A nonvolatile organic resistive switching memory based on lotus leaves

Neuromorphic Nanoionics for Human-Machine Interaction: From Materials to Applications

Human-machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion has extended into various emerging domains, including human healthcare, machine perception, and biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted in nanoionic devices that emulate the operations and architecture of the human brain, has emerged as a powerful tool for highly efficient information processing. This paper delivers a comprehensive review of recent developments in nanoionic device-based neuromorphic computing technologies and their pivotal role in shaping the next-generation of HMI. Through a detailed examination of fundamental mechanisms and behaviors, the paper explores the ability of nanoionic memristors and ion-gated transistors to emulate the intricate functions of neurons and synapses. Crucial performance metrics, such as reliability, energy efficiency, flexibility, and biocompatibility, are rigorously evaluated. Potential applications, challenges, and opportunities of using the neuromorphic computing technologies in emerging HMI technologies, are discussed and outlooked, shedding light on the fusion of humans with machines.

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology

Organic material-based bioelectronic nonvolatile memory devices have recently received a lot of attention due to their environmental compatibility, simple fabrication recipe, preferred scalability, low cost, low power consumption, and numerous additional advantages. Resistive random-access memory (RRAM) devices work on the principle of resistive switching, which has the potential for applications in memory storage and neuromorphic computing. Here, natural organically grown orange peel was used to extract biocompatible pectin to design a resistive switching-based memory device of the structure Ag/Pectin/Indium tin oxide (ITO), and the behavior was studied between a temperature range of 10K and 300K. The microscopic characterization revealed the texture of the surface and thickness of the layers. The memristive current-voltage characteristics performed over 1000 consecutive cycles of repeated switching revealed sustainable bipolar resistive switching behavior with a high ON/OFF ratio. The underlying principle of Resistive Switching behavior is based on the formation of conductive filaments between the electrodes, which is explained in this work. Further, we have also designed a 2 × 2 crossbar array of RRAM devices to demonstrate various logic circuit operations useful for neuromorphic computing. The robust switching characteristics suggest possible uses of such devices for the design of ecofriendly bioelectronic memory applications and in-memory computing.

Artificial Tactile Sensing Neuron with Tactile Sensing Ability Based on a Chitosan Memristor

Owing to the highly parallel network structure of the biological neural network and its triggered processing mode, tactile sensory neurons can realize the perception of external signals and the functions of perception, memory, and data processing by adjusting the synaptic weight. In this paper, a piezoresistive pressure sensor is combined with a memristor to design an artificial tactile sensory neuron. The polyurethane sponge sensor has excellent sensitivity and can convert physical stimuli into electrical signals, and the chitosan-based memristor has stable bipolar resistive switching characteristics, allowing further information to be memorized and processed. The neuron can respond to tactile stimuli of different degrees, durations, and frequencies; realize potentiation/depression modulation, paired-pulse facilitation, and spike-timing-dependent plasticity; exhibit spike-rate-dependent plasticity; and store and erase tactile information through memistor state switching, which has great application potential in biological sensing systems.

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Biocompatibility and transient nature of electronic devices have been the matter of attention in recent times due to their immense potential for sustainable solutions toward hazardous e-wastes. In order to fulfill the requirement of high-density data-storage devices due to explosive growth in digital data, a resistive switching (RS)-based memory device could be the promising alternative to the present Si-based electronics. In this research work, we employed a biocompatible enzymatic protein lysozyme (Lyso) as the active layer to design a RS memory device having a device structure Au/Lyso/ITO. Interestingly the device showed transient, WORM memory behavior. It has been observed that the WORM memory performance of the device was very good with high memory window (2.78 × 102), data retention (up to 300 min), device yield (∼73.8%), read cyclability, as well as very high device stability (experimentally >700 days, extrapolated to 3000 days). Bias-induced charge trapping followed by conducting filament formation was the key behind such switching behavior. Transient behavior analysis showed that electronic as well as optical behaviors completely disappeared after 10 s dissolution of the device in luke warm water. Cytotoxicity of the as-prepared device was tested by challenging two environmentally derived bacteria, S. aureus and P. aeruginosa, and was found to have no biocidal effects. Hence, the device would cause no harm to the microbial flora when it is discarded. As a whole, this work suggests that Lyso-based WORM memory device could play a key role for the design of transient WORM memory device for sustainable electronic applications.

