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Gao H, Wang Z, Cao J, Lin YC, Ling X. Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials. ACS NANO 2024; 18:16343-16358. [PMID: 38899467 DOI: 10.1021/acsnano.4c01177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Extending the inventory of two-dimensional (2D) materials remains highly desirable, given their excellent properties and wide applications. Current studies on 2D materials mainly focus on the van der Waals (vdW) materials since the discovery of graphene, where properties of atomically thin layers have been found to be distinct from their bulk counterparts. Beyond vdW materials, there are abundant non-vdW materials that can also be thinned down to 2D forms, which are still in their early stage of exploration. In this review, we focus on the downscaling of non-vdW materials into 2D forms to enrich the 2D materials family. This underexplored group of 2D materials could show potential promise in many areas such as electronics, optics, and magnetics, as has happened in the vdW 2D materials. Hereby, we will focus our discussion on their electronic properties and applications of them. We aim to motivate and inspire fellow researchers in the 2D materials community to contribute to the development of 2D materials beyond the widely studied vdW layered materials for electronic device applications. We also give our insights into the challenges and opportunities to guide researchers who are desirous of working in this promising research area.
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Affiliation(s)
- Hongze Gao
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Zifan Wang
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Jun Cao
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Yuxuan Cosmi Lin
- Department of Materials Science and Engineering, Texas A&M University 575 Ross Street, College Station, Texas 77843, United States
| | - Xi Ling
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
- Division of Materials Science and Engineering, Boston University 15 St Mary's Street, Boston, Massachusetts 02215, United States
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2
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Wang X, Tong L, Fan W, Yan W, Su C, Wang D, Wang Q, Yan H, Yin S. Air-stable self-powered photodetector based on TaSe 2/WS 2/TaSe 2 asymmetric heterojunction with surface self-passivation. J Colloid Interface Sci 2024; 657:529-537. [PMID: 38070338 DOI: 10.1016/j.jcis.2023.11.172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/09/2023] [Accepted: 11/27/2023] [Indexed: 01/02/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides are highly suitable for constructing junction photodetectors because of their suspended bond-free surface and adjustable bandgap. Additional stable layers are often used to ensure the stability of photodetectors. Unfortunately, they often increase the complexity of preparation and cause performance degradation of devices. Considering the self-passivation behavior of TaSe2, we designed and fabricated a novel self-powered TaSe2/WS2/TaSe2 asymmetric heterojunction photodetector. The heterojunction photodetector shows excellent photoelectric performance and photovoltaic characteristics, achieving a high responsivity of 292 mA/W, an excellent specific detectivity of 2.43 × 1011 Jones, a considerable external quantum efficiency of 57 %, a large optical switching ratio of 2.6 × 105, a fast rise/decay time of 43/54 μs, a high open-circuit voltage of 0.23 V, and a short-circuit current of 2.28 nA under 633 nm laser irradiation at zero bias. Moreover, the device also shows a favorable optical response to 488 and 532 nm lasers. Notably, it exhibits excellent environmental long-term stability with the performance only decreasing ∼ 5.6 % after exposed to air for 3 months. This study provides a strategy for the development of air-stable self-powered photodetectors based on 2D materials.
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Affiliation(s)
- Xinyu Wang
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Lei Tong
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Wenhao Fan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Wei Yan
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Can Su
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Deji Wang
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Qingguo Wang
- GuoAng Zhuotai (Tianjin) Smart IOT Technology Co., Ltd, Tianjin 301700, China
| | - Hui Yan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Shougen Yin
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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3
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Photoelectrochemical Conversion of Sewage Water into H2 Fuel over the CuFeO2/CuO/Cu Composite Electrode. Catalysts 2023. [DOI: 10.3390/catal13030456] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/24/2023] Open
Abstract
This study describes the synthesis of delafossite, CuFeO2, as a primary photocatalytic material for hydrogen generation. A photoelectrode, CuFeO2/CuO/Cu, was prepared by combusting a Cu foil dipped in FeCl3 in ambient air. This photoelectrode showed excellent optical behavior for the hydrogen generation reaction from sewage water, producing 90 µmol/h of H2. The chemical structure was confirmed through XRD and XPS analyses, and the crystalline rhombohedral shape of CuFeO2 was confirmed using SEM and TEM analyses. With a bandgap of 1.35 ev, the prepared material displayed excellent optical properties. Electrochemical measurements for H2 gas generation were carried out using the CuFeO2/CuO/Cu photoelectrode, comparing the effect of light and dark and monochromatic wavelength light. The electrode exhibited significant enhancement in light compared to dark, with current density (Jph) values of −0.83 and −0.1 mA·cm−2, respectively. The monochromatic light also had a noticeable effect, with the Jph value increasing from −0.45 to −0.79 mA·cm−2 as the wavelength increased from 640 to 390 nm. This system is cheap and durable, making it a promising solution for hydrogen gas fuel generation in the industry.
