A novel ferroelectric based on quinuclidine derivatives

Intermolecular Forces Regulating the Phase-Transition Temperatures in Organic-Inorganic Hybrid Materials

Organic-inorganic hybrid phase-transition materials have attracted widespread attention in energy storage and sensor applications due to their structural adaptability and facile synthesis. However, increasing the phase-transition temperature (Tc) effectively remains a formidable challenge. In this study, we employed a strategy to regulate intermolecular interactions (different types of hydrogen bonds and other weak interactions), utilizing bismuth chloride as an inorganic framework and azetidine, 3,3-difluoro azetidine, and 3-carboxyl azetidine as organic components to synthesize three compounds with different Tc values: [C3H8N]2BiCl5 (1, 234 K), [C3H6NF2]3BiCl6 (2, 256 K), and [C4H8O2N]3BiCl6 (3, 350 K). 1 is a one-dimensional chain structure and 2 and 3 are zero-dimensional structures. Analysis of the crystal structure and the Hirshfeld surface and 2D fingerprints further suggests that the intermolecular forces are efficiently modulated. These findings emphasize the efficacy of our strategy in enhancing Tc and may facilitate further research in this area.

Integrated Reversible Thermochromism, High Tc , Dielectric Switch and Narrow Band Gap in One Multifunctional Ferroic

Organic-inorganic Hybrid (OIH) materials for multifunctional switchable applications have attracted enormous attention in recent years due to their excellent optoelectronic properties and good structural tunability. However, it still remains challenging to fabricate one simple OIH compound with multi-functionals properties, such as dielectric switching, thermochromic properties, semiconductor characteristics and ferroelasticity. Under this context, we successfully synthesized [2-(2-fluorophenyl)ethan-1- ammonium]₂ SnBr₆ (compound 1), which has a higher phase transition temperature of 427.7 K. Additionally, it exhibits a semiconducting property with an indirect band gap of 2.36 eV. Combining ferroelastic, narrow band gap, thermochromic, and dielectric properties, compound 1 can be considered as a rarely reported multi-functional ferroelastic material, which is expected to give inspiration for broadening the applications in the smart devices field.

Band gap modulation of organic–inorganic Sb(iii) halide by molecular design

Four organic–inorganic hybrid materials were designed, and a successful adjustment of the band gap was obtained, from 2.933 eV to as low as 2.788 eV, via replacing the third hydrogen atom of the benzene ring in the organic cation with a halogen.

Dual-channel control of ferroelastic domains in a host–guest inclusion compound

By replacing [PF6]− with the larger [TFSA]−, the phase transition temperature is increased from 305 K to 342 K in a host–guest inclusion ferroelastic crystal, [(3,4-DFA)(18-crown-6)][TFSA], which can realize dual-channel (thermal and stress) control of ferroelastic domains.

Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO4) Thin Films

The low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO₄) is one such molecular FE crystal that exhibits ferroelectricity when crystallized in an intermediate temperature phase (ITP). However, bulk HQReO₄ crystals exhibit ferroelectricity only for a narrow temperature window (22 K), above and below which the polar phase transforms to a non-FE phase. The FE phase or ITP of HQReO₄ should be stabilized in a much wider temperature range for practical applications. Here, to stabilize the FE phase (ITP) in a wider temperature range, highly oriented thin films of HQReO₄ were prepared using a simple solution process. A slow evaporation method was adapted for drying the HQReO₄ thin films to control the morphology and the temperature window. The temperature window of the intermediate temperature FE phase was successfully widened up to 35 K by merely varying the film drying temperature between 333 and 353 K. The strategy of stabilizing the FE phase in a wider temperature range can be adapted to other molecular FE materials to realize flexible electronic devices.