Resistive switching properties of CdTe/CdSe core–shell quantum dots incorporated organic cow milk for memory application

Our study focuses on the resistive switching memory characteristics of devices containing active layers of CdTe/CdSe core–shell quantum dots (QDs) dispersed in organic cow milk. We fabricated devices containing CdTe/CdSe particles per volume of milk using a direct-dipping method, with particle concentrations of 2.4 × 10[Formula: see text] (S1), 4.8 × 10[Formula: see text](S2), and 7.2 × 10[Formula: see text](S3). This method was cost-free. Distinct memory characteristics were observed among devices featuring these concentrations. S1- and S2-based devices exhibited memory behavior with ‘S-type’ and ‘O-type’ hysteresis, respectively. The device based on S3 exhibited an initial asymmetric ‘N-type’ behavior with a large ON/OFF ratio ([Formula: see text]104). The memory attribute of the aforementioned device disappeared after the initial three cycles but was subsequently restored by modifying the scan voltage step from 10 mV to 1 mV. The observed results indicate typical symmetric ‘N-type’ behavior of the device, accompanied by threshold switching under positive voltage bias. Additionally, the switching was observed to be as low as 0.04 V. The S1- and S2-based devices were found to exhibit hopping conduction and Schottky emission in the OFF- and ON-state, respectively, while the S3-based device showed conductive bridge resistive switching as the conduction mechanism. The findings indicate that it is possible to produce biodegradable and disposable memory devices using full cream cow milk and CdTe/CdSe core–shell QDs. The device’s switching and memory functions can be manipulated by regulating the quantity of CdTe/CdSe particles present in the milk. Finally, we have demonstrated that the switching behavior of ReRAMs based on milk can be influenced by the voltage steps used during scanning.

Flexible Threshold-Type Switching Devices with Low Threshold and High Stability Based on Silkworm Hemolymph

In this paper, a floating-gate flexible nonvolatile memory is reported that is composed of natural biological materials, namely, silkworm hemolymph, graphene quantum dots as the floating-gate layer, and polymethyl methacrylate (PMMA) as the insulating layer. The device has a high ON/OFF current ratio (4.76 × 106), a low setting voltage (<−1.75 V), and good durability and retention ability. The device has two storage characteristics, namely, Flash and WORM, which can be effectively and accurately controlled by adjusting the limiting current during device setting. The resistance switching characteristics are the result of the formation and fracture of conductive filaments. The floating-gate flexible bioresistive random access memory prepared in this paper provides a new idea for the development of multifunctional and biocompatible flexible memory.

Applications of biomemristors in next generation wearable electronics

With the rapid development of mobile internet and artificial intelligence, wearable electronic devices have a great market prospect. In particular, information storage and processing of real-time collected data are an indispensable part of wearable electronic devices. Biomaterial-based memristive systems are suitable for storage and processing of the obtained information in wearable electronics due to the accompanying merits, i.e. sustainability, lightweight, degradability, low power consumption, flexibility and biocompatibility. So far, many biomaterial-based flexible and wearable memristive devices were prepared by spin coating or other technologies on a flexible substrate at room temperature. However, mechanical deformation caused by mechanical mismatch between devices and soft tissues leads to the instability of device performance. From the current research and practical application, the device will face great challenges when adapting to different working environments. In fact, some interesting studies have been performed to address the above issues while they were not intensively highlighted and overviewed. Herein, the progress in wearable biomemristive devices is reviewed, and the outlook and perspectives are provided in consideration of the existing challenges during the development of wearable biomemristive systems.

