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Al Bouzieh N, Sattar MA, Benkraouda M, Amrane N. A Comparative Study of Electronic, Optical, and Thermoelectric Properties of Zn-Doped Bulk and Monolayer SnSe Using Ab Initio Calculations. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2084. [PMID: 37513095 PMCID: PMC10383460 DOI: 10.3390/nano13142084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Revised: 06/11/2023] [Accepted: 06/25/2023] [Indexed: 07/30/2023]
Abstract
In this study, we explore the effects of Zn doping on the electronic, optical, and thermoelectric properties of α-SnSe in bulk and monolayer forms, employing density functional theory calculations. By varying the doping concentrations, we aim to understand the characteristics of Zn-doped SnSe in both systems. Our analysis of the electronic band structure using (PBE), (SCAN), and (HSE06) functionals reveals that all doped systems exhibit semiconductor-like behavior, making them suitable for applications in optoelectronics and photovoltaics. Notably, the conduction bands in SnSe monolayers undergo changes depending on the Zn concentration. Furthermore, the optical analysis indicates a decrease in the dielectric constant when transitioning from bulk to monolayer forms, which is advantageous for capacitor production. Moreover, heavily doped SnSe monolayers hold promise for deep ultraviolet applications. Examining the thermoelectric transport properties, we observe that Zn doping enhances the electrical conductivity in bulk SnSe at temperatures below 500 K. However, the electronic thermal conductivity of monolayer samples is lower compared to bulk samples, and it decreases consistently with increasing Zn concentrations. Additionally, the Zn-doped 2D samples exhibit high Seebeck coefficients across most of the temperature ranges investigated.
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Affiliation(s)
- Najwa Al Bouzieh
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| | - Muhammad Atif Sattar
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
- National Water and Energy Center (NWEC), United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| | - Maamar Benkraouda
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| | - Noureddine Amrane
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
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Guo G, Liu J, Xu Y, Guo G, Tan S. Chemical functionalization induced photocatalytic performance for water splitting of silicene: A first-principles investigation. Colloids Surf A Physicochem Eng Asp 2023. [DOI: 10.1016/j.colsurfa.2023.131379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/05/2023]
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Guo G, Tan S, Guo G, Xie Z. Strain-enhanced properties of Janus Si2PAs monolayer as a promising photocatalyst for the splitting of water: Insights from first-principles calculations. Colloids Surf A Physicochem Eng Asp 2023. [DOI: 10.1016/j.colsurfa.2022.130782] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
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Zhang L, Li X, Chen K, Zhang Z, Li Y, Lu Y, Chen X, Yang D, Shan C. Revealing the Anisotropic Structural and Electrical Stabilities of 2D SnSe under Harsh Environments: Alkaline Environment and Mechanical Strain. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9824-9832. [PMID: 35143168 DOI: 10.1021/acsami.1c22963] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
As a promising thermoelectric and semiconducting material, the stability of two-dimensional tin selenide (SnSe) under harsh environments is significant for its practical applications. Here, focusing on the key procedures in the device fabrication process, we report the anisotropic structural and electrical stabilities of SnSe under an alkaline environment and mechanical strain. Due to the anisotropic mechanical properties, the SnSe flakes can naturally form long-straight {011} edge planes during the mechanical exfoliation process. Such a cleavage tendency provides an effective crystal orientation identification method to uncover the orientation-dependent properties. We find that the single-crystalline SnSe flakes experience an anisotropic degradation process with the preferable {011} dissolution planes in the alkaline environment and can be gradually transformed to be polycrystalline consisting of SnSe2, Sn, and Se nanocrystals. SnSe flakes present an anisotropic electromechanical response with a gauge factor value that reaches ∼-460 under the uniaxial strain along the ⟨011⟩ directions. Our revealed structural and electrical stability of SnSe under harsh environments can provide guidance for the device design, fabrication, and performance evaluation.
