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Znati S, Wharwood J, Tezanos KG, Li X, Mohseni PK. Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors. NANOSCALE 2024; 16:10901-10946. [PMID: 38804075 DOI: 10.1039/d4nr00857j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for fabricating a variety of semiconductor nanostructures. Since early investigations in 2000, research in this field has provided a deeper understanding of the underlying mechanisms of catalytic etching processes and enabled high control over etching conditions for diverse applications. In this Review, we present an overview of recent developments in the application of MacEtch to nanomanufacturing and processing of III-V based semiconductor materials and other materials beyond Si. We highlight the key findings and developments in MacEtch as applied to GaAs, GaN, InP, GaP, InGaAs, AlGaAs, InGaN, InGaP, SiC, β-Ga2O3, and Ge material systems. We further review a series of active and passive devices enabled by MacEtch, including light-emitting diodes (LEDs), field-effect transistors (FETs), optical gratings, sensors, capacitors, photodiodes, and solar cells. By reviewing demonstrated control of morphology, optimization of etch conditions, and catalyst-material combinations, we aim to distill the current understanding of beyond-Si MacEtch mechanisms and to provide a bank of reference recipes to stimulate progress in the field.
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Affiliation(s)
- Sami Znati
- Microsystem Engineering, Rochester Institute of Technology, Rochester, NY 16423, USA.
- NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, NY 14623, USA
| | - Juwon Wharwood
- NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, NY 14623, USA
- Department of Electrical and Computer Engineering, Howard University, Washington, DC 20059, USA
| | - Kyle G Tezanos
- NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, NY 14623, USA
- School of Materials Science and Chemistry, Rochester Institute of Technology, Rochester, NY 14623, USA
| | - Xiuling Li
- Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA
| | - Parsian K Mohseni
- Microsystem Engineering, Rochester Institute of Technology, Rochester, NY 16423, USA.
- NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, NY 14623, USA
- School of Materials Science and Chemistry, Rochester Institute of Technology, Rochester, NY 14623, USA
- Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623, USA
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Monaico EI, Monaico EV, Ursaki VV, Tiginyanu IM. Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another. SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY 2021. [DOI: 10.3103/s106837552102006x] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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Monaico EI, Monaico EV, Ursaki VV, Honnali S, Postolache V, Leistner K, Nielsch K, Tiginyanu IM. Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2020; 11:966-975. [PMID: 32704459 PMCID: PMC7356395 DOI: 10.3762/bjnano.11.81] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2020] [Accepted: 05/27/2020] [Indexed: 06/11/2023]
Abstract
A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO3 electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 µm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated.
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Affiliation(s)
- Elena I Monaico
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
| | - Eduard V Monaico
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
| | - Veaceslav V Ursaki
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
- Academy of Sciences of Moldova, Chisinau MD-2001, Republic of Moldova
| | | | - Vitalie Postolache
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
| | - Karin Leistner
- Leibniz IFW Dresden, Helmholtzstr. 20, 01069 Dresden, Germany
| | | | - Ion M Tiginyanu
- National Center for Materials Study and Testing, Technical University of Moldova, Chisinau MD-2004, Republic of Moldova
- Academy of Sciences of Moldova, Chisinau MD-2001, Republic of Moldova
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Lova P, Soci C. Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling. MICROMACHINES 2020; 11:mi11060573. [PMID: 32517034 PMCID: PMC7344674 DOI: 10.3390/mi11060573] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/17/2020] [Revised: 05/28/2020] [Accepted: 06/04/2020] [Indexed: 11/16/2022]
Abstract
Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to further enhance photon absorption of GaAs and improve photovoltaic performance. To this end, metal-assisted chemical etching represents a simple, low-cost, and easy to scale-up microstructuring method, particularly when compared to dry etching methods. In this work, we show that the etched GaAs (black GaAs) has exceptional light trapping properties inducing a 120 times lower surface reflectance than that of polished GaAs and that the structured surface favors photon recycling. As a proof of principle, we investigate photon reabsorption in hybrid GaAs:poly (3-hexylthiophene) heterointerfaces.
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Affiliation(s)
- Paola Lova
- Correspondence: ; Tel.: +39-010-353-6192
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Lova P, Robbiano V, Cacialli F, Comoretto D, Soci C. Black GaAs by Metal-Assisted Chemical Etching. ACS APPLIED MATERIALS & INTERFACES 2018; 10:33434-33440. [PMID: 30191706 DOI: 10.1021/acsami.8b10370] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Large area surface microstructuring is commonly employed to suppress light reflection and enhance light absorption in silicon photovoltaic devices, photodetectors, and image sensors. To date, however, there are no simple means to control the surface roughness of III-V semiconductors by chemical processes similar to the metal-assisted chemical etching of black Si. Here, we demonstrate the anisotropic metal-assisted chemical etching of GaAs wafers exploiting the lower etching rate of the monoatomic Ga<111> and <311> planes. By studying the dependence of this process on different crystal orientations, we propose a qualitative reaction mechanism responsible for the self-limiting anisotropic etching and show that the reflectance of the roughened surface of black GaAs reduces up to ∼50 times compared to polished wafers, nearly doubling its absorption. This method provides a new, simple, and scalable way to enhance light absorption and power conversion efficiency of GaAs solar cells and photodetectors.
