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Sharma M, Mazumder N, Ajayan PM, Deb P. Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials. J Phys Condens Matter 2024; 36:283001. [PMID: 38574668 DOI: 10.1088/1361-648x/ad3abf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 04/04/2024] [Indexed: 04/06/2024]
Abstract
Flexible photodetectors (PDs) have exotic significance in recent years due to their enchanting potential in future optoelectronics. Moreover, paper-based fabricated PDs with outstanding flexibility unlock new avenues for future wearable electronics. Such PD has captured scientific interest for its efficient photoresponse properties due to the extraordinary assets like significant absorptive efficiency, surface morphology, material composition, affordability, bendability, and biodegradability. Quantum-confined materials harness the unique quantum-enhanced properties and hold immense promise for advancing both fundamental scientific understanding and practical implication. Two-dimensional (2D) materials as quantum materials have been one of the most extensively researched materials owing to their significant light absorption efficiency, increased carrier mobility, and tunable band gaps. In addition, 2D heterostructures can trap charge carriers at their interfaces, leading increase in photocurrent and photoconductivity. This review represents comprehensive discussion on recent developments in such PDs functionalized by 2D materials, highlighting charge transfer mechanism at their interface. This review thoroughly explains the mechanism behind the enhanced performance of quantum materials across a spectrum of figure of merits including external quantum efficiency, detectivity, spectral responsivity, optical gain, response time, and noise equivalent power. The present review studies the intricate mechanisms that reinforce these improvements, shedding light on the intricacies of quantum materials and their significant capabilities. Moreover, a detailed analysis of the technical applicability of paper-based PDs has been discussed with challenges and future trends, providing comprehensive insights into their practical usage in the field of future wearable and portable electronic technologies.
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Affiliation(s)
- Monika Sharma
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University, (Central University), Tezpur 784028, India
| | - Nirmal Mazumder
- Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal, Karnataka 576104, India
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, United States of America
| | - Pritam Deb
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University, (Central University), Tezpur 784028, India
- Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal, Karnataka 576104, India
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2
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Caridad J, Castelló Ó, López Baptista SM, Taniguchi T, Watanabe K, Roskos HG, Delgado-Notario JA. Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-Layer Graphene Transistors. Nano Lett 2024; 24:935-942. [PMID: 38165655 PMCID: PMC10811671 DOI: 10.1021/acs.nanolett.3c04300] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Revised: 12/22/2023] [Accepted: 12/27/2023] [Indexed: 01/04/2024]
Abstract
Frequency-selective or even frequency-tunable terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control, and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for the frequency-selective detection of THz radiation. The exploitation of constructive interference of plasma waves in such detectors promises not only frequency selectivity but also a pronounced sensitivity enhancement at target frequencies. However, clear signatures of plasmon-assisted resonances in THz detectors have been revealed only at cryogenic temperatures so far and remain unobserved at application-relevant room-temperature conditions. In this work, we demonstrate the sought-after room-temperature resonant detection of THz radiation in short-channel gated photodetectors made from high-quality single-layer graphene. The survival of this intriguing resonant regime at room temperature ultimately relies on the weak intrinsic electron-phonon scattering in monolayer graphene, which avoids the damping of the plasma oscillations present in the device channel.