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Affiliation(s)
- Leilei Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xing Li
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Kaijian Chen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Zhenfeng Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yizhe Li
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yacong Lu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xuexia Chen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Dongwen Yang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Tuning the electronic and optical properties of CuCl with different layers using DFT calculations. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.138818] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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Mozvashi SM, Mohebpour MA, Vishkayi SI, Tagani MB. Mechanical strength and flexibility in [Formula: see text]-4H borophene. Sci Rep 2021; 11:7547. [PMID: 33824388 PMCID: PMC8024380 DOI: 10.1038/s41598-021-87246-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2020] [Accepted: 03/22/2021] [Indexed: 02/01/2023] Open
Abstract
Very recently, a novel phase of hydrogenated borophene, namely [Formula: see text]-4H, has been synthesized in a free-standing form. Unlike pure borophenes, this phase shows very good stability in the air environment and possesses semiconducting characteristics. Because of the interesting stiffness and flexibility of borophenes, herein, we systematically studied the mechanical properties of this novel hydrogenated phase. Our results show that the monolayer is stiffer (Y[Formula: see text] = [Formula: see text]195 N/m) than group IV and V 2D materials and even than MoS[Formula: see text], while it is softer than graphene. Moreover, similar to other phases of borophene, the inherent anisotropy of the pure monolayer increases with hydrogenation. The monolayer can bear biaxial, armchair, and zigzag strains up to 16, 10, and 14% with ideal strengths of approximately 14, 9, and 12 N/m, respectively. More interestingly, it can remain semiconductor under this range of tension. These outstanding results suggest that the [Formula: see text]-4H is a promising candidate for flexible nanoelectronics.
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Affiliation(s)
- Shobair Mohammadi Mozvashi
- Computational Nanophysics Laboratory (CNL), Department of Physics, University of Guilan, P. O. Box 41335-1914, Rasht, Iran
| | - Mohammad Ali Mohebpour
- Computational Nanophysics Laboratory (CNL), Department of Physics, University of Guilan, P. O. Box 41335-1914, Rasht, Iran
| | - Sahar Izadi Vishkayi
- School of Physics, Institute for Research in Fundamental Sciences (IPM), P. O. Box 19395-5531, Tehran, Iran
| | - Meysam Bagheri Tagani
- Computational Nanophysics Laboratory (CNL), Department of Physics, University of Guilan, P. O. Box 41335-1914, Rasht, Iran
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Li N, Fan J. Computational insights into modulating the performance of MXene based electrode materials for rechargeable batteries. NANOTECHNOLOGY 2021; 32:252001. [PMID: 33636713 DOI: 10.1088/1361-6528/abea37] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Accepted: 02/26/2021] [Indexed: 06/12/2023]
Abstract
MXene, a still-growing large family of two-dimensional (2D) materials, has aroused enormous attention in the scientific community. Owing to their high specific surface area, good electronic conductivity, stability, and hydrophilicity, MXene has found a wide application involving electromagnetic interference shielding, sensors, catalysis, and energy storage, etc. In the field of energy storage, MXenes are promising electrode materials for various metal-ion batteries and they are also effective anchoring materials for Li-S batteries. One of the most unique features of MXene is its abundant compositions, which renders us large room to modulate its properties. Besides, other effective approaches applicable to traditional 2D materials can also be used to optimize the performance of MXene. Theoretical calculations have played a significant role in predicting and screening high-performance MXene based electrode materials. So far, theoretical researchers have made much progress in optimizing the performance of MXene as electrode materials for various rechargeable batteries. In the present review, started by a brief introduction of the involved mechanism and basic calculation methods, we comprehensively overview the latest theoretical studies of modulating the performance of MXene based electrode materials for rechargeable batteries.
