First-principles calculations on the role of CN precursors for the formation of fullerene-like carbon nitride

Growth of Low-Defect Nitrogen-Doped Graphene Film Using Condensation-Assisted Chemical Vapor Deposition Method

It is significantly important to modulate the electrical properties of graphene films through doping for building desired electronic devices. One of the effective doping methods is the chemical vapor deposition (CVD) of graphene films with heteroatom doping during the process, but this usually results in nitrogen-doped graphene with low doping levels, high defect density, and low carrier mobility. In this work, we developed a novel condensation-assisted CVD method for the synthesis of high-quality nitrogen-doped graphene (NG) films at low temperatures of 400 °C using solid 3,4,5-trichloropyridine as a carbon and nitrogen source. The condensation system was employed to reduce the volatilization of the solid source during the non-growth stage, which leads to a great improvement of quality of as-prepared NG films. Compared to the one synthesized using conventional CVD methods, the NG films synthesized using condensation-assisted CVD present extremely low defects with a ratio of from D- to G-peak intensity (I_D/I_G) in the Raman spectrum lower than 0.35. The corresponding total N content, graphitic nitrogen/total nitrogen ratio, and carrier mobility reach 3.2 at%, 67%, and 727 cm²V^-1S^-1, respectively. This improved condensation-assisted CVD method provides a facile and well-controlled approach for fabricating high-quality NG films, which would be very useful for building electronic devices with high electrical performance.

Effect of the Dopant Configuration on the Electronic Transport Properties of Nitrogen-Doped Carbon Nanotubes

Nitrogen-doped carbon nanotubes (N-CNTs) show promise in several applications related to catalysis and electrochemistry. In particular, N-CNTs with a single nitrogen dopant in the unit cell have been extensively studied computationally, but the structure-property correlations between the relative positions of several nitrogen dopants and the electronic transport properties of N-CNTs have not been systematically investigated with accurate hybrid density functional methods. We use hybrid density functional theory and semiclassical Boltzmann transport theory to systematically investigate the effect of different substitutional nitrogen doping configurations on the electrical conductivity of N-CNTs. Our results indicate significant variation in the electrical conductivity and the relative energies of the different dopant configurations. The findings can be utilized in the optimization of electrical transport properties of N-CNTs.

Electronic, optical, mechanical, and thermal properties of diphenylacetylene-based graphyne nanosheet using density functional theory

In this paper, the structural stability, electronic, optical, mechanical, and thermal properties of diphenylacetylene-based graphyne (DPAG) nanosheet are investigated using first-principle calculations based on density functional theory (DFT). The absolute value of the calculated cohesive energy reveals that DPAG nanosheet is a structurally stable two-dimensional material. Also, in the results of phononic dispersion curves, the absence of imaginary frequencies confirms the dynamic stability of this novel material. In addition, the theoretical electronic band structure and density of states reveal the semiconducting nature of DPAG nanosheet. The optical analysis shows that the first absorption peaks of the imaginary and real parts of dielectric constants along the in-plane and out-of-plane polarizations of DPAG monolayer occur in the visible range of the electromagnetic spectrum. On the other hand, the DPAG nanosheet exhibits orthotropic elastic behavior with four independent constants comparable with the data of similar materials available in the literature. Moreover, DFT calculations of the lattice thermal conductivity of DPAG reveals an anomalously very low thermal conductivity of this nanosheet showing its perfect thermal non-conductivity. Our results provide deep insights into the potential applications of DPAG nanosheet for the design of new optoelectronic/nanoelectronic devices.

The influence of Stone-Wales defects in nanographene on the performance of Na-ion batteries

The effect of the Stone-Wales (SW) defect on the energetic, structural, electronic properties of Na/Na⁺ adsorption on the Hexa-peri-hexabenzocoronene (HBC) nanographene is investigated using density functional theory calculations. We showed that two kinds of SW defects can be generated in the structure of HBC, and the defected sheets are less stable than the intrinsic HBC by about 63.2-65.3 kcal/mol. The heptagonal ring of SW defect is the most favorable site for the Na and Na⁺ adsorption and the adsorption energies increase from -0.8 and -33.2 kcal/mol on the intrinsic HBC to -16.7 and -39.3 kcal/mol on the SW-HBC, respectively. The predicted energy barrier for an Na atom to move from a heptagonal ring to another one in the SW-HBC is about 4.9 kcal/mol, indicating a high ion mobility compared to the pristine HBC. The SW defect increases the Na diffusion coefficient from 3.46 × 10^-11 to 2.83 × 10^-6 cm²/s. Although the SW defect increases the ion mobility, it has an undesirable effect on the cell voltage, if a HBC nanographene is used in the anode of Na-ion batteries.