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Ding EX, Liu P, Yoon HH, Ahmed F, Du M, Shafi AM, Mehmood N, Kauppinen EI, Sun Z, Lipsanen H. Highly Sensitive MoS 2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4216-4225. [PMID: 36635093 PMCID: PMC9880956 DOI: 10.1021/acsami.2c19917] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2022] [Accepted: 01/05/2023] [Indexed: 06/17/2023]
Abstract
Fabricating electronic and optoelectronic devices by transferring pre-deposited metal electrodes has attracted considerable attention, owing to the improved device performance. However, the pre-deposited metal electrode typically involves complex fabrication procedures. Here, we introduce our facile electrode fabrication process which is free of lithography, lift-off, and reactive ion etching by directly press-transferring a single-walled carbon nanotube (SWCNT) film. We fabricated Schottky diodes for photodetector applications using dry-transferred SWCNT films as the transparent electrode to increase light absorption in photoactive MoS2 channels. The MoS2 flake vertically stacked with an SWCNT electrode can exhibit excellent photodetection performance with a responsivity of ∼2.01 × 103 A/W and a detectivity of ∼3.2 × 1012 Jones. Additionally, we carried out temperature-dependent current-voltage measurement and Fowler-Nordheim (FN) plot analysis to explore the dominant charge transport mechanism. The enhanced photodetection in the vertical configuration is found to be attributed to the FN tunneling and internal photoemission of charge carriers excited from indium tin oxide across the MoS2 layer. Our study provides a novel concept of using a photoactive MoS2 layer as a tunneling layer itself with a dry-transferred transparent SWCNT electrode for high-performance and energy-efficient optoelectronic devices.
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Affiliation(s)
- Er-Xiong Ding
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Peng Liu
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Hoon Hahn Yoon
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Faisal Ahmed
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Mingde Du
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Abde Mayeen Shafi
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Naveed Mehmood
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Esko I. Kauppinen
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
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Fu X, Li T, Li Q, Hao C, Zhang L, Fu D, Wang J, Xu H, Gu Y, Zhong F, He T, Zhang K, Panin GN, Lu W, Miao J, Hu W. Geometry-asymmetric photodetectors from metal-semiconductor-metal van der Waals heterostructures. MATERIALS HORIZONS 2022; 9:3095-3101. [PMID: 36268699 DOI: 10.1039/d2mh00872f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The functional diversities of two-dimensional (2D) material devices with simple architectures are ultimately limited by immature doping techniques. An alternative strategy is to use geometry-asymmetric metal-semiconductor-metal (GA-MSM) structures, which enable the basic functions of semiconductor junctions such as rectification and photovoltaics. Here, the mixed-dimensional van der Waals heterostructures (MDvdWHs) based on the separation and self-assembly of p-type SnS layered nanosheets (NSs) and n-type SnS2 nanoparticles (NPs) are obtained using an aqueous phase exfoliation (APE) method. Due to the surface charge transfer doping, the carrier transport mechanism of devices based on MDvdWHs turns from thermionic field emission (TFE) to thermionic emission (TE), with the rectification factor (Iforward/Ireverse) changing from 0.7 to 3. To further illustrate the experimental results, the generic current transport models of GA-MSM devices have been established based on the TE and TFE mechanisms in which the TE and TFE mechanisms lead to opposite rectification phenomena in good agreement with the experimental results. The GA-MSM devices show a photovoltaic effect with a high responsivity of 35 A W-1 and detectivity of 3.4 × 1011 cm Hz1/2 W-1. This study not only provides a novel strategy to design photovoltaic devices with MDvdWHs, but more importantly, we have established fundamental models for the rectification behavior of GA-MSM devices.
