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Meisenheimer PB, Steinhardt RA, Sung SH, Williams LD, Zhuang S, Nowakowski ME, Novakov S, Torunbalci MM, Prasad B, Zollner CJ, Wang Z, Dawley NM, Schubert J, Hunter AH, Manipatruni S, Nikonov DE, Young IA, Chen LQ, Bokor J, Bhave SA, Ramesh R, Hu JM, Kioupakis E, Hovden R, Schlom DG, Heron JT. Engineering new limits to magnetostriction through metastability in iron-gallium alloys. Nat Commun 2021; 12:2757. [PMID: 33980848 PMCID: PMC8115637 DOI: 10.1038/s41467-021-22793-x] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2020] [Accepted: 03/30/2021] [Indexed: 11/09/2022] Open
Abstract
Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe1-xGax alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe1-xGax alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe1-xGax - [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10-5 s m-1. When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.
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Affiliation(s)
- P B Meisenheimer
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - R A Steinhardt
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - S H Sung
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - L D Williams
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY, USA
| | - S Zhuang
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - M E Nowakowski
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - S Novakov
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - M M Torunbalci
- OxideMEMS Lab, Purdue University, West Lafayette, IN, USA
| | - B Prasad
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - C J Zollner
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Z Wang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - N M Dawley
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - J Schubert
- Peter Grünberg Institute (PGI-9) and JARA Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, Jülich, Germany
| | - A H Hunter
- Michigan Center for Materials Characterization, University of Michigan, Ann Arbor, MI, USA
| | - S Manipatruni
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - D E Nikonov
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - I A Young
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - L Q Chen
- Department of Materials Science and Engineering, Penn State University, State College, PA, USA
| | - J Bokor
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - S A Bhave
- OxideMEMS Lab, Purdue University, West Lafayette, IN, USA
| | - R Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, CA, USA.,Department of Physics, University of California, Berkeley, CA, USA
| | - J-M Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - E Kioupakis
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - R Hovden
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.,Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin, Germany
| | - J T Heron
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
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Silveira B, Belo J, Pinto R, Silva J, Ferreira T, Pires A, Chu V, Conde J, Frazão O, Pereira A. Magnetostriction in Amorphous Co 66Fe 34 Microcantilevers Fabricated with Hydrogenated Amorphous Silicon. EPJ WEB OF CONFERENCES 2020. [DOI: 10.1051/epjconf/202023305003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Abstract
To study the magnetostriction of Co66Fe34 thin films, amorphous silicon microcantilevers were prepared by surface micromachining, and the 136 nm-thick magnetostrictive film was deposited by electron beam physical vapor deposition and patterned on top of the microcantilever structure. The magnetostriction of the Co66Fe34 films was confirmed by measuring the deflection of the cantilevers under a varying magnetic field, reaching displacements up to 8 nm. The configuration was simulated using COMSOL software, yielding a similar deflection behavior as a function of the magnetic field, with a film with a magneto strictive coefficient of λ S ~ 55 p.p.m. The experimental configuration uses a laser and a position sensitive detector to measure the displacement, based on an optical lever configuration, and a piezoelectric stage to calibrate the system.
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Nam DY, Samardak AY, Jeon YS, Kim SH, Davydenko AV, Ognev AV, Samardak AS, Kim YK. Magnetization reversal of ferromagnetic nanosprings affected by helical shape. NANOSCALE 2018; 10:20405-20413. [PMID: 30376025 DOI: 10.1039/c8nr05655b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Helicity, a natural property of macro-, micro-, and nano-objects, potentially offers a new dimension to mechanical and electromagnetic applications for creating emerging nanodevices, such as nanorobots, nanomagnets, nanosensors, and high-density magnetic memory. Helical magnetic nanosprings are unique objects with remarkable magnetic properties, including the absence of stray fields in remanence owing to the chiral geometry, which makes them promising for data storage devices, nanoelectromechanical systems, and biomedical usage. Here, we investigated Co and CoFe nanospring arrays electrodeposited in highly ordered nanoporous templates. We report helical-shape-driven magnetization reversal of the nanosprings in comparison with the behavior of dipolarly coupled nanowires. We reveal two magnetization reversal modes depending on the orientation of the external magnetic field: coherent rotation of magnetization in the longitudinal geometry and three-dimensional vortex domain wall motion in the transverse geometry. The experimental findings are supported by analytical calculations and micromagnetic simulations that help to explain the field-dependent spin configurations observed by magnetic force microscopy.
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Affiliation(s)
- Da Yeon Nam
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea.
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