Hot electron transfer from PbSe quantum dots molecularly bridged to mesoporous tin and titanium oxide films

Electron Transfer at Quantum Dot–Metal Oxide Interfaces for Solar Energy Conversion

Electron transfer at a donor–acceptor quantum dot–metal oxide interface is a process fundamentally relevant to solar energy conversion architectures as, e.g., sensitized solar cells and solar fuels schemes. As kinetic competition at these technologically relevant interfaces largely determines device performance, this Review surveys several aspects linking electron transfer dynamics and device efficiency; this correlation is done for systems aiming for efficiencies up to and above the ∼33% efficiency limit set by Shockley and Queisser for single gap devices. Furthermore, we critically comment on common pitfalls associated with the interpretation of kinetic data obtained from current methodologies and experimental approaches, and finally, we highlight works that, to our judgment, have contributed to a better understanding of the fundamentals governing electron transfer at quantum dot–metal oxide interfaces.

Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices

The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.

Chemisorption of Atomically Precise 42-Carbon Graphene Quantum Dots on Metal Oxide Films Greatly Accelerates Interfacial Electron Transfer

Graphene quantum dots (GQDs) are emerging as environmentally friendly, low-cost, and highly tunable building blocks in solar energy conversion architectures, such as solar (fuel) cells. Specifically, GQDs constitute a promising alternative for organometallic dyes in sensitized oxide systems. Current sensitized solar cells employing atomically precise GQDs are based on physisorbed sensitizers, with typically limited efficiencies. Chemisorption has been pointed out as a solution to boost photoconversion efficiencies, by allowing improved control over sensitizer surface coverage and sensitizer-oxide coupling strength. Here, employing time-resolved THz spectroscopy, we demonstrate that chemisorption of atomically precise C42-GQDs (hexa- peri-hexabenzocoronene derivatives consisting of 42 sp² carbon atoms) onto mesoporous metal oxides, enabled by their functionalization with a carboxylate group, enhances electron transfer (ET) rates by almost 2 orders of magnitude when compared with physisorbed sensitizers. Density functional theory (DFT) calculations, absorption spectroscopy and valence band X-ray photoelectron spectroscopy reveal that the enhanced ET rates can be traced to stronger donor-acceptor coupling strength enabled by chemisorption.

Efficient Hot Electron Transfer in Quantum Dot-Sensitized Mesoporous Oxides at Room Temperature

Hot carrier cooling processes represent one of the major efficiency losses in solar energy conversion. Losses associated with cooling can in principle be circumvented if hot carrier extraction toward selective contacts is faster than hot carrier cooling in the absorber (in so-called hot carrier solar cells). Previous work has demonstrated the possibility of hot electron extraction in quantum dot (QD)-sensitized systems, in particular, at low temperatures. Here we demonstrate a room-temperature hot electron transfer (HET) with up to unity quantum efficiency in strongly coupled PbS quantum dot-sensitized mesoporous SnO₂. We show that the HET efficiency is determined by a kinetic competition between HET rate ( K_HET) and the thermalization rate ( K_TH) in the dots. K_HET can be modulated by changing the excitation photon energy; K_TH can be modified through the lattice temperature. DFT calculations demonstrate that the HET rate and efficiency are primarily determined by the density of the state (DoS) of QD and oxide. Our results provide not only a new way to achieve efficient hot electron transfer at room temperature but also new insights on the mechanism of HET and the means to control it.

Dependence of hot electron transfer on surface coverage and adsorbate species at semiconductor–molecule interfaces

Developing a molecular-level understanding of how a hot electron transfer process can be enhanced at semiconductor–molecule interfaces is central to advancing various future technologies.

Electron Transfer from Bi-Isonicotinic Acid Emerges upon Photodegradation of N3-Sensitized TiO2 Electrodes