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Affiliation(s)
- Xiao Fu
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tangxin Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qing Li
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chunhui Hao
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Zhang
- Ministry of Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China
| | - Dejun Fu
- Innovation Center of Research Institute of Tsinghua University in Zhuhai, Zhuhai 519000, China
| | - Jinjin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hangyu Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yue Gu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fang Zhong
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ting He
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kun Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Gennady N Panin
- Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow 142432, Russia
| | - Wei Lu
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinshui Miao
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Weida Hu
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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ATO/Polyaniline/PbS Nanocomposite as Highly Efficient Photoelectrode for Hydrogen Production from Wastewater with Theoretical Study for the Water Splitting. ADSORPT SCI TECHNOL 2022. [DOI: 10.1155/2022/5628032] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
Abstract
Polyaniline-assisted deposition of PbS is carried out on antimony tin oxide (ATO) glass for ATO/PANI/PbS composite formation. The deposition of PbS was carried out inside and outside the polymer chains using the ionic adsorption deposition process. Various analyses were conducted to confirm the chemical structure and morphological, optical, and electrical properties of the resulting composite. TEM and SEM analyses demonstrated the spherical shape of PbS particles inside and outside the PANI network with more dark or white color, respectively. Moreover, the ImageJ program confirmed the composite formation. The XRD characterization showed the shifts in the PANI peaks after the composite formation with the appearance of a new additional peak related to PbS nanoparticles. The optical analyses were massively enhanced after the composite formation with more broadening in the Vis region at 630 nm, in which there was more enhancement in the bandgap that reached 1.5 eV. The electrode application in the H2 generation process was carried out from wastewater (sewage water, third treatment) without any additional sacrificing agent. The electrode responded well to light, where the current density (
) changed from 10-6 to 0.13 mA.cm-2 under dark and light, respectively. The electrode had high reproducibility and stability. The numbers of generated H2 moles were 0.1 mmol/cm2.h. The produced
and
were 7.3 kJ/mol and 273.4 J/mol.K, respectively. Finally, the mechanism explains the H2 generation reaction using three-electrode cell.
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Performance Enhancement of SPR Biosensor Using Graphene–MoS2 Hybrid Structure. NANOMATERIALS 2022; 12:nano12132219. [PMID: 35808053 PMCID: PMC9268646 DOI: 10.3390/nano12132219] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/05/2022] [Revised: 06/26/2022] [Accepted: 06/26/2022] [Indexed: 02/04/2023]
Abstract
We investigate a high-sensitivity surface plasmon resonance (SPR) biosensor consisting of a Au layer, four-layer MoS2, and monolayer graphene. The numerical simulations, by the transfer matrix method (TMM), demonstrate the sensor has a maximum sensitivity of 282°/RIU, which is approximately 2 times greater than the conventional Au-based SPR sensor. The finite difference time domain (FDTD) indicates that the presence of MoS2 film generates a strong surface electric field and enhances the sensitivity of the proposed SPR sensor. In addition, the influence of the number of MoS2 layers on the sensitivity of the proposed sensor is investigated by simulations and experiments. In the experiment, MoS2 and graphene films are transferred on the Au-based substrate by the PMMA-based wet transfer method, and the fabricated samples are characterized by Raman spectroscopy. Furthermore, the fabricated sensors with the Kretschmann configuration are used to detect okadaic acid (OA). The okadaic acid–bovine serum albumin bioconjugate (OA-BSA) is immobilized on the graphene layer of the sensors to develop a competitive inhibition immunoassay. The results show that the sensor has a very low limit of detection (LOD) of 1.18 ng/mL for OA, which is about 22.6 times lower than that of a conventional Au biosensor. We believe that such a high-sensitivity SPR biosensor has potential applications for clinical diagnosis and immunoassays.
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Bunch of Grape-Like Shape PANI/Ag2O/Ag Nanocomposite Photocatalyst for Hydrogen Generation from Wastewater. ADSORPT SCI TECHNOL 2022. [DOI: 10.1155/2022/4282485] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Polyaniline (PANI) and PANI/Ag2O/Ag composites I and II were prepared under different AgNO3 oxidant concentrations using the oxidative photopolymerization method. The chemical structure and optical, electrical, and morphological properties were determined for the prepared nanocomposite. The PANI/Ag2O/Ag composite II has the optimum optical properties, in which the bandgaps of PANI, composite I, and composite II are 3.02, 1.71, and 1.68 eV, respectively, with the morphology of a bunch of grape-like shapes with average particles sizes of 25 nm. Under the optimum optical properties, glass/PANI/Ag2O/Ag composite II electrode is used for hydrogen generation from sewage water. The measurements are carried out from a three-electrode cell under a xenon lamp. The effects of light wavelengths and temperature on the produced current density (
) are mentioned. Under the applied voltage (at 30°C), the current density values (
) increase from 0.003 to 0.012 mA.cm-2 in dark and light, respectively. While increasing the temperature,
values increase to 0.032 mAcm-2 at 60°C. The thermodynamic parameters are calculated, in which the activation energy (
), enthalpy (
), and entropy (
) values are 27.1 kJ·mol-1, 24.5 J mol-1, and 140.5 J K-1 mol-1, respectively. Finally, a simple mechanism for the produced hydrogen generation rate is mentioned. The prepared electrode is a very cheap (1$ for
) electrode.
