Recent advances in development of nanostructured photodetectors from ultraviolet to infrared region: A review

Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga2O3 Phototransistors

We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet (DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold voltage (VT) switches between negative and positive depending on the β-Ga2O3 channel thickness and doping concentration. Channel depletion and Ga diffusion during manufacturing significantly influence device characteristics, as validated through computer-aided design (TCAD) simulations, which agree with the experimental results. We achieved enhancement-mode (e-mode) operation in <10 nm-thick channels, enabling a zero VG to achieve a low dark current (1.84 pA) in a fully depleted equilibrium. Quantum confinement in thin β-Ga2O3 layers enhances UV detection (down to 210 nm) by widening the band gap. Compared with bulk materials, dimensionally constrained optical absorption reduces electron-phonon interactions and phonon scattering, leading to faster optical responses. Decreasing β-Ga2O3 channel thickness reduces VT and VG, enhancing power efficiency, dark current, and the photo-to-dark current ratio under dark and illuminated conditions. These results can guide the fabrication of tailored Ga2O3-based DUV phototransistors.

Self-Powered ZnO@PdTe2/Si Heterojunction Photodetector with an Ultrafast Response for Color Imaging and Optical Communication

Broadband photodetectors have attracted much attention due to their multispectral response properties and show great potential in the fields of optical sensing, multispectral imaging, and optical communications. Palladium telluride (PdTe2) is highly competitive in broadband detection due to its tunable bandgap and nonlinear optical properties. However, the low response speed hinders further improvement in the performance of PdTe2-based broadband photodetectors. In this work, we present island-type ZnO@PdTe2 composites on Si as a heterojunction photodetector exhibiting highly sensitive photodetection capabilities in a wide band from the solar-blind region (254 nm) to the short-infrared (1.55 μm). Due to the island-type morphology of the ZnO@PdTe2 composites effectively enhancing light absorption and the ZnO@PdTe2/Si stacks forming a type-II heterojunction accelerating carrier separation, the devices have an ultrafast response (1.58/1.34 μs), a detectivity of up to 1.56 × 1013 Jones, and a sensitivity of up to 107 cm2/W. A triple-channel color imaging system and a dual-channel data transmission system were developed based on the excellent and stable performance of the device. This study demonstrates the great potential of ZnO@PdTe2/Si vertical heterojunction photodetectors for high-speed, wide-band, multiscenario optical communication.

Advances in flame synthesis of nano-scale architectures for chemical, biomolecular, plasmonic, and light sensing

Flame spray pyrolysis (FSP), a key technique under the broader category of flame aerosol synthesis, is being increasingly explored for the design of advanced miniaturized sensor architectures with applications including chemical, biomolecular, plasmonic, and light sensing. This review provides an overview of the advantages of FSP for the fabrication of nanostructured materials for sensing, delving into synthesis strategies and material structures that meet the increasing demands for miniaturized sensor devices. We focus on the fundamentals of FSP, discussing reactor configurations and how process parameters such as precursor compositions, flow rates, and temperature influence nanoparticle characteristics and their sensing performance. A detailed analysis of nanostructures, compositions, and morphologies made by FSP and their applications in chemical, chemiresistive, plasmonic, biosensing, and light sensing is presented. This review identifies the challenges and opportunities of FSP, exploring current limitations and potential improvements for industrial translation. We conclude by highlighting future research directions aiming to establish guidelines for the flame-based design of nano-scale sensing architectures.

Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials

Flexible photodetectors (PDs) have exotic significance in recent years due to their enchanting potential in future optoelectronics. Moreover, paper-based fabricated PDs with outstanding flexibility unlock new avenues for future wearable electronics. Such PD has captured scientific interest for its efficient photoresponse properties due to the extraordinary assets like significant absorptive efficiency, surface morphology, material composition, affordability, bendability, and biodegradability. Quantum-confined materials harness the unique quantum-enhanced properties and hold immense promise for advancing both fundamental scientific understanding and practical implication. Two-dimensional (2D) materials as quantum materials have been one of the most extensively researched materials owing to their significant light absorption efficiency, increased carrier mobility, and tunable band gaps. In addition, 2D heterostructures can trap charge carriers at their interfaces, leading increase in photocurrent and photoconductivity. This review represents comprehensive discussion on recent developments in such PDs functionalized by 2D materials, highlighting charge transfer mechanism at their interface. This review thoroughly explains the mechanism behind the enhanced performance of quantum materials across a spectrum of figure of merits including external quantum efficiency, detectivity, spectral responsivity, optical gain, response time, and noise equivalent power. The present review studies the intricate mechanisms that reinforce these improvements, shedding light on the intricacies of quantum materials and their significant capabilities. Moreover, a detailed analysis of the technical applicability of paper-based PDs has been discussed with challenges and future trends, providing comprehensive insights into their practical usage in the field of future wearable and portable electronic technologies.