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Affiliation(s)
- José
M. Caridad
- Department
of Applied Physics, University of Salamanca, Salamanca 37008, Spain
- Unidad
de Excelencia en Luz y Materia Estructurada (LUMES), Universidad de Salamanca, Salamanca 37008, Spain
| | - Óscar Castelló
- Department
of Applied Physics, University of Salamanca, Salamanca 37008, Spain
- Unidad
de Excelencia en Luz y Materia Estructurada (LUMES), Universidad de Salamanca, Salamanca 37008, Spain
| | | | - Takashi Taniguchi
- Research
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Hartmut G. Roskos
- Physikalisches
Institut, Johann Wolfgang Goethe-Universität, Max-von-Laue-Str. 1, Frankfurt am Main D-60438, Germany
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3
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Meng Y, Jiang L, Zheng Y. Spin filters based on two-dimensional materials Co 2Si and Cu 2Si. J Phys Condens Matter 2023; 35:195001. [PMID: 36863029 DOI: 10.1088/1361-648x/acc0c0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Accepted: 03/02/2023] [Indexed: 02/17/2024]
Abstract
Spintronic devices have several advantages compared with conventional electronic devices, including non-volatility, faster data processing speed, higher integration densities, less electric power consumption and so on. However, we still face challenges for efficiently generating and injecting pure spin polarized current. In this work, we utilize two kinds of two-dimensional materials Co2Si and Cu2Si with both lattice match and band match to construct devices and then research their spin filter efficiency. The spin filter efficiency can be improved effectively either by an appropriate gate voltage at Co2Si region, or by series connection. In both cases the filter efficiencies are much larger than two-dimensional prepared Fe3GeTe2spin valve and ferromagnetic metallic chairlike O-graphene-H. Also at a quite small bias, we obtain a comparable spin polarized current as those obtained in Fe3GeTe2spin valve and O-graphene-H obtained at a much larger bias.
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Affiliation(s)
- Yexuan Meng
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Liwei Jiang
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Yisong Zheng
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China
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4
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Barraza-Lopez S, Naumis GG. Two-atom-thin topological crystalline insulators lacking out of plane inversion symmetry. J Phys Condens Matter 2022; 35:035502. [PMID: 36347047 DOI: 10.1088/1361-648x/aca135] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2022] [Accepted: 11/08/2022] [Indexed: 06/16/2023]
Abstract
A two-dimensional topological crystalline insulator (TCI) with a single unit cell (u.c.) thickness is demonstrated here. To that end, one first shows that tetragonal (C4in-plane) symmetry is not a necessary condition for the creation of zero-energy metallic surface states on TCI slabs of finite-thicknesses, because zero-energy states persist even as all the in-plane rotational symmetries-furnishing topological protection-are completely removed. In other words, zero-energy levels on the model are not due to (nor are they protected by) topology. Furthermore, effective two-fold energy degeneracies taking place at few discretek-points away from zero energy in the bulk Hamiltonian-that are topologically protected-persist at the u.c. thickness limit. The chiral nature of the bulk TCI Hamiltonian permits creating a2×2square Hamiltonian, whose topological properties remarkably hold invariant at both the bulk and at the single u.c. thickness limits. The identical topological characterization for bulk and u.c.-thick phases is further guaranteed by a calculation involving Pfaffians. This way, a two-atom-thick TCI is deployed hereby, in a demonstration of a topological phase that holds both in the bulk, and in two dimensions.
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Affiliation(s)
- Salvador Barraza-Lopez
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Gerardo G Naumis
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México, Mexico City 01000, Mexico
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5
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Lin Z, Guo J. Covalent Organic Frameworks for Photocatalytic Hydrogen Evolution: Design, Strategy and Structure-to-Performance Relationship. Macromol Rapid Commun 2022:e2200719. [PMID: 36222274 DOI: 10.1002/marc.202200719] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 09/23/2022] [Indexed: 11/08/2022]
Abstract
Photocatalysts are essential in photo-energy transduction systems, and their promising utilization for photocatalytic hydrogen evolution from water has been intensively studied for decades. Covalent organic frameworks (COFs) are emerging crystalline materials that are featured with highly ordered skeletons with intrinsic uniform pores, conferring a pre-designable platform for exploring novel photocatalysts. In this review, we delineate the rapid progress of two-dimensional (2D) COFs on visible photocatalytic H2 production from water. We summarize the design principles of building blocks, linkages, and reactions for constructing photocatalytic active 2D COFs with desirable electronic properties. We introduce different strategies for enhancing photocatalytic performances by extending π-conjugation, establishing donor-acceptor configuration, functionalizing layered structures, and incorporating heteroatoms or metal complexes. We detail the unique synergy between 2D COFs and various functional materials, such as inorganic/organic semiconductors, emphasizing on the structure-to-performance relationship. We further conclude with the current challenges and promising opportunities for developing COF-based photocatalysts. This article is protected by copyright. All rights reserved.