A computational study on the BN-yne sheet application in the Na-ion batteries

Although Li-ion batteries are extensively applied, short lifetime, high cost, and safety problems limit their application. Na-ion batteries (NIB) might be an alternative to the Li-ion owing to wide availability, low cost, and nontoxicity of Na. Here, we performed density functional theory calculations to investigate the possible application of a graphyne-like BN layer (BN-yne) in the anode of NIBs. The adsorption energies of Na and Na⁺ on the BN-yne are predicted to be -15.3 and -54.6 kcal/mol, respectively. It was found that the maximum barrier energy for migration of Na atom and Na⁺ ion through BN-yne surface is about 20.2 and 16.5 kcal/mol, respectively. The calculated cell voltage for the BN-yne are predicted to be and 1.70 V. Using an electric field of -0.02 a. u. much more strengthens the interaction of Na⁺ with the BN-yne compared to the Na atom, increasing the cell voltage of NIB to 2.10 eV. We showed that a high Na storage capacity (Na₄B₂N₂), high cell voltage and diffusion ability of BN-yne make it a promising candidate for the NIB anode material.

Stabilities and novel electronic structures of three carbon nitride bilayers

We predict three novel phases of the carbon nitride (CN) bilayer, denoted α-C2N2, β-C2N2 and γ-C4N4, respectively. All of them consist of two CN sheets connected by C-C covalent bonds. The phonon dispersions reveal that all these phases are dynamically stable, because no imaginary frequency is present. The transition pathway between α-C2N2 and β-C2N2 is investigated, which involves bond-breaking and bond-reforming between C and N. This conversion is difficult, since the activation energy barrier is 1.90 eV per unit cell, high enough to prevent the transformation at room temperature. Electronic structure calculations show that all three phases are semiconductors with indirect band gaps of 3.76/5.22 eV, 4.23/5.75 eV and 2.06/3.53 eV, respectively, by PBE/HSE calculation. The β-C2N2 has the widest band gap among the three phases. All three bilayers can become metallic under tensile strain, and the indirect gap of γ-C4N4 can turn into a direct one. γ-C4N4 can become an anisotropic Dirac semimetal under uniaxial tensile strain. Anisotropic Dirac cones with high Fermi velocity of the order of 105 m/s appear under 12% strain. Our results suggest that the three two-dimensional materials have potential applications in electronics, semiconductors, optics and spintronics.

Computational study of precision nitrogen doping on graphene nanoribbon edges

Nitrogen doping in graphene is important for applications spanning from electronics to metal-free electrocatalysts. Despite much experimental study, limited theoretic work has been done in understanding the mechanism of the doping process, especially from a precision perspective. Herein, we present a computational study on precision nitrogen doping on edges of graphene nanoribbons (GNRs) by combining molecular dynamics (MD) simulation at a time scale of 40 ns and density function theory (DFT) calculation. In the MD study both ammonia and acetonitrile were used as nitrogen sources. MD results revealed that the ammonia produces almost all amine-type dopants, while the acetonitrile produces a considerable amount of pyrrolic and pyridinic nitrogen dopants which are beneficial to electronics and electrocatalysts. Results also show that the concentration of pyrrolic and pyridinic dopants can be precisely controlled by the edge geometries of the GNRs. Furthermore, DFT calculation illustrated the reaction mechanism in these different types of the GNRs when using acetonitrile as the nitrogen source. The calculated energies in different reaction stages indicate the stability of dopants on various GNRs, agreeing well with the MD results. The disclosed mechanism of controllable nitrogen doping on the edges of the GNRs would provide guidance to experimental realization, paving new routes to widespread applications.

Two B-C-O Compounds: Structural, Mechanical Anisotropy and Electronic Properties under Pressure

The structural, stability, mechanical, elastic anisotropy and electronic properties of two ternary light element compounds, B₂CO₂ and B₆C₂O₅, are systematically investigated. The elastic constants and phonon calculations reveal that B₂CO₂ and B₆C₂O₅ are both mechanically and dynamically stable at ambient pressure, and they can stably exist to a pressure of 20 GPa. Additionally, it is found that B₂CO₂ and B₆C₂O₅ are wide-gap semiconductor materials with indirect energy gaps of 5.66 and 5.24 eV, respectively. The hardness calculations using the Lyakhov-Oganov model show that B₂CO₂ is a potential superhard material. Furthermore, the hardness of B₆C₂O₅ is 29.6 GPa, which is relatively softer and more easily machinable compared to the B₂CO₂ (41.7 GPa). The elastic anisotropy results show that B₆C₂O₅ exhibits a greater anisotropy in the shear modulus, while B₂CO₂ exhibits a greater anisotropy in Young's modulus at ambient pressure.