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Conversion of Sewage Water into H 2 Gas Fuel Using Hexagonal Nanosheets of the Polyaniline-Assisted Deposition of PbI 2 as a Nanocomposite Photocathode with the Theoretical Qualitative Ab-Initio Calculation of the H 2O Splitting. Polymers (Basel) 2022; 14:polym14112148. [PMID: 35683821 PMCID: PMC9183036 DOI: 10.3390/polym14112148] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Revised: 05/04/2022] [Accepted: 05/12/2022] [Indexed: 02/04/2023] Open
Abstract
This study is very promising for providing a renewable enrgy (H2 gas fuel) under the elctrochemical splitting of the wastwater (sewage water). This study has double benefits: hydrogen generation and contaminations removel. This study is carried out on sewage water, third stage treated, from Beni-Suef city, Egypt. Antimony tin oxide (ATO)/polyaniline (PANI)/PbI2 photoelectrode is prepared through the in situ oxidative polymerization of PANI on ATO, then PANI is used as an assistant for PbI2 deposition using the ionic adsorption deposition method. The chemical structural, morphological, electrical, and optical properties of the composite are confirmed using different analytical tools such as X-ray diffreaction (XRD), scanning electron microscope (SEM), transmision electron microscope (TEM), Fourier-transform infrared spectroscopy (FTIR), and UV-Vis spectroscopy. The prepared PbI2 inside the composite has a crystal size of 33 nm (according to the peak at 12.8°) through the XRD analyses device. SEM and TEM confirm the hexagonal PbI2 sheets embedded on the PANI nanopores surface. Moreover, the bandgap values are enhanced very much after the composite formation, in which the bandgap values for PANI and PANI/PbI2 are 3 and 2.51 eV, respectively. The application of ATO/PANI/PbI2 nanocomposite electrode for sewage splitting and H2 generation is carried out through a three-electrode cell. The measurements carreid out using the electrocehical worksattion under th Xenon lamp (100 mW.cm−2). The produced current density (Jph) is 0.095 mA.cm−2 at 100 mW.cm−2 light illumination. The photoelectrode has high reproducibility and stability, in which and the number of H2 moles is 6 µmole.h−1.cm−1. The photoelectrode response to different monochromatic light, in which the produced Jph decreases from 0.077 to 0.072 mA.cm−2 with decreasing of the wavelengths from 390 to 636 nm, respectively. These values confirms the high response of the ATO/PANI/PbI2 nanocomposite electrode for the light illuminaton and hydrogen genration under broad light region. The thermodynamic parameters: activation energy (Ea), enthalpy (ΔH*), and entropy (ΔS*) values are 7.33 kJ/mol, −4.7 kJ/mol, and 203.3 J/mol.K, respectively. The small values of ΔS* relted to the high sesnivity of the prepared elctrode for the water splitting and then the hydrogen gneration. Finally, a theoretical study was mentioned for calculation geometry, electrochemical, and thermochemistry properties of the polyaniline/PbI2 nanocomposite as compared with that for the polyaniline.
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Converting Sewage Water into H 2 Fuel Gas Using Cu/CuO Nanoporous Photocatalytic Electrodes. MATERIALS 2022; 15:ma15041489. [PMID: 35208029 PMCID: PMC8879772 DOI: 10.3390/ma15041489] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2022] [Revised: 02/05/2022] [Accepted: 02/10/2022] [Indexed: 11/17/2022]
Abstract
This work reports on H2 fuel generation from sewage water using Cu/CuO nanoporous (NP) electrodes. This is a novel concept for converting contaminated water into H2 fuel. The preparation of Cu/CuO NP was achieved using a simple thermal combustion process of Cu metallic foil at 550 °C for 1 h. The Cu/CuO surface consists of island-like structures, with an inter-distance of 100 nm. Each island has a highly porous surface with a pore diameter of about 250 nm. X-ray diffraction (XRD) confirmed the formation of monoclinic Cu/CuO NP material with a crystallite size of 89 nm. The prepared Cu/CuO photoelectrode was applied for H2 generation from sewage water achieving an incident to photon conversion efficiency (IPCE) of 14.6%. Further, the effects of light intensity and wavelength on the photoelectrode performance were assessed. The current density (Jph) value increased from 2.17 to 4.7 mA·cm-2 upon raising the light power density from 50 to 100 mW·cm-2. Moreover, the enthalpy (ΔH*) and entropy (ΔS*) values of Cu/CuO electrode were determined as 9.519 KJ mol-1 and 180.4 JK-1·mol-1, respectively. The results obtained in the present study are very promising for solving the problem of energy in far regions by converting sewage water to H2 fuel.
