The Intermetallic Semiconductor ht-IrGa3: a Material in the in-Transformation State

The compound IrGa₃ was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group P4₂ /mnm, No. 136) with a = 6.4623(1) Å and c = 6.5688(2) Å and reveals strong disorder in the crystal structure, reflected in the huge values and anisotropy of the atomic displacement parameters. A model for the real crystal structure of ht-IrGa₃ is derived by the split-position approach from the single-crystal X-ray diffraction data and confirmed by an atomic-resolution transmission electron microscopy study. Temperature-dependent electrical resistivity measurements evidence semiconductor behavior with a band gap of 30 meV. A thermoelectric characterization was performed for ht-IrGa₃ and for the solid solution IrGa_3-x Zn _x .

Field-induced transition within the superconducting state of CeRh2As2

Materials with multiple superconducting phases are rare. Here, we report the discovery of two-phase unconventional superconductivity in CeRh₂As₂ Using thermodynamic probes, we establish that the superconducting critical field of its high-field phase is as high as 14 tesla, even though the transition temperature is only 0.26 kelvin. Furthermore, a transition between two different superconducting phases is observed in a c axis magnetic field. Local inversion-symmetry breaking at the cerium sites enables Rashba spin-orbit coupling alternating between the cerium sublayers. The staggered Rashba coupling introduces a layer degree of freedom to which the field-induced transition and high critical field seen in experiment are likely related.

Structural stability and thermoelectric performance of high quality synthetic and natural pyrites (FeS2)

Single crystalline pyrite of high quality reveals good thermal- and bad electrical conductivities resulting in poor thermoelectric performance.

Structural investigations on YbRh2Si2: from the atomic to the macroscopic length scale

YbRh2Si2 has advanced to a prototype material for investigating physics related to the Kondo effect. An optimization of the synthesis resulted in single crystals of extraordinary crystalline quality. At the atomic scale, we utilize scanning tunneling microscopy to study the topography of cleaved single crystals. A structural and chemical analysis was conducted by highly accurate x-ray diffraction and wavelength dispersive x-ray spectroscopy measurements. The latter indicate a homogeneity range of the YbRh2Si2 phase between approximately 40.0–40.2 at.% Rh. For our high-quality samples the number of defects found on the atomic scale (of the order of 0.3% of the visible lattice sites) is in quantitative agreement with a very small off-stoichiometry within this homogeneity range. Comparing our results for these samples allows an assignment of the structural defects observed at the cleaved surfaces to Rh occupying Si sites and, even less numerous Si in Rh sites. Such an analysis is hampered for samples of lesser quality, but there seem to be numerous empty Si-sites. Based on these observations the results of scanning tunneling spectroscopy can be analyzed in further detail and provide insight into the Kondo physics.

Crystal structure of tetraytterbium septarhodium hexaantimony, Yb4Rh7Sb6

Rh7Sb6Yb4, Im3̅m (no. 229), a = 8.6524(2) Å, V = 647.8 Å3, Z = 2, Rgt(F) = 0.011, wRref(F2) = 0.019, T = 293 K.

Refinement of the crystal structure of europium digallide, EuGa2

EuGa2, orthorhombic, Imma (no. 74), a = 4.6459(3) Å, b = 7.6255(5) Å, c = 7.6379(3) Å, V = 270.6 Å3, Z = 4, Rgt(F) = 0.017, wRref(F) = 0.023, T = 293 K.