Enhanced UV–Vis photodetector performance by optimizing interfacial charge transportation in the heterostructure by SnS and SnSe2

Recent Progress on Layered Sn and Pb-Based Mono Chalcogenides: Synthesis, Structure, Optical, and Thermoelectric Properties and Related Applications

The research on two-dimensional materials has gained significant traction due to their potential for thermoelectric, optical, and other properties. The development of two-dimensional (2D) nanostructured-based TE generators and photodetectors has shown promising results. Over the years, researchers have played a crucial role in advancing this field, enhancing the properties of 2D materials through techniques such as doping, alloying, and various growth methods. Among these materials, black phosphorus, transition metal dichalcogenides, graphene, and IVA-VIA compounds stand out for their remarkable electronic, mechanical, and optical properties. This study presents a comprehensive review of the progress in the field, focusing on IVA-VIA compounds and their applications in TE and photodetector technologies. We summarize recent advancements in enhancing these materials' TE and optical properties and provide an overview of various synthesis techniques for their fabrication. Additionally, we highlight their potential applications as photodetectors in the infrared spectrum. This comprehensive review aims to equip researchers with a deep understanding of the TE and optical properties of 2DMs and their potential applications and to inspire further advancements in this field of research.

Air-stable self-powered photodetector based on TaSe2/WS2/TaSe2 asymmetric heterojunction with surface self-passivation

Two-dimensional (2D) transition metal dichalcogenides are highly suitable for constructing junction photodetectors because of their suspended bond-free surface and adjustable bandgap. Additional stable layers are often used to ensure the stability of photodetectors. Unfortunately, they often increase the complexity of preparation and cause performance degradation of devices. Considering the self-passivation behavior of TaSe2, we designed and fabricated a novel self-powered TaSe2/WS2/TaSe2 asymmetric heterojunction photodetector. The heterojunction photodetector shows excellent photoelectric performance and photovoltaic characteristics, achieving a high responsivity of 292 mA/W, an excellent specific detectivity of 2.43 × 1011 Jones, a considerable external quantum efficiency of 57 %, a large optical switching ratio of 2.6 × 105, a fast rise/decay time of 43/54 μs, a high open-circuit voltage of 0.23 V, and a short-circuit current of 2.28 nA under 633 nm laser irradiation at zero bias. Moreover, the device also shows a favorable optical response to 488 and 532 nm lasers. Notably, it exhibits excellent environmental long-term stability with the performance only decreasing ∼ 5.6 % after exposed to air for 3 months. This study provides a strategy for the development of air-stable self-powered photodetectors based on 2D materials.

Direct Z-Scheme Heterostructure of Vertically Oriented SnS2 Nanosheet on BiVO4 Nanoflower for Self-Powered Photodetectors and Water Splitting

The construction of nanostructured Z-scheme heterostructure is a powerful strategy for realizing high-performance photoelectrochemical (PEC) devices such as self-powered photodetectors and water splitting. Considering the band structure and internal electric field direction, BiVO4 is a promising candidate to construct SnS2 -based heterostructure. Herein, the direct Z-scheme heterostructure of vertically oriented SnS2 nanosheet on BiVO4 nanoflower is rationally fabricated for efficient self-powered PEC photodetectors. The Z-scheme heterostructure is identified by ultraviolet photoelectron spectroscopy, photoluminescence spectroscopy, PEC measurement, and water splitting. The SnS2 /BiVO4 heterostructure shows a superior photodetection performance such as excellent photoresponsivity (10.43 mA W-1 ), fast response time (6 ms), and long-term stability. Additionally, by virtue of efficient Z-scheme charge transfer and unique light-trapping nanostructure, the SnS2 /BiVO4 heterostructure also displays a remarkable photocatalytic hydrogen production rate of 54.3 µmol cm-2 h-1 in Na2 SO3 electrolyte. Furthermore, the synergistic effect between photo-activation and bias voltage further improves the PEC hydrogen production rate of 360 µmol cm-2 h-1 at 0.8 V, which is an order of magnitude above the BiVO4 . The results provide useful inspiration for designing direct Z-scheme heterostructures with special nanostructured morphology to signally promote the performance of PEC devices.

Two dimensional NbSe2/Nb2O5 metal-semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

Two dimensional (2D) metal-semiconductor heterostructures are promising for high-performance optoelectronic devices due to fast carrier separation and transportation. Considering the superior metallic characteristics accompanied by high electrical conductivity in NbSe₂, surface oxidation provides a facile way to form NbSe₂/Nb₂O₅ metal-semiconductor heterostructures. Herein, size-dependent NbSe₂/Nb₂O₅ nanosheets were achieved by a liquid phase exfoliation method and a gradient centrifugation strategy. These NbSe₂/Nb₂O₅ heterostructure-based photodetectors show high responsivity with 23.21 μA W^-1, fast response time of millisecond magnitude, and wide band detection ability in the UV-Vis region. It is noticeable that the photocurrent density is sensitive to the surface oxygen layer due to the oxygen-sensitized photoconduction mechanism. The flexible testing of the NbSe₂/Nb₂O₅ heterostructure-based PEC-type photodetectors exhibits high photodetection performance even after bending and twisting. Beyond that, the solid-state PEC-type NbSe₂/Nb₂O₅ photodetector also achieves relatively stable photodetection and high stability. This work promotes the application of 2D NbSe₂/Nb₂O₅ metal-semiconductor heterostructures in flexible optoelectronic devices.

