Inhomogeneity and anisotropy of chemical bonding and thermoelectric properties of materials

On Chemical Bonding in ht-Ga3Rh and Its Effect on Structural Organization and Thermoelectric Behavior

In the course of systematic studies of intermetallic compounds Ga3TM (TM─transition metal), the compound Ga3Rh is synthesized by direct reaction of the elements at 700 °C. The material obtained is characterized as a high-temperature modification of Ga3Rh. Powder and single-crystal X-ray diffraction analyses reveal tetragonal symmetry (space group P42/mnm, No. 146) with a = 6.4808(2) Å and c = 6.5267(2) Å. Large values and strong anisotropy of the atomic displacement parameters of Ga atoms indicate essential disorder in the crystal structure. A split-position technique is applied to describe the real crystal structure of ht-Ga3Rh. Bonding analysis in ht-Ga3Rh performed on ordered models with the space groups P1̅, P42nm, and P42212 shows, besides the omnipresent heteroatomic Ga-Rh bonds in the rhombic prisms ∞3[Ga8/2Rh2], the formation of homoatomic Ga-Ga bonds bridging the Rh-Rh contacts and the absence of significant Rh-Rh bonding. These features are essential reasons for the experimentally observed disorder in the lattice. In agreement with the calculated electronic density of states, ht-Ga3Rh shows temperature-dependent electrical resistivity of a "bad metal". The very low lattice thermal conductivity of less than 0.5 W m-1 K-1 at 300 K, being lower than those for most other Ga3TM compounds, correlates with the enhanced bonding complexity.

Structure Evolution and Bonding Inhomogeneity toward High Thermoelectric Performance in Cu2CoSnS4-xSex Materials

Lightweight diamond-like structure (DLS) materials are excellent candidates for thermoelectric (TE) applications due to their low costs, eco-friendly nature, and property stability. The main obstacles restricting the energy-conversion performance by the lightweight DLS materials are high lattice thermal conductivity and relatively low carrier mobility. By investigating the anion substitution effect on the structural, microstructural, electronic, and thermal properties of Cu₂CoSnS_4-xSe_x, we show that the simultaneous enhancement of the crystal symmetry and bonding inhomogeneity engineering are effective approaches to enhance the TE performance in lightweight DLS materials. Particularly, the increase of x in Cu₂CoSnS_4-xSe_x makes the DLS structure with the ideal tetrahedral bond angles of 109.5° favorable, leading to better crystal symmetry and higher carrier mobility in samples with higher selenium content. In turn, the phonon transport in the investigated DLS materials is strongly disturbed due to the bonding inhomogeneity between anions and three sorts of cations inducing large lattice anharmonicity. The increase of Se content in Cu₂CoSnS_4-xSe_x only intensified this effect resulting in a lower lattice component of the thermal conductivity (κ_L) for Se-rich samples. As a result of the enhanced power factor S²ρ^-1 and the low κ_L, the dimensionless thermoelectric figure of merit ZT achieves a high value of 0.75 for Cu₂CoSnSe₄ DLS material. This work demonstrates that crystal symmetry and bonding inhomogeneity play an important role in the transport properties of DLS materials and provide a path for the development of new perspective materials for TE energy conversion.

Electronic Configurations of 3d Transition-Metal Compounds Using Local Structure and Neural Networks

Machine learning (ML) methods extract statistical relationships between inputs and results. When the inputs are solid-state crystal structures, structure-property relationships can be obtained. In this work, we investigate whether a simple neural network is able to learn the 3d orbital occupations for the transition-metal (TM) centers in crystalline inorganic solid-state compounds using only the local structure around the transition-metal centers described by rotationally invariant fingerprints based on spherical harmonics and one-hot elemental encoding. A multilayer neural network trained on density functional theory (DFT) results of about 1800 samples was developed and showed good performance in predicting the TM orbital occupations (for both spin channels). We study in detail how the local structure affects the predictions of the local properties and how they provide physical insights for the design of a future machine learning model for materials chemistry. The proposed ML method is illustrated in practical application by predicting local magnetic moments of the transition-metal atoms in a full set of inorganic structures with large unit cells. Although less accurate compared to the experimental data, the ML results compared well with the DFT results, suggesting the feasibility of electronic property prediction based only on structure input.

