Kinetic study of graphene growth: Temperature perspective on growth rate and film thickness by chemical vapor deposition

Recent Advances in Ultrathin Chiral Metasurfaces by Twisted Stacking

Artificial chiral nanostructures have been subjected to extensive research for their unique chiroptical activities. Planarized chiral films of ultrathin thicknesses are in particular demand for easy on-chip integration and improved energy efficiency as polarization-sensitive metadevices. Recently, controlled twisted stacking of two or more layers of nanomaterials, such as 2D van der Waals materials, ultrathin films, or traditional metasurfaces, at an angle has emerged as a general strategy to introduce optical chirality into achiral solid-state systems. This method endows new degrees of freedom, e.g., the interlayer twist angle, to flexibly engineer and tune the chiroptical responses without having to change the material or the design, thus greatly facilitating the development of multifunctional metamaterials. In this review, recent exciting progress in planar chiral metasurfaces are summarized and discussed from the viewpoints of building blocks, fabrication methods, as well as circular dichroism and modulation thereof in twisted stacked nanostructures. The review further highlights the ever-growing portfolio of applications of these chiral metasurfaces, including polarization conversion, information encryption, chiral sensing, and as an engineering platform for hybrid metadevices. Finally, forward-looking prospects are provided.

Analytical Model of CVD Growth of Graphene on Cu(111) Surface

Although the CVD synthesis of graphene on Cu(111) is an industrial process of outstanding importance, its theoretical description and modeling are hampered by its multiscale nature and the large number of elementary reactions involved. In this work, we propose an analytical model of graphene nucleation and growth on Cu(111) surfaces based on the combination of kinetic nucleation theory and the DFT simulations of elementary steps. In the framework of the proposed model, the mechanism of graphene nucleation is analyzed with particular emphasis on the roles played by the two main feeding species, C and C2. Our analysis reveals unexpected patterns of graphene growth, not typical for classical nucleation theories. In addition, we show that the proposed theory allows for the reproduction of the experimentally observed characteristics of polycrystalline graphene samples in the most computationally efficient way.

Substrate Engineering for CVD Growth of Single Crystal Graphene

Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next-generation high-performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large-scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large-size single-crystal substrates for the epitaxial CVD growth of large-area and high-quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single-crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed.

Hydrogen-Assisted Fast Growth of Large Graphene Grains by Recrystallization of Nanograins

Chemical vapor deposition has been highlighted as a promising tool for facile graphene growth in a large area. However, grain boundaries impose detrimental effects on the mechanical strength or electrical mobility of graphene. Here, we demonstrate that high-pressure hydrogen treatment in the preannealing step plays a key role in fast and large grain growth and leads to the successful synthesis of large grain graphene in 10 s. Large single grains with a maximum size of ∼160 μm grow by recrystallization of nanograins, but ∼1% areal coverage of nanograins remains with 28-30° misorientation angles. Our findings will provide insights into mass production of high-quality graphene.

Review of fabrication methods of large-area transparent graphene electrodes for industry

Graphene is a two-dimensional material showing excellent properties for utilization in transparent electrodes; it has low sheet resistance, high optical transmission and is flexible. Whereas the most common transparent electrode material, tin-doped indium-oxide (ITO) is brittle, less transparent and expensive, which limit its compatibility in flexible electronics as well as in low-cost devices. Here we review two large-area fabrication methods for graphene based transparent electrodes for industry: liquid exfoliation and low-pressure chemical vapor deposition (CVD). We discuss the basic methodologies behind the technologies with an emphasis on optical and electrical properties of recent results. State-of-the-art methods for liquid exfoliation have as a figure of merit an electrical and optical conductivity ratio of 43.5, slightly over the minimum required for industry of 35, while CVD reaches as high as 419.

Formation of TiO2@Carbon Core/Shell Nanocomposites from a Single Molecular Layer of Aromatic Compounds for Photocatalytic Hydrogen Peroxide Generation