Direct Z-Scheme SnSe2/SnSe Heterostructure Passivated by Al2O3 for Highly Stable and Sensitive Photoelectrochemical Photodetectors

To mimic the natural photosynthesis system, a Z-scheme heterostructure is proposed as a viable and effective strategy for efficient solar energy utilization such as photocatalysis and photoelectrochemical (PEC) water splitting due to the high carrier separation efficiency, fast charge transport, strong redox, and wide light absorption. However, it remains a huge challenge to form a direct Z-scheme heterostructure due to the internal electric-field restriction and vital band-alignment at the interface. Herein, the van der Waals heterostructure based on the allotrope SnSe₂ and SnSe is designed and synthesized by a two-step vapor phase deposition method to overcome the limitation in the formation of the Z-scheme heterostructure for the first time. The Z-scheme heterostructure of SnSe₂/SnSe is confirmed by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, PEC measurement, density functional theory calculations, and water splitting. Strikingly, the PEC photodetectors based on the Z-scheme heterostructure show a synergistic effect of superior stability from SnSe and fast photoresponse from SnSe₂. As such, the SnSe₂/SnSe Z-scheme heterostructure shows a good photodetection performance in the ultraviolet to visible wavelength range. Furthermore, the photodetector shows a faster response/recovery time of 13/14 ms, a higher photosensitivity of 529.13 μA/W, and a higher detectivity of 4.94 × 10⁹ Jones at 475 nm compared with those of single components. Furthermore, the photodetection stability of the SnSe₂/SnSe is also greatly improved by a-thin-Al₂O₃-layer passivation. The results imply the promising rational design of a direct Z-scheme heterostructure with efficient charge transfer for high performance of optoelectronic devices.

Bi2 Te3 /Bi2 Se3 /Bi2 S3 Cascade Heterostructure for Fast-Response and High-Photoresponsivity Photodetector and High-Efficiency Water Splitting with a Small Bias Voltage

Large-scale multi-heterostructure and optimal band alignment are significantly challenging but vital for photoelectrochemical (PEC)-type photodetector and water splitting. Herein, the centimeter-scale bismuth chalcogenides-based cascade heterostructure is successfully synthesized by a sequential vapor phase deposition method. The multi-staggered band alignment of Bi₂ Te₃ /Bi₂ Se₃ /Bi₂ S₃ is optimized and verified by X-ray photoelectron spectroscopy. The PEC photodetectors based on these cascade heterostructures demonstrate the highest photoresponsivity (103 mA W^-1 at -0.1 V and 3.5 mAW^-1 at 0 V under 475 nm light excitation) among the previous reports based on two-dimensional materials and related heterostructures. Furthermore, the photodetectors display a fast response (≈8 ms), a high detectivity (8.96 × 10⁹ Jones), a high external quantum efficiency (26.17%), and a high incident photon-to-current efficiency (27.04%) at 475 nm. Due to the rapid charge transport and efficient light absorption, the Bi₂ Te₃ /Bi₂ Se₃ /Bi₂ S₃ cascade heterostructure demonstrates a highly efficient hydrogen production rate (≈0.416 mmol cm^-2  h^-1 and ≈14.320 µmol cm^-2  h^-1 with or without sacrificial agent, respectively), which is far superior to those of pure bismuth chalcogenides and its type-II heterostructures. The large-scale cascade heterostructure offers an innovative method to improve the performance of optoelectronic devices in the future.

Role of Alkylamines in Tuning the Morphology and Optical Properties of SnS2 Nanoparticles Synthesized by via Facile Thermal Decomposition Approach

The present study reported the synthesis of SnS₂ nanoparticles by using a thermal decomposition approach using tin chloride and thioacetamide in diphenyl ether at 200 °C over 60 min. SnS₂ nanoparticles with novel morphologies were prepared by the use of different alkylamines (namely, octylamine (OCA), dodecylamine (DDA), and oleylamine (OLA)), and their role during the synthesis was explored in detail. The synthesized SnS₂ nanostructures were characterized using an array of analytical techniques. The XRD results confirmed the formation of hexagonal SnS₂, and the crystallite size varied from 6.1 nm to 19.0 nm and from 2.5 to 8.8 nm for (100) and (011) reflections, respectively. The functional group and thermal analysis confirmed the presence of organics on the surface of nanoparticles. The FE-SEM results revealed nanoparticles, nanoplates, and flakes assembled into flower-like morphologies when dodecylamine, octylamine, and oleylamine were used as capping agents, respectively. The analysis of optical properties showed the variation in the bandgap and the concentration of surface defects on the SnS₂ nanoparticles. The role of alkylamine as a capping agent was explored and discussed in detail in this paper and the mechanism for the evolution of different morphologies of SnS₂ nanoparticles was also proposed.