Fabrication of an organic light-emitting diode (OLED) from a two-dimensional lead(II) coordination polymer

Application of a distinctly bent, trinuclear, end-to-end azide bridged, mixed valence cobalt(iii/ii/iii) complex in the fabrication of photosensitive Schottky barrier diodes

A mixed-valence trinuclear cobalt(iii)-cobalt(ii)-cobalt(iii) complex, [(μ-1,3-N3)Co3L(N3)3]·MeOH has been synthesized using a tetradentate N2O2 donor 'reduced Schiff base' ligand, H2L {1,3-bis(2-hydroxybenzylamino)2,2-dimethylpropane} and azide as anionic co-ligand. The complex has been characterised by elemental analysis, IR, UV-vis spectroscopy and single-crystal X-ray diffraction studies etc. The cobalt(iii)-cobalt(ii)-cobalt(iii) skeleton in the complex is non-linear and non-centrosymmetric. The redox behavior of the complex was studied by using Cyclic Voltammetry (CV). The complex is found to be a semiconductor material as confirmed by determining the band gap of this complex by experimental as well as theoretical studies. The band gap in the solid state has been determined experimentally. The conductivity of the synthesized complex based device improves considerably in illumination conditions from the non-illuminated conditions. The complex has also been used to fabricate Schottky barrier diodes.

Insight into charge transportation in cadmium based semiconducting organic-inorganic hybrid materials and their application in the fabrication of photosensitive Schottky devices

A coordination polymer (1) and a trinuclear complex (2) have been synthesized using a compartmental N₂O₂O₂' donor Schiff base ligand. Both complexes are characterized using different spectroscopic techniques and their structures are determined using single crystal X-ray diffraction analyses. Energies associated with different non-covalent (S⋯O chalcogen bonds, C-H⋯H-C, C-H⋯I and C-H⋯π) interactions in the solid state of both complexes have been calculated using the Turbomole program. Investigations of electrical conductivity and photosensitivity of both complexes reveal that suitable Schottky diode devices could be fabricated from both complexes. The current vs. voltage plots of the complex based devices have been used to calculate the conductivity under dark and irradiation conditions. In both complexes the charge transportation mainly occurs through space which involves the hopping process. Standard band theory has been used to compare the experimental and theoretical results of optoelectronic measurements. The calculations confirm that both are direct band gap (2.78 and 3.30 eV) semiconductors and that complex 1 exhibits a lower band gap, in line with the experimental results (3.21 and 3.43 eV in 1 and 2, respectively).

Eu3+ -tetrakis β-diketonate complexes for solid-state lighting application

Eu³⁺ -β-diketonate complexes are used, for example, in solid-state lighting (SSL) or light-converting molecular devices. However, their low emission quantum efficiency due to water molecules coordinated to Eu³⁺ and low photostability are still problems to be addressed. To overcome such challenges, we synthesized Eu³⁺ tetrakis complexes based on [Q][Eu(tfaa)₄ ] and [Q][Eu(dbm)₄ ] (Q1 = C₂₆ H₅₆ N⁺ , Q2 = C₁₉ H₄₂ N⁺ , and Q3 = C₁₇ H₃₈ N⁺ ), replacing the water molecules in the tris stoichiometry. The tetrakis β-diketonates showed desirable thermal stability for SSL and, under excitation at 390 nm, they displayed the characteristic Eu³⁺ emission in the red spectral region. The quantum efficiencies of the dbm complexes achieved values as high as 51%, while the tfaa complexes exhibited lower quantum efficiencies (28-33%), but which were superior to those reported for the tris complexes. The structures were evaluated using the Sparkle/PM7 model and comparing the theoretical and the experimental Judd-Ofelt parameters. [Q1][Eu(dbm)₄ ] was used to coat a near-UV light-emitting diode (LED), producing a red-emitting LED prototype that featured the characteristic emission spectrum of [Q1][Eu(dbm)₄ ]. The emission intensity of this prototype decreased only 7% after 30 h, confirming its high photostability, which is a notable result considering Eu³⁺ complexes, making it a potential candidate for SSL.

Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer

A nickel(II)/lead(II) coordination polymer [(NCS)Pb(H₂O)LNi(NCS)]_n {H₂L = N,N'-bis(3-methoxysalicylidene)propane-1,3-diamine} has been synthesized and characterized. The band gap (3.18 eV) calculated from Tauc's plot suggests the semiconducting nature of the complex. The material has a photosensitivity of 5.76, indicating its applicability in the fabrication of photosensitive devices. The complex has been successfully applied in a technologically challenging thin-film photosensitive Schottky device.