Electronic excitation in a syn-tetrasilane: 1,1,2,2,3,3, 4,4-octamethyltetrasilacyclopentane

Understanding the Effect of Conformation on Hole Delocalization in Poly(dimethylsilane)

Density functional theory calculations confirm that the simple explanation of the origin of the striking conformational dependence of σ-electron localization/delocalization in polysilanes offered by the extremely simple Ladder C model is correct.

Electronic transitions in conformationally controlled tetrasilanes with a wide range of SiSiSiSi dihedral angles

Unlike π-electron chromophores, the peralkylated n-tetrasilane σ-electron chromophore resembles a chameleon in that its electronic spectrum changes dramatically as its silicon backbone is twisted almost effortlessly from the syn to the anti conformation (changing the SiSiSiSi dihedral angle ω from 0 to 180°). A combination of UV absorption, magnetic circular dichroism (MCD), and linear dichroism (LD) spectroscopy on conformationally controlled tetrasilanes 1-9, which cover fairly evenly the full range of angles ω, permitted a construction of an experimental correlation diagram for three to four lowest valence electronic states. The free chain tetrasilane n-Si4 Me10 (10), normally present as a mixture of three enantiomeric conformer pairs of widely different angles ω, has also been included in our study. The spectral trends are interpreted in terms of avoided crossings of 1B with 2B and 2A with 3A states, in agreement with SAC-CI calculations on the excited states of 1-7 and conformers of 10.

Conformational dependence of sigma-electron delocalization in linear chains: permethylated oligosilanes

The effects of sigma-electron delocalization on optical properties of saturated linear chains of permethylated oligosilanes are strongly conformation dependent. We analyze the origin of the conformational dependence of the energies of molecular orbitals and of electronic excitations in simple intuitively understandable terms by using a first-order approximation to the Hückel version of the "Ladder C" model. The analysis is supported by comparison with results of numerical calculations from time-dependent density functional theory, which agree well with experiment. To facilitate the comparison, a simple procedure has been developed that defines the overall and local fractional sigma and pi characters of a backbone molecular orbital and a fractional overall and local sigma sigma* and sigma pi* characters of an excited state for any conformation of a linear chain.

Interpretation of the electronic spectra of four disilanes

Time-dependent density functional theory (TD-DFT/B3LYP(AC)/cc-pVTZ/cc-pVTZ/6-311G//MP2/cc-pVTZ/cc-pVTZ/6-31G**) has been used to compute vertical excitation energies and oscillator strengths of the six low-lying excited states of four peralkylated disilanes, hexamethyldisilane (1), hexa-tert-butyldisilane (2), 1,6-disila[4.4.4]propellane (3), and 1,7-disila[5.5.5]propellane (4). The results provide an accurate interpretation of the reported UV absorption spectra of 1-4 in solution, and for 1 also in the gas phase up to 62,000 cm(-1). The excellent agreement of the calculated with the available experimental energies and oscillator strengths, and with magnetic circular (MCD) and linear (LD) dichroism, gives us confidence that the method will be useful for dependable interpretation of the electronic spectra of longer oligosilanes. Although the disilane chromophore finds itself in quite different environments in 1-4, its fundamental characteristics remain the same, with one important exception. In all four compounds, the first valence excited state is due to an electron promotion from the sigma(1) HOMO to the pi(1)* orbital, and the second valence excited state to a promotion from the sigma(1) HOMO to the sigma(1)* orbital. Surprisingly, however, it is only in 2, which has an extraordinarily long SiSi bond, that the terminating sigma(1)* orbital is the sigma*(SiSi) antibond, as anticipated, and the sigma sigma* transition has the expected very high oscillator strength. In 1, 3, and 4, the sigma*(SiSi) antibonding orbital is high in energy and does not play any role in low-energy excitations. Instead, the terminating orbital of the sigma(1)sigma(1)* excitation is represented by Si-alkyl antibonds, combined symmetrically with respect to rotation around the SiSi axis and antisymmetrically with respect to operations that interchange the two Si atoms. The common assumption that the characteristic intense sigma sigma* transitions of longer peralkylated oligosilanes extrapolate to the lowest sigma sigma* transition in common peralkylated disilanes is incorrect, and only the weak sigma pi* transitions extrapolate simply.