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Affiliation(s)
- Zheng Lin
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai, 200438, China
| | - Jia Guo
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai, 200438, China
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6
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Li H, Xiong X, Hui F, Yang D, Jiang J, Feng W, Han J, Duan J, Wang Z, Sun L. Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device. Nanotechnology 2022; 33:465601. [PMID: 35313295 DOI: 10.1088/1361-6528/ac5f96] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Accepted: 03/21/2022] [Indexed: 06/14/2023]
Abstract
Since the first successful exfoliation of graphene, the superior physical and chemical properties of two-dimensional (2D) materials, such as atomic thickness, strong in-plane bonding energy and weak inter-layer van der Waals (vdW) force have attracted wide attention. Meanwhile, there is a surge of interest in novel physics which is absent in bulk materials. Thus, vertical stacking of 2D materials could be critical to discover such physics and develop novel optoelectronic applications. Although vdW heterostructures have been grown by chemical vapor deposition, the available choices of materials for stacking is limited and the device yield is yet to be improved. Another approach to build vdW heterostructure relies on wet/dry transfer techniques like stacking Lego bricks. Although previous reviews have surveyed various wet transfer techniques, novel dry transfer techniques have been recently been demonstrated, featuring clean and sharp interfaces, which also gets rid of contamination, wrinkles, bubbles formed during wet transfer. This review summarizes the optimized dry transfer methods, which paves the way towards high-quality 2D material heterostructures with optimized interfaces. Such transfer techniques also lead to new physical phenomena while enable novel optoelectronic applications on artificial vdW heterostructures, which are discussed in the last part of this review.
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Affiliation(s)
- Huihan Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Dongliang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jinbao Jiang
- School of Microelectronic Science and Technology, Sun Yat-Sen University, Zhuhai, 519082, People's Republic of China
| | - Wanxiang Feng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junxi Duan
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
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7
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Huang L, Krasnok A, Alú A, Yu Y, Neshev D, Miroshnichenko AE. Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides. Rep Prog Phys 2022; 85:046401. [PMID: 34939940 DOI: 10.1088/1361-6633/ac45f9] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2021] [Accepted: 12/16/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.
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Affiliation(s)
- Lujun Huang
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
| | - Alex Krasnok
- Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, United States of America
| | - Andrea Alú
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, NY 10031, United States of America
- Physics Program, Graduate Center, City University of New York, New York, NY 10016, United States of America
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Dragomir Neshev
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Andrey E Miroshnichenko
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
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8
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Yang SJ, Jung JH, Lee E, Han E, Choi MY, Jung D, Choi S, Park JH, Oh D, Noh S, Kim KJ, Huang PY, Hwang CC, Kim CJ. Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals. Nano Lett 2022; 22:1518-1524. [PMID: 35119873 DOI: 10.1021/acs.nanolett.1c04139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Crystalline films offer various physical properties based on the modulation of their thicknesses and atomic structures. The layer-by-layer assembly of atomically thin crystals provides a powerful means to arbitrarily design films at the atomic level, which are unattainable with existing growth technologies. However, atomically clean assembly of the materials with high scalability and reproducibility remains challenging. We report programmed crystal assembly of graphene and monolayer hexagonal boron nitride, assisted by van der Waals interactions, to form wafer-scale films of pristine interfaces with near-unity yield. The atomic configurations of the films are tailored with layer-resolved compositions and in-plane crystalline orientations. We demonstrate batch-fabricated tunnel device arrays with modulation of the resistance over orders of magnitude by thickness control of the hexagonal boron nitride barrier with single-atom precision and large-scale, twisted multilayer graphene with programmable electronic band structures and crystal symmetries. Our results constitute an important development in the artificial design of large-scale films.
