Spintronics and spintronics materials

Electronic and magnetic properties of GeS monolayer effected by point defects and doping

In this work, defect engineering and doping are proposed to effectively functionalize a germanium sulfide (GeS) mononolayer. With a buckled hexagonal structure, the good dynamical and thermal stability of the GeS monolayer is confirmed. PBE(HSE06)-based calculations assert the indirect gap semiconductor nature of this two-dimensional (2D) material with a relatively large band gap of 2.48(3.28) eV. The creation of a single Ge vacancy magnetizes the monolayer with a total magnetic moment of 1.99 μB, creating a the feature-rich half-metallic nature. VaS vacancy, VaGeS divacancy, SGe and GeS antisites preserve the non-magnetic nature; however, they induce considerable band gap reduction of the order 47.98%, 89.11%, 29.84%, and 62.5%, respectively. By doping with transition metals (TMs), large total magnetic moments of 3.00, 4.00, and 5.00 μB are obtained with V, Cr-Fe, and Mn impurities, respectively. The 3d orbital of TM dopants mainly regulates the electronic and magnetic properties, which induces either the half-metallic or diluted magnetic semiconductor nature. It is found that the doping site plays a determinant role in the case of doping with VA-group atoms (P and As). The GeS monolayer can be metallized by doping the Ge sublattice, meanwhile both spin states exhibit semiconductor character with strong spin polarization upon doping the S sublattice to obtain a diluted magnetic semiconductor nature with a total magnetic moment of 1.00 μB. In these cases, the magnetism originates mainly from P and As impurities. The obtained results suggest an efficient approach to functionalize the GeS monolayer for optoelectronic and spintronic applications.

Thorium and Rare Earth Monoxides and Related Phases

Thorium was a part of energy infrastructure in the 19th century due to the refractory and electronic properties of its dioxide. It will be a part of future energy infrastructure as the most abundant energy reserve based on nuclear fission. This paper discusses the solid-state chemistry of the monoxides and related rocksalt phases of thorium and the rare earths, both at atmospheric and at high pressure. The existence of solid thorium monoxide was first suggested more than 100 years ago; however, it was never obtained in bulk and has been studied mostly theoretically. Monoxides of lanthanides from Eu to Ho are ferromagnetic semiconductors sought for spintronics and were studied in thin films. La to Sm metallic monoxides were synthesized in bulk at pressures below 5 GPa. Recently, ThO formation in thin films has been reported and the stability of bulk ThO at high pressure was theoretically predicted based on first principles computations at 0 K. New ab initio computations were performed accounting for temperature effects up to 1000 K using lattice dynamics in the quasi-harmonic approximation. New computational results confirm the stabilization of pure ThO above 30 GPa and suggest the possibility of high-pressure synthesis of (Th,Nd)O at 1000 K and 5 GPa.

A versatile cantilever beam magnetometer for ex situ characterization of magnetic materials

We have designed, fabricated, and made operational an ex situ cantilever beam magnetometer (CBM), which is versatile in the sense that it can measure most of the magnetic properties of a material in all probable shapes. The working principle of a CBM is discussed considering the magnetic torque into the beam theory. The individual components of the instrument are described in details and experiments were performed on the bulk materials, pellets of nanoparticles, ribbon samples, and thin films, and the magnetization, magnetostriction, and magnetocrystalline anisotropy were studied. This magnetometer is inexpensive, but versatile and would be suitable for the research as well as teaching laboratories.

Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge)

Spintronic is a multidisciplinary field and a new research area. New materials must be found for satisfying the different types of demands. The search for stable half-metallic ferromagnets and ferromagnetic semiconductors with Curie temperatures higher than room temperature is still a challenge for solid state scientists. A general understanding of how structures are related to properties is a necessary prerequisite for material design. Computational simulations are an important tool for a rational design of new materials. The new developments in this new field are reported from the point of view of material scientists. The development of magnetic Heusler compounds specifically designed as material for spintronic applications has made tremendous progress in the very recent past. Heusler compounds can be made as half-metals, showing a high spin polarization of the conduction electrons of up to 100% in magnetic tunnel junctions. High Curie temperatures were found in Co2-based Heusler compounds with values up to 1120 K in Co2FeSi. The latest results at the time of writing are a tunnelling magnet resistance (TMR) device made from the Co2FeAl0.5Si0.5 Heusler compound and working at room temperature with a (TMR) effect higher than 200%. Good interfaces and a well-ordered compound are the precondition to realize the predicted half-metallic properties. The series Co2FeAl1- x Si x is found to exhibit half-metallic ferromagnetism over a broad range, and it is shown that electron doping stabilizes the gap in the minority states for x=0.5. This might be a reason for the exceptional temperature behaviour of Co2FeAl0.5Si0.5 TMR devices. Using x-ray diffraction (XRD), it was shown conclusively that Co2FeAl crystallizes in the B2 structure whereas Co2FeSi crystallizes in the L21 structure. For the compounds Co2FeGa or Co2FeGe, with Curie temperatures expected higher than 1000 K, the standard XRD technique using laboratory sources cannot be used to easily distinguish between the two structures. For this reason, the EXAFS technique was used to elucidate the structure of these two compounds. Analysis of the data indicated that both compounds crystallize in the L21 structure which makes these two compounds suitable new candidates as materials in magnetic tunnel junctions.

Magnetic and structural investigation of Mn(2+)-doped ZnSe semiconductor nanoparticles

X-ray magnetic circular dichroism (XMCD) experiments on diluted magnetic semiconductor nanocrystals were carried out to study the local electronic structure and magnetic properties of Mn(2+) embedded in the lattice of ZnSe nanoparticles. It is shown that Mn(2+) is exclusively present in the bulk of ZnSe nanoparticles. Neither Mn-Mn coupling nor traces of oxidation to higher Mn oxidation states was observed. This result, which is consistent with EPR spectroscopic data, provides clear proof of the location of Mn(2+) in semiconductor nanoparticles. Further, it is shown that the magnetic ions are highly polarised inside the nanocrystals, where they reach about 50 % of the theoretical value of a pure d(5) state under identical conditions.

Semiconductor spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry—giant magnetoresistance systems are used as hard disk read heads—semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.

Spintronics: A Challenge for Materials Science and Solid-State Chemistry

Spintronics is a multidisciplinary field involving physics, chemistry, and engineering, and is a new research area for solid-state scientists. A variety of new materials must be found to satisfy different demands. The search for ferromagnetic semiconductors and stable half-metallic ferromagnets with Curie temperatures higher than room temperature remains a priority for solid-state chemistry. A general understanding of structure-property relationships is a necessary prerequisite for the design of new materials. In this Review, the most important developments in the field of spintronics are described from the point of view of materials science.