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Affiliation(s)
- Na Li
- Department of Materials Science & Engineering, City University of Hong Kong, Hong Kong, People's Republic of China
| | - Jun Fan
- Department of Materials Science & Engineering, City University of Hong Kong, Hong Kong, People's Republic of China
- Center for Advance Nuclear Safety and Sustainable Development, City University of Hong Kong, Hong Kong, People's Republic of China
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Vu TV, Lavrentyev A, Gabrelian B, Vo DD, Sabov V, Sabov M, Barchiy I, Piasecki M, Khyzhun O. Highly anisotropic layered selenophosphate AgSbP2Se6: The electronic structure and optical properties by experimental measurements and first-principles calculations. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2020.110813] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
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Hoat D, Tarawneh OH, Alsariera YA, Salehi K, Ezzeldien M, Naseri M. Strain tunable electronic and optical properties of 2D orthorhombic lithium sulfur monolayer. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2020.110762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Li F, Shen T, Wang C, Zhang Y, Qi J, Zhang H. Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics. NANO-MICRO LETTERS 2020; 12:106. [PMID: 34138113 PMCID: PMC7770727 DOI: 10.1007/s40820-020-00439-9] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2020] [Accepted: 03/20/2020] [Indexed: 05/07/2023]
Abstract
The development of two-dimensional (2D) semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness, unique structure, excellent optoelectronic properties and novel physics. The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic-electric performance. The strain-engineered one-dimensional materials have been well investigated, while there is a long way to go for 2D semiconductors. In this review, starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain, following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors, such as Janus 2D and 2D-Xene structures. Moreover, recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized. Furthermore, the applications of strain-engineered 2D semiconductors in sensors, photodetectors and nanogenerators are also highlighted. At last, we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.
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Affiliation(s)
- Feng Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Tao Shen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Cong Wang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China.
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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Stacking impact on the optical and electronic properties of two-dimensional MoSe2/PtS2 heterostructures formed by PtS2 and MoSe2 monolayers. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2020.110679] [Citation(s) in RCA: 45] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Zhou J, Wu Y, Wang H, Wu Z, Li X, Yang W, Ke C, Lu S, Zhang C, Kang J. Strain manipulation of the polarized optical response in two-dimensional GaSe layers. NANOSCALE 2020; 12:4069-4076. [PMID: 32022060 DOI: 10.1039/c9nr09057f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report tunable optical performances of gallium selenide (GaSe) layers in phonon vibrations, band edge emission, circular polarization, and anisotropic response via strain manipulation. By applying a uniaxial tensile strain, frequency shift and peak broadening are observed in Raman spectra. A shrink in bandgap is demonstrated in photoluminescence (PL) spectra and confirmed by first-principles calculations. A continuously growing circular polarization from 3.8% to 37.9% is detected at room temperature when the tensile strain is increased from 0% to 0.35%, which is almost a ten-fold enhancement compared with that under the non-resonant excitation. Through the theoretical calculations, the decrease in exciton lifetime is revealed to be responsible for the overwhelming enhanced circular polarization. By deforing the lattices of GaSe layers, the Raman intensity was found to be suppressed in the strain direction. The intrinsic fourfold-symmetry of the E2g1 mode in angle-dependent Raman spectra is tuned to a two-fold symmetry. An anisotropic PL response is further regulated by changing the structural symmetry of GaSe lattices. A maximal polarization of 66.0% is achieved when the detection polarizations are perpendicular to the strain direction. All the findings in this study suggest a route for tuning the optical properties, particularly the polarized response in two-dimensional (2D) materials, and provide a strategy for developing flexible and anisotropic 2D optical devices.
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Affiliation(s)
- Jiangpeng Zhou
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Insititute, Xiamen University, Xiamen, 361005, P. R. China.
| | - Yaping Wu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Insititute, Xiamen University, Xiamen, 361005, P. R. China.
| | - Hao Wang
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Insititute, Xiamen University, Xiamen, 361005, P. R. China.
| | - Zhiming Wu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Insititute, Xiamen University, Xiamen, 361005, P. R. China.
| | - Xu Li
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Insititute, Xiamen University, Xiamen, 361005, P. R. China.
| | - Weihuang Yang
- Key Laboratory of RF Circuits and System of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
| | - Congming Ke
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Insititute, Xiamen University, Xiamen, 361005, P. R. China.
| | - Shiqiang Lu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Insititute, Xiamen University, Xiamen, 361005, P. R. China.
| | - Chunmiao Zhang
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Insititute, Xiamen University, Xiamen, 361005, P. R. China.
| | - Junyong Kang
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Insititute, Xiamen University, Xiamen, 361005, P. R. China.
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Nguyen HT, Vu TV, Binh NT, Hoat D, Hieu NV, Anh NT, Nguyen CV, Phuc HV, Jappor HR, Obeid MM, Hieu NN. Strain-tunable electronic and optical properties of monolayer GeSe: Promising for photocatalytic water splitting applications. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2019.110543] [Citation(s) in RCA: 37] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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