Toward emerging gallium oxide semiconductors: A roadmap

Theoretical design of active Ga2O3 monolayer-based catalysts for electrocatalytic HER

Electrocatalytic hydrogen evolution reaction (HER) offers a sustainable and clean route for hydrogen production. Developing a high-efficiency HER catalyst is extremely essential toward meeting future energy needs. Herein, the Sn-doped Ga2O3 monolayer, O-defected Ga2O3 monolayer, and Ru-adsorbed Ga2O3 monolayer with high electrocatalytic performances toward HER are reported (their H adsorption free energies are 0.169, 0.126 and 0.065 eV, respectively). The Sn-doped Ga2O3 monolayer follows the Volmer-Heyrovsky mechanism, and the O-defected Ga2O3 monolayer and Ru-adsorbed Ga2O3 monolayer are suitable for Volmer-Tafel mechanisms. The strain from -4% to 4% in the X- or Y-direction could linearly modulate the HER activities of the Sn-doped Ga2O3 monolayer and O-defected Ga2O3 monolayer. The Sn-doped Ga2O3 monolayer, O-defected Ga2O3 monolayer, and Ru-adsorbed Ga2O3 monolayer only manifest high HER catalytic activities in the strong acidic media. These phenomena can provide a rational approach to enhance the HER activity for Ga2O3 monolayer-based materials.

Wavelength Modulation and Fast Response of Mixed-Phase β-Ga2O3:Zn/SnO2 in-Plane Heterojunction Ultraviolet Photodetectors

Ultraviolet photodetectors based on wide bandgap mixed-phase β-Ga2O3:Zn/SnO2 thin films formed through doping on the c-sapphire substrate (c-Al2O3) are prepared to construct in-plane heterojunctions employing a low-cost and simple preparation method. The mixed-phase thin film photodetectors have a low dark current of 0.74 nA, and the photo-to-dark current ratio ranges from 36.43 to 642.38 at 10 V. The photodetectors also have wavelength modulation, with response peaks ranging from 260 nm (4 mA/W) to 295 nm (1.63 A/W). Furthermore, the photodetectors have a fast response time with a rise time of 0.07 s/0.22 s and a decay time of 0.04 s/0.22 s at 1 V. The excellent performance of the devices is attributed to the reduction of VO and the establishment of multiple electric fields in the mixed-phase films, which indicates the feasibility of implementing wavelength-modulated and fast-response β-Ga2O3 photodetectors using the sol-gel method.

An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties

Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of Ga2O3 films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped Ga2O3 films, reducing it from 4.2 × 106 Ω cm to 2 × 105 Ω cm for the 2.5 at. % Sn:Ga2O3 compared to the nominally undoped Ga2O3.

Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing

Two-dimensional semiconductors (2DSEM) based on van der Waals crystals offer important avenues for nanotechnologies beyond the constraints of Moore's law and traditional semiconductors, such as silicon (Si). However, their application necessitates precise engineering of material properties and scalable manufacturing processes. The ability to oxidize Si to form silicon dioxide (SiO2) was crucial for the adoption of Si in modern technologies. Here, we report on the thermal oxidation of the 2DSEM gallium selenide (GaSe). The nanometer-thick layers are grown by molecular beam epitaxy on transparent sapphire (Al2O3) and feature a centro-symmetric polymorph of GaSe. Thermal annealing of the layers in an oxygen-rich environment promotes the chemical transformation and full conversion of GaSe into a thin layer of crystalline Ga2O3, paralleled by the formation of coherent Ga2O3/Al2O3 interfaces. Versatile functionalities are demonstrated in photon sensors based on GaSe and Ga2O3, ranging from electrical insulation to unfiltered deep ultraviolet optoelectronics, unlocking the technological potential of GaSe nanostructures and their amorphous and crystalline oxides.

A Review of Diamond Materials and Applications in Power Semiconductor Devices

Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm2, and a current density of 60 kA/cm2 already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices.

Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors

Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for fabricating a variety of semiconductor nanostructures. Since early investigations in 2000, research in this field has provided a deeper understanding of the underlying mechanisms of catalytic etching processes and enabled high control over etching conditions for diverse applications. In this Review, we present an overview of recent developments in the application of MacEtch to nanomanufacturing and processing of III-V based semiconductor materials and other materials beyond Si. We highlight the key findings and developments in MacEtch as applied to GaAs, GaN, InP, GaP, InGaAs, AlGaAs, InGaN, InGaP, SiC, β-Ga2O3, and Ge material systems. We further review a series of active and passive devices enabled by MacEtch, including light-emitting diodes (LEDs), field-effect transistors (FETs), optical gratings, sensors, capacitors, photodiodes, and solar cells. By reviewing demonstrated control of morphology, optimization of etch conditions, and catalyst-material combinations, we aim to distill the current understanding of beyond-Si MacEtch mechanisms and to provide a bank of reference recipes to stimulate progress in the field.

Probing Hyperbolic Shear Polaritons in β-Ga2O3 Nanostructures Using STEM-EELS

Phonon polaritons, quasiparticles arising from strong coupling between electromagnetic waves and optical phonons, have potential for applications in subdiffraction imaging, sensing, thermal conduction enhancement, and spectroscopy signal enhancement. A new class of phonon polaritons in low-symmetry monoclinic crystals, hyperbolic shear polaritons (HShPs), have been verified recently in β-Ga2O3 by free electron laser (FEL) measurements. However, detailed behaviors of HShPs in β-Ga2O3 nanostructures still remain unknown. Here, by using monochromatic electron energy loss spectroscopy in conjunction with scanning transmission electron microscopy, the experimental observation of multiple HShPs in β-Ga2O3 in the mid-infrared (MIR) and far-infrared (FIR) ranges is reported. HShPs in various β-Ga2O3 nanorods and a β-Ga2O3 nanodisk are excited. The frequency-dependent rotation and shear effect of HShPs reflect on the distribution of EELS signals. The propagation and reflection of HShPs in nanostructures are clarified by simulations of electric field distribution. These findings suggest that, with its tunable broad spectral HShPs, β-Ga2O3 is an excellent candidate for nanophotonic applications.

