Effect of Annealing Temperature on Morphology and Optoelectronics Properties of Spin-Coated CZTS Thin Films

Impact of 1,8-Diiodooctane (DIO) Additive on the Active Layer Properties of Cu2ZnSnS4 Kesterite Thin Films Prepared by Electrochemical Deposition for Photovoltaic Applications

Kesterite Cu₂ZnSnS₄ (CZTS) thin films using various 1,8-diiodooctane (DIO) polymer additive concentrations were fabricated by the electrochemical deposition method. The optical, electrical, morphological, and structural properties of the CZTS thin films synthesized using different concentrations of 5 mg/mL, 10 mg/mL, 15 mg/mL, and 20 mg/mL were investigated using different techniques. Cyclic voltammetry exhibited three cathodic peaks at -0.15 V, -0.54 V, and -0.73 V, corresponding to the reduction of Cu²⁺, Sn²⁺, Sn²⁺, and Zn²⁺ metal ions, respectively. The analysis of the X-ray diffraction (XRD) pattern indicated the formation of the pure kesterite crystal structure, and the Raman spectra showed pure CZTS with the A1 mode of vibration. Field emission scanning electron microscopy (FE-SEM) indicated that the films are well grown, with compact, crack-free, and uniform deposition and a grain size of approximately 4 µm. For sample DIO-20 mg/mL, the elemental composition of the CZTS thin film was modified to Cu:Zn:Sn: and S = 24.2:13.3:12.3:50.2, which indicates a zinc-rich and copper-poor composition. The X-ray photoelectron spectroscopy (XPS) results confirmed the existence of Cu, Sn, Zn, and S elements and revealed the element oxidation states. The electrochemical deposition synthesis increased the absorption of the CZTS film to more than 10⁴ cm^-1 with a band gap between 1.62 eV and 1.51 eV. Finally, the photovoltaic properties of glass/CZTS/CdS/n-ZnO/aluminum-doped zinc oxide (AZO)/Ag solar cells were investigated. The best-performing photovoltaic device, with a DIO concentration of 20 mg/mL, had a short-circuit current density of 16.44 mA/cm², an open-circuit voltage of 0.465 V, and a fill factor of 64.3%, providing a conversion efficiency of 4.82%.

Epitaxial Growth and Optical Properties of Laser Deposited CdS Thin Films

In this study, cadmium Sulfide (CdS) thin films were synthesized on quartz substrates using an infrared pulsed laser deposition (IR-PLD) technique under high vacuum (~10−6 Torr) conditions. X-ray diffraction was used to evaluate the structural features. According to X-ray analysis, the deposited CdS films are crystalline and have a favored orientation on a plane (110) of an orthorhombic. The peak intensity and the average crystallite size increases with increasing the film thickness. After annealing at 300 °C, the orthorhombic phase transformed into a predominant hexagonal phase and the same result was obtained by SEM photographs as well. Spectrophotometric measurements of transmittance and reflectance of the CdS films were used to derive optical constants (n, k, and absorption coefficient α). The optical band gap energy was found to be 2.44 eV. The plasma plume formation and expansion during the film deposition have also been discussed. The photocurrent response as a function of the incident photon energy E (eV) at different bias voltages for different samples of thicknesses (85, 180, 220 and 340 nm) have been studied, indicating that the photocurrent increases by increasing both the film thickness and photon energy with a peak in the vicinity of the band edge. Thus, the prepared CdS films are promising for application in optoelectronic field.

Blueshifted dielectric properties and optical conductivity of new nanoscale nickel-(II)-tetraphenyl-21H,23H-porphyrin films as a function of UV illumination for energy storage applications

Pristine thermally evaporated nickel-(II)-tetraphenyl-21H,23H-porphyrin (NiTPP) thin films are amorphous, but after 4 and 8 h of UV illumination, the films become crystalline with preferred orientations of (112), (103) and (004) and crystallite sizes of (13, 18, 16) and (42, 31, 38) nm after 4 and 8 h, respectively. After UV illumination for 4 and 8 h, the NiTPP thin films are characterized by blueshifted absorption coefficients, increasing the optical and fundamental gap values and decreasing the dispersion parameter values. The dielectric properties display energy storage regions corresponding to the peak values of optical conductivity, which provides an elegant confirmation of the tailoring and tuning of band gaps, energy storage properties and optical conductivity by UV illumination time. Therefore, NiTPP films may be good candidates for environmental and energy storage applications.