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Affiliation(s)
- Seong-Jun Yang
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Ju-Hyun Jung
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Eunsook Lee
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Edmund Han
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Min-Yeong Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Daesung Jung
- Convergence Research Center for Energy and Environmental Sciences, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea
| | - Shinyoung Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Jun-Ho Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Dongseok Oh
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Siwoo Noh
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Ki-Jeong Kim
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Pinshane Y Huang
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Chan-Cuk Hwang
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
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9
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Fan C, Liu Z, Yuan S, Meng X, An X, Jing Y, Sun C, Zhang Y, Zhang Z, Wang M, Zheng H, Li E. Enhanced Photodetection Performance of Photodetectors Based on Indium-Doped Tin Disulfide Few Layers. ACS Appl Mater Interfaces 2021; 13:35889-35896. [PMID: 34282897 DOI: 10.1021/acsami.1c06305] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two dimensional (2D) tin disulfide (SnS2) has attracted growing interest as a promising high performance photodetector with superior performance such as fast response time, high responsivity, and good stability. However, SnS2-based photodetectors still face great challenges, and the photodetection performance needs to be improved for practical applications. Herein, indium-doped SnS2 (In-SnS2) few layers were exfoliated from CVT-grown single crystals, which were synthesized by chemical vapor transport. Photodetectors based on In-SnS2 few layers were fabricated and detected. Compared with photodetectors based on pristine SnS2, photodetectors based on In-SnS2 few layers exhibited better photodetection performances, including higher responsivities, higher external quantum efficiencies, and greater normalized detectivities. The responsivity (R), external quantum efficiency (EQE), and normalized detectivity (D*) were increased by up to 2 orders of magnitude after In doping. Considering responsivity and response time, the photodetector based on 1.4 at. % In-SnS2 few layers exhibited an optimal photodetection performance with a high R of 153.8 A/W, a high EQE of 4.72 × 104 %, a great D* of 5.81 × 1012 Jones, and a short response time of 13 ms. Our work provides an efficient path to enhance photodetection performances of photodetectors based on SnS2 for future high-performance optoelectronic applications.
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Affiliation(s)
- Chao Fan
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications, Hangzhou 310027, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Zhe Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Shuo Yuan
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Xiancheng Meng
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Xia An
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Yongkai Jing
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Chun Sun
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Yonghui Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Zihui Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Mengjun Wang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications, Hangzhou 310027, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Hongxing Zheng
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
- Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
| | - Erping Li
- Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications, Hangzhou 310027, China
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10
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Park J, Lee J, Kim S, Hwang J. Graphene-Based Two-Dimensional Mesoporous Materials: Synthesis and Electrochemical Energy Storage Applications. Materials (Basel) 2021; 14:2597. [PMID: 34065776 PMCID: PMC8156551 DOI: 10.3390/ma14102597] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2021] [Revised: 05/10/2021] [Accepted: 05/14/2021] [Indexed: 02/06/2023]
Abstract
Graphene (G)-based two dimensional (2D) mesoporous materials combine the advantages of G, ultrathin 2D morphology, and mesoporous structures, greatly contributing to the improvement of power and energy densities of energy storage devices. Despite considerable research progress made in the past decade, a complete overview of G-based 2D mesoporous materials has not yet been provided. In this review, we summarize the synthesis strategies for G-based 2D mesoporous materials and their applications in supercapacitors (SCs) and lithium-ion batteries (LIBs). The general aspect of synthesis procedures and underlying mechanisms are discussed in detail. The structural and compositional advantages of G-based 2D mesoporous materials as electrodes for SCs and LIBs are highlighted. We provide our perspective on the opportunities and challenges for development of G-based 2D mesoporous materials. Therefore, we believe that this review will offer fruitful guidance for fabricating G-based 2D mesoporous materials as well as the other types of 2D heterostructures for electrochemical energy storage applications.