Modular slot-die coater for in situ grazing-incidence x-ray scattering experiments on thin films

Multimodal in situ experiments during slot-die coating of thin films pioneer the way to kinetic studies on thin-film formation. They establish a powerful tool to understand and optimize the formation and properties of thin-film devices, e.g., solar cells, sensors, or LED films. Thin-film research benefits from time-resolved grazing-incidence wide- and small-angle x-ray scattering (GIWAXS/GISAXS) with a sub-second resolution to reveal the evolution of crystal structure, texture, and morphology during the deposition process. Simultaneously investigating optical properties by in situ photoluminescence measurements complements in-depth kinetic studies focusing on a comprehensive understanding of the triangular interdependency of processing, structure, and function for a roll-to-roll compatible, scalable thin-film deposition process. Here, we introduce a modular slot-die coater specially designed for in situ GIWAXS/GISAXS measurements and applicable to various ink systems. With a design for quick assembly, the slot-die coater permits the reproducible and comparable fabrication of thin films in the lab and at the synchrotron using the very same hardware components, as demonstrated in this work by experiments performed at Deutsches Elektronen-Synchrotron (DESY). Simultaneous to GIWAXS/GISAXS, photoluminescence measurements probe optoelectronic properties in situ during thin-film formation. An environmental chamber allows to control the atmosphere inside the coater. Modular construction and lightweight design make the coater mobile, easy to transport, quickly extendable, and adaptable to new beamline environments.

3D Printed Lattice Template by Material Extrusion Technique for Fabrication of Pixelated Photodetector

Rigid and flexible, pixelated ultraviolet photodetectors (PD) based on ZnO have been fabricated by material extrusion 3D printing technique. The photoresponse is studied in an out-of-plane configuration. An open lattice structure is printed using PLA over ITO/Glass substrate for rigid, and TPU over ITO/PET substrate for flexible PDs. ZnO slurry is filled selectively into the columnar matrix by the microdispensing technique. The optical detector printed on ITO/Glass substrate shows a sensitivity of 25 and responsivity of 1.55 nA/mW with a rise and decay time of 1.6 and 0.6 s, respectively. Similarly, the flexible PD printed using TPU lattice shows a sensitivity of 9.5 and responsivity of 0.38 nA/mW with a rise and decay time of 1.8 and 0.6 s, respectively. The charge transport mechanism is studied using band diagram analysis. 3D printed open lattice structure is found to be a potential template for sensor fabrication. This work demonstrates the capability of material extrusion 3D printing with an open lattice structure for the fabrication of high-resolution pixelated PDs.

Pyro-Phototronic Effect-Enhanced Photocurrent of a Self-Powered Photodetector Based on ZnO Nanofiber Arrays/BaTiO3 Films

Self-powered photodetectors (PD) based on ferroelectric materials have gained huge attention because of the spontaneous polarization and unique photovoltaic effect. However, the low photocurrent values and switch ratio of the ferroelectric materials limit their further practical applications in a wide temperature range. In this study, the self-powered ZnO nanofiber array/BaTiO3 (ZnO-NFA/BTO) PD was fabricated by high-ordered ZnO-NFA via electrospinning method deposited on a 300 nm BTO film synthesized using sol-gel method. The electrospinning can prepare ZnO-NFAs with a controllable diameter (100 nm) and orientation and is directly deposited on the quartz at a large scale, which simplifies the fabrication process. This device possesses a greater on/off ratio of 2357 at zero bias than that of BTO PD (3.33) and the ZnO-NFA PD (125) at 0.2 V. The highest responsivity and specific detectivity are 1.41 mA W-1 and 1.48 × 109 Jones at 368 nm under 0 V bias, respectively, which is enhanced about three magnitudes than the pristine BTO PD (1.21 μA W-1 and 1.02 × 109 Jones). The photocurrent of the ZnO-NFA/BTO PD strongly depends on the temperature. After the cooling system and prepolarization processing are both introduced, the largest light current (475 nA) and photovoltaic plateaus (585 nA) are enhanced by about 4417 and 4278% under 368 nm at a power intensity of 4.46 mW cm-2 at 0 °C, respectively. The enhancement of photocurrent is associated with a ferro-pyro-phototronic effect, evidenced by enhanced ferroelectric polarization. The ZnO-NFA/BTO PD can detect weak signals at low power intensity with a wide temperature range of 0-100 °C under 0 V bias. The self-powered ZnO-NFA/BTO PD provides a new and promising way to fabricate high-performance and low-cost photodetectors from inorganic perovskite materials.

