Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

Evolutionary Pathways of T-Phase Transition Metal Dichalcogenides: A Comprehensive Study of PtxSey Clusters

Understanding the transition from nonplanar to planar clusters is crucial for the controllable synthesis of transition metal dichalcogenide (TMDC) monolayers. Using PtSe2 as a model, we investigate how the chemical environment influences the nucleation and growth stages of monolayer PtSe2 through structure searching and first-principles calculations. We established a comprehensive database of platinum selenide clusters (PtxSey, x = 1-10), analyzing 2095 unique clusters and identifying 191 stable isomers and 63 structures with the lowest formation energy on the convex hull. Our findings reveal a chemical environment-dependent phase transition from 3D structures to the planar T-phase of PtxSey clusters, representing an evolutionary route for PtSe2 growth. Clusters such as PtSe6, Pt2Se9, Pt3Se10, and Pt7Se10 in Pt-rich environments, as well as Pt2Se15 and Pt10Se32 in Se-rich environments, have been found to exhibit high stability. Additionally, the impact of varying chemical potentials of Pt and Se on the stability of these clusters is explored. PtSe4 and PtSe6 are found to be highly stable under most experimentally achievable chemical potential conditions and may serve as dominant precursors during PtSe2 growth. This work advances our understanding of the nucleation processes of PtSe2 and other T-phase TMDC materials.

Janus Doping of Sulfur into Platinum Diselenide Ribbons

2D platinum diselenide (PtSe2), a novel member of the transition metal dichalcogenides (TMDCs) family, possesses many excellent properties, including a layer-dependent bandgap, high carrier mobility, and broadband response, making it promise for applications in technologies like field-effect transistors and room-temperature photodetectors. Doping represents an effective method to modify the electrical properties of 2D TMDCs and to bestow upon them additional functions. However, to date, little research has been conducted on the successful doping of 2D PtSe2 for modification. In this study, sulfur (S) powder is utilized during the chemical vapor deposition growth process of 2D PtSe2 ribbons and successfully integrated into the PtSe2 lattice through substitutional doping. The Au substrate significantly decreases the substitution energy of Se atoms in the lower layer of PtSe2, resulting in the formation of the Janus PtSSe structure. S-doped PtSe2 ribbons demonstrate significant symmetry breaking and enhanced electrical properties, showcasing a strong nonlinear optical response and certain synaptic plasticity, further simulating some neuromorphological processes. This study not only demonstrates a viable method for controllable doping and modification of 2D PtSe2 but also establishes a platform for exploring the characteristics of Janus TMDCs.

Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) with in-plane platinum ditelluride (PtTe2) edge contacts, mitigating the aforementioned challenges. We realized a reversible transition between semiconducting PtSe2 and metallic PtTe2 via a low-temperature anion exchange reaction compatible with the back-end-of-line (BEOL) processes. All-2D PtSe2 FETs seamlessly edge-contacted with transited metallic PtTe2 exhibited significant performance improvements compared to those with surface-contacted gold electrodes, e.g., an increase of carrier mobility and on/off ratio by over an order of magnitude, achieving a maximum hole mobility of ∼50.30 cm2 V-1 s-1 at room temperature. This study opens up new opportunities toward atomically thin 2D-TMD-based circuitries with extraordinary functionalities.

Probing Carrier Dynamics in Large-Scale MBE-Grown PtSe2 Films by Terahertz Spectroscopy

Atomically thin platinum diselenide (PtSe2) films are promising for applications in the fields of electronics, spintronics, and photodetectors owing to their tunable electronic structure and high carrier mobility. Using terahertz (THz) spectroscopy techniques, we investigated the layer-dependent semiconducting-to-metallic phase transition and associated intrinsic carrier dynamics in large-scale PtSe2 films grown by molecular beam epitaxy. The uniformity of large-scale PtSe2 films was characterized by spatially and frequency-resolved THz-based sheet conductivity mapping. Furthermore, we use an optical-pump-THz-probe technique to study the transport dynamics of photoexcited carriers and explore light-induced intergrain carrier transport in PtSe2 films. We demonstrate large-scale THz-based mapping of the electrical properties of transition metal dichalcogenide films and show that the two noncontact THz-based approaches provide insight in the spatial and temporal properties of PtSe2 films.

