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For: Allongue P, Blonkowski S. Corrosion of III-V compounds; a comparative study of GaAs and InP. ACTA ACUST UNITED AC 1991. [DOI: 10.1016/0022-0728(91)87036-4] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
Number Cited by Other Article(s)
1
Samu GF, Janáky C. Photocorrosion at Irradiated Perovskite/Electrolyte Interfaces. J Am Chem Soc 2020;142:21595-21614. [PMID: 33337148 PMCID: PMC7775617 DOI: 10.1021/jacs.0c10348] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
2
Nandjou F, Haussener S. Kinetic Competition between Water-Splitting and Photocorrosion Reactions in Photoelectrochemical Devices. CHEMSUSCHEM 2019;12:1984-1994. [PMID: 30644167 DOI: 10.1002/cssc.201802558] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2018] [Revised: 12/10/2018] [Indexed: 06/09/2023]
3
Shavorskiy A, Ye X, Karslıoğlu O, Poletayev AD, Hartl M, Zegkinoglou I, Trotochaud L, Nemšák S, Schneider CM, Crumlin EJ, Axnanda S, Liu Z, Ross PN, Chueh W, Bluhm H. Direct Mapping of Band Positions in Doped and Undoped Hematite during Photoelectrochemical Water Splitting. J Phys Chem Lett 2017;8:5579-5586. [PMID: 29083905 DOI: 10.1021/acs.jpclett.7b02548] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
4
Bansal A, Turner JA. Suppression of Band Edge Migration at the p-GaInP2/H2O Interface under Illumination via Catalysis. J Phys Chem B 2000. [DOI: 10.1021/jp000387s] [Citation(s) in RCA: 29] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
5
Influence of the doping concentration on the electrochemical etching of semiconductors. Electrochim Acta 1993. [DOI: 10.1016/0013-4686(93)87006-y] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
6
Ba B, Fotouhi B, Gabouze N, Gorochov O, Cachet H. Dependence of the flat-band potential of n-type GaAs on the redox potential in methanol and acetonitrile. J Electroanal Chem (Lausanne) 1992. [DOI: 10.1016/0022-0728(92)80577-q] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
7
Allongue P, Blonkowski S, Souteyrand E. Experimental investigation of charge transfer at the semiconductor/electrolyte junction. Electrochim Acta 1992. [DOI: 10.1016/0013-4686(92)85032-g] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
8
Allongue P, Blonkowski S. Corrosion of III–V compounds; a comparative study of GaAs and InP. ACTA ACUST UNITED AC 1991. [DOI: 10.1016/0022-0728(91)85004-9] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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