Selective detection of cyanogen halides by BN nanocluster: a DFT study

The electronic sensitivity and adsorption behavior toward cyanogen halides (X–CN; X = F, Cl, and Br) of a B₁₂N₁₂ nanocluster were investigated by means of density functional theory calculations. The X-head of these molecules was predicted to interact weakly with the BN cluster because of the positive σ-hole on the electronic potential surface of halogens. The X–CN molecules interact somewhat strongly with the boron atoms of the cluster via the N-head, which is accompanied by a large charge transfer from the X–CN to the cluster. The change in enthalpy upon the adsorption process (at room temperature and 1 atm) is about −19.2, −23.4, and −30.5 kJ mol⁻¹ for X = F, Cl, and Br, respectively. The LUMO level of the BN cluster is largely stabilized after the adsorption process, and the HOMO–LUMO gap is significantly decreased. Thus, the electrical conductivity of the cluster is increased, and an electrical signal is generated that can help to detect these molecules. By increasing the atomic number of X, the signal will increase, which makes the sensor selective for cyanogen halides. Also, it was indicated that the B₁₂N₁₂ nanocluster benefits from a short recovery time as a sensor.

Na-ion batteries based on the inorganic BN nanocluster anodes: DFT studies

It has been recently indicated that the Li-ion batteries may be replaced by Na-ion batteries because of their low safety, high cost, and low-temperature performance, and lack of the Li mineral reserves. Here, using density functional theory calculations, we studied the potential application of B₁₂N₁₂ nanoclusters as anode in Na-ion batteries. Our calculations indicate that the adsorption energy of Na⁺ and Na are about -23.4 and -1.4kcal/mol, respectively, and the pristine BN cage to improve suffers from a low cell voltage (∼0.92V) as an anode in Na-ion batteries. We presented a strategy to increase the cell voltage and performance of Na-ion batteries. We showed that encapsulation of different halides (X=F^-, Cl^-, or Br^-) into BN cage significantly increases the cell voltage. By increasing the atomic number of X, the Gibbs free energy change of cell becomes more negative and the cell voltage is increased up to 3.93V. The results are discussed based on the structural, energetic, frontier molecular orbital, charge transfer and electronic properties and compared with the performance of other nanostructured anodes.

Two isomeric solid carbon nitrides with 1 : 1 stoichiometry which exhibit strong mechanical anisotropy

Two isomeric layered carbon nitride polymorphs are characterized using reliable theoretical methods. The NCNC phase, which is predicted for the first time, has a number of differences with the isomeric NCCN polymorph in its electronic, spectral and mechanical properties.

Two Novel C₃N₄ Phases: Structural, Mechanical and Electronic Properties

We systematically studied the physical properties of a novel superhard (t-C₃N₄) and a novel hard (m-C₃N₄) C₃N₄ allotrope. Detailed theoretical studies of the structural properties, elastic properties, density of states, and mechanical properties of these two C₃N₄ phases were carried out using first-principles calculations. The calculated elastic constants and the hardness revealed that t-C₃N₄ is ultra-incompressible and superhard, with a high bulk modulus of 375 GPa and a high hardness of 80 GPa. m-C₃N₄ and t-C₃N₄ both exhibit large anisotropy with respect to Poisson’s ratio, shear modulus, and Young’s modulus. Moreover, m-C₃N₄ is a quasi-direct-bandgap semiconductor, with a band gap of 4.522 eV, and t-C₃N₄ is also a quasi-direct-band-gap semiconductor, with a band gap of 4.210 eV, with the HSE06 functional.

Two-Dimensional Phosphorus Carbide: Competition between sp(2) and sp(3) Bonding

We propose previously unknown allotropes of phosphorus carbide (PC) in the stable shape of an atomically thin layer. Different stable geometries, which result from the competition between sp(2) bonding found in graphitic C and sp(3) bonding found in black P, may be mapped onto 2D tiling patterns that simplify categorizing of the structures. Depending on the category, we identify 2D-PC structures that can be metallic, semimetallic with an anisotropic Dirac cone, or direct-gap semiconductors with their gap tunable by in-layer strain.