Patterned electromagnetic alignment of magnetic nanowires

Site-selective core/shell deposition of tin on multi-segment nanowires for magnetic assembly and soldered interconnection

The field of nanotechnology continues to grow with the ongoing discovery and characterization of novel nanomaterials with unconventional size-dependent properties; however, the ability to apply modern manufacturing strategies for practical device design of these nanoscale structures is significantly limited by their small size. Although interconnection has been previously demonstrated between nanoscale components, such approaches often require the use of expensive oxidation-resistant noble metal materials and time-consuming or untargeted strategies for welded interconnection such as laser ablation or plasmonic resonance across randomly oriented component networks. In this work, a three-segment gold-nickel-gold nanowire structure is synthesized using templated electrodeposition and modified via monolayer-directed aqueous chemical reduction of tin solder selectively on the gold segments. This core/shell nanowire structure is capable of directed magnetic assembly tip-to-tip and along substrate pads in network orientation. Upon infrared heating in a flux vapor atmosphere, the solder payload melts and establishes robust and highly conductive wire-wire joints. The targeted solder deposition strategy has been applied to various other multi-segment gold/nickel nanowire configurations and other metallic systems to demonstrate the capability of the approach. This core/shell technique of pre-loading magnetically active nanowires with solder material simplifies the associated challenges of size-dependent component orientation in the manufacture of nanoscale electronic devices.

Self-assembly, alignment, and patterning of metal nanowires

Armed with the merits of one-dimensional nanostructures (flexibility, high aspect ratio, and anisotropy) and metals (high conductivity, plasmonic properties, and catalytic activity), metal nanowires (MNWs) have stood out as a new class of nanomaterials in the last two decades. They are envisaged to expedite significantly and even revolutionize a broad spectrum of applications related to display, sensing, energy, plasmonics, photonics, and catalysis. Compared with disordered MNWs, well-organized MNWs would not only enhance the intrinsic physical and chemical properties, but also create new functions and sophisticated architectures of optoelectronic devices. This paper presents a comprehensive review of assembly strategies of MNWs, including self-assembly for specific structures, alignment for anisotropic constructions, and patterning for precise configurations. The technical processes, underlying mechanisms, performance indicators, and representative applications of these strategies are described and discussed to inspire further innovation in assembly techniques and guide the fabrication of optoelectrical devices. Finally, a perspective on the critical challenges and future opportunities of MNW assembly is provided.

Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics

Ultrathin silicon nanowires (SiNWs) are ideal 1D channels to construct high performance nanoelectronics and sensors. We here report on a high-density catalytic growth of orderly ultrathin SiNWs, with diameter down toDnw=27±2nmand narrow NW-to-NW spacing of onlySnw ∼80 nm, without the use of high-resolution lithography. This has been accomplished via a terrace-confined strategy, where tiny indium (In) droplets move on sidewall terraces to absorb precoated amorphous Si layer as precursor and produce self-aligned SiNW array. It is found that, under proper parameter control, a tighter terrace-step confinement can help to scale the dimensions of the SiNW array down to the extremes that have not been reported before, while maintaining still a stable guiding growth over complex contours. Prototype SiNW field effect transistors demonstrate a highI_on/I_offcurrent ratio ∼10⁷, low leakage current of ∼0.3 pA and steep subthreshold swing of 220 mV dec^-1. These results highlight the unexplored potential of catalytic growth in advanced nanostructure fabrication that is highly relevant for scalable SiNW logic and sensor applications.

Planar Growth, Integration, and Applications of Semiconducting Nanowires

Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.

A 3-D NanoMagnetoElectrokinetic model for ultra-high precision assembly of ferromagnetic NWs using magnetic-field assisted dielectrophoresis

This report presents a three-dimensional (3-D) magnetoelectrokinetic model to investigate a new approach to magnetic-field assisted dielectrophoresis for ultra-high precision and parallel assembly of ferromagnetic Ni nanowires (NWs) on silicon chips. The underlying assembly methodology relies on a combination of electric and magnetic fields to manipulate single nanowires from a colloidal suspension and yield their assembly on top of electrodes with better than 25 nm precision. The electric fields and the resultant dielectrophoretic forces are generated through the use of patterned gold nanoelectrodes, and deliver long-range forces that attract NWs from farther regions of the workspace and bring them in proximity to the nanoelectrodes. Next, magnetic-fields generated by cobalt magnets, which are stacked on top of the gold nanoelectrodes at their center and pre-magnetized using external magnetic fields, deliver short range forces to capture the nanowires precisely on top of the nanomagnets. The 3-D NanoMagnetoElectrokinetic model, which is built using a finite element code in COMSOL software and with further computations in MATLAB, computes the trajectory and final deposition location as well as orientation for all possible starting locations of a Ni NW within the assembly workspace. The analysis reveals that magnetic-field assisted dielectrophoresis achieves ultra-high precision assembly of NWs on top of the cobalt nanomagnets from a 42% larger workspace volume as compared to pure dielectrophoresis and thereby, establishes the benefits of adding magnetic fields to the assembly workspace. Furthermore, this approach is combined with a strategy to confine the suspension within the reservoir that contains a high density of favorable NW starting locations to deliver high assembly yields for landing NWs on top of contacts that are only twice as wide as the NWs.

Magnetic-field assisted dielectrophoresis delivers ultra-high precision assembly of single nanowires.