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Lv Y, Li Y, Zhou Y, Liu J, Wang J, Lin Y, Hu J, Pan T, Li Y, Wang K, Xia Y, Shi W, Chen Y. Efficient and Stable β-CsPbI 3 Solar Cells through Solvent Engineering with Methylamine Acetate Ionic Liquid. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37290066 DOI: 10.1021/acsami.3c05396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
CsPbI3, an all-inorganic perovskite material with suitable band gap and excellent thermal stability, has garnered significant attention for its potential in perovskite solar cells (PSCs). However, CsPbI3 is susceptible to phase changes from photoactive to photoinactive in humid environments. Hence, it is crucial to achieve controllable growth of CsPbI3 perovskite thin films with the desired β-crystal phase and compact morphology for efficient and stable PSCs. Herein, MAAc was used as a solvent for the CsPbI3 precursor to fabricate β-CsPbI3 perovskite. An intermediate compound of CsxMA1-xPbIxAc3-x was initially formed in the MAAc solution, and during annealing, the MA+ and Ac- ions were replaced by Cs+ and I- ions, respectively. Furthermore, the incorporation of strong C═O···Pb coordination stabilized the black-phase β-CsPbI3 and facilitated the growth of crystals with a narrow vertical orientation and large grain size. As a result, the PSCs with an efficiency of 18.9% and improved stability (less than 10% decay after 2000 h of storage in N2 and less than 30% decay after 500 h of storage in humid air without any encapsulation) were achieved.
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Affiliation(s)
- Yifan Lv
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yiqun Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yan Zhou
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Jin Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Jinpei Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yuexin Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Jianfei Hu
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Tengfei Pan
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yajing Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Kaiyu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yingdong Xia
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Wei Shi
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
- Optics Valley Laboratory, Wuhan, Hubei 430074, China
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Wu W, Zhao C, Hu M, Pan A, Xiong W, Chen Y. CsPbBr 3 perovskite quantum dots grown within Fe-doped zeolite X with improved stability for sensitive NH 3 detection. NANOSCALE 2023; 15:5705-5711. [PMID: 36853801 DOI: 10.1039/d2nr06923g] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
All-inorganic cesium lead halide (CsPbX3, X = Cl, Br and I) perovskite quantum dots (QDs) have received enormous research interest because of their exceptional optoelectronic properties, but their low chemical stability under ambient conditions from inevitable defects restricts their practical applications. In an effort to enhance the stability of QDs, in this study, novel functional nanocomposites were fabricated by encapsulating perovskite QDs with zeolite X doped with iron ions. Focusing on the as-obtained nanocomposites labeled with QDs@Fe/X-n, doping a reasonable amount of Fe3+ ions can tremendously improve the order of perovskite lattices and reduce the halide vacancies. The results of stability improvement in nanocomposites with an optimal Fe3+ load (QDs@Fe/X-3) are presented. After storage in air for 100 days, the emission-peak position of the composites can remain almost unchanged, and the photoluminescence (PL) intensity can reach ∼98% of the original intensity. Additionally, the PL intensity of QDs@Fe/X-3 can decrease immediately when exposing it to a NH3 atmosphere at room temperature. The PL intensity can be linearly varied with a change in the NH3 concentration. The original value of the PL can be rapidly recovered by separating the sample from the NH3 environment. This work enables the QDs@Fe/X composite to be an ideal active material for ammonia sensing.
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Affiliation(s)
- Wan Wu
- Department of Chemistry, School of Chemistry, Xi'an Jiaotong University, Xianning West Road, 28, Xi'an 710049, China.
| | - Chunyu Zhao
- Department of Chemistry, School of Chemistry, Xi'an Jiaotong University, Xianning West Road, 28, Xi'an 710049, China.
| | - Mingyou Hu
- Department of Chemistry, School of Chemistry, Xi'an Jiaotong University, Xianning West Road, 28, Xi'an 710049, China.
| | - Aizhao Pan
- Department of Chemistry, School of Chemistry, Xi'an Jiaotong University, Xianning West Road, 28, Xi'an 710049, China.
| | - Wei Xiong
- Department of Chemistry, School of Chemistry, Xi'an Jiaotong University, Xianning West Road, 28, Xi'an 710049, China.
| | - Yinghao Chen
- Department of Chemistry, School of Chemistry, Xi'an Jiaotong University, Xianning West Road, 28, Xi'an 710049, China.