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11
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Lai K, Yuan K, Ye Q, Chen A, Chen D, Chen D, Gu C. Constructing the Mo2C@MoOx Heterostructure for Improved SERS Application. BIOSENSORS 2022; 12:bios12020050. [PMID: 35200312 PMCID: PMC8869368 DOI: 10.3390/bios12020050] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 01/14/2022] [Accepted: 01/18/2022] [Indexed: 12/28/2022]
Abstract
Surface-enhanced Raman scattering (SERS) is a non-destructive spectra analysis technique. It has the virtues of high detectivity and sensitivity, and has been extensively studied for low-trace molecule detection. Presently, a non-noble-metal-based SERS substrate with excellent enhancement capabilities and environmental stability is available for performing advanced biomolecule detection. Herein, a type of molybdenum carbide/molybdenum oxide (Mo2C@MoOx) heterostructure is constructed, and attractive SERS performance is achieved through the promotion of the charge transfer. Experimentally, Mo2C was first prepared by calcinating the ammonium molybdate tetrahydrate and gelatin mixture in an argon atmosphere. Then, the obtained Mo2C was further annealed in the air to obtain the Mo2C@MoOx heterostructure. The SERS performance was evaluated by using a 532 nm laser as an excitation source and a rhodamine 6G (R6G) molecule as the Raman reporter. This process demonstrates that attractive SERS performance with a Raman enhancement factor (EF) of 1.445 × 108 (R6G@10−8 M) and a limit of detection of 10−8 M can be achieved. Furthermore, the mechanism of SERS performance improvement with the Mo2C@MoOx is also investigated. HRTEM detection and XPS spectra reveal that part of the Mo2C is oxidized into MoOx during the air-annealing process, and generates metal–semiconductor mixing energy bands in the heterojunction. Under the Raman laser irradiation, considerable hole–electron pairs are generated in the heterojunction, and then the hot electrons move towards MoOx and subsequently transfer to the molecules, which ultimately boosts the Raman signal intensity.
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Affiliation(s)
- Kui Lai
- The Research Institute of Advanced Technologies, Ningbo University, No. 818 Fenghua Road, Ningbo 315211, China; (K.L.); (C.G.)
- School of Physical Science and Technology, Ningbo University, No. 818 Fenghua Road, Ningbo 315211, China; (K.Y.); (Q.Y.); (D.C.)
| | - Kaibo Yuan
- School of Physical Science and Technology, Ningbo University, No. 818 Fenghua Road, Ningbo 315211, China; (K.Y.); (Q.Y.); (D.C.)
| | - Qinli Ye
- School of Physical Science and Technology, Ningbo University, No. 818 Fenghua Road, Ningbo 315211, China; (K.Y.); (Q.Y.); (D.C.)
| | - Anqi Chen
- The Research Institute of Advanced Technologies, Ningbo University, No. 818 Fenghua Road, Ningbo 315211, China; (K.L.); (C.G.)
- Correspondence: (A.C.); (D.C.)
| | - Dong Chen
- School of Physical Science and Technology, Ningbo University, No. 818 Fenghua Road, Ningbo 315211, China; (K.Y.); (Q.Y.); (D.C.)
- Correspondence: (A.C.); (D.C.)
| | - Da Chen
- School of Physical Science and Technology, Ningbo University, No. 818 Fenghua Road, Ningbo 315211, China; (K.Y.); (Q.Y.); (D.C.)
| | - Chenjie Gu
- The Research Institute of Advanced Technologies, Ningbo University, No. 818 Fenghua Road, Ningbo 315211, China; (K.L.); (C.G.)
- School of Physical Science and Technology, Ningbo University, No. 818 Fenghua Road, Ningbo 315211, China; (K.Y.); (Q.Y.); (D.C.)
