxygen exchange reaction across the Pt/TiO₂ interface.

Clear variation of spin splitting by changing electron distribution at non-magnetic metal/Bi2O3 interfaces

Large spin splitting at Rashba interface, giving rise to strong spin-momentum locking, is essential for efficient spin-to-charge conversion. Recently, a Cu/Bismuth oxide (Bi₂O₃) interface has been found to exhibit an efficient spin-to-charge conversion similar to a Ag/Bi interface with large Rashba spin splitting. However, the guiding principle of designing the metal/oxide interface for the efficient conversion has not been clarified yet. Here we report strong non-magnetic (NM) material dependence of spin splitting at NM/Bi₂O₃ interfaces. We employed spin pumping technique to inject spin current into the interface and evaluated the magnitude of interfacial spin-to-charge conversion. We observed large modulation and sign change in conversion coefficient which corresponds to the variation of spin splitting. Our experimental results together with first-principles calculations indicate that such large variation is caused by material dependent electron distribution near the interface. The results suggest that control of interfacial electron distribution by tuning the difference in work function across the interface may be an effective way to tune the magnitude and sign of spin-to-charge conversion and Rashba parameter at interface.

Metallic Bond-Enabled Wetting Behavior at the Liquid Ga/CuGa2 Interfaces

Interface interaction can strongly modify contact angle, adsorption energy, interfacial tension, and composition of the contact area. In particular, the interfaces between gallium-based liquid metal (LM) and its intermetallic layer present many mysterious and peculiar wetting phenomena, which have not been fully realized up to now. Here in this study, we found that a gallium-based liquid metal droplet can quickly transform into a puddle on the CuGa₂ surface through a spreading-wetting procedure. The mechanism lying behind this phenomenon can be ascribed to the formation of an intermetallic CuGa₂ on Cu plate surface, which provides a stable metallic bond to induce the wetting behavior. For a quantitative evaluation of the interface force, a metallic bond-enabled wetting model is established on the basis of the density functional theory. The first-principles density functional calculations are then performed to examine the work function, density of states, and adsorption energy. The predicted results show that the work function of CuGa₂ (010) is approximately 4.47 eV, which is very comparable with that of pure liquid Ga (4.32 eV). This indicates that the valence electrons between Ga and CuGa₂ slab can exchange easily, which consequently leads to the strong valence electron hybridization and metallic bond. In addition, the adsorption energy of a single Ga atom on CuGa₂ (010) slab has a larger value than In and Sn. The tested metallic bond wetting force at the interface is proportional to the average adsorption energy of the gallium-based LM adatom, and increases with the rising content of gallium. The simulation results demonstrate excellent consistency with the experimental data in this work.

Temperature and energy effects on secondary electron emission from SiC ceramics induced by Xe17+ ions

Secondary electron emission yield from the surface of SiC ceramics induced by Xe¹⁷⁺ ions has been measured as a function of target temperature and incident energy. In the temperature range of 463–659 K, the total yield gradually decreases with increasing target temperature. The decrease is about 57% for 3.2 MeV Xe¹⁷⁺ impact, and about 62% for 4.0 MeV Xe¹⁷⁺ impact, which is much larger than the decrease observed previously for ion impact at low charged states. The yield dependence on the temperature is discussed in terms of work function, because both kinetic electron emission and potential electron emission are influenced by work function. In addition, our experimental data show that the total electron yield gradually increases with the kinetic energy of projectile, when the target is at a constant temperature higher than room temperature. This result can be explained by electronic stopping power which plays an important role in kinetic electron emission.