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Li XF, Cheng SQ, Zhou YQ, Ouyang WH, Li S, Liu BX, Liu JB. Insights Into to the KX (X = Cl, Br, I) Adsorption-Assisted Stabilization of CsPbI 2 Br Surface. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202623. [PMID: 35754173 DOI: 10.1002/smll.202202623] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Revised: 06/07/2022] [Indexed: 06/15/2023]
Abstract
Despite the excellent optoelectronic properties, organic-inorganic hybrid perovskite solar cells (PSCs) still present significant challenges in terms of ambient stability. CsPbI2 Br, a member of all-inorganic perovskites, may respond to this challenge because of its inherent high stability against light, moisture, and heat, and therefore has gained tremendous attraction recently. However, the practical application of CsPbI2 Br is still impeded by the notorious phenomenon of photoinduced halide segregation. Herein, by applying first-principles calculations, the stability, electronic structure, defect properties, and ion-diffusion properties of the stoichiometric CsPbI2 Br (110) surface and that with the adsorption of KX (X = Cl, Br, I) are systematically investigated. It is found that the adsorbed KX can serve as an external substitute of the halogen vacancies on the surface, therefore inhibiting halogen segregation and improving the stability of the CsPbI2 Br surface. The KX can also eliminate deep-level defect states caused by antisites, thereby contributing to the promoted optoelectronic properties of CsPbI2 Br. The mechanistic understanding of surface passivation in this work can lay the foundation for the future design of CsPbI2 Br PSCs with optimized optoelectronic performance.
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Affiliation(s)
- Xiao-Fen Li
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Song-Qi Cheng
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yu-Qian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Wen-Hong Ouyang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Shunning Li
- School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Bai-Xin Liu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jian-Bo Liu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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Liu X, Shao G, Zhang Y, Liang X, Li C, Xiang W. CsPbCl1.5Br1.5 perovskite nanocrystals glasses powder optimized by Zn2+ for photocatalytic hydrogen production. MOLECULAR CATALYSIS 2021. [DOI: 10.1016/j.mcat.2020.111305] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Qi W, Zhou X, Li J, Cheng J, Li Y, Ko MJ, Zhao Y, Zhang X. Inorganic material passivation of defects toward efficient perovskite solar cells. Sci Bull (Beijing) 2020; 65:2022-2032. [PMID: 36659061 DOI: 10.1016/j.scib.2020.07.017] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/04/2020] [Revised: 06/23/2020] [Accepted: 07/01/2020] [Indexed: 01/21/2023]
Abstract
Surface passivation with organic materials is one of the most effective and popular strategies to improve the stability and efficiency of perovskite solar cells (PSCs). However, the secondary bonding formed between organic molecules and perovskite layers is still not strong enough to protect the perovskite absorber from degradation initialized by oxygen and water attacking at defects. Recently, passivation with inorganic materials has gradually been favored by researchers due to the effectiveness of chemical and mechanical passivation. Lead-containing substances, alkali metal halides, transition elements, oxides, hydrophobic substances, etc. have already been applied to the surface and interfacial passivation of PSCs. These inorganic substances mainly manipulate the nucleation and crystallization process of perovskite absorbers by chemically passivating defects along grain boundaries and surface or forming a mechanically protective layer simultaneously to prevent the penetration of moisture and oxygen, thereby improving the stability and efficiency of the PSCs. Herein, we mainly summarize inorganic passivating materials and their individual passivation principles and methods. Finally, this review offers a personal perspective for future research trends in the development of passivation strategies through inorganic materials.
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Affiliation(s)
- Wenjing Qi
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Solar Energy Research Center, Nankai University, Tianjin 300350, China; Collaborative Innovation Center of Chemical Science and Engineering, Renewable Energy Conversion and Storage Center of Nankai University, Tianjin 300072, China
| | - Xin Zhou
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Solar Energy Research Center, Nankai University, Tianjin 300350, China; Collaborative Innovation Center of Chemical Science and Engineering, Renewable Energy Conversion and Storage Center of Nankai University, Tianjin 300072, China
| | - Jiale Li
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Solar Energy Research Center, Nankai University, Tianjin 300350, China; Collaborative Innovation Center of Chemical Science and Engineering, Renewable Energy Conversion and Storage Center of Nankai University, Tianjin 300072, China
| | - Jian Cheng
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Solar Energy Research Center, Nankai University, Tianjin 300350, China; Collaborative Innovation Center of Chemical Science and Engineering, Renewable Energy Conversion and Storage Center of Nankai University, Tianjin 300072, China
| | - Yuelong Li
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Solar Energy Research Center, Nankai University, Tianjin 300350, China; Collaborative Innovation Center of Chemical Science and Engineering, Renewable Energy Conversion and Storage Center of Nankai University, Tianjin 300072, China.