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12
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Almohammedi A, Shaban M, Mostafa H, Rabia M. Nanoporous TiN/TiO 2/Alumina Membrane for Photoelectrochemical Hydrogen Production from Sewage Water. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2617. [PMID: 34685061 PMCID: PMC8540468 DOI: 10.3390/nano11102617] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 09/09/2021] [Accepted: 09/14/2021] [Indexed: 11/25/2022]
Abstract
An aluminum oxide, Al2O3, template is prepared using a novel Ni imprinting method with high hexagonal pore accuracy and order. The pore diameter after the widening process is about 320 nm. TiO2 layer is deposited inside the template using atomic layer deposition (ALD) followed by the deposition of 6 nm TiN thin film over the TiO2 using a direct current (DC) sputtering unit. The prepared nanotubular TiN/TiO2/Al2O3 was fully characterized using different analytical tools such as X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), and optical UV-Vis spectroscopy. Exploring the current-voltage relationships under different light intensities, wavelengths, and temperatures was used to investigate the electrode's application before and after Au coating for H2 production from sewage water splitting without the use of any sacrificing agents. All thermodynamic parameters were determined, as well as quantum efficiency (QE) and incident photon to current conversion efficiency (IPCE). The QE was 0.25% and 0.34% at 400 mW·cm-2 for the photoelectrode before and after Au coating, respectively. Also, the activation energy was 27.22 and 18.84 kJ·mol-1, the enthalpy was 24.26 and 15.77 J·mol-1, and the entropy was 238.1 and 211.5 kJ-1·mol-1 before and after Au coating, respectively. Because of its high stability and low cost, the prepared photoelectrode may be suitable for industrial applications.
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Affiliation(s)
- Abdullah Almohammedi
- Department of Physics, Faculty of Science, Islamic University in Madinah, Al-Madinah Al-Munawarah 42351, Saudi Arabia;
| | - Mohamed Shaban
- Department of Physics, Faculty of Science, Islamic University in Madinah, Al-Madinah Al-Munawarah 42351, Saudi Arabia;
| | - Huda Mostafa
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt; (H.M.); (M.R.)
| | - Mohamed Rabia
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt; (H.M.); (M.R.)
- Polymer Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni-Suef 62511, Egypt
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13
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Yang L, Chen W, Huang J, Tang X, Yang R, Zhang H, Tang Z, Gui X. Resistance Switching and Failure Behavior of the MoO x/Mo 2C Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2021; 13:41857-41865. [PMID: 34432418 DOI: 10.1021/acsami.1c06663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
With the rapid demand for high-performance and power-efficient memristive and synaptic systems, more 2D heterostructures with improved resistance switching (RS) properties are still urgently in need for next-generation devices. Here, we report the RS behaviors of vertical MoOx/Mo2C heterostructures fabricated by controllable thermal oxidation and uncover the failure behavior for the first time. It is found that the MoOx/Mo2C heterostructure exhibits bipolar RS with a low set/reset voltage of +0.5/-0.3 V, an ultralow power consumption of 5 × 10-8 W, and an on/off ratio of 102, which is ascribed to the transport of the internal oxygen ions of MoOx. Furthermore, the failure behavior of RS behaviors of the MoOx/Mo2C heterostructure under a higher work voltage is revealed. It indicates that the amorphization of the pristine crystalline MoOx layer could block the movement of the internal oxygen ions in the vertical direction. The excellent RS performance induced by the synergy of MoOx and Mo2C and the demonstration of the failure behavior enable the potential applications of the 2D heterostructure in related memory devices and biological neural networks.
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Affiliation(s)
- Leilei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Wenjun Chen
- School of Electronic and Information Engineering, Foshan University, Foshan 528000, China
| | - Junhua Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Xin Tang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Rongliang Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Hao Zhang
- Instrumental Analysis and Research Center (IARC), Sun Yat-sen University, Guangzhou 510275, China
| | - Zikang Tang
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau 999078, China
| | - Xuchun Gui
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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14
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Elsayed AM, Rabia M, Shaban M, Aly AH, Ahmed AM. Preparation of hexagonal nanoporous Al 2O 3/TiO 2/TiN as a novel photodetector with high efficiency. Sci Rep 2021; 11:17572. [PMID: 34475431 PMCID: PMC8413375 DOI: 10.1038/s41598-021-96200-2] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2021] [Accepted: 07/27/2021] [Indexed: 02/07/2023] Open
Abstract
The unique optical properties of metal nitrides enhance many photoelectrical applications. In this work, a novel photodetector based on TiO2/TiN nanotubes was deposited on a porous aluminum oxide template (PAOT) for light power intensity and wavelength detection. The PAOT was fabricated by the Ni-imprinting technique through a two-step anodization method. The TiO2/TiN layers were deposited by using atomic layer deposition and magnetron sputtering, respectively. The PAOT and PAOT/TiO2/TiN were characterized by several techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive X-ray (EDX). The PAOT has high-ordered hexagonal nanopores with dimensions ~ 320 nm pore diameter and ~ 61 nm interpore distance. The bandgap of PAOT/TiO2 decreased from 3.1 to 2.2 eV with enhancing absorption of visible light after deposition of TiN on the PAOT/TiO2. The PAOT/TiO2/TiN as photodetector has a responsivity (R) and detectivity (D) of 450 mAW-1 and 8.0 × 1012 Jones, respectively. Moreover, the external quantum efficiency (EQE) was 9.64% at 62.5 mW.cm-2 and 400 nm. Hence, the fabricated photodetector (PD) has a very high photoelectrical response due to hot electrons from the TiN layer, which makes it very hopeful as a broadband photodetector.
