Surface plasma–induced tunable nitrogen doping through precursors provides 1T-2H MoSe2/graphene sheet composites as electrocatalysts for the hydrogen evolution reaction

Efficient electrochemical hydrogen evolution activity of nanostructured Ag3PO4/MoS2 heterogeneous composite catalyst

Hydrogen (H2) generation by electrochemical water splitting is a key technique for sustainable energy applications. Two-dimensional (2D) transition-metal dichalcogenide (MoS2) and silver phosphate (Ag3PO4) possess excellent electrochemical hydrogen evolution reaction (HER) properties when they are combined together as a composite rather than individuals. Reports examining the HER activity by using Ag3PO4, especially, in combination with the 2D layered MoS2 are limited in literature. The weight fraction of MoS2 in Ag3PO4 is optimized for 1, 3, and 5 wt%. The Ag3PO4/1 wt % MoS2 combination exhibits enhanced HER activity with least overpotential of 235 mV among the other samples in the acidic medium. The synergistic effect of optimal nano-scale 2D layered MoS2 structure and Ag3PO4 is essential for creating higher electrochemical active surface area of 217 mF/cm2, and hence this leads to faster reaction kinetics in the HER. This work suggests the advantages of Ag3PO4/1 wt % MoS2 heterogeneous composite catalyst for electrochemical analysis and HER indicating lower resistivity and low Tafel slope value (179 mV/dec) among the prepared catalysts making it a promising candidate for its use in practical energy applications.

Defect and interface/surface engineering synergistically modulated electron transfer and nonlinear absorption properties in MoX2 (X = Se, S, Te)@ZnO heterojunction

Systematic interface and defect engineering strategies have been demonstrated to be an effective way to modulate the electron transfer and nonlinear absorption properties in semiconductor heterojunctions. However, the role played by defects and interfacial strain in electron transfer at the interface of the MoX2 (X = Se, S, Te)@ZnO heterojunction remains poorly understood. Herein, using the MoX2@ZnO heterojunction, we reveal that vacancies play a critical role in the interfacial electron transfer of heterojunctions. Specifically, we present the defect and interface engineering of the MoX2@ZnO heterojunction for controlled charge transfer and electron excitation-relaxation. The experimental characterization combined with first-principles calculations showed that the presence of defects promoted the transport of photogenerated carriers at the heterojunction interface, thereby inhibiting their rapid recombination. The DFT calculation confirmed that the electron band structure, density of states and charge density distribution in the system changed after the formation of Mo-O bonds. On the basis of defects and interfacial stress and the effective charge transfer, the MoX2@ZnO heterojunction exhibited excellent excitation and emission behaviors. The nonlinear optical regulation behavior of TMDs is expected to be realized with the help of the defects and interface/surface synergistically modulated effect of ZnO nanoparticles. The local strain generation on the MoX2@ZnO heterojunction boundary provides a new method for the design of new heterogeneous materials and will be of great significance to investigate the contact physical behavior and application of metals and two-dimensional (2D) semiconductors. This work provides some inspiration for the construction of heterojunctions with rich defects and surface/interface charge transfer channels to promote tunable electron transfer dynamics, thereby achieving a good nonlinear optical conversion efficiency and efficient charge separation in optoelectronic functional materials.

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

Escalating Catalytic Activity for Hydrogen Evolution Reaction on MoSe2@Graphene Functionalization

Developing highly efficient and durable hydrogen evolution reaction (HER) electrocatalysts is crucial for addressing the energy and environmental challenges. Among the 2D-layered chalcogenides, MoSe₂ possesses superior features for HER catalysis. The van der Waals attractions and high surface energy, however, stack the MoSe₂ layers, resulting in a loss of edge active catalytic sites. In addition, MoSe₂ suffers from low intrinsic conductivity and weak electrical contact with active sites. To overcome the issues, this work presents a novel approach, wherein the in situ incorporated diethylene glycol solvent into the interlayers of MoSe₂ during synthesis when treated thermally in an inert atmosphere at 600 °C transformed into graphene (Gr). This widened the interlayer spacing of MoSe₂, thereby exposing more HER active edge sites with high conductivity offered by the incorporated Gr. The resulting MoSe₂-Gr composite exhibited a significantly enhanced HER catalytic activity compared to the pristine MoSe₂ in an acidic medium and demonstrated a superior HER catalytic activity compared to the state-of-the-art Pt/C catalyst, particularly at a high current density beyond ca. 55 mA cm^-2. Additionally, the MoSe₂-Gr catalyst demonstrated long-term electrochemical stability during HER. This work, thus, presents a facile and novel approach for obtaining an efficient MoSe₂ electrocatalyst applicable in green hydrogen production.

Ni-Co bimetallic decorated dodecahedral ZIF as an efficient catalyst for photoelectrochemical degradation of sulfamethoxazole coupled with hydrogen production

In this work, a NiCo bimetallic ZIF (BMZIF) dodecahedron material has been synthesized by the precipitation approach and then used for simultaneously photoelectrocatalytic degradation of sulfamethoxazole (SMX) and hydrogen production. The combination of Ni/Co loading in ZIF structure increased the specific surface area 1484 (m² g^-1) and photocurrent density (0.4 mA cm^-2), which can facilitate the good charge transfer efficiency. In presence of peroxymonosulfate (PMS, 0.1 mM), the complete degradation of SMX (10 mg L^-1) was achieved at initial pH of 7 within 24 min, with the pseudo-first-order rate constants of 0.18 min^-1 and TOC removal efficiency of 85 %. Radical scavenger experiments affirm that ^•OH radicals were the primary oxygen reactive species to drive the SMX degradation. Along with SMX degradation at the anode, the H₂ production was observed at the cathode (140 μmol cm^-2 h^-1), which was 1.5 and 3 times higher than that of Co-ZIF and Ni-ZIF, respectively. The superior catalytic performance of BMZIF was assigned to the distinctive internal structure and synergistic effect between ZIF and Ni/Co bimetals, which improves light absorption and charge conduction efficiency. This study may provide insight into the new way to treat polluted water and simultaneously produce green energy using bimetallic ZIF in a PEC system.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.