In this article, we demonstrate that TiO₂@carbon core/shell (TiO₂@C) nanocomposite photocatalysts prepared by carbonizing a single molecular layer of aromatic compounds adsorbed on the surface of TiO₂ nanoparticles selectively enhance the generation of hydrogen peroxide (H₂O₂). Atomically thin carbon shells have been formed directly on the surface of TiO₂ nanoparticles through pyrolytic decarboxylation of the adsorbed aromatic compounds, benzoic acid (BA), and 1-naphthoic acid (NA), which yields two types of TiO₂@C nanocomposites, TiO₂@C(BA) and TiO₂@C(NA). Raman spectroscopy shows that the as-obtained nanocomposites have similar degrees of graphitization (D/G band ratio), regardless of the type of aromatic precursors, but TiO₂@C(NA) contains more oxygenic species than TiO₂@C(BA) (D*/G band ratio). Such oxygenic species predominantly exist in the form of epoxide groups, as determined by attenuated total reflection infrared spectroscopy. The sp² carbon atoms near the epoxide groups in the carbon shell can act as active sites for the two-electron reduction of O₂. Therefore, TiO₂@C(NA) can generate H₂O₂ more efficiently than TiO₂@C(BA). Furthermore, the carbon shells retard the reconsumption of the generated H₂O₂ by inhibiting the adsorption of H₂O₂ on the surface of TiO₂ nanoparticles, thereby improving the photocatalytic efficiency of H₂O₂ generation. Finally, we have shown the durability and reproducibility of our TiO₂@C-based photocatalytic systems. We believe that our research may offer a potentially improved strategy for H₂O₂ generation and other photocatalytic applications.

Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition

The future electronic application of graphene highly relies on the production of large-area high-quality single-crystal graphene. However, the growth of single-crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 °C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single-crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 °C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 °C have a carrier mobility up to ≈9700 cm² V^-1 s^-1 at room temperature. This work shines light on a way toward a much lower temperature growth of high-quality graphene in single crystallinity, which could benefit future electronic applications.

Mo2C/graphene heterostructures: low temperature chemical vapor deposition on liquid bimetallic Sn-Cu and hydrogen evolution reaction electrocatalytic properties

Thin 2D Mo₂C/graphene vertical heterostructures have attracted significant attention due to their potential application as electrodes in the hydrogen evolution reaction (HER) and energy storage. A common drawback in the chemical vapor deposition synthesis of these structures is the demand for high temperature growth, which should be higher than the melting temperature of the metal catalyst. The most common metallic catalyst is Cu, which has a melting temperature of 1084 °C. Here, we report the growth of thin, ∼200 nm in thickness, semitransparent micrometer-sized Mo₂C domains and Mo₂C/graphene heterostructures at lower temperatures using liquid Sn-Cu alloys. No Sn-associated defects are observed, making the alloy an appealing growth substrate. Raman spectroscopy reveals the vertical interaction between graphene and Mo₂C, as shown by the variation in the strain of the graphene film. The results demonstrate the capability to grow continuous nanometer-thin Mo₂C films at temperatures as low as 880 °C, without sacrificing the growth rate. Mo₂C films are proven to be efficient electrocatalysts for the HER. Moreover, we demonstrate the beneficial role of graphene overgrown on Mo₂C in reducing the HER overpotential values, which is attributed to more efficient charge transfer kinetics, compared to pure Mo₂C films.

Kinetics of Graphene and 2D Materials Growth

During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.

Kinetic studies of few-layer graphene grown by flame deposition from the perspective of gas composition and temperature

Growth kinetics of few-layer graphene grown by flame deposition correlates to BIN20J species in a methane to soot mechanism model.

Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have stimulated the modern technology due to their unique and tunable electronic, optical, and chemical properties. Therefore, it is very important to study the control parameters for material preparation to achieve high quality thin films for modern electronics, as the performance of TMDs-based device largely depends on their layer number, grain size, orientation, and morphology. Among the synthesis methods, chemical vapor deposition (CVD) is an excellent technique, vastly used to grow controlled layer of 2D materials in recent years. In this review, we discuss the different growth routes and mechanisms to synthesize high quality large size TMDs using CVD method. We highlight the recent advances in the controlled growth of mono- and few-layer TMDs materials by varying different growth parameters. Finally, different strategies to control the grain size, boundaries, orientation, morphology and their application for various field of are also thoroughly discussed.

