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Yang Y, Chen Z, Liu X, Chen X, Guo JG. Antiferromagnetic Frustration Behavior with Face-Sharing CuAs 4 Tetrahedrons in Conducting ACu 6As 3 (A = Li and Na). Inorg Chem 2024. [PMID: 39317979 DOI: 10.1021/acs.inorgchem.4c02551] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/26/2024]
Abstract
New mixed-valence copper pnictides ACu6As3 (A = Li and Na) adopt a quasi-2D structure type, featuring alkalis and [Cu6As3]- slabs along the c-axis alternatively. The face-sharing connection between CuAs4 polyhedra leads to a higher valence state for the inside Cu ions than that of Cu ions with the other connectivity way. This is confirmed by X-ray photoemission spectroscopy results. The Cu2+ with near spin 1/2 located on bilayer triangular lattice is found to exhibit a peculiar hump in magnetic susceptibility along the c-axis and, most strikingly, nearly a constant at low temperatures from 1.8 K down to 0.4 K. Besides, high hole mobilities, 68.58 and 645.16 cm2 V-1 S-1, are observed in LiCu6As3 and NaCu6As3, respectively. These compounds provide a novel material system for researching the relationship among structure, valence state, and spin correlation in frustrated lattice.
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Affiliation(s)
- Yuxin Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhaoxu Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xu Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xu Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jian-Gang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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Liu S, Duan Q, Li B, Meng J, Yang W, Liu Y, Lin YQ, Wu SQ, Lu J, Bao JK, Xiao Y, Zhao X, Mei YX, Sun Y, Tan S, Jing Q, Yu D, Zhong R, Chen Y, Zhao Y, Ren Z, Wang C, Cao GH. Superconductivity and Charge-Density-Wave-Like Transition in Th 2Cu 4As 5. J Am Chem Soc 2024; 146:8260-8268. [PMID: 38497725 DOI: 10.1021/jacs.3c13257] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/19/2024]
Abstract
We report the synthesis, crystal structure, and physical properties of a novel ternary compound, Th2Cu4As5. The material crystallizes in a tetragonal structure with lattice parameters a = 4.0639(3) Å and c = 24.8221(17) Å. Its structure can be described as an alternating stacking of fluorite-type Th2As2 layers with antifluorite-type double-layered Cu4As3 slabs. The measurement of electrical resistivity, magnetic susceptibility, and specific heat reveals that Th2Cu4As5 undergoes bulk superconducting transition at 4.2 K. Additionally, all these physical quantities exhibit anomalies at 48 K, accompanied by a sign change in the Hall coefficient, suggesting a charge-density-wave-like (CDW) phase transition. Drawing from both experimental data and band calculations, we propose that the superconducting and CDW-like phase transitions are, respectively, associated with the Cu4As3 slabs and the As plane in the Th2As2 layers.
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Affiliation(s)
- Shaohua Liu
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
| | - Qingchen Duan
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
| | - Baizhuo Li
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
- School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China
| | - Jiaojiao Meng
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
| | - Wuzhang Yang
- School of Science, Westlake University, Hangzhou 310064, P. R. China
| | - Yi Liu
- School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China
- Department of Applied Physics, Key Laboratory of Quantum Precision Measurement of Zhejiang Province, Zhejiang University of Technology, Hangzhou 310023, P. R. China
| | - Yi-Qiang Lin
- School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China
| | - Si-Qi Wu
- School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China
| | - Jiayi Lu
- School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China
| | - Jin-Ke Bao
- School of Physics and Hangzhou Key Laboratory of Quantum Matters, Hangzhou Normal University, Hangzhou 311121, P. R. China
| | - Yusen Xiao
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, P. R. China
| | - Xinyu Zhao
- School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China
| | - Yu-Xue Mei
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
| | - Yuping Sun
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
| | - Shugang Tan
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
| | - Qiang Jing
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
| | - Dan Yu
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
| | - Ruidan Zhong
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Yongliang Chen
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, P. R. China
| | - Yong Zhao
- College of Physics and Energy, Fujian Normal University, Fuzhou 350117, P. R. China
| | - Zhi Ren
- School of Science, Westlake University, Hangzhou 310064, P. R. China
| | - Cao Wang
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China
| | - Guang-Han Cao
- School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, P. R. China
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