| | - Min Jae Ko
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Ying Zhao
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Solar Energy Research Center, Nankai University, Tianjin 300350, China; Collaborative Innovation Center of Chemical Science and Engineering, Renewable Energy Conversion and Storage Center of Nankai University, Tianjin 300072, China
| | - Xiaodan Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Solar Energy Research Center, Nankai University, Tianjin 300350, China; Collaborative Innovation Center of Chemical Science and Engineering, Renewable Energy Conversion and Storage Center of Nankai University, Tianjin 300072, China
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Sulfonyldibenzene-based hole-transporting materials for efficient n-i-p perovskite solar cells. Sci China Chem 2020. [DOI: 10.1007/s11426-020-9899-x] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
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Patil JV, Mali SS, Hong CK. Efficient and Stable All-Inorganic Niobium-Incorporated CsPbI 2Br-Based Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2020; 12:27176-27183. [PMID: 32484326 DOI: 10.1021/acsami.0c04577] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Inorganic cesium lead halide perovskite (CsPbX3) is a promising light-harvesting material to increase the thermal stability and the device performance as compared to the organic-inorganic hybrid counterparts. However, the photoactive stability at ambient conditions is an unresolved issue. Here, we studied the influence of Nb5+ ions' incorporation in the CsPbI2Br perovskite processed at ambient conditions. Our results exhibited that 0.5% Nb-incorporated CsPb1-xNbxI2Br (herein x = 0.005) thin films show excellent uniformity and improved grain size because of the optimum concentration of Nb5+ doping and hot-air flow. The improved grain size and uniform film thickness deliver a superior interface between the CsPb1-xNbxI2Br layer and the hole-transporting material. The fabricated all-inorganic perovskite solar cell (IPVSC) devices exhibited the Nb5+ cation incorporation which enables decreased charge recombination, leading to negligible hysteresis. The champion device produces an open-circuit voltage (VOC) as high as 1.317 V. The IPVSC device containing a CsPb0.995Nb0.005I2Br composition delivers the highest power conversion efficiency of 16.45% under a 100 mW cm-2 illumination and exhibits a negligible efficiency loss over 96 h in ambient conditions.
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Affiliation(s)
- Jyoti V Patil
- Optoelectronic Convergence Research Center, Chonnam National University, Gwangju 61186, Korea
- Polymer Energy Materials Laboratory, School of Advanced Chemical Engineering, Chonnam National University, Gwangju 61186, Korea
| | - Sawanta S Mali
- Polymer Energy Materials Laboratory, School of Advanced Chemical Engineering, Chonnam National University, Gwangju 61186, Korea
| | - Chang Kook Hong
- Optoelectronic Convergence Research Center, Chonnam National University, Gwangju 61186, Korea
- Polymer Energy Materials Laboratory, School of Advanced Chemical Engineering, Chonnam National University, Gwangju 61186, Korea
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Liu W, Liu N, Ji S, Hua H, Ma Y, Hu R, Zhang J, Chu L, Li X, Huang W. Perfection of Perovskite Grain Boundary Passivation by Rhodium Incorporation for Efficient and Stable Solar Cells. NANO-MICRO LETTERS 2020; 12:119. [PMID: 34138140 PMCID: PMC7770677 DOI: 10.1007/s40820-020-00457-7] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2020] [Accepted: 05/06/2020] [Indexed: 05/22/2023]
Abstract
Organic cation and halide anion defects are omnipresent in the perovskite films, which will destroy perovskite electronic structure and downgrade the properties of devices. Defect passivation in halide perovskites is crucial to the application of solar cells. Herein, tiny amounts of trivalent rhodium ion incorporation can help the nucleation of perovskite grain and passivate the defects in the grain boundaries, which can improve efficiency and stability of perovskite solar cells. Through first-principle calculations, rhodium ion incorporation into the perovskite structure can induce ordered arrangement and tune bandgap. In experiment, rhodium ion incorporation with perovskite can contribute to preparing larger crystalline and uniform film, reducing trap-state density and enlarging charge carrier lifetime. After optimizing the content of 1% rhodium, the devices achieved an efficiency up to 20.71% without obvious hysteresis, from 19.09% of that pristine perovskite. In addition, the unencapsulated solar cells maintain 92% of its initial efficiency after 500 h in dry air. This work highlights the advantages of trivalent rhodium ion incorporation in the characteristics of perovskite solar cells, which will promote the future industrial application.