Lone-Pair-Like Interaction and Bonding Inhomogeneity Induce Ultralow Lattice Thermal Conductivity in Filled β-Manganese-Type Phases

Finding a way to interlink heat transport with the crystal structure and order/disorder phenomena is crucial for designing materials with ultralow lattice thermal conductivity. Here, we revisit the crystal structure and explore the thermoelectric properties of several compounds from the family of the filled β-Mn-type phases M _2/n ⁿ⁺Ga₆Te₁₀ (M = Pb, Sn, Ca, Na, Na + Ag). The strongly disturbed thermal transport observed in the investigated materials originates from a three-dimensional Te-Ga network with lone-pair-like interactions, which results in large variations of the Ga-Te and M-Te interatomic distances and substantial anharmonic effects. In the particular case of NaAgGa₆Te₁₀, the additional presence of different cations leads to bonding inhomogeneity and strong structural disorder, resulting in a dramatically low lattice thermal conductivity (∼0.25 Wm^-1 K^-1 at 298 K), being the lowest among the reported β-Mn-type phases. This study offers a way to develop materials with ultralow lattice thermal conductivity by considering bonding inhomogeneity and lone-pair-like interactions.

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi2Te3-xSex Alloys

Bi2Te3-based alloys are the main materials for the construction of low- and medium-temperature thermoelectric modules. In this work, the microstructure and thermoelectric properties of Cl-doped Bi2Te3-xSex alloys were systematically investigated considering the high anisotropy inherent in these materials. The prepared samples have a highly oriented microstructure morphology, which results in very different thermal transport properties in two pressing directions. To accurately separate the lattice, electronic, and bipolar components of the thermal conductivity over the entire temperature range, we employed a two-band Kane model to the Cl-doped Bi2Te3-xSex alloys. It was established that Cl atoms act as electron donors, which tune the carrier concentration and effectively suppress the minority carrier transport in Bi2Te3-xSex alloys. The estimated value of the lattice thermal conductivity was found to be as low as 0.15 Wm-1 K-1 for Bi2Te3-x-ySexCly with x = 0.6 and y = 0.015 at 673 K in parallel to the pressing direction, which is among the lowest values reported for crystalline materials. The large reduction of the lattice thermal conductivity in both pressing directions for the investigated Bi2Te3-xSex alloys is connected with the different polarities of the Bi-(Te/Se)1 and Bi-(Te/Se)2 bonds, while the lone-pair (Te/Se) interactions are mainly responsible for the extremely low lattice thermal conductivity in the parallel direction. As a result of the enhanced power factor, suppressed bipolar conduction, and ultralow lattice thermal conductivity, a maximum ZT of 1.0 at 473 K has been received in the Bi2Te2.385Se0.6Cl0.015 sample.

Half-Heusler-like compounds with wide continuous compositions and tunable p- to n-type semiconducting thermoelectrics

Half-Heusler and full-Heusler compounds were considered as independent phases with a natural composition gap. Here we report the discovery of TiRu_1+xSb (x = 0.15 ~ 1.0) solid solution with wide homogeneity range and tunable p- to n-type semiconducting thermoelectrics, which bridges the composition gap between half- and full-Heusler phases. At the high-Ru end, strange glass-like thermal transport behavior with unusually low lattice thermal conductivity (~1.65 Wm⁻¹K⁻¹ at 340 K) is observed for TiRu_1.8Sb, being the lowest among reported half-Heusler phases. In the composition range of 0.15 < x < 0.50, TiRu_1+xSb shows abnormal semiconducting behaviors because tunning Ru composition results in band structure change and carrier-type variation simultaneously, which seemingly correlates with the localized d electrons. This work reveals the possibility of designing fascinating half-Heusler-like materials by manipulating the tetrahedral site occupancy, and also demonstrates the potential of tuning crystal and electronic structures simultaneously to realize intriguing physical properties.

Half-and full-Heusler compounds are considered as independent phases with a natural composition gap. Here the authors report the discovery of half-Heusler-like TiRu_1+xSb with wide continuous compositions falling in the gap region and tunable p-to n-type semiconducting thermoelectrics.

