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Shi T, Zhang Z, Guo X, Liu Z, Wang C, Huang S, Jia T, Quan C, Xiong Q, Zhang M, Du J, Leng Y. Ultrafast Charge Generation Enhancement in Nanoscale Polymer Solar Cells with DIO Additive. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E2174. [PMID: 33143281 PMCID: PMC7692121 DOI: 10.3390/nano10112174] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Revised: 10/28/2020] [Accepted: 10/29/2020] [Indexed: 12/14/2022]
Abstract
We study the ultrafast photoexcitation dynamics in PBDTTT-C-T (P51, poly(4,8-bis(5-(2-ethylhexyl)-thiophene-2-yl)-benzo[1,2-b:4,5-b']dithiophene-alt-alkylcarbonyl-thieno[3,4-b]thiophene)) film (~100 nm thickness) and PBDTTT-C-T:PC71BM (P51:PC71BM, phenyl-C71-butyric-acid-methyl ester) nanostructured blend (∼100 nm thickness) with/without DIO(1,8-diiodooctane) additives with sub-10 fs transient absorption (TA). It is revealed that hot-exciton dissociation and vibrational relaxation could occur in P51 with a lifetime of ~160 fs and was hardly affected by DIO. However, the introduction of DIO in P51 brings a longer lifetime of polaron pairs, which could make a contribution to photocarrier generation. In P51:PC71BM nanostructured blends, DIO could promote the Charge Transfer (CT) excitons and free charges generation with a ~5% increasement in ~100 fs. Moreover, the dissociation of CT excitons is faster with DIO, showing a ~5% growth within 1 ps. The promotion of CT excitons and free charge generation by DIO additive is closely related with active layer nanomorphology, accounting for Jsc enhancement. These results reveal the effect of DIO on carrier generation and separation, providing an effective route to improve the efficiency of nanoscale polymer solar cells.
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Affiliation(s)
- Tongchao Shi
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zeyu Zhang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Xia Guo
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China; (X.G.); (M.Z.)
| | - Zhengzheng Liu
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Chunwei Wang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
| | - Sihao Huang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tingyuan Jia
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chenjing Quan
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qian Xiong
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
| | - Maojie Zhang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China; (X.G.); (M.Z.)
| | - Juan Du
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Yuxin Leng
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; (T.S.); (Z.Z.); (Z.L.); (C.W.); (S.H.); (T.J.); (C.Q.); (Q.X.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
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Takaya T, Enokida I, Furukawa Y, Iwata K. Direct Observation of Structure and Dynamics of Photogenerated Charge Carriers in Poly(3-hexylthiophene) Films by Femtosecond Time-Resolved Near-IR Inverse Raman Spectroscopy. Molecules 2019; 24:molecules24030431. [PMID: 30691007 PMCID: PMC6384712 DOI: 10.3390/molecules24030431] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2018] [Revised: 01/18/2019] [Accepted: 01/22/2019] [Indexed: 11/16/2022] Open
Abstract
The initial charge separation process of conjugated polymers is one of the key factors for understanding their conductivity. The structure of photogenerated transients in conjugated polymers can be observed by resonance Raman spectroscopy in the near-IR region because they exhibit characteristic low-energy transitions. Here, we investigate the structure and dynamics of photogenerated transients in a regioregular poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend film, as well as in a pristine P3HT film, using femtosecond time-resolved resonance inverse Raman spectroscopy in the near-IR region. The transient inverse Raman spectrum of the pristine P3HT film at 50 ps suggests coexistence of neutral and charged excitations, whereas that of the P3HT:PCBM blend film at 50 ps suggests formation of positive polarons with a different structure from those in an FeCl3-doped P3HT film. Time-resolved near-IR inverse Raman spectra of the blend film clearly show the absence of charge separation between P3HT and PCBM within the instrument response time of our spectrometer, while they indicate two independent pathways of the polaron formation with time constants of 0.3 and 10 ps.