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Affiliation(s)
- Wei Liu
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China
| | - Nanjing Liu
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China
| | - Shilei Ji
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China
| | - Hongfeng Hua
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China
| | - Yuhui Ma
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China
| | - Ruiyuan Hu
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China
| | - Jian Zhang
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China
| | - Liang Chu
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China.
- Guangdong Provincial Key Lab of Nano-Micro Materials Research, School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Shenzhen, 518055, People's Republic of China.
| | - Xing'ao Li
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China.
| | - Wei Huang
- Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, People's Republic of China.
- Shaanxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China.
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Wei Q, Ye Z, Ren X, Fu F, Yang Z, Liu S, Yang D. Highly stable and efficient perovskite solar cells produced via high-boiling point solvents and additive engineering synergistically. Sci China Chem 2020. [DOI: 10.1007/s11426-019-9727-8] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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Huang L, Zhang D, Bu S, Peng R, Wei Q, Ge Z. Synergistic Interface Energy Band Alignment Optimization and Defect Passivation toward Efficient and Simple-Structured Perovskite Solar Cell. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902656. [PMID: 32195090 DOI: 10.1002/aenm.201902650] [Citation(s) in RCA: 158] [Impact Index Per Article: 39.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2019] [Revised: 12/12/2019] [Indexed: 05/28/2023]
Abstract
Efficient electron transport layer-free perovskite solar cells (ETL-free PSCs) with cost-effective and simplified design can greatly promote the large area flexible application of PSCs. However, the absence of ETL usually leads to the mismatched indium tin oxide (ITO)/perovskite interface energy levels, which limits charge transfer and collection, and results in severe energy loss and poor device performance. To address this, a polar nonconjugated small-molecule modifier is introduced to lower the work function of ITO and optimize interface energy level alignment by virtue of an inherent dipole, as verified by photoemission spectroscopy and Kelvin probe force microscopy measurements. The resultant barrier-free ITO/perovskite contact favors efficient charge transfer and suppresses nonradiative recombination, endowing the device with enhanced open circuit voltage, short circuit current density, and fill factor, simultaneously. Accordingly, power conversion efficiency increases greatly from 12.81% to a record breaking 20.55%, comparable to state-of-the-art PSCs with a sophisticated ETL. Also, the stability is enhanced with decreased hysteresis effect due to interface defect passivation and inhibited interface charge accumulation. This work facilitates the further development of highly efficient, flexible, and recyclable ETL-free PSCs with simplified design and low cost by interface electronic structure engineering through facile electrode modification.
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Affiliation(s)
- Like Huang
- Ningbo Institute of Materials Technology and Engineering (NIMTE) Chinese Academy of Sciences (CAS) Ningbo 315201 China
| | - Danli Zhang
- Ningbo Institute of Materials Technology and Engineering (NIMTE) Chinese Academy of Sciences (CAS) Ningbo 315201 China
| | - Shixiao Bu
- Ningbo Institute of Materials Technology and Engineering (NIMTE) Chinese Academy of Sciences (CAS) Ningbo 315201 China
| | - Ruixiang Peng
- Ningbo Institute of Materials Technology and Engineering (NIMTE) Chinese Academy of Sciences (CAS) Ningbo 315201 China
| | - Qiang Wei
- Ningbo Institute of Materials Technology and Engineering (NIMTE) Chinese Academy of Sciences (CAS) Ningbo 315201 China
| | - Ziyi Ge
- Ningbo Institute of Materials Technology and Engineering (NIMTE) Chinese Academy of Sciences (CAS) Ningbo 315201 China
- Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China
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