1
|
Yang L, Jiang C, Guo S, Zhang L, Gao J, Peng J, Hu T, Wang L. Novel Diamond Films Synthesis Strategy: Methanol and Argon Atmosphere by Microwave Plasma CVD Method Without Hydrogen. NANOSCALE RESEARCH LETTERS 2016; 11:415. [PMID: 27644241 PMCID: PMC5028358 DOI: 10.1186/s11671-016-1628-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/28/2016] [Accepted: 09/10/2016] [Indexed: 06/06/2023]
Abstract
Diamond thin films are grown on silicon substrates by only using methanol and argon mixtures in microwave plasma chemical vapor deposition (MPCVD) reactor. It is worth mentioning that the novel strategy makes the synthesis reaction works smoothly without hydrogen atmosphere, and the substrates temperature is only 500 °C. The evidence of surface morphology and thickness under different time is obtained by characterizing the samples using scanning electron microscopy (SEM). X-ray diffractometer (XRD) spectrum reveals that the preferential orientation of (111) plane sample is obtained. The Raman spectra indicate that the dominant component of all the samples is a diamond. Moreover, the diamond phase content of the targeted films was quantitatively analyzed by X-ray photoelectron spectroscopy (XPS) method, and the surface roughness of diamond films was investigated by atomic force microscope (AFM). Meanwhile, the possible synthesis mechanism of the diamond films in methanol- and argon-mixed atmosphere was discussed.
Collapse
Affiliation(s)
- Li Yang
- State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming University of Science and Technology, Kunming, 650093 China
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, 650093 China
- National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 China
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 China
| | - Caiyi Jiang
- State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming University of Science and Technology, Kunming, 650093 China
- National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 China
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 China
| | - Shenghui Guo
- State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming University of Science and Technology, Kunming, 650093 China
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, 650093 China
- National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 China
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 China
| | - Libo Zhang
- State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming University of Science and Technology, Kunming, 650093 China
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, 650093 China
- National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 China
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 China
| | - Jiyun Gao
- School of Chemistry and Environment, Yunnan Minzu University, Kunming, 650500 China
| | - Jinhui Peng
- State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming University of Science and Technology, Kunming, 650093 China
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, 650093 China
- National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 China
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 China
| | - Tu Hu
- State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming University of Science and Technology, Kunming, 650093 China
- National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 China
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 China
| | - Liang Wang
- State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming University of Science and Technology, Kunming, 650093 China
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, 650093 China
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 China
| |
Collapse
|
2
|
Wei W, Qin Z, Fan S, Li Z, Shi K, Zhu Q, Zhang G. Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy. NANOSCALE RESEARCH LETTERS 2012; 7:562. [PMID: 23046910 PMCID: PMC3526396 DOI: 10.1186/1556-276x-7-562] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2012] [Accepted: 09/24/2012] [Indexed: 05/23/2023]
Abstract
A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.
Collapse
Affiliation(s)
- Wei Wei
- State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China
| | - Zhixin Qin
- State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China
| | - Shunfei Fan
- State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China
| | - Zhiwei Li
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China
| | - Kai Shi
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China
| | - Qinsheng Zhu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China
| | - Guoyi Zhang
- State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China
| |
Collapse
|