A Review of β-Ga2O3 Power Diodes

As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7-4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga's figure of merit (BFOM) of up to 3444, which is 10 and 4 times higher than that of SiC and GaN, respectively, showing great potential for application in power devices. However, the lack of effective p-type Ga2O3 limits the development of bipolar devices. Most research has focused on unipolar devices, with breakthroughs in recent years. This review mainly summarizes the research progress fora different structures of β-Ga2O3 power diodes and gives a brief introduction to their thermal management and circuit applications.

Boron deficiency decreased the root activity of Ga-exposed rice seedlings by reducing iron accumulation and increasing Ga in iron plaque

Gallium (Ga) is an emerging chemical pollutant chiefly associated with high-tech industries. Boron (B) alleviates the negative effects of toxic elements on plant growth. Thereby, the effects of B fertilization on Ga toxicity in rice seedlings was studied to clarify the role of iron plaque in the distribution of Ga, Fe, and B in Ga-treated rice seedlings in the presence or absence of B. Gallium exposure significantly reduced the biomass of rice seedlings. Boron deficiency induced a significant change in the distribution of B in Ga-treated rice seedlings compared with "Ga+B" treatments. Accumulation of Ga in roots, dithionite-citrate-bicarbonate (DCB) extracts, and shoots showed a dose-dependent manner from both +B and -B rice seedlings. Boron nutrition levels affect the distribution of Fe in roots, DCB extracts, and shoots, in which DCB-extractable Fe was significantly decreased from "Ga-B" treatments compared with "Ga+B" treatments. Root activity was significantly decreased in both Ga-exposed rice seedlings; however, B-deficient seedlings showed a severe reduction than +B rice seedlings. These results reveal that Fe plaque might be a temporary sink for B accumulation when plants are grown with proper B, wherein the re-utilization of DCB-extractable B stored in Fe plaque is mandatory for plant growth under B deficiency. Correlation analysis revealed that B deficiency decreased the root activity of Ga-exposed rice seedlings by reducing DCB-extractable Fe and increasing DCB-extractable Ga in Fe plaque. This study enhances our understanding of how B nutritional levels affect Ga toxicity in rice plants.

Response to gallium (Ga) exposure and its distribution in rice plants

Root architecture is the temporal and spatial configuration of root system in the heterogeneous matrix of soil that is prone to chemical stresses. Gallium (Ga) is among the emerging chemical pollutants that are mostly associated with high-tech industries, specifically associated with semiconductors. In view of its potential risk and increasing distribution in the environment, this study was designed to evaluate the inhibition rate, Ga distribution in different tissues, and root architecture of rice seedlings under different concentrations of Ga. We observed that 2.59, 46.7, and 168.2 mg Ga/L were minimum (EC20), medium (EC50), and maximum (EC75) effective concentrations for rice plants that corresponded to the 20, 50, and 75% inhibition on the relative growth rate, respectively. Distribution of Ga in rice tissues showed that accumulation of Ga was much higher in roots than shoots of rice seedlings, and it increased with an increase in Ga doses. Evan blue staining technique reveals that the number of damaged/dead cell was dose-dependent on Ga. Moreover, several traits associated with root system architecture demonstrating that rice root system architecture altered in response to Ga stress. Collectively, the results reveal that Ga exposure inhibited the growth and development of rice plants. This study will enhance our understanding that how different concentrations of Ga in the environment can affect plants; however, more comprehensive studies are essential to further determine plant response against Ga stress.

Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering

Ga₂O₃-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. Here, by deliberate lattice and band engineering, we construct an n-Barrier-n unipolar barrier avalanche photodetector consisting of β-Ga₂O₃/MgO/Nb:SrTiO₃ heterostructure, in which the enlarged conduction band offsets fortify the reverse breakdown and suppress the dark current while the negligible valance band offsets faciliate minority carrier flow across the heterojunction. The developed devices exhibit record-high avalanche gain up to 5.9 × 10⁵ and detectivity of 2.33 × 10¹⁶ Jones among the reported wafer-scale grown Ga₂O₃-based photodetectors, which are even comparable to the commercial photomultiplier tubes. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga₂O₃-based electronics and optoelectronics.

Gallium Oxide for Gas Sensor Applications: A Comprehensive Review

Ga₂O₃ has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present a comprehensive review on major advances achieved over the past thirty years in the field of Ga₂O₃-based gas sensors. We begin with a brief introduction of the polymorphs and basic electric properties of Ga₂O₃. Next, we provide an overview of the typical preparation methods for the fabrication of Ga₂O₃-sensing material developed so far. Then, we will concentrate our discussion on the state-of-the-art Ga₂O₃-based gas sensor devices and put an emphasis on seven sophisticated strategies to improve their gas-sensing performance in terms of material engineering and device optimization. Finally, we give some concluding remarks and put forward some suggestions, including (i) construction of hybrid structures with two-dimensional materials and organic polymers, (ii) combination with density functional theoretical calculations and machine learning, and (iii) development of optical sensors using the characteristic optical spectra for the future development of novel Ga₂O₃-based gas sensors.