Photoelectrochemical properties of anodic iron oxide layers

Morphological and semiconductive properties of the anodic oxide layers made on Fe3Al alloy by anodizing in tartaric-sulfuric acid mixture

It has recently been found that the anodizing of FeAl alloys allows the formation of iron-aluminum oxide layers with interesting semiconducting properties. However, the lack of systematic research on different anodizing regimes is hampering their full exploitation in numerous photoelectrochemical-related applications. This study address, for the first time, the systematic effect of the electrolyte composition on the formation of self-ordered oxide films by anodizing on cast Fe3Al alloy. The Fe3Al alloy was anodized in 3 electrolytes with different water-ethylene glycol (EG) ratios (pure water, 25 vol.%-EG, and 50 vol.%-EG solutions) at a constant tartaric-sulfuric acids concentration, different voltages (10-20 V) and treatment times (2-60 min). After anodizing, all anodic oxide layers were annealed at 900 °C to form semiconductive iron-aluminum crystalline phases. Conventional techniques were used to systematically ascertain the morphological (SEM/EDS, XRD, eddy-current measurements) and semiconductive (UV-VIS reflectance spectroscopy) properties of these oxide layers. The results confirmed the formation of homogeneous and self-ordered anodic oxide layers at 10 and 15 V, regardless of the electrolyte composition. Namely, anodic films formed in electrolytes containing EG showed lower pore sizes, growth rates, and film thicknesses than those anodic films formed in the aqueous-based electrolyte. The annealing post-treatment results in different Fe-Al oxides (FexOy, FeAl2O4, etc.) with superior band gap values than those for non-annealed films.

CdS-Decorated Porous Anodic SnOx Photoanodes with Enhanced Performance under Visible Light

Electrochemically generated nanoporous tin oxide films have already been studied as photoanodes in photoelectrochemical water splitting systems. However, up to now, the most significant drawback of such materials was their relatively wide band gap (ca. 3.0 eV), which limits their effective performance in the UV light range. Therefore, here, we present for the first time an effective strategy for sensitization of porous anodic SnO_x films with another narrow band gap semiconductor. Nanoporous tin oxide layers were obtained by simple one-step anodic oxidation of metallic Sn in 1 M NaOH followed by further surface decoration with CdS by the successive ionic layer adsorption and reaction (SILAR) method. It was found that the nanoporous morphology of as-anodized SnO_x is still preserved after CdS deposition. Such SnO_x/CdS photoanodes exhibited enhanced photoelectrochemical activity in the visible range compared to unmodified SnO_x. However, the thermal treatment at 200 °C before the SILAR process was found to be a key factor responsible for the optimal photoresponse of the material.