Make Selenium Reactive Again: Activating Elemental Selenium for Synthesis of Metal Selenides Ranging from Nanocrystals to Large Single Crystals

The inertness of elemental selenium is a significant obstacle in the synthesis of selenium-containing materials at low reaction temperatures. Over the years, several recipes have been developed to overcome this hurdle; however, most of the methods are associated with the use of highly toxic, expensive, and environmentally harmful reagents. As such, there is an increasing demand for the design of cheap, stable, and nontoxic reactive selenium precursors usable in the low-temperature synthesis of transition metal selenides with vast applications in nanotechnology, thermoelectrics, and superconductors. Herein, a novel synthetic route has been developed for activating elemental selenium by using a solvothermal approach. By comprehensive 77Se NMR, Raman, and infrared spectroscopies and gas chromatography-mass spectrometry, we show that the activated Se solution contained HSe-, [Se-Se]2-, and Se2- ions, as well as dialkyl selenide (R2Se) and dialkyl diselenide (R-Se-Se-R) species in dynamic equilibrium. This also corresponded to the first observation of naked Se22- in solution. The versatility of the developed Se precursor was demonstrated by the successful synthesis of (i) the polycrystalline room-temperature modification of the β-Ag2Se thermoelectric material; (ii) large single crystals of superconducting β-FeSe; (iii) CdSe nanocrystals with different particle sizes (3-10 nm); (iv) nanosheets of PtSe2; and (v) mono- and dibenzyl selenides and diselenides at room temperature. The simplicity and diversity of the developed Se activation method holds promise for applied and fundamental research.

Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe2 Nanofilms

In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe₂ nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe₂ nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency ω_p of 0.23 THz and a lower scattering time τ_s of 70 fs by Drude-Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe₂ film in the range of 0.1-1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm². This work proves that PtSe₂ nanofilm devices are suitable for terahertz modulators.

A Bioinspired Retinomorphic Device for Spontaneous Chromatic Adaptation

Chromatic adaptation refers to the sensing and preprocessing of the spectral composition of incident light on the retina, and it is important for color-image recognition. It is challenging to apply sensing, memory, and processing functions to color images via the same physical process using the complementary metal-oxide-semiconductor technology because of redundant data detection, complicated signal conversion processes, and the requirement for additional memory modules. Inspired by the highly efficient chromatic adaptation of the human retina, a 2D oxygen-mediated platinum diselenide (PtSe₂ ) device is presented to simultaneously apply sensing, memory, and processing functions to color images. The device exhibits a wavelength-dependent bipolar photoresponse and the linear pulse-number dependence of photoconductivity, which is dominated by the photon-mediated physical adsorption and desorption of oxygen molecules on bilayer PtSe₂ . The proposed retinomorphic device shows superior image classification accuracy (over 90%) compared to an independent pseudocolor channel (less than 75%). Hence, it is promising for developing artificial vision perception systems with reduced architectural complexity.

2D Materials-Based Static Random-Access Memory

2D transition-metal dichalcogenide semiconductors, such as MoS₂ and WSe₂ , with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)-based field-effect transistor (FET) and static random-access memory (SRAM) cells analyzing the impact of layer thickness reveals that the monolayer 2DM FET with superior electrostatics is beneficial for its ability to mitigate the read-write conflict in an SRAM cell at scaled technology nodes (1-2.1 nm). Moreover, the monolayer 2DM SRAM exhibits lower cell read access time and write time than the bilayer and trilayer 2DM SRAM cells at fixed leakage power. This simulation predicts that the optimization of 2DM SRAM designed with state-of-the-art contact resistance, mobility, and equivalent oxide thickness leads to excellent stability and operation speed at the 1-nm node. Applying the nanosheet (NS) gate-all-around (GAA) structure to 2DM further reduces cell read access time and write time and improves the area density of the SRAM cells, demonstrating a feasible scaling path beyond Si technology using 2DM NSFETs. In addition to the device design, the process challenges for 2DM NSFETs, including the cost-effective stacking of 2DM layers, formation of electrical contacts, suspended 2DM channels, and GAA structures, are also discussed.

Photocatalytic properties of anisotropic β-PtX2 (X = S, Se) and Janus β-PtSSe monolayers

The highly efficient photocatalytic water splitting process to produce clean energy requires novel semiconductor materials to achieve a high solar-to-hydrogen energy conversion efficiency. Herein, the photocatalytic properties of anisotropic β-PtX₂ (X = S, Se) and Janus β-PtSSe monolayers were investigated based on the density functional theory. The small cleavage energy for β-PtS₂ (0.44 J m^-2) and β-PtSe₂ (0.40 J m^-2) endorses the possibility of mechanical exfoliation from their respective layered bulk materials. The calculated results revealed that the β-PtX₂ monolayers have an appropriate bandgap (∼1.8-2.6 eV) enclosing the water redox potential, light absorption coefficient (∼10⁴ cm^-1), and exciton binding energy (∼0.5-0.7 eV), which facilitates excellent visible-light-driven photocatalytic performance. Remarkably, the inherent structural anisotropy leads to an anisotropic high carrier mobility (up to ∼5 × 10³ cm² V^-1 S^-1), leading to a fast transport of photogenerated carriers. Notably, the required small external potential to realize hydrogen evolution reaction and oxygen evolution reaction processes with an excellent solar-to-hydrogen energy conversion efficiency for β-PtSe₂ (∼16%) and β-PtSSe (∼18%) makes them promising candidates for solar water splitting applications.

