Engineering new limits to magnetostriction through metastability in iron-gallium alloys

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe_1-xGa_x alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe_1-xGa_x alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe_1-xGa_x - [Pb(Mg_1/3Nb_2/3)O₃]_0.7-[PbTiO₃]_0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10^-5 s m^-1. When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

The manipulation of antiferromagnetic order in magnetoelectric Cr₂O₃ using electric field has been of great interest due to its potential in low-power electronics. The substantial leakage and low dielectric breakdown observed in twinned Cr₂O₃ thin films, however, hinders its development in energy efficient spintronics. To compensate, large film thicknesses (250 nm or greater) have been employed at the expense of device scalability. Recently, epitaxial V₂O₃ thin film electrodes have been used to eliminate twin boundaries and significantly reduce the leakage of 300 nm thick single crystal films. Here we report the electrical endurance and magnetic properties of thin (less than 100 nm) single crystal Cr₂O₃ films on epitaxial V₂O₃ buffered Al₂O₃ (0001) single crystal substrates. The growth of Cr₂O₃ on isostructural V₂O₃ thin film electrodes helps eliminate the existence of twin domains in Cr₂O₃ films, therefore significantly reducing leakage current and increasing dielectric breakdown. 60 nm thick Cr₂O₃ films show bulk-like resistivity (~ 10¹² Ω cm) with a breakdown voltage in the range of 150-300 MV/m. Exchange bias measurements of 30 nm thick Cr₂O₃ display a blocking temperature of ~ 285 K while room temperature optical second harmonic generation measurements possess the symmetry consistent with bulk magnetic order.

Giant Enhancement of Exchange Coupling in Entropy-Stabilized Oxide Heterostructures

Entropy-stabilized materials are stabilized by the configurational entropy of the constituents, rather than the enthalpy of formation of the compound. A unique benefit to entropy-stabilized materials is the increased solubility of elements, which opens a broad compositional space, with subsequent local chemical and structural disorder resulting from different atomic sizes and preferred coordinations of the constituents. Known entropy-stabilized oxides contain magnetically interesting constituents, however, the magnetic properties of the multi-component oxide have yet to be investigated. Here we examine the role of disorder and composition on the exchange anisotropy of permalloy/(Mg_0.25(1-x)Co_xNi_0.25(1-x)Cu_0.25(1-x)Zn_0.25(1-x))O heterostructures. Anisotropic magnetic exchange and the presence of a critical blocking temperature indicates that the magnetic order of the entropy-stabilized oxides considered here is antiferromagnetic. Changing the composition of the oxide tunes the disorder, exchange field and magnetic anisotropy. Here, we exploit this tunability to enhance the strength of the exchange field by a factor of 10x at low temperatures, when compared to a permalloy/CoO heterostructure. Significant deviations from the rule of mixtures are observed in the structural and magnetic parameters, indicating that the crystal is dominated by configurational entropy. Our results reveal that the unique characteristics of entropy-stabilized materials can be utilized and tailored to engineer magnetic functional phenomena in oxide thin films.

Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure

A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.

Microscopic origin of the giant ferroelectric polarization in tetragonal-like BiFeO(3)

We report direct experimental evidence for a room-temperature, ∼130  μC/cm(2) ferroelectric polarization from the tetragonal-like BiFeO(3) phase. The physical origin of this remarkable enhancement of ferroelectric polarization has been investigated by a combination of x-ray absorption spectroscopy, scanning transmission electron microscopy, and first principles calculations. A large strain-induced Fe-ion displacement relative to the oxygen octahedra, combined with the contribution of Bi 6s lone pair electrons, is the mechanism driving the large ferroelectric polarization in this tetragonal-like phase.