Natural-Casein-Based Biomemristor with Pinched Current-Voltage Characteristics

A biomaterials based memristor is of great interest for applications in the environment and human friendly electronic systems. Although a pinched current-voltage (I-V) characteristic is a signature of Chua's memristor model, biomemristors generally exhibit nonpinched I-V response. This work reports the discovery of the pinched I-V characteristics of a natural casein-based biomemristor. Water-soluble sodium caseinate (NaCas), synthesized using natural casein that was extracted from edible animal milk, was used for the fabrication of a Al/NaCas/ITO biomemristor device. In addition to pinched I-V characteristics, the Al/NaCas/ITO device shows improved performance with a sufficiently large resistance window (∼20 times), longer retention time (∼10⁵ s), and comparable cyclic endurance (>180 cycles), as compared with the reported biomemristors reported in the literature. A physical mechanism is proposed to explain the device characteristics.

Tunable biological nonvolatile multilevel data storage devices

The speed with which electronic products are updated is continuously increasing. Consequently, since waste electronic products can cause serious environmental pollution, the demand for electronic products made of biological materials is becoming increasingly urgent. Although biological memristors have significant advantages, their electrical characteristics still do not meet the requirements to be used in future nonvolatile memories. Therefore, how to control their electrical characteristics has become a popular topic of research. In this study, tunable biomemristors with an Al/tussah blood (TB)-carbon nanotube (CNT)/indium tin oxide (ITO)/glass structure were fabricated. Such a device exhibits stable bipolar resistance switching behavior and good retention characteristics (10⁴ s). Experimental results show that the ON/OFF current ratio can be effectively controlled by modifying the CNT concentration in the TB-CNT composite film. Multilevel (8 levels, 3 bits per cell) storage capabilities can be achieved in the device by controlling its compliance current in order to achieve high-density storage. The resistance switching behavior originates from the formation and rupture of conductive oxygen vacancy filaments. TB is a promising natural biomaterial in the field of green electronics, and this research could blaze a new trail for the development of biological memory devices. Biomemristors with multilevel resistance states can be used as electronic synapses and are one of the choices for simulating biological synapses.

Bioresistive Random-Access Memory with Gold Nanoparticles that Generate the Coulomb Blocking Effect Can Realize Multilevel Data Storage and Synapse Simulation

Gold nanoparticles (Au NPs) have good biocompatibility and special quantum effects. In this Letter, we embedded Au NPs into silkworm hemolymph (SH) to improve the performance of the device and fabricated Al/SH:Au NPs/indium tin oxide (ITO)/glass resistive random access memory. The device exhibits a bipolar switching behavior with a retention time of 10⁴ s. Compared with the Al/SH/ITO device without Au NPs, the device has a higher ON/OFF current ratio (>10⁵) and a smaller V_reset. The improvement in device performance is attributed to the fact that Au NPs act as the electron-trapping center in the device; a Coulomb blockade occurs after electrons are trapped, thereby increasing the resistance of the device in the high-resistance state. Using optimized devices can realize multilevel data storage and can also simulate synaptic characteristics such as potentiation and depression. The device is expected to be applied to high-density, low-cost, degradable, and biocompatible storage devices and neuromorphic computing in the future.

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

Nanocarbon materials have the advantages of biocompatibility, thermal stability and chemical stability and have shown excellent electrical properties in electronic devices. In this study, Al/MWCNT:GQD/ITO memristors with rewritable nonvolatile properties were prepared based on composites consisting of multiwalled carbon nanotubes (MWCNTs) and graphene quantum dots (GQDs). The switching current ratio of such a device can be tuned in two ways. Due to the ultraviolet light sensitivity of GQDs, when the dielectric material is illuminated by ultraviolet light, the charge capture ability of the GQDs decreases with an increasing duration of illumination, and the switching current ratio of the device also decreases with an increasing illumination duration (10³–10). By exploiting the charge capture characteristics of GQDs, the trap capture level can be increased by increasing the content of GQDs in the dielectric layer. The switching current ratio of the device increases with increasing GQD content (10–10³). The device can be programmed and erased more than 100 times; the programmable switching state can withstand 10⁵ read pulses, and the retention time is more than 10⁴ s. This memristor has a simple structure, low power consumption, and enormous application potential for data storage, artificial intelligence, image processing, artificial neural networks, and other applications.

Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device, it exhibits different resistance characteristics. When 1 mA is applied in the positive voltage range and 100 mA is applied in the negative voltage range, the device exhibits bipolar resistive switching behavior. Additionally, when 1 mA is applied in both the positive- and negative-voltage ranges, the device exhibits write-once-read-many-times (WORM) characteristics. The device has good endurance, with a retention time exceeding 10⁴ s. After 10⁴ bending cycles, the electrical characteristics remain constant. This memory device can be applied for “AND” and “OR” logic operations in programmable logic circuits. The prepared flexible and transparent biomemristor made of pure natural TH provides a promising new approach for realizing environmentally friendly and biocompatible flexible memory, nerve synapses, and wearable electronic devices.

Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept

Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for higher speed and denser non-volatile memories. In the case of green electronics, pectin has emerged as a suitable alternative to toxic metal oxides for resistive switching applications. Herein, a pectin-based thin film was fabricated on a fluorine-doped tin oxide glass substrate for RS mechanism. The presence of sp3-C groups with low binding energy corresponds to tunable charged defects and the oxygen vacancies confirmed by the O 1s spectra that plays a decisive role in the resistive switching mechanism, as revealed by X-ray photoemission spectroscopy (XPS). The surface morphology of the pectin film shows homogeneous growth and negligible surface roughness (38.98 ± 9.09). The pectin film can dissolve in DI water (10 minutes) owing to its ionization of carboxylic groups, that meet the trends of transient electronics. The developed Ag/pectin/FTO-based memory cell exhibits stable and reproducible bipolar resistive switching behavior along with an excellent ON/OFF ratio (104) and negligible electrical degradation was observed over 30 repeated cycles. Hence, it appears to be a valuable application for green electronics. Indeed, biocompatible storage devices derived from natural pectin are promising for high-density safe applications for information storage systems, flexible electronics, and green electronics.

Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen

We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio-memristors exhibit rewritable flash memory characteristics. Comparisons of ITO/GO/EA/GO/Al devices with 0.05 ωt %, 0.5 ωt %, and 2 ωt % GO in the GO layers and the ITO/EA/Al device show that the ON/OFF current ratio of these devices increases as the GO concentration decreases. Among these devices, the highest switching current ratio is 1.87 × 10³. Moreover, the RESET voltage decreases as the GO concentration decreases, which indicates that GO layers with different GO concentrations can be adopted to adjust the ON/OFF current ratio and the RESET voltage. When the GO concentration is 0.5 ωt %, the device can be switched more than 200 times. The retention times of all the devices are longer than 10⁴ s.

Flexible Neuromorphic Electronics for Computing, Soft Robotics, and Neuroprosthetics

Flexible neuromorphic electronics that emulate biological neuronal systems constitute a promising candidate for next-generation wearable computing, soft robotics, and neuroprosthetics. For realization, with the achievement of simple synaptic behaviors in a single device, the construction of artificial synapses with various functions of sensing and responding and integrated systems to mimic complicated computing, sensing, and responding in biological systems is a prerequisite. Artificial synapses that have learning ability can perceive and react to events in the real world; these abilities expand the neuromorphic applications toward health monitoring and cybernetic devices in the future Internet of Things. To demonstrate the flexible neuromorphic systems successfully, it is essential to develop artificial synapses and nerves replicating the functionalities of the biological counterparts and satisfying the requirements for constructing the elements and the integrated systems such as flexibility, low power consumption, high-density integration, and biocompatibility. Here, the progress of flexible neuromorphic electronics is addressed, from basic backgrounds including synaptic characteristics, device structures, and mechanisms of artificial synapses and nerves, to applications for computing, soft robotics, and neuroprosthetics. Finally, future research directions toward wearable artificial neuromorphic systems are suggested for this emerging area.

Resistive switching of silicon-silver thin film devices in flexible substrates

Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal-insulator-metal structure was fabricated and characterized on top of flexible substrates using a straightforward microfabrication process. We also showed that these substrates are compatible with sputtering deposition. RS was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both flat and bent (under a radius of 3.5 mm) configurations. The observed phenomenon was explained by the formation/rupture of metallic Ag filaments in the otherwise insulating Si host layer.