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Affiliation(s)
- Paola Lova
- Energy Research Institute at NTU (ERI@N) and Interdisciplinary Graduate School , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798
- School of Physical and Mathematical Sciences, Division of Physics and Applied Physics , Nanyang Technological University , 21 Nanyang Link , Singapore 637371
| | - Valentina Robbiano
- Department of Physics and Astronomy and London Centre for Nanotechnology , University College London , London WC1E 6BT , United Kingdom
| | - Franco Cacialli
- Department of Physics and Astronomy and London Centre for Nanotechnology , University College London , London WC1E 6BT , United Kingdom
| | - Davide Comoretto
- Dipartimento di Chimica e Chimica Industriale , Università degli Studi di Genova , via Dodecaneso 31 , 16121 Genova , Italy
| | - Cesare Soci
- Energy Research Institute at NTU (ERI@N) and Interdisciplinary Graduate School , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798
- School of Physical and Mathematical Sciences, Division of Physics and Applied Physics , Nanyang Technological University , 21 Nanyang Link , Singapore 637371
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Giubileo F, Di Bartolomeo A, Iemmo L, Luongo G, Passacantando M, Koivusalo E, Hakkarainen TV, Guina M. Field Emission from Self-Catalyzed GaAs Nanowires. NANOMATERIALS 2017; 7:nano7090275. [PMID: 28926948 PMCID: PMC5618386 DOI: 10.3390/nano7090275] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/23/2017] [Revised: 09/12/2017] [Accepted: 09/13/2017] [Indexed: 11/16/2022]
Abstract
We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements were taken inside a scanning electron microscope chamber with a nano-controlled tungsten tip functioning as anode. Experimental data were analyzed in the framework of the Fowler-Nordheim theory. We demonstrate stable current up to 10-7 A emitted from the tip of single nanowire, with a field enhancement factor β of up to 112 at anode-cathode distance d = 350 nm. A linear dependence of β on the anode-cathode distance was found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allowed for the detection of field emission from the nanowire sidewalls, which occurred with a reduced field enhancement factor and stability. This study further extends GaAs technology to vacuum electronics applications.
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Affiliation(s)
- Filippo Giubileo
- CNR-SPIN Salerno, via Giovanni Paolo II n.132, I-84084 Fisciano, Italy.
| | - Antonio Di Bartolomeo
- CNR-SPIN Salerno, via Giovanni Paolo II n.132, I-84084 Fisciano, Italy.
- Physics Department 'E. R. Caianiello', University of Salerno, via Giovanni Paolo II, I-84084 Fisciano, Italy.
| | - Laura Iemmo
- Physics Department 'E. R. Caianiello', University of Salerno, via Giovanni Paolo II, I-84084 Fisciano, Italy.
| | - Giuseppe Luongo
- CNR-SPIN Salerno, via Giovanni Paolo II n.132, I-84084 Fisciano, Italy.
- Physics Department 'E. R. Caianiello', University of Salerno, via Giovanni Paolo II, I-84084 Fisciano, Italy.
| | - Maurizio Passacantando
- Department of Physical and Chemical Science, University of L'Aquila, via Vetoio, Coppito, I-67100 L'Aquila, Italy.
| | - Eero Koivusalo
- Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, FI-33720 Tampere, Finland.
| | - Teemu V Hakkarainen
- Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, FI-33720 Tampere, Finland.
| | - Mircea Guina
- Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, FI-33720 Tampere, Finland.
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Lee S, Park B, Kim JS, Kim TI. Designs and processes toward high-aspect-ratio nanostructures at the deep nanoscale: unconventional nanolithography and its applications. NANOTECHNOLOGY 2016; 27:474001. [PMID: 27775918 DOI: 10.1088/0957-4484/27/47/474001] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The patterning of high-resolution-featured deep-nanoscale structures with a high aspect ratio (AR) has received increasing attention in recent years as a promising technique for a wide range of applications, including electrical, optical, mechanical and biological systems. Despite extensive efforts to develop viable nanostructure fabrication processes, a superior technique enabling defect-free, high-resolution control over a large area is still required. In this review, we focus on recent important advances in the designs and processes of high-resolution nanostructures possessing a high AR, including hierarchical and 3D patterns. The unique applications of these materials are also discussed.
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Affiliation(s)
- Sori Lee
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 440-746, Korea
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Zhang Z, Geng C, Hao Z, Wei T, Yan Q. Recent advancement on micro-/nano-spherical lens photolithography based on monolayer colloidal crystals. Adv Colloid Interface Sci 2016; 228:105-22. [PMID: 26732300 DOI: 10.1016/j.cis.2015.11.012] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2015] [Revised: 11/18/2015] [Accepted: 11/19/2015] [Indexed: 10/22/2022]
Abstract
Highly ordered nanostructures have gained substantial interest in the research community due to their fascinating properties and wide applications.Micro-/nano-spherical lens photolithography (SLPL) has been recognized as an inexpensive, inherently parallel, and high-throughput approach to the creation of highly ordered nanostructures. SLPL based on monolayer colloidal crystals (MCCs) of self-assembled colloidal micro-/nano-spheres have recently made remarkable progress in overcoming the constraints of conventional photolithography in terms of cost, feature size, tunability, and pattern complexity. In this review, we highlight the current state-of-the-art in this field with an emphasis on the fabrication of a variety of highly ordered nanostructures based on this technique and their demonstrated applications in light emitting diodes, nano-patterning semiconductors, and localized surface plasmon resonance devices. Finally, we present a perspective on the future development of MCC-based SLPL technique, including a discussion on the improvement of the quality of MCCs and the compatibility of this technique with other semiconductor micromachining process for nanofabrication.
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Asoh H, Suzuki Y, Ono S. Metal-assisted chemical etching of GaAs using Au catalyst deposited on the backside of a substrate. Electrochim Acta 2015. [DOI: 10.1016/j.electacta.2015.05.167] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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