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.

Recent Progress in Micro- and Nanotechnology-Enabled Sensors for Biomedical and Environmental Challenges

Micro- and nanotechnology-enabled sensors have made remarkable advancements in the fields of biomedicine and the environment, enabling the sensitive and selective detection and quantification of diverse analytes. In biomedicine, these sensors have facilitated disease diagnosis, drug discovery, and point-of-care devices. In environmental monitoring, they have played a crucial role in assessing air, water, and soil quality, as well as ensured food safety. Despite notable progress, numerous challenges persist. This review article addresses recent developments in micro- and nanotechnology-enabled sensors for biomedical and environmental challenges, focusing on enhancing basic sensing techniques through micro/nanotechnology. Additionally, it explores the applications of these sensors in addressing current challenges in both biomedical and environmental domains. The article concludes by emphasizing the need for further research to expand the detection capabilities of sensors/devices, enhance sensitivity and selectivity, integrate wireless communication and energy-harvesting technologies, and optimize sample preparation, material selection, and automated components for sensor design, fabrication, and characterization.

Micro/Nano-Fabrication of Flexible Poly(3,4-Ethylenedioxythiophene)-Based Conductive Films for High-Performance Microdevices

With the increasing demands for novel flexible organic electronic devices, conductive polymers are now becoming the rising star for reaching such targets, which has witnessed significant breakthroughs in the fields of thermoelectric devices, solar cells, sensors, and hydrogels during the past decade due to their outstanding conductivity, solution-processing ability, as well as tailorability. However, the commercialization of those devices still lags markedly behind the corresponding research advances, arising from the not high enough performance and limited manufacturing techniques. The conductivity and micro/nano-structure of conductive polymer films are two critical factors for achieving high-performance microdevices. In this review, the state-of-the-art technologies for developing organic devices by using conductive polymers are comprehensively summarized, which will begin with a description of the commonly used synthesis methods and mechanisms for conductive polymers. Next, the current techniques for the fabrication of conductive polymer films will be proffered and discussed. Subsequently, approaches for tailoring the nanostructures and microstructures of conductive polymer films are summarized and discussed. Then, the applications of micro/nano-fabricated conductive films-based devices in various fields are given and the role of the micro/nano-structures on the device performances is highlighted. Finally, the perspectives on future directions in this exciting field are presented.

The Historical Development of Infrared Photodetection Based on Intraband Transitions

The infrared technology is entering widespread use as it starts fulfilling a growing number of emerging applications, such as smart buildings and automotive sectors. Majority of infrared photodetectors are based on interband transition, which is the energy gap between the valence band and the conduction band. As a result, infrared materials are mainly limited to semi-metal or ternary alloys with narrow-bandgap bulk semiconductors, whose fabrication is complex and expensive. Different from interband transition, intraband transition utilizing the energy gap inside the band allows for a wider choice of materials. In this paper, we mainly discuss the recent developments on intraband infrared photodetectors, including 'bottom to up' devices such as quantum well devices based on the molecular beam epitaxial approach, as well as 'up to bottom' devices such as colloidal quantum dot devices based on the chemical synthesis.

Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor

Optical synapse is the basic component for optical neuromorphic computing and is attracting great attention, mainly due to its great potential in many fields, such as image recognition, artificial intelligence and artificial visual perception systems. However, optical synapse with infrared (IR) response has rarely been reported. InAs nanowires (NWs) have a direct narrow bandgap and a large surface to volume ratio, making them a promising material for IR detection. Here, we demonstrate a near-infrared (NIR) (750 to 1550 nm) optical synapse for the first time based on a poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))-coated InAs NW field-effect transistor (FET). The responsivity of the P(VDF-TrFE)-coated InAs NW FET reaches 839.3 A/W under 750 nm laser illumination, demonstrating the advantage of P(VDF-TrFE) coverage. The P(VDF-TrFE)-coated InAs NW device exhibits optical synaptic behaviors in response to NIR light pulses, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF) and a transformation from short-term plasticity (STP) to long-term plasticity (LTP). The working mechanism is attributed to the polarization effect in the ferroelectric P(VDF-TrFE) layer, which dominates the trapping and de-trapping characteristics of photogenerated holes. These findings have significant implications for the development of artificial neural networks.