The long-term stability of dye-sensitized solar cells (DSSCs) is determined to a large extent by the photodegradation of their sensitizers. Understanding the mechanism of light-induced decomposition of dyes sensitizing a mesoporous oxide matrix may therefore contribute to solutions to increase the life span of DSSCs. Here, we investigate, using ultrafast terahertz photoconductivity measurements, the evolution of interfacial electron-transfer (ET) dynamics in Ru(4,4'-dicarboxylic acid-2,2'-bipyridine)₂(NCS)₂ (N3) dye-sensitized mesoporous TiO₂ electrodes upon dye photodegradation. Under inert environment, interfacial ET dynamics do not change over time, indicating that the dye is stable and photodegradation is absent; the associated ET dynamics are characterized by a sub-100 fs rise of the photoconductivity, followed by long-lived (≫1 ns) electrons in the oxide electrode. When the N3-TiO₂ sample is exposed to air under identical illumination conditions, dye photodegradation is evident from the disappearance of the optical absorption associated with the dye. Remarkably, approximately half of the sub-100 fs ET is observed to still occur but is followed by very rapid (∼10 ps) electron-hole recombination. Laser desorption/ionization mass spectrometry, attenuated total reflection-Fourier transform infrared, and terahertz photoconductivity analyses reveal that the photodegraded ET signal originates from the N3 dye photodegradation product as bi-isonicotinic acid (4,4'-dicarboxylic acid-2,2'-bipyridine), which remains bonded to the TiO₂ surface via either bidentate chelation or bridging-type geometry.

Boosting Biexciton Collection Efficiency at Quantum Dot-Oxide Interfaces by Hole Localization at the Quantum Dot Shell

Harvesting multiexcitons from semiconductor quantum dots (QDs) has been proposed as a path toward photovoltaic efficiencies beyond the Shockley-Queisser limit. Although multiexciton generation efficiencies have been quantified extensively in QD structures, the challenge of actually collecting multiple excitons at electrodes-a prerequisite for high-efficiency solar cell devices-has received less attention. Here, we demonstrate that multiexciton collection (MEC) at the PbS QD/mesoporous SnO₂ interface can be boosted 5-fold from ∼15 to reach ∼80% quantum yield, by partial localization of holes in a QD molecular capping shell. The resulting weakened Coulombic interactions give rise to reduced Auger recombination rates within the molecularly capped QDs, so that biexciton Auger relaxation, competing with MEC, is strongly suppressed. These results not only highlight the importance of surface chemistry and energetics at QD/ligand interfaces for multiexciton extraction but also provide clear design principles for realizing the benefits of MEG in sensitized systems exploited in solar cells and fuel geometries.

Dipolar Molecular Capping in Quantum Dot-Sensitized Oxides: Fermi Level Pinning Precludes Tuning Donor-Acceptor Energetics

Reducing the donor-acceptor excess energy (ΔG_ET) associated with electron transfer (ET) across quantum dot (QD)/oxide interfaces can boost photoconversion efficiencies in sensitized solar cell and fuel architectures. One proposed path for engineering ΔG_ET losses at interfaces refers to the tuning of sensitizer workfunction by exploiting QD dipolar molecular capping treatments. However, the change in workfunction per debye in QD solids has been reported to be ∼20-fold larger when compared to the effect achieved in QD-sensitized architectures. The origin behind the modest workfunction tunability in QD-sensitized oxides remains unclear. Here, we investigate the interplay between QD dipolar molecular capping, interfacial QD-oxide ET rates, and QD workfunction in PbS QD/SnO₂-sensitized interfaces. We find that interfacial QD-to-oxide ET is invariant to both the nature and strength of the specific QD dipolar capping treatment. Photoelectron spectroscopy reveals that the resolved invariance in ET rates is the result of a lack of QD workfunction (and hence ΔG_ET) tuning, despite effective molecular dipolar capping. We therefore conclude that Fermi level pinning precludes tuning donor-acceptor energetics by dipolar molecular capping in strongly coupled quantum dot-sensitized oxides.

Subpicosecond Photon-Energy-Dependent Hole Transfer from PbS Quantum Dots to Conjugated Polymers

We use transient absorption (TA) spectroscopy to study the origin of photon-energy dependent hole transfer yields in blends of PbS quantum dots with the conjugated polymer poly(3-hexylthiophene-2,5-diyl) (P3HT). We selectively excite only the quantum dots at two different wavelengths and measure the polymer ground state bleach resulting from the transfer of photoexcited holes. The higher photon-energy pump shows a greater prompt yield of hole transfer compared to the lower photon-energy excitation, on time scales sufficient to out-compete hot carrier cooling in lead chalcogenide quantum dots. We interpret the results as evidence that the excess energy of nonthermalized, or "hot," excitons resulting from higher photon-energy excitation allows more efficient charge transfer to the polymer in these systems. The data also demonstrate slow charge transfer rates, up to ∼1 ns, of the relaxed excitations on the PbS dots. These findings help to clarify the role of excess photon energy and carrier relaxation dynamics on free carrier generation in donor/acceptor solar cells.