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Affiliation(s)
- Tomohisa Takaya
- Department of Chemistry, Faculty of Science, Gakushuin University, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588, Japan.
| | - Ippei Enokida
- Department of Advanced Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan.
| | - Yukio Furukawa
- Department of Advanced Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan.
| | - Koichi Iwata
- Department of Chemistry, Faculty of Science, Gakushuin University, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588, Japan.
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Song Y, Hellmann C, Stingelin N, Scholes GD. The separation of vibrational coherence from ground- and excited-electronic states in P3HT film. J Chem Phys 2015; 142:212410. [DOI: 10.1063/1.4916325] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- Yin Song
- Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
| | - Christoph Hellmann
- Department of Materials and Centre for Plastic Electronics, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom
| | - Natalie Stingelin
- Department of Materials and Centre for Plastic Electronics, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom
| | - Gregory D. Scholes
- Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
- Department of Chemistry, Princeton University, Washington Road, Princeton, New Jersey 08544, USA
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Wang YT, Chen MH, Lin CT, Fang JJ, Chang CJ, Luo CW, Yabushita A, Wu KH, Kobayashi T. Use of ultrafast time-resolved spectroscopy to demonstrate the effect of annealing on the performance of P3HT:PCBM solar cells. ACS APPLIED MATERIALS & INTERFACES 2015; 7:4457-4462. [PMID: 25692773 DOI: 10.1021/am508091u] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The organic solar cells of heterojunction system, ITO/PEDOT:PSS/P3HT:PCBM/Al, with a thermal annealing after deposition of Al exhibit better performance than those with an annealing process before deposition of Al. In this study, ultrafast time-resolved spectroscopy is employed to reveal the underlying mechanism of annealing effects on the performance of P3HT:PCBM solar cell devices. The analyses of all decomposed relaxation processes show that the postannealed devices exhibit an increase in charge transfer, in the number of separated polarons and a reduction in the amount of recombination between excited carriers. Moreover, the longer lifetime for the excited carriers in postannealed devices indicates it is more likely to be dissociated into photocarriers and result in a larger value for photocurrent, which demonstrates the physical mechanism for increased device performance.
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Affiliation(s)
- Yu-Ting Wang
- Department of Electrophysics, National Chiao Tung University , Hsinchu 30010, Taiwan
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Wang S, Nai CT, Jiang XF, Pan Y, Tan CH, Nesladek M, Xu QH, Loh KP. Graphene Oxide-Polythiophene Hybrid with Broad-Band Absorption and Photocatalytic Properties. J Phys Chem Lett 2012; 3:2332-2336. [PMID: 26292111 DOI: 10.1021/jz300930u] [Citation(s) in RCA: 34] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Hybrid graphene oxide (GO)/poly(3-hexylthiophene-2,5-diyl) (P3HT) sheets are assembled via π-π interaction and carefully isolated from the nonreacted precursors. The mutual influence of the two phases can be sharply manifested in this layer-to-layer configuration because it is undiluted by excess of one phase. To investigate the optical properties of the hybrid and possible synergistic interactions, we applied photothermal deflection spectroscopy (PDS) and pump-probe techniques. For the first time, the photocatalytic performance of these hybrids was investigated to correlate with their optical properties. The GO-P3HT hybrid demonstrates broad-band absorption and ultrafast charge transfer (1.4 ps) and acts as an excellent photocatalyst for the Mannich reaction (93% yield).
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Affiliation(s)
- Shuai Wang
- †Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
| | - Chang Tai Nai
- †Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
- ‡NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Centre for Life Sciences #05-01, 28 Medical Drive, Singapore 117456
| | - Xiao-Fang Jiang
- †Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
| | - Yuanhang Pan
- †Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
| | | | - Milos Nesladek
- ⊥IMEC-IMOMEC, Institute for Materials Research, Hasselt University, Wetenschapspark 1, B 3590 Diepenbeek, Belgium
| | - Qing-Hua Xu
- †Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
| | - Kian Ping Loh
- †Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
- ∥Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology (UNIST), Unist-gil 50, Ulsan 689-798, South Korea
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