Multi-component self-assembled molecular-electronic films: towards new high-performance thermoelectric systems

The thermoelectric properties of parallel arrays of organic molecules on a surface offer the potential for large-area, flexible, solution processed, energy harvesting thin-films, whose room-temperature transport properties are controlled by quantum interference (QI). Recently, it has been demonstrated that constructive QI (CQI) can be translated from single molecules to self-assembled monolayers (SAMs), boosting both electrical conductivities and Seebeck coefficients. However, these CQI-enhanced systems are limited by rigid coupling of the component molecules to metallic electrodes, preventing the introduction of additional layers which would be advantageous for their further development. These rigid couplings also limit our ability to suppress the transport of phonons through these systems, which could act to boost their thermoelectric output, without comprising on their impressive electronic features. Here, through a combined experimental and theoretical study, we show that cross-plane thermoelectricity in SAMs can be enhanced by incorporating extra molecular layers. We utilize a bottom-up approach to assemble multi-component thin-films that combine a rigid, highly conductive 'sticky'-linker, formed from alkynyl-functionalised anthracenes, and a 'slippery'-linker consisting of a functionalized metalloporphyrin. Starting from an anthracene-based SAM, we demonstrate that subsequent addition of either a porphyrin layer or a graphene layer increases the Seebeck coefficient, and addition of both porphyrin and graphene leads to a further boost in their Seebeck coefficients. This demonstration of Seebeck-enhanced multi-component SAMs is the first of its kind and presents a new strategy towards the design of thin-film thermoelectric materials.

Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic-integrated circuits (PICs), especially for wavelengths above 1.8 μm. Multilayered platinum diselenide (PtSe₂) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe₂-based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 μs. Fourier-transform IR spectroscopy in the wavelength range from 1.25 to 28 μm indicates the suitability of PtSe₂ for PDs far into the IR wavelength range. Our PtSe₂ PDs integrated by direct growth outperform PtSe₂ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility makes PtSe₂ an attractive 2D material for optoelectronics and PICs.

Broadband Optical Properties of Atomically Thin PtS2 and PtSe2

Noble transition metal dichalcogenides (TMDCs) such as PtS2 and PtSe2 show significant potential in a wide range of optoelectronic and photonic applications. Noble TMDCs, unlike standard TMDCs such as MoS2 and WS2, operate in the ultrawide spectral range from ultraviolet to mid-infrared wavelengths; however, their properties remain largely unexplored. Here, we measured the broadband (245-3300 nm) optical constants of ultrathin PtS2 and PtSe2 films to eliminate this gap and provide a foundation for optoelectronic device simulation. We discovered their broadband absorption and high refractive index both theoretically and experimentally. Based on first-principle calculations, we also predicted their giant out-of-plane optical anisotropy for monocrystals. As a practical illustration of the obtained optical properties, we demonstrated surface plasmon resonance biosensors with PtS2 or PtSe2 functional layers, which dramatically improves sensor sensitivity by 60 and 30%, respectively.

Exciton-Dominated Ultrafast Optical Response in Atomically Thin PtSe2

Strongly bound excitons are a characteristic hallmark of 2D semiconductors, enabling unique light-matter interactions and novel optical applications. Platinum diselenide (PtSe₂ ) is an emerging 2D material with outstanding optical and electrical properties and excellent air stability. Bulk PtSe₂ is a semimetal, but its atomically thin form shows a semiconducting phase with the appearance of a band-gap, making one expect strongly bound 2D excitons. However, the excitons in PtSe₂ have been barely studied, either experimentally or theoretically. Here, the authors directly observe and theoretically confirm excitons and their ultrafast dynamics in mono-, bi-, and tri-layer PtSe₂ single crystals. Steady-state optical microscopy reveals exciton absorption resonances and their thickness dependence, confirmed by first-principles calculations. Ultrafast transient absorption microscopy finds that the exciton dominates the transient broadband response, resulting from strong exciton bleaching and renormalized band-gap-induced exciton shifting. The overall transient spectrum redshifts with increasing thickness as the shrinking band-gap redshifts the exciton resonance. This study provides novel insights into exciton photophysics in platinum dichalcogenides.

Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials

The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectronic devices. These are mainly associated with the potential for low noise while maintaining high internal quantum efficiency when reducing IR absorber thicknesses. In this study, we introduce a new van der Waals material candidate, zirconium germanium telluride (ZrGeTe₄), to a growing family of promising IR van der Waals materials. We find the bulk form ZrGeTe₄ has an indirect band edge around ∼0.5 eV, in close agreement with previous theoretical predictions. This material is found to be stable up to 140 °C and shows minimal compositional variation even after >30 days storage in humid air. We demonstrate simple proof-of-concept broad spectrum photodetectors with responsivities above 0.1 AW^-1 across both the visible and short-wave infrared wavelengths. This corresponds to a specific detectivity of ∼10⁹ cm Hz^1/2 W^-1 at λ = 1.4 μm at room temperature. These devices show a linear photoresponse vs illumination intensity relationship over ∼4 orders of magnitude, and fast rise/fall times of ∼50 ns, also verified by a 3 dB roll-off frequency of 5.9 MHz. As the first demonstration of photodetection using ZrGeTe₄, these characteristics measured on a simple proof-of-concept device show the exciting potential of the ZrGeTe₄ for room temperature IR optoelectronic applications.

Anion Modulation of Pt-Group Metals and Electrocatalysis Applications

Pt-group metal (PGM) electrocatalysts with unique electronic structures and irreplaceable comprehensive properties play crucial roles in electrocatalysis. Anion engineering can create a series of PGM compounds (such as RuP₂ , IrP₂ , PtP₂ , RuB₂ , Ru₂ B₃ , RuS₂ , etc.) that provide a promising prospect for improving the electrocatalytic performance and use of Pt-group noble metals. This review seeks the electrochemical activity origin of anion-modulated PGM compounds, and systematically analyzes and summarizes their synthetic strategies and energy-relevant applications in electrocatalysis. Orientation towards the sustainable development of nonfossil resources has stimulated a blossoming interest in the design of advanced electrocatalysts for clean energy conversion. The anion-modulated strategy for Pt-group metals (PGMs) by means of anion engineering possesses high flexibility to regulate the electronic structure, providing a promising prospect for constructing electrocatalysts with superior activity and stability to satisfy a future green electrochemical energy conversion system. Based on the previous work of our group and others, this review summarizes the up-to-date progress on anion-modulated PGM compounds (such as RuP₂ , IrP₂ , PtP₂ , RuB₂ , Ru₂ B₃ , RuS₂ , etc.) in energy-related electrocatalysis from the origin of their activity and synthetic strategies to electrochemical applications including hydrogen evolution reaction (HER), oxygen evolution reaction (OER), oxygen reduction reaction (ORR), hydrogen oxidation reaction (HOR), N₂ reduction reaction (NRR), and CO₂ reduction reaction (CO₂ RR). At the end, the key problems, countermeasures and future development orientations of anion-modulated PGM compounds toward electrocatalytic applications are proposed.

Tuning the charge carrier mobility in few-layer PtSe2 films by Se : Pt ratio

Recently, few-layer PtSe2 films have attracted significant attention due to their properties and promising applications in high-speed electronics, spintronics and optoelectronics. Until now, the transport properties of this material have not reached the theoretically predicted values, especially with regard to carrier mobility. In addition, it is not yet known which growth parameters (if any) can experimentally affect the carrier mobility value. This work presents the fabrication of horizontally aligned PtSe2 films using one-zone selenization of pre-deposited platinum layers. We have identified the Se : Pt ratio as a parameter controlling the charge carrier mobility in the thin films. The mobility increases more than twice as the ratio changes in a narrow interval around a value of 2. A simultaneous reduction of the carrier concentration suggests that ionized impurity scattering is responsible for the observed mobility behaviour. This significant finding may help to better understand the transport properties of few-layer PtSe2 films.

Evolution of low-dimensional material-based field-effect transistors

Field-effect transistors (FETs) have tremendous applications in the electronics industry due to their outstanding features such as small size, easy fabrication, compatibility with integrated electronics, high sensitivity, rapid detection and easy measuring procedures. However, to meet the increasing demand of the electronics industry, efficient FETs with controlled short channel effects, enhanced surface stability, reduced size, and superior performances based on low-dimensional materials are desirable. In this review, we present the developmental roadmap of FETs from conventional to miniaturized devices and highlight their prospective applications in the field of optoelectronic devices. Initially, a detailed study of the general importance of bulk and low-dimensional materials is presented. Then, recent advances in low-dimensional material heterostructures, classification of FETs, and the applications of low-dimensional materials in field-effect transistors and photodetectors are presented in detail. In addition, we also describe current issues in low-dimensional material-based FETs and propose potential approaches to address these issues, which are crucial for developing electronic and optoelectronic devices. This review will provide guidelines for low-dimensional material-based FETs with high performance and advanced applications in the future.