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Affiliation(s)
- Jongyoon Park
- Department of Energy Systems Research, Ajou University, 206 Worldcup-ro Yeongtong-gu, Suwon 16499, Korea; (J.P.); (J.L.)
| | - Jiyun Lee
- Department of Energy Systems Research, Ajou University, 206 Worldcup-ro Yeongtong-gu, Suwon 16499, Korea; (J.P.); (J.L.)
| | - Seongseop Kim
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Daejeon 34141, Korea;
| | - Jongkook Hwang
- Department of Chemical Engineering, Ajou University, Worldcupro 206, Suwon 16499, Korea
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11
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Wang R, Li H, Ge G, Dai N, Rao J, Ran H, Zhang Y. Montmorillonite-Based Two-Dimensional Nanocomposites: Preparation and Applications. Molecules 2021; 26:molecules26092521. [PMID: 33925944 PMCID: PMC8123415 DOI: 10.3390/molecules26092521] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2021] [Revised: 04/17/2021] [Accepted: 04/20/2021] [Indexed: 11/22/2022] Open
Abstract
Montmorillonite (Mt) is a kind of 2:1 type layered phyllosilicate mineral with nanoscale structure, large surface area, high cation exchange capacity and excellent adsorption capacity. By virtue of such unique properties, many scholars have paid much attention to the further modification of Mt-based two-dimensional (2D) functional composite materials, such as Mt-metal hydroxides and Mt-carbon composites. In this review, we focus on two typical Mt-2D nanocomposite: Mt@layered double hydroxide (Mt@LDH) and Mt@graphene (Mt@GR) and their fabrication strategies, as well as their important applications in pollution adsorption, medical antibacterial, film thermal conduction and flame-retardant. In principle, the prospective trend of the composite preparation of Mt-2D nancomposites and promising fields are well addressed.
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Affiliation(s)
- Runzhi Wang
- College of Environment and Ecology, Chongqing University, Chongqing 400044, China;
| | - Huijie Li
- College of Mechanical and Vehicle Engineering, Chongqing University, Chongqing 400044, China;
| | - Guangxu Ge
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China; (G.G.); (N.D.); (J.R.)
| | - Nan Dai
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China; (G.G.); (N.D.); (J.R.)
| | - Jinsong Rao
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China; (G.G.); (N.D.); (J.R.)
| | - Haodi Ran
- School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China;
| | - Yuxin Zhang
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China; (G.G.); (N.D.); (J.R.)
- Correspondence: ; Tel.: +86-2365104131
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12
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Cai Z, Lai Y, Zhao S, Zhang R, Tan J, Feng S, Zou J, Tang L, Lin J, Liu B, Cheng HM. Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides. Natl Sci Rev 2021; 8:nwaa115. [PMID: 34691588 PMCID: PMC8288458 DOI: 10.1093/nsr/nwaa115] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2020] [Revised: 04/20/2020] [Accepted: 05/18/2020] [Indexed: 12/24/2022] Open
Abstract
Two dimensional transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process. Here, we report a new growth approach called 'dissolution-precipitation' (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction. This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.
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Affiliation(s)
- Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yongjue Lai
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Shilong Zhao
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Jingyun Zou
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
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13
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Alsaif MMYA, Latham K, Field MR, Yao DD, Medhekar NV, Beane GA, Kaner RB, Russo SP, Ou JZ, Kalantar-zadeh K. Tunable plasmon resonances in two-dimensional molybdenum oxide nanoflakes. Adv Mater 2014; 26:3931-7. [PMID: 24677332 DOI: 10.1002/adma.201306097] [Citation(s) in RCA: 131] [Impact Index Per Article: 13.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2013] [Revised: 02/12/2014] [Indexed: 05/22/2023]
Affiliation(s)
- Manal M Y A Alsaif
- School of Electrical and Computer, Engineering, RMIT University, Melbourne, Victoria, Australia
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