Optically controlled field effect transistors based on photochromic spiropyran and fullerene C60 films

Hybrid Molecules Based on Fullerene C60 and Dithienylethenes. Synthesis and Photochromic Properties. Optically Controlled Organic Field-Effect Transistors

Hybrid molecules based on fullerene C₆₀ and dithienylethene and its perfluorinated analog not inferior in the efficiency of phototransformations to the initial photochromic compounds were synthesized for the first time. The resulting pyrrolidinofullerenes containing photochromic moieties were used to fabricate organic field-effect transistors (OFETs) with output and transfer characteristics ten times exceeding similar characteristics of devices based on staring dithienylethenes. It was found that OFETs based on hybrid molecules with dithienylethenes are four times less efficient than devices based on hybrid molecules with perfluorinated analogs.

Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate

Photonic transistor memory has received increasing attention as next-generation optoelectronic devices for light fidelity (Li-Fi) application due to the attractive advantages of ultra-speed, high security, and low power consumption. However, most transistor-type photonic memories developed to date still rely on electrical bias for operation, imposing certain limits on data transmission efficiency and energy consumption. In this study, the dual manipulation of "photo-writing" and "photo-erasing" of a novel photonic transistor memory is successfully realized by cleverly utilizing the complementary light absorption between the photoactive material, n-type BPE-PTCDI, in the active channel and the hybrid floating gate, CH₃NH₃PbBr₃/poly(2-vinylpyridine). The fabricated device not only can be operated under the full spectrum but also shows stable switching cycles of photo-writing (PW)-reading (R)-photo-erasing (PE)-reading (R) (PW-R-PE-R) with a high memory ratio of ∼10⁴, and the memory characteristics possess a stable long-term retention of >10⁴ s. Notably, photo-erasing only requires 1 s light illumination. Due to the fully optical functionality, the rigid gate electrode is removed and a novel two-terminal flexible photonic memory is fabricated. The device not only exhibits stable electrical performance after 1000 bending cycles but also manifests a multilevel functional behavior, demonstrating a promising potential for the future development of photoactive electronic devices.