MOF-Derived In2O3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors

Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In₂O₃)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In₂O₃-based PEC UV PDs for the first time. In₂O₃ microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In₂O₃ MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 10¹⁰ Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In₂O₃ MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In₂O₃ holds great promise in high-performance PEC UV PDs.

Advances in Mid-Infrared Single-Photon Detection

The current state of the art of single-photon detectors operating in the mid-infrared wavelength range is reported in this review. These devices are essential for a wide range of applications, such as mid-infrared quantum communications, sensing, and metrology, which require detectors with high detection efficiency, low dark count rates, and low dead times. The technological challenge of moving from the well-performing and commercially available near-infrared single-photon detectors to mid-infrared detection is discussed. Different approaches are explored, spanning from the stoichiometric or geometric engineering of a large variety of materials for infrared applications to the exploitation of alternative novel materials and the implementation of proper detection schemes. The three most promising solutions are described in detail: superconductive nanowires, avalanche photodiodes, and photovoltaic detectors.

Application of Nanostructured TiO2 in UV Photodetectors: A Review

As a wide-bandgap semiconductor material, titanium dioxide (TiO₂ ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low-cost fabrication, the construction of high-performance photodetectors (PDs) based on TiO₂ nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO₂ -based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon-generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in-depth illustration of the electrical and optical properties of TiO₂ nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p-type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO₂ -based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO₂ and shed light on the preparation of more efficient TiO₂ nanostructures and heterojunctions for future photoelectric applications.

A Study on UVC Photodetector Using Mixed-Cation Perovskite with High Detection Rate as Light-Absorption Layer

In this study, a mixed-cation perovskite ultraviolet (UV) C photodetector was fabricated using a simple formamidinium iodide (FAI) post-treatment process. The fabricated device uses FA_xMA_1−xPbI₃ perovskite as a light-absorption layer and SnO₂, which has high transmittance in the UVC wavelength region, as an electron-transport layer. The fabricated device exhibited a response of 50.8 mA/W, detectability of 4.47 × 10¹³ Jones, and external quantum efficiency of 53%. Therefore, the approach used in this study is promising for many applications in the UVC wavelength region.

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi₂Te₃) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi₂Te₃ layer, a Gr/Bi₂Te₃/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 10¹² Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light-matter interaction at the high-quality heterointerface of Bi₂Te₃/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi₂Te₃ for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.

Chemical vapor deposition merges MoS2 grains into high-quality and centimeter-scale films on Si/SiO2

Two-dimensional molybdenum disulfide (MoS2) has attracted increasing attention due to its promise for next-generation electronics. To realize MoS2-based electronics, however, a synthesis method is required that produces a uniform single-layer material and that is compatible with existing semiconductor fabrication techniques. Here, we demonstrate that uniform films of single-layer MoS2 can be directly produced on Si/SiO2 at wafer-scale without the use of catalysts or promoters. Control of the precursor transport through oxygen dosing yielded complete coverage and increased connectivity between crystalline MoS2 domains. Spectroscopic characterization and carrier transport measurements furthermore revealed a reduced density of defects compared to conventional chemical vapor deposition growth that increased the quantum yield over ten-fold. To demonstrate the impact of enhanced scale and optoelectronic performance, centimeter-scale arrays of MoS2 photosensors were produced that demonstrate unprecedentedly high and uniform responsivity. Our approach improves the prospect of MoS2 for future applications.

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO₂ thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but excellent UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p-n junction fabricated from these materials has the potential to act as a high-performance UV photovoltaic photodetector. The proposed structure, demonstrates fast responses in order of sub seconds, photosensitivity of ~ 41,000, responsivity of 1.645 mA/W, and a detectivity of 3.52 × 10¹² Jones that are significantly improved in comparison with the Al-doped ZnO photoconductor. This excellent improvement is attributed to the capability of the photovoltaic configuration that creates a built-in voltage and facilitates the charge separation and collection rather than recombination in the photoconductor configuration.