Simulation of thin film grain structures—II. Abnormal grain growth

Influence of Plasma Surface Treatment of Polyimide on the Microstructure of Aluminum Thin Films

The effects of plasma treatment of polyimide substrates on the texture and grain size distribution of aluminum thin films were studied. Oxygen-argon plasma treatment increased the average grain size and enhanced the (111) film texture. For short oxygen-argon plasma treatment times, the deposited Al films showed a (111) texture with a bimodal grain structure and even a {111}<112¯> type in-plane texture. The preferential nucleation and grain growth of (111) grains are discussed in terms of the interface energy anisotropy.

First-principles calculations for understanding microstructures and mechanical properties of co-sputtered Al alloys

Recent experimental studies show that co-sputtering solutes with Al, together, can refine columnar grain size around few tens of nanometers and promote the formation and enhance the stability of planar defects such as stacking faults (SFs) and grain boundaries (GBs) in Al alloys. These crystal defects and fine columnar grains result in high strength, enhanced strain hardening and thermal stability of Al alloys. Using first-principles density-functional theory (DFT) calculations, we studied the role of eleven solutes in tailoring kinetics and energetics of adatoms and clusters on Al {111} surface, stable and unstable stacking fault energies, and kinetic energy barriers for the migration of defects. The calculations show that most solutes can effectively refine columnar grain size by decreasing the diffusivity of adatoms and surface clusters. These solutes do not necessarily decrease the stacking fault energy of Al alloys, but reduce the formation energy of faulted surface clusters and increase the energy barriers for the recovery of faulted surface clusters. Correspondingly, the formation of SFs is kinetically promoted during sputtering. Furthermore, solutes are segregated into the core of Shockley partial dislocations and play a pinning effect on SFs, SF arrays and twin boundaries, enhancing the thermal stability of these crystal defects. These findings provide insights into the design of high-strength Al alloys for high-temperature applications.

Ultra-large single crystals by abnormal grain growth

Producing a single crystal is expensive because of low mass productivity. Therefore, many metallic materials are being used in polycrystalline form, even though material properties are superior in a single crystal. Here we show that an extraordinarily large Cu-Al-Mn single crystal can be obtained by abnormal grain growth (AGG) induced by simple heat treatment with high mass productivity. In AGG, the sub-boundary energy introduced by cyclic heat treatment (CHT) is dominant in the driving pressure, and the grain boundary migration rate is accelerated by repeating the low-temperature CHT due to the increase of the sub-boundary energy. With such treatment, fabrication of single crystal bars 70 cm in length is achieved. This result ensures that the range of applications of shape memory alloys will spread beyond small-sized devices to large-scale components and may enable new applications of single crystals in other metallic and ceramics materials having similar microstructural features.Growing large single crystals cheaply and reliably for structural applications remains challenging. Here, the authors combine accelerated abnormal grain growth and cyclic heat treatments to grow a superelastic shape memory alloy single crystal to 70 cm.

Correlation between Al grain size, grain boundary grooves and local variations in oxide barrier thickness of Al/AlOx/Al tunnel junctions by transmission electron microscopy

A thickness variation of only one Ångström makes a significant difference in the current through a tunnel junction due to the exponential thickness dependence of the current. It is thus important to achieve a uniform thickness along the barrier to enhance, for example, the sensitivity and speed of single electron transistors based on the tunnel junctions. Here, we have observed that grooves at Al grain boundaries are associated with a local increase of tunnel barrier thickness. The uniformity of the barrier thickness along the tunnel junction thus increases with increasing Al grain size. We have studied the effect of oxidation time, partial oxygen pressure and also temperature during film growth on the grain size. The implications are that the uniformity improves with higher temperature during film growth.

Crystalline photoactive copper indium diselenide thin films by pulsed laser crystallization of nanoparticle-inks at ambient conditions

Direct pulsed laser crystallization (DPLC) is explored to rapidly crystallize large area coated copper indium diselenide (CIS) nanoparticle-inks.

Simulation of Microstructural Evolution in Polycrystalline Films

This paper will review the topic of computer simulation of the evolution of grain structure in polycrystalline thin films, with particular attention to the modelling of the grain growth process. If the grain size is small compared to the film thickness, then the grain structure is three-dimensional. As the grains grow to become larger than the film thickness, so that most grains traverse the entire thickness of the film, the microstructure may approach the conditions for a two-dimensional grain structure. Both two- and three-dimensional grain growth have been simulated by various authors.

When the grains become large enough for the microstructure to be two-dimensional, the surface energy associated with the two free surfaces of the film becomes comparable to the surface energy of the grain boundaries. In this condition, the free surface may profoundly effect the grain growth. One effect is that grooves may develop along the lines where the grain boundaries meet the free surfaces. This grooving may pin the boundaries against further migration and lead to grain-growth stagnation. Another possible effect is that differences in the free surface energy for grains with different crystallographic orientation may provide a driving force for the migration of the boundaries which is additional to that provided by grain boundary capillarity. Grains with favorable orientations will grow at the expense of grains with unfavorable orientations. The coupling of grain-growth stagnation with an additional driving force can produce abnormal or secondary grain growth in which a few grains grow very large by consuming the normal grains.

Grain Growth in Polycrystalline Thin Films

The performance and reliability of polycrystalline films are strongly affected by the average grain size and the distribution of grain sizes and orientations. These are often controlled through grain growth phenomena which occur during film formation and during subsequent processing. Abnormal rather than normal grain growth is most common in thin films, and leads to an evolution in the distribution of grain orientations as well as grain sizes, often leading to uniform or restricted crystallographic orientations or textures. Surface and interface energy minimization and strain energy minimization can lead to development of different textures, depending on which is dominant. The final texture resulting from grain growth depends on the film thickness, the deposition temperature, the grain growth temperature, the thermal expansion coefficients of the film and substrate, and the mechanical properties of the film, as well as other factors.

Grain Growth in Thin Films With Variable Grain Boundary Energy

In simulations of grain growth in thin films we have considered the effect of variations in grain boundary energy. Boundary energy depends on both the misorientation between the two neighboring grains, and the angles which the boundary plane makes with the crystallographic axes of the two crystals. Variations in grain boundary energy mean that dihedral angles at triple junctions deviate from 120°. The proportionality between boundary velocities and local curvatures, and the critical curvature for boundary pinning due to surface grooving also both depend on boundary energy. One effect of variable boundary energies is that grains no longer gain or lose area at rates determined solely by their topology or number of sides. (They no longer obey the Von Neumann/Mullins law). Another effect is that as the grain structures evolve, the fraction of high-energy boundaries decreases. Also, the stagnant structures have broader grain size distributions.

Computer Simulation of Strain Energy and Surface- and Interface-Energy on Grain Growth in Thin Films

We have simulated strain energy effects and surface- and interface-energy effects on grain growth in thin films, using properties of polycrystalline Ag (p-Ag) on single crystal (001) Ni on (001) MgO for comparison with experiments. Surface- and interface-energy and strain energy reduction drive the growth of grains of specific crystallographic orientations. The texture that will result when grain growth has occurred minimizes the sum of these driving forces. In the elastic regime, strain energy density differences result from the orientation dependence of the elastic constants of the biaxially strained films. In the plastic regime, strain energy also depends on grain diameter and film thickness. In p-Ag/(001) Ni, surface- and interface-energy minimization favors Ag grains with (11) texture. In the absence of a grain growth stagnation, the texture at later times is always (111). However, for high enough strains and large enough thicknesses, the strain energy driving force can favor a (001) texture at early times, which reverts to a (111) texture at later times, once the grains have yielded.