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Sun Q, Sadhu A, Lie S, Wong LH. Critical Review of Cu-Based Hole Transport Materials for Perovskite Solar Cells: From Theoretical Insights to Experimental Validation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402412. [PMID: 38767270 DOI: 10.1002/adma.202402412] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Revised: 05/17/2024] [Indexed: 05/22/2024]
Abstract
Despite the remarkable efficiency of perovskite solar cells (PSCs), long-term stability remains the primary barrier to their commercialization. The prospect of enhancing stability by substituting organic transport layers with suitable inorganic compounds, particularly Cu-based inorganic hole-transport materials (HTMs), holds promise due to their high valence band maximum (VBM) aligning with perovskite characteristics. This review assesses the advantages and disadvantages of these five types of Cu-based HTMs. Although Cu-based binary oxides and chalcogenides face narrow bandgap issues, the "chemical modulation of the valence band" (CMVB) strategy has successfully broadened the bandgap for Cu-based ternary oxides and chalcogenides. However, Cu-based ternary oxides encounter challenges with low mobility, and Cu-based ternary chalcogenides face mismatches in VBM alignment with perovskites. Cu-based binary halides, especially CuI, exhibit excellent properties such as wider bandgap, high mobility, and defect tolerance, but their stability remains a concern. These limitations of single anion compounds are insightfully discussed, offering solutions from the perspective of practical application. Future research can focus on Cu-based composite anion compounds, which merge the advantages of single anion compounds. Additionally, mixed-cation chalcogenides such as CuxM1-xS enable the customization of HTM properties by selecting and adjusting the proportions of cation M.
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Affiliation(s)
- Qingde Sun
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Anupam Sadhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Stener Lie
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Lydia Helena Wong
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
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Jiang J, You YF, Vasu D, Chen SC, Chiu TW, Prashanth G, Chen PC. Improving the p-Type CuCrO 2 Thin Film's Electrical and Optical Properties. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1000. [PMID: 36770007 PMCID: PMC9919057 DOI: 10.3390/ma16031000] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 01/13/2023] [Accepted: 01/19/2023] [Indexed: 06/18/2023]
Abstract
In this research, we studied the functional properties of CuCrO2, which is the most promising p-type transparent conductive oxide (TCO). The thin films were fabricated using a spin coating technique. The diffraction patterns were obtained with the help of X-ray diffractions, and the optical properties of absorption characteristics were studied using UV-visible absorption. The physical properties of film formation and surface morphology were analyzed using FESEM analysis. The aging properties were also analyzed with the help of various precursors with different aging times. The CuCrO2 thin films' functional properties were determined by using chelating agent and precursor solution aging times. The CuCrO2 thin films have better transmittance, resistance, figure of merit (FOM), and electrical conductivity. Moreover, the resistivity values of the CuCrO2 thin films are 7.01, 9.90, 12.54, 4.10, 2.42, and 0.35 Ω cm. The current research article covers the preparation of copper chromium delafossite thin films. These thin films can be suitable for hole transport layers in transparent optoelectronic devices.