One-step assembly of 2H-1T MoS2:Cu/reduced graphene oxide nanosheets for highly efficient hydrogen evolution

The transition metal dichagenides and their metallic 1T structure are attracting contemporary attentions for applications in high-performance devices because their peculiar optical and electrical properties. The single and few layers 1T structure is generally obtained by mechanical or chemical exfoliation. This work presents facile one-step synthesis of 2H-1T MoS₂:Cu/reduced graphene oxide nanosheets. The experiment results indicated that the MoS₂ and MoS₂:Cu prepared by simple chemical solution reaction possessed 2H-1T structures. The reduced graphene oxide (rGO) incorporation further induced the phase transition from 2H-MoS₂ to 1T-MoS₂ and morphology transition from granular/nanosheet to more nanosheet. The 2H-1T structure and 2H → 1T phase transition, together with the Cu doping and interface effect between the MoS₂ and rGO, remarkably enhanced the conduction and photoconduction of the nanostructures. Thus, Cu doping and rGO incorporation obviously enhanced the catalytic activity and its stability, making the MoS₂:Cu/rGO nanosheet a most active and stable catalyst for hydrogen evolution. This work clearly indicates that the 1T-MoS₂ nanosheets with high catalytic activity for hydrogen evolution can be easily obtained by the facile low temperature chemical method and induction of rGO.

A mini-review on rare earth metal-doped TiO2 for photocatalytic remediation of wastewater

Titanium dioxide (TiO2) has been considered a useful material for the treatment of wastewater due to its non-toxic character, chemical stability and excellent electrical and optical properties which contribute in its wide range of applications, particularly in environmental remediation technology. However, the wide band gap of TiO2 photocatalyst (anatase phase, 3.20 eV) limits its photocatalytic activity to the ultraviolet region of light. Besides that, the electron-hole pair recombination has been found to reduce the efficiency of the photocatalyst. To overcome these problems, tailoring of TiO2 surface with rare earth metals to improve its surface, optical and photocatalytic properties has been investigated by many researchers. The surface modifications with rare earth metals proved to enhance the efficiency of TiO2 photocatalyts by way of reducing the band gap by shifting the working wavelength to the visible region and inhibiting the anatase-to-rutile phase transformations. This review paper summarises the attempts on modification of TiO2 using rare earth metals describing their effect on the photocatalytic activities of the modified TiO2 photocatalyst.

Anomalous d-like surface resonances on Mo(110) analyzed by time-of-flight momentum microscopy

The electronic surface states on Mo(110) have been investigated using time-of-flight momentum microscopy with synchrotron radiation (hν=35 eV). This novel angle-resolved photoemission approach yields a simultaneous acquisition of the E-vs-k spectral function in the full surface Brillouin zone and several eV energy interval. (kx,ky,EB)-maps with 3.4 Å(-1) diameter reveal a rich structure of d-like surface resonances in the spin-orbit induced partial band gap. Calculations using the one-step model in its density matrix formulation predict an anomalous state with Dirac-like signature and Rashba spin texture crossing the bandgap at Γ¯ and EB=1.2 eV. The experiment shows that the linear dispersion persists away from the Γ¯-point in an extended energy- and k∥-range. Analogously to a similar state previously found on W(110) the dispersion is linear along H¯-Γ¯-H¯ and almost zero along N¯-Γ¯-N¯. The similarity is surprising since the spin-orbit interaction is 5 times smaller in Mo. A second point with unusual topology is found midway between Γ¯ and N¯. Band symmetries are probed by linear dichroism.

Impact of Electrode Density of States on Transport through Pyridine-Linked Single Molecule Junctions

We study the impact of electrode band structure on transport through single-molecule junctions by measuring the conductance of pyridine-based molecules using Ag and Au electrodes. Our experiments are carried out using the scanning tunneling microscope based break-junction technique and are supported by density functional theory based calculations. We find from both experiments and calculations that the coupling of the dominant transport orbital to the metal is stronger for Au-based junctions when compared with Ag-based junctions. We attribute this difference to relativistic effects, which result in an enhanced density of d-states at the Fermi energy for Au compared with Ag. We further show that the alignment of the conducting orbital relative to the Fermi level does not follow the work function difference between two metals and is different for conjugated and saturated systems. We thus demonstrate that the details of the molecular level alignment and electronic coupling in metal-organic interfaces do not follow simple rules but are rather the consequence of subtle local interactions.