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Affiliation(s)
- Asmaa M Elsayed
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
| | - Mohamed Rabia
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- Polymer Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
| | - Mohamed Shaban
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- Department of Physics, Faculty of Science, Islamic University of Madinah, P. O. Box: 170, Al Madinah Almonawara, 42351, Saudi Arabia
| | - Arafa H Aly
- TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt.
| | - Ashour M Ahmed
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
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15
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Zhang J, Qian Y, Nan H, Gu X, Xiao S. Large-scale MoS 2(1-x)Se 2xmonolayers synthesized by confined-space CVD. NANOTECHNOLOGY 2021; 32:355601. [PMID: 33975284 DOI: 10.1088/1361-6528/ac0026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2020] [Accepted: 05/11/2021] [Indexed: 06/12/2023]
Abstract
Alloy engineering is efficient in modulating the electronic structure and physical and chemical properties of Transition metal dichalcogenides (TMDs). Here, we develop an efficient and simple confined-space CVD strategy by using a smaller quartz boat nested in a larger quartz boat for the preparation of ternary alloy MoS2(1-x)Se2xmonolayers on SiO2/Si substrates with controllable composition. The effect of hydrogen ratio of the mixed carrier gas (Ar/H2) on the resultant flakes are systematically investigated. A hydrogon ratio of 15% is demonstrated to be the most appropriate to synthesize large size (more than 400μm) single crystalline MoS2(1-x)Se2xalloy monolayers. The composition of the alloy can also be changed in a full range (2x= 0-2) by changing the weight ratio of Se and S powder. The as-grown monolayer MoS2(1-x)Se2xalloys present continuously high crystal quality in terms of Raman and PL measurements. Furthermore, to visible light (532 nm), the MoS2(1-x)Se2xbased photodetectors display wonderful photoresponse with a fast response of less than 50 ms. Our work may be usedful in directing the synthesis of TMDs alloys as well as their optoelectronic applications.
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Affiliation(s)
- Jinming Zhang
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Yezheng Qian
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Xiaofeng Gu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Shaoqing Xiao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
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16
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Gong Y, Lin Z, Chen YX, Khan Q, Wang C, Zhang B, Nie G, Xie N, Li D. Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges. NANO-MICRO LETTERS 2020; 12:174. [PMID: 34138169 PMCID: PMC7770737 DOI: 10.1007/s40820-020-00515-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 08/04/2020] [Indexed: 05/25/2023]
Abstract
In recent years, emerging two-dimensional (2D) platinum diselenide (PtSe2) has quickly attracted the attention of the research community due to its novel physical and chemical properties. For the past few years, increasing research achievements on 2D PtSe2 have been reported toward the fundamental science and various potential applications of PtSe2. In this review, the properties and structure characteristics of 2D PtSe2 are discussed at first. Then, the recent advances in synthesis of PtSe2 as well as their applications are reviewed. At last, potential perspectives in exploring the application of 2D PtSe2 are reviewed.
