Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM

Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

Semiconductor nanowires are considered as one of the most promising candidates for next-generation devices due to their unique quasi-one-dimensional structures and novel physical properties. In recent years, advanced heterostructures have been developed by combining nanowires with low-dimensional structures such as quantum wells, quantum dots, and two-dimensional materials. Those heterodimensional structures overcome the limitations of homogeneous nanowires and show great potential in high-performance nano-optoelectronic devices. In this review, we summarize and discuss recent advances in fabrication, properties and applications of nanowire heterodimensional structures. Major heterodimensional structures including nanowire/quantum well, nanowire/quantum dot, and nanowire/2D-material are studied. Representative optoelectronic devices including lasers, single photon sources, light emitting diodes, photodetectors, and solar cells are introduced in detail. Related prospects and challenges are also discussed.

Recent Advances in the Growth and Compositional Modelling of III-V Nanowire Heterostructures

Nanowire heterostructures offer almost unlimited possibilities for the bandgap engineering and monolithic integration of III-V photonics with Si electronics. The growth and compositional modelling of III-V nanowire heterostructures provides new insight into the formation mechanisms and assists in the suppression of interfacial broadening and optimization of optical properties. Different models have been proposed in the past decade to calculate the interfacial profiles in axial nanowire heterostructures mainly grown by molecular beam epitaxy and metal-organic vapour phase epitaxy. Based on various assumptions, existing models have different sets of parameters and can yield varying results and conclusions. By focusing on deterministic models based on classical nucleation theory and kinetic growth theory of III-V ternary monolayers in nanowires, we summarize recent advancements in the modelling of axial heterostructures in III-V nanowires, describe and classify the existing models, and determine their applicability to predictive modelling and to the fitting of the available experimental data. In particular, we consider the coordinate-dependent generalizations of the equilibrium, nucleation-limited, kinetic, and regular growth models to make interfacial profiles across axial heterostructures in different III-V nanowires. We examine the factors influencing the interfacial abruptness, discuss the governing parameters, limitations, and modelling of particular material systems, and highlight the areas that require further research.

Element specific atom counting for heterogeneous nanostructures: Combining multiple ADF STEM images for simultaneous thickness and composition determination

In this paper, a methodology is presented to count the number of atoms in heterogeneous nanoparticles based on the combination of multiple annular dark field scanning transmission electron microscopy (ADF STEM) images. The different non-overlapping annular detector collection regions are selected based on the principles of optimal statistical experiment design for the atom-counting problem. To count the number of atoms, the total intensities of scattered electrons for each atomic column, the so-called scattering cross-sections, are simultaneously compared with simulated library values for the different detector regions by minimising the squared differences. The performance of the method is evaluated for simulated Ni@Pt and Au@Ag core-shell nanoparticles. Our approach turns out to be a dose efficient alternative for the investigation of beam-sensitive heterogeneous materials as compared to the combination of ADF STEM and energy dispersive X-ray spectroscopy.

Compositional analysis of oxide-embedded III-V nanostructures

Nanowire growth enables creation of embedded heterostructures, where one material is completely surrounded by another. Through materials-selective post-growth oxidation it is also possible to combine amorphous oxides and crystalline, e.g. III-V materials. Such oxide-embedded structures pose a challenge for compositional characterization through transmission electron microscopy since the materials will overlap in projection. Furthermore, materials electrically isolated by an embedding oxide are more sensitive to electron beam-induced alterations. Methods that can directly isolate the embedded material, preferably at reduced electron doses, will be required in this situation. Here, we analyse the performance of two such techniques-local lattice parameter measurements from high resolution micrographs and bulk plasmon energy measurements from electron energy loss spectra-by applying them to analyse InP-AlInP segments embedded in amorphous aluminium oxide. We demonstrate the complementarity of the two methods, which show an overall excellent agreement. However, in regions with residual strain, which we analyse through molecular dynamics simulations, the two techniques diverge from the true value in opposite directions.