Electron spectroscopy investigation of the oxidation of ultra-thin films of Ni and Cr on Fe(0 0 1)

We investigated the room temperature oxidation of ultra-thin Ni and Cr films grown on Fe(0 0 1). In particular, we characterized the degree of crystallinity and the stoichiometry of the oxide layers and addressed the chemical stability of the interface with the highly reactive Fe substrate by means of low-energy electron diffraction and x-ray and UV photoemission spectroscopy. In the Ni case we detected, upon oxidation, the formation of a Fe(3)O(4) layer covering the Ni oxide, due to the diffusion of Fe cations towards the surface. At high temperature and in ultra-high vacuum conditions, the Ni oxide dissolved and the Fe oxide layer was reduced to FeO. In the Cr case, we observed the formation of a thin Cr(2)O(3) oxide layer, showing a diffraction pattern compatible with a defective γ-Cr(2)O(3) phase. A thicker Cr oxide layer could be produced by oxidizing the sample at 300 °C, at the expense of the incorporation of trace amounts of Fe cations.

Spin-polarization properties and electronic structure of the ordered c(2 × 2) MnCu/Cu(1 1 0) surface alloy

The spin-ordering and electronic properties of the c(2 × 2) MnCu/Cu(1 1 0) surface alloy are investigated by means of ab initio density-functional calculations. We first address the magnetic ground state and the robustness of the spin-polarization properties. The lowest-energy state is found to be ferromagnetic with a very low Curie temperature, showing that the paramagnetic phase should be established in this system at room temperature. The calculated trends obtained for the various spin structures considered indicate that the local Mn-spin moment and resulting reduced work function as well as Mn-outward buckling should persist in the paramagnetic phase. We then address the electronic surface-band structure of the paramagnetic phase close to the Fermi energy, in connection with the interpretation of recent angle-resolved-photoemission-spectroscopy experiments at room temperature. Our calculations account for an intriguing new surface-band feature observed experimentally near the [Formula: see text] point upon alloy formation, and provide a microscopic interpretation for this feature and for the alloy-induced changes in the Cu(1 1 0) Shockley surface state.

Nanoscale characterization of TiO(2) films grown by atomic layer deposition on RuO(2) electrodes

Topography and leakage current maps of TiO2 films grown by atomic layer deposition on RuO2 electrodes using either a TiCl4 or a Ti(O-i-C3H7)4 precursor were characterized at nanoscale by conductive atomic force microscopy (CAFM). For both films, the leakage current flows mainly through elevated grains and not along grain boundaries. The overall CAFM leakage current is larger and more localized for the TiCl4-based films (0.63 nm capacitance equivalent oxide thickness, CET) compared to the Ti(O-i-C3H7)4-based films (0.68 nm CET). Both films have a physical thickness of ∼20 nm. The nanoscale leakage currents are consistent with macroscopic leakage currents from capacitor structures and are correlated with grain characteristics observed by topography maps and transmission electron microscopy as well as with X-ray diffraction.

Preparation and characterization of 4'-donor substituted stilbene-4-thiolate monolayers and their influence on the work function of gold

Self-assembled monolayers of E-stilbene-4-thiolate (SAM1), E-4'-(ethoxy)stilbene-4-thiolate (SAM2), and E-4'-(dimethylamino)stilbene-4-thiolate (SAM3) on Au(111) have been obtained from reaction of ethanol solutions of the corresponding S-acetyl derivatives with gold substrates. A combination of X-ray photoelectron spectroscopy, ellipsometry, and infrared reflection absorption spectroscopy indicates that the monolayers are dense (ca. 3.3 x 10(14) molecules/cm(2)) and that the long molecular axes of the thiolates are approximately perpendicular to the surface. Ultraviolet photoelectron spectroscopy shows that formation of these monolayers decreases the work function of pristine Au by 0.9-1.3 eV, in part due to a bond dipole of ca. 4.4 D/molecule formed upon adsorption and partly due to the molecular dipole moment arising from the 4'-pi-donor substituents. However, the extent of the work function variation between SAM1, 2, and 3 is smaller than anticipated from purely electrostatic considerations.