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Affiliation(s)
- Youning Gong
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Zhitao Lin
- Faculty of Information Technology, Macau University of Science and Technology, Macau, 519020, People's Republic of China
| | - Yue-Xing Chen
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Qasim Khan
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
| | - Cong Wang
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Bin Zhang
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Guohui Nie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Ni Xie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Delong Li
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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17
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Kunwar S, Pandit S, Jeong JH, Lee J. Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance. NANO-MICRO LETTERS 2020; 12:91. [PMID: 34138096 PMCID: PMC7770873 DOI: 10.1007/s40820-020-00437-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2020] [Accepted: 03/25/2020] [Indexed: 05/03/2023]
Abstract
Very small metallic nanostructures, i.e., plasmonic nanoparticles (NPs), can demonstrate the localized surface plasmon resonance (LSPR) effect, a characteristic of the strong light absorption, scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons. The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors. In this work, significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture. Various size and elemental composition of monometallic Ag and Au NPs, as well as bimetallic alloy AgAu NPs, are fabricated on GaN (0001) by the solid-state dewetting approach. The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs, resulting in the highly enhanced photoresponsivity of 112 A W-1, detectivity of 2.4 × 1012 Jones and external quantum efficiency of 3.6 × 104% with the high Ag percentage of AgAu alloy NPs at a low bias of 0.1 V. The AgAu alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms, respectively. The improved photoresponse with the AgAu alloy NPs is correlated with the simultaneous effect of strong plasmon absorption and scattering, increased injection of hot electrons into the GaN conduction band and reduced barrier height at the alloy NPs/GaN interface.
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Affiliation(s)
- Sundar Kunwar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Sanchaya Pandit
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Jae-Hun Jeong
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Jihoon Lee
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea.
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18
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Lu J, Zheng Z, Yao J, Gao W, Xiao Y, Zhang M, Li J. An asymmetric contact-induced self-powered 2D In 2S 3 photodetector towards high-sensitivity and fast-response. NANOSCALE 2020; 12:7196-7205. [PMID: 32195529 DOI: 10.1039/d0nr00517g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation. To date, most self-powered photodetectors are implemented through the construction of either heterostructures or asymmetric electrode material contact, which are complex to process and costly to produce. Herein, for the first time, we achieved a self-powered operation by adopting a geometrical asymmetry in the device architecture, where a triangular non-layered 2D In2S3 flake with an asymmetric contact is combined with the traditional photogating effect. Importantly, the device achieves excellent photoresponsivity (740 mA W-1), high detectivity (1.56 × 1010 Jones), and fast response time (9/10 ms) under zero bias. Furthermore, the asymmetric In2S3/Si photodetector manifests long-term stability. Even after 1000 cycles of operation, the asymmetric In2S3/Si device displays negligible performance degradation. In sum, the above results highlight a novel route towards self-powered photodetectors with high performance, simple processing and structure in the future.
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Affiliation(s)
- Jianting Lu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China.
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19
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Yang L, Chen W, Yang R, Chen A, Zhang H, Sun Y, Jia Y, Li X, Tang Z, Gui X. Fabrication of MoO x/Mo 2C-Layered Hybrid Structures by Direct Thermal Oxidation of Mo 2C. ACS APPLIED MATERIALS & INTERFACES 2020; 12:10755-10762. [PMID: 32031373 DOI: 10.1021/acsami.9b18650] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) Mo2C, as a new member of transition metal carbides, has many intriguing properties and potential applications in superconductors and electronic devices. The thermal stability of 2D materials is essential for the performance of the related devices, especially the ones with a vertical heterostructure. However, rare reports have demonstrated the thermal stability of Mo2C and the effects of thermal stability on its performance. Here, we propose a facile and controllable method to directly oxidize Mo2C to MoOx, forming a MoOx/Mo2C heterostructure. During the oxidization process, an in situ technique is employed to uncover the transformation and thermal stability of the Mo2C. The chemical vapor deposition Mo2C shows high structural stability below 550 °C in Ar or below 350 °C in O2, which demonstrates the high thermal stability and antioxidation of the Mo2C film. The metallic Mo2C is gradually oxidized to semiconducting MoOx as the temperature increases above 350 °C. The oxidization rate can be easily controlled by adjusting the oxidation temperature and time. Further, the obtained MoOx/Mo2C vertical hybrid structure shows obvious Schottky junction behaviors, strongly indicating the perfect interfacial contact between the component layers. This work offers a new strategy for the controllable fabrication of high-quality 2D heterostructures.
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Affiliation(s)
- Leilei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Wenjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Rongliang Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Anqi Chen
- College of Innovation and Entrepreneurship, Southern University of Science and Technology, Shenzhen 518055, China
| | - Hao Zhang
- Instrumental Analysis and Research Center (IARC), Sun Yat-sen University, Guangzhou 510275, China
| | - Yibo Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Yufei Jia
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Xinming Li
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006 China
| | - Zikang Tang
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa 999078, Macau, China
| | - Xuchun Gui
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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