Assembling your nanowire: an overview of composition tuning in ternary III-V nanowires

The ability to grow defect-free nanowires in lattice-mismatched material systems and to design their properties has made them ideal candidates for applications in fields as diverse as nanophotonics, nanoelectronics and medicine. After studying nanostructures consisting of elemental and binary compound semiconductors, scientists turned their attention to more complex systems-ternary nanowires. Composition control is key in these nanostructures since it enables bandgap engineering. The use of different combinations of compounds and different growth methods has resulted in numerous investigations. The aim of this review is to present a survey of the material systems studied to date, and to give a brief overview of the issues tackled and the progress achieved in nanowire composition tuning. We focus on ternary III _x III_1-x V nanowires (AlGaAs, AlGaP, AlInP, InGaAs, GaInP and InGaSb) and IIIV _x V_1-x nanowires (InAsP, InAsSb, InPSb, GaAsP, GaAsSb and GaSbP).

The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires

Precise control and broad tunability of the growth parameters are essential in engineering the optical and electrical properties of semiconductor nanowires (NWs) to make them suitable for practical applications. To this end, we report the effect of As species, namely As₂ and As₄, on the growth of self-catalyzed GaAs based NWs. The role of As species is further studied in the presence of Te as n-type dopant in GaAs NWs and Sb as an additional group V element to form GaAsSb NWs. Using As₄ enhances the growth of NWs in the axial direction over a wide range of growth parameters and diminishes the tendency of Te and Sb to reduce the NW aspect ratio. By extending the axial growth parameter window, As₄ allows growth of GaAsSb NWs with up to 47% in Sb composition. On the other hand, As₂ favors sidewall growth which enhances the growth in the radial direction. Thus, the selection of As species is critical for tuning not only the NW dimensions, but also the incorporation mechanisms of dopants and ternary elements. Moreover, the commonly observed dependence of twinning on Te and Sb remains unaffected by the As species. By exploiting the extended growth window associated with the use of As_4, enhanced Sb incorporation and optical emission up to 1400 nm wavelength range is demonstrated. This wavelength corresponds to the telecom E-band, which opens new prospects for this NW material system in future telecom applications while simultaneously enabling their integration to the silicon photonics platform.

Electron channelling: challenges and opportunities for compositional analysis of nanowires by TEM

Energy dispersive x-ray spectroscopy in a transmission electron microscope is often the first method employed to characterize the composition of nanowires. Ideally, it should be accurate and sensitive down to fractions of an atomic percent, and quantification results are often reported as such. However, one can often get substantial errors in accuracy even though the precision is high: for nanowires it is common for the quantified V/III atomic ratios to differ noticeably from 1. Here we analyse the origin of this systematic error in accuracy for quantification of the composition of III-V nanowires. By varying the electron illumination direction, we find electron channelling to be the primary cause, being responsible for errors in quantified V/III atomic ratio of 50%. Knowing the source of the systematic errors is required for applying appropriate corrections. Lastly, we show how channelling effects can provide information on the crystallographic position of dopants.

Differential electron scattering cross-sections at low electron energies: The influence of screening parameter

For quantitative electron microscopy the comparison of measured and simulated data is essential. Monte Carlo (MC) simulations are well established to calculate the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) intensities on a non-atomic scale. In this work we focus on the importance of the screening parameter in differential screened Rutherford cross-sections for MC simulations and on the contribution of the screening parameter to the atomic-number dependence of the HAADF-STEM intensity at electron energies ≤ 30 keV. Materials investigated were chosen to cover a wide range of atomic numbers Z to study the Z dependence of the screening parameter. Comparison of measured and simulated HAADF-STEM intensities with different screening parameters known from the literature were tested and failed to generally describe the experimental data. Hence, the screening parameter was adapted to obtain the best match between experimental and MC-simulated HAADF-STEM intensities. The Z dependence of the HAADF-STEM intensity was derived.

Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications

Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As-