The Intermetallic Semiconductor ht-IrGa3: a Material in the in-Transformation State

The compound IrGa₃ was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group P4₂ /mnm, No. 136) with a = 6.4623(1) Å and c = 6.5688(2) Å and reveals strong disorder in the crystal structure, reflected in the huge values and anisotropy of the atomic displacement parameters. A model for the real crystal structure of ht-IrGa₃ is derived by the split-position approach from the single-crystal X-ray diffraction data and confirmed by an atomic-resolution transmission electron microscopy study. Temperature-dependent electrical resistivity measurements evidence semiconductor behavior with a band gap of 30 meV. A thermoelectric characterization was performed for ht-IrGa₃ and for the solid solution IrGa_3-x Zn _x .

Chemical Bonding Governs Complex Magnetism in MnPt5P

Subtle changes in chemical bonds may result in dramatic revolutions in magnetic properties in solid-state materials. MnPt5P, a derivative of the rare-earth-free ferromagnetic MnPt5As, was discovered and is presented in this work. MnPt5P was synthesized, and its crystal structure and chemical composition were characterized by X-ray diffraction as well as energy-dispersive X-ray spectroscopy. Accordingly, MnPt5P crystallizes in the layered tetragonal structure with the space group P4/mmm (No. 123), in which the face-shared Mn@Pt12 polyhedral layers are separated by P layers. In contrast to the ferromagnetism observed in MnPt5As, the magnetic properties measurements on MnPt5P show antiferromagnetic ordering occurs at ∼188 K with a strong magnetic anisotropy in and out of the ab-plane. Moreover, a spin-flop transition appears when a high magnetic field is applied. An A-type antiferromagnetic structure was obtained from the analysis of powder neutron diffraction (PND) patterns collected at 150 and 9 K. Calculated electronic structures imply that hybridization of Mn-3d and Pt-5d orbitals is critical for both the structural stability and observed magnetic properties. Semiempirical molecular orbitals calculations on both MnPt5P and MnPt5As indicate that the lack of 4p character on the P atoms at the highest occupied molecular orbital (HOMO) in MnPt5P may cause the different magnetic behavior in MnPt5P compared to MnPt5As. The discovery of MnPt5P, along with our previously reported MnPt5As, parametrizes the end points of a tunable system to study the chemical bonding which tunes the magnetic ordering from ferromagnetism to antiferromagnetism with the strong spin-orbit coupling (SOC) effect.

Metallic alloys at the edge of complexity: structural aspects, chemical bonding and physical properties

Complex metallic alloys belong to the vast family of intermetallic compounds and are hallmarked by extremely large unit cells and, in many cases, extensive crystallographic disorder. Early studies of complex intermetallics were focusing on the elucidation of their crystal structures and classification of the underlying building principles. More recently, ab initio computational analysis and detailed examination of the physical properties have become feasible and opened new perspectives for these materials. The present review paper provides a summary of the literature data on the reported compositions with exceptional structural complexity and their properties, and highlights the factors leading to the emergence of their crystal structures and the methods of characterization and systematization of these compounds.

Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb

Thermoelectric properties of the half-Heusler phase ScNiSb (space group F 4 ¯ 3m) were studied on a polycrystalline single-phase sample obtained by arc-melting and spark-plasma-sintering techniques. Measurements of the thermopower, electrical resistivity, and thermal conductivity were performed in the wide temperature range 2-950 K. The material appeared as a p-type conductor, with a fairly large, positive Seebeck coefficient of about 240 μV K^-1 near 450 K. Nevertheless, the measured electrical resistivity values were relatively high (83 μΩm at 350 K), resulting in a rather small magnitude of the power factor (less than 1 × 10^-3 W m^-1 K^-2) in the temperature range examined. Furthermore, the thermal conductivity was high, with a local minimum of about 6 W m^-1 K^-1 occurring near 600 K. As a result, the dimensionless thermoelectric figure of merit showed a maximum of 0.1 at 810 K. This work suggests that ScNiSb could be a promising base compound for obtaining thermoelectric materials for energy conversion at high temperatures.