Highly Oriented Monolayer Graphene Grown on a Cu/Ni(111) Alloy Foil

Fast-growth of single crystal monolayer graphene by CVD using methane and hydrogen has been achieved on "homemade" single crystal Cu/Ni(111) alloy foils over large area. Full coverage was achieved in 5 min or less for a particular range of composition (1.3 at.% to 8.6 at.% Ni), as compared to 60 min for a pure Cu(111) foil under identical growth conditions. These are the bulk atomic percentages of Ni, as a superstructure at the surface of these foils with stoichiometry Cu₆Ni₁ (for 1.3 to 7.8 bulk at.% Ni in the Cu/Ni(111) foil) was discovered by low energy electron diffraction (LEED). Complete large area monolayer graphene films are either single crystal or close to single crystal, and include folded regions that are essentially parallel and that were likely wrinkles that "fell over" to bind to the surface; these folds are separated by large, wrinkle-free regions. The folds occur due to the buildup of interfacial compressive stress (and its release) during cooling of the foils from 1075 °C to room temperature. The fold heights measured by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) prove them to all be 3 layers thick, and scanning electron microscopy (SEM) imaging shows them to be around 10 to 300 nm wide and separated by roughly 20 μm. These folds are always essentially perpendicular to the steps in this Cu/Ni(111) substrate. Joining of well-aligned graphene islands (in growths that were terminated prior to full film coverage) was investigated with high magnification SEM and aberration-corrected high-resolution transmission electron microscopy (TEM) as well as AFM, STM, and optical microscopy. These methods show that many of the "join regions" have folds, and these arise from interfacial adhesion mechanics (they are due to the buildup of compressive stress during cool-down, but these folds are different than for the continuous graphene films-they occur due to "weak links" in terms of the interface mechanics). Such Cu/Ni(111) alloy foils are promising substrates for the large-scale synthesis of single-crystal graphene film.

Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments

Vertical stacking of monolayers via van der Waals (vdW) interaction opens promising routes toward engineering physical properties of two-dimensional (2D) materials and designing atomically thin devices. However, due to the lack of mechanistic understanding, challenges remain in the controlled fabrication of these structures via scalable methods such as chemical vapor deposition (CVD) onto substrates. In this paper, we develop a general multiscale model to describe the size evolution of 2D layers and predict the necessary growth conditions for vertical (initial + subsequent layers) versus in-plane lateral (monolayer) growth. An analytic thermodynamic criterion is established for subsequent layer growth that depends on the sizes of both layers, the vdW interaction energies, and the edge energy of 2D layers. Considering the time-dependent growth process, we find that temperature and adatom flux from vapor are the primary criteria affecting the self-assembled growth. The proposed model clearly demonstrates the distinct roles of thermodynamic and kinetic mechanisms governing the final structure. Our model agrees with experimental observations of various monolayer and bilayer transition metal dichalcogenides grown by CVD and provides a predictive framework to guide the fabrication of vertically stacked 2D materials.

Probing the Gas-Phase Dynamics of Graphene Chemical Vapour Deposition using in-situ UV Absorption Spectroscopy

The processes governing multilayer nucleation in the chemical vapour deposition (CVD) of graphene are important for obtaining high-quality monolayer sheets, but remain poorly understood. Here we show that higher-order carbon species in the gas-phase play a major role in multilayer nucleation, through the use of in-situ ultraviolet (UV) absorption spectroscopy. These species are the volatilized products of reactions between hydrogen and carbon contaminants that have backstreamed into the reaction chamber from downstream system components. Consequently, we observe a dramatic suppression of multilayer nucleation when backstreaming is suppressed. These results point to an important and previously undescribed mechanism for multilayer nucleation, wherein higher-order gas-phase carbon species play an integral role. Our work highlights the importance of gas-phase dynamics in understanding the overall mechanism of graphene growth.

Nucleation and growth of single layer graphene on electrodeposited Cu by cold wall chemical vapor deposition

The nucleation density and average size of graphene crystallites grown using cold wall chemical vapor deposition (CVD) on 4 μm thick Cu films electrodeposited on W substrates can be tuned by varying growth parameters. Growth at a fixed substrate temperature of 1000 °C and total pressure of 700 Torr using Ar, H₂ and CH₄ mixtures enabled the contribution of total flow rate, CH₄:H₂ ratio and dilution of the CH₄/H₂ mixture by Ar to be identified. The largest variation in nucleation density was obtained by varying the CH₄:H₂ ratio. The observed morphological changes are analogous to those that would be expected if the deposition rate were varied at fixed substrate temperature for physical deposition using thermal evaporation. The graphene crystallite boundary morphology progresses from irregular/jagged through convex hexagonal to regular hexagonal as the effective C deposition rate decreases. This observation suggests that edge diffusion of C atoms along the crystallite boundaries, in addition to H₂ etching, may contribute to shape evolution of the graphene crystallites. These results demonstrate that graphene grown using cold wall CVD follows a nucleation and growth mechanism similar to hot wall CVD. As a consequence, the vast knowledge base relevant to hot wall CVD may be exploited for graphene synthesis by the industrially preferable cold wall method.

Toward fast growth of large area high quality graphene using a cold-wall CVD reactor

In this work we provide a detailed analysis on graphene synthesis by Chemical Vapor Deposition (CVD) using a cold wall CVD reactor to achieve fast production of large area high quality graphene.