Spin-filtering in graphene junctions with Ti and Co adsorbates

Doping Graphene with Substitutional Mn

We report the incorporation of substitutional Mn atoms in high-quality, epitaxial graphene on Cu(111), using ultralow-energy ion implantation. We characterize in detail the atomic structure of substitutional Mn in a single carbon vacancy and quantify its concentration. In particular, we are able to determine the position of substitutional Mn atoms with respect to the Moiré superstructure (i.e., local graphene-Cu stacking symmetry) and to the carbon sublattice; in the out-of-plane direction, substitutional Mn atoms are found to be slightly displaced toward the Cu surface, that is, effectively underneath the graphene layer. Regarding electronic properties, we show that graphene doped with substitutional Mn to a concentration of the order of 0.04%, with negligible structural disorder (other than the Mn substitution), retains the Dirac-like band structure of pristine graphene on Cu(111), making it an ideal system in which to study the interplay between local magnetic moments and Dirac electrons. Our work also establishes that ultralow-energy ion implantation is suited for substitutional magnetic doping of graphene. Given the flexibility, reproducibility, and scalability inherent to ion implantation, our work creates numerous opportunities for research on magnetic functionalization of graphene and other two-dimensional materials.

Organic Spintronics: A Theoretical Investigation of a Graphene-Porphyrin Based Nanodevice

Spintronics is one of the most exciting applications of graphene-based devices. In this work Density Functional Theory is used to study a nanojunction consisting of two semi-infinite graphene electrodes contacted with an iron-porphyrin (FeP) molecule, which plays the role of spin filter for the incoming unpolarized electrons. The graphene-FeP contact closely resembles the recently synthesized porphyrin-decorated graphene [He et al., Nat. Chem. 2017, 9, 33–38]. The analysis of the spectral properties of the system shows a variation of the orbital occupancy with respect to the isolated FeP molecule and an hybridization with the delocalized states of the substrate, while the overall magnetic moment remains unchanged. Doping the electrodes with boron or nitrogen atoms induces a relevant rearrangement in the electronic structure of the junction. Upon B doping the current becomes significantly spin polarized, while N doping induces a marked Negative Differential Resistivity effect. We have also investigated the possible exploitation of the FeP junction as a gas sensor device. We demonstrate that the interaction of CO and O2 molecules with the Fe atom, while being strong enough to be stable at room temperature (2.0 eV and 1.1 eV, respectively), induces only minor effects on the electronic properties of the junction. Interestingly, a quenching of the spin polarization of the current is observed in the B-doped system.

A Novel Single-Atom Electrocatalyst Ti1 /rGO for Efficient Cathodic Reduction in Hybrid Photovoltaics

Single-atom catalysts (SACs) are a frontier research topic in the catalysis community. Carbon materials decorated with atomically dispersed Ti are theoretically predicted with many attractive applications. However, such material has not been achieved so far. Herein, a Ti-based SAC, consisting of isolated Ti anchored by oxygen atoms on reduced graphene oxide (rGO) (termed as Ti₁ /rGO), is successfully synthesized. The structure of Ti₁ /rGO is characterized by high-angle annular dark-field scanning transmission electron microscopy and X-ray absorption fine structure spectroscopy, being determined to have a five coordinated local structure TiO₅ . When serving as non-Pt cathode material in dye-sensitized solar cells (DSCs), Ti₁ /rGO exhibits high electrocatalytic activity toward the tri-iodide reduction reaction. The power conversion efficiency of DSCs based on Ti₁ /rGO is comparable to that using conventional Pt cathode. The unique structure of TiO₅ moieties and the crucial role of atomically dispersed Ti in Ti₁ /rGO are well understood by experiments and density functional theory calculations. This emerging material shows potential applications in energy conversion and storage devices.

Magnetic Moments and Electron Transport through Chromium-Based Antiferromagnetic Nanojunctions

We report the electronic, magnetic and transport properties of a prototypical antiferromagnetic (AFM) spintronic device. We chose Cr as the active layer because it is the only room-temperature AFM elemental metal. We sandwiched Cr between two non-magnetic metals (Pt or Au) with large spin-orbit coupling. We also inserted a buffer layer of insulating MgO to mimic the structure and finite resistivity of a real device. We found that, while spin-orbit has a negligible effect on the current flowing through the device, the MgO layer plays a crucial role. Its effect is to decouple the Cr magnetic moment from Pt (or Au) and to develop an overall spin magnetization. We have also calculated the spin-polarized ballistic conductance of the device within the Büttiker⁻Landauer framework, and we have found that for small applied bias our Pt/Cr/MgO/Pt device presents a spin polarization of the current amounting to ≃25%.