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Affiliation(s)
- Jiaxin Jiang
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 106, Taiwan
- Institute of Materials Science and Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao East Road, Taipei 106, Taiwan
| | - Yu-Feng You
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 106, Taiwan
- Institute of Materials Science and Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao East Road, Taipei 106, Taiwan
| | - Dhanapal Vasu
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 106, Taiwan
- Institute of Materials Science and Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao East Road, Taipei 106, Taiwan
| | - Sheng-Chi Chen
- Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, New Taipei City 243, Taiwan
| | - Te-Wei Chiu
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 106, Taiwan
- Institute of Materials Science and Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao East Road, Taipei 106, Taiwan
| | - Gopi Prashanth
- Godi Energy, 12 (p), 13, 14 (p), Road No. 2, Hardware Park, Hyderabad 500005, India
| | - Po Chou Chen
- Graduate Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 106, Taiwan
- E-Current Co., Ltd., 10F.-5, No. 50, Sec. 4, Nanjing E. Rd., Songshan Dist., Taipei City 10553, Taiwan
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Lin SS, Shi Q, Dai MJ, Wang KL, Chen SC, Kuo TY, Liu DG, Song SM, Sun H. The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr 0.95-xMg 0.05]O 2 Films Deposited by Reactive Magnetron Sputtering. MATERIALS 2020; 13:ma13102376. [PMID: 32455656 PMCID: PMC7287812 DOI: 10.3390/ma13102376] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/19/2020] [Revised: 05/07/2020] [Accepted: 05/18/2020] [Indexed: 11/16/2022]
Abstract
CuCrO2 is one of the most promising p-type transparent conductive oxide (TCO) materials. Its electrical properties can be considerably improved by Mg doping. In this work, Cr-deficient CuCrO2 thin films were deposited by reactive magnetron sputtering based on 5 at.% Mg doping. The influence of Cr deficiency on the film's optoelectronic properties was investigated. As the film's composition varied, CuO impurity phases appeared in the film. The mixed valency of Cu+/Cu2+ led to an enhancement of the hybridization between the Cu3d and O2p orbitals, which further reduced the localization of the holes by oxygen. As a result, the carrier concentration significantly improved. However, since the impurity phase of CuO introduced more grain boundaries in Cu[Cr0.95-xMg0.05]O2, impeding the transport of the carrier and incident light in the film, the carrier mobility and the film's transmittance reduced accordingly. In this work, the optimal optoelectronic performance is realized where the film's composition is Cu[Cr0.78Mg0.05]O2. Its Haacke's figure of merit is about 1.23 × 10-7 Ω-1.
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Affiliation(s)
- Song-Sheng Lin
- The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China; (S.-S.L.); (Q.S.); (M.-J.D.); (H.S.)
| | - Qian Shi
- The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China; (S.-S.L.); (Q.S.); (M.-J.D.); (H.S.)
| | - Ming-Jiang Dai
- The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China; (S.-S.L.); (Q.S.); (M.-J.D.); (H.S.)
| | - Kun-Lun Wang
- Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, School of Space Science and Physics, Shandong University, Weihai 264209, China; (K.-L.W.); (S.-M.S.)
| | - Sheng-Chi Chen
- Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, Taipei 243, Taiwan
- College of Engineering, Chang Gung University, Taoyuan 333, Taiwan
- Correspondence: ; Tel.: +886-2-29089899 (ext. 4679)
| | - Tsung-Yen Kuo
- Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan;
| | - Dian-Guang Liu
- School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China;
| | - Shu-Mei Song
- Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, School of Space Science and Physics, Shandong University, Weihai 264209, China; (K.-L.W.); (S.-M.S.)
| | - Hui Sun
- The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China; (S.-S.L.); (Q.S.); (M.-J.D.); (H.S.)
- Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, School of Space Science and Physics, Shandong University, Weihai 264209, China; (K.-L.W.); (S.-M.S.)
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Ngo TNM, Palstra TTM, Blake GR. Crystallite size dependence of thermoelectric performance of CuCrO2. RSC Adv 2016. [DOI: 10.1039/c6ra08035a] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The thermoelectric performance of CuCrO2 with different particle size and morphology is influenced more by electrical resistivity than thermal conductivity.
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Affiliation(s)
- T. N. M. Ngo
- Solid State Materials for Electronics
- Zernike Institute for Advanced Materials
- University of Groningen
- 9747 AG Groningen
- The Netherlands
| | - T. T. M. Palstra
- Solid State Materials for Electronics
- Zernike Institute for Advanced Materials
- University of Groningen
- 9747 AG Groningen
- The Netherlands
| | - G. R. Blake
- Solid State Materials for Electronics
- Zernike Institute for Advanced Materials
- University of Groningen
- 9747 AG Groningen
- The Netherlands
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Ehlers G, Podlesnyak AA, Frontzek M, Freitas RS, Ghivelder L, Gardner JS, Shiryaev SV, Barilo S. A detailed study of the magnetic phase transition in CuCrO2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2013; 25:496009. [PMID: 24214902 DOI: 10.1088/0953-8984/25/49/496009] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The phase transition in CuCrO2 to an ordered magnetic state is studied with bulk measurements and elastic and inelastic neutron scattering techniques. The reported onset of spontaneous electric polarization at T = 23.5 K coincides with the appearance, on cooling, of elastic magnetic scattering. At higher temperatures long range magnetic correlations gradually develop but they are dynamic. The ground state is characterized by three-dimensional long range magnetic ordering but along the c direction the correlation length remains limited to ∼200 Å.
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Affiliation(s)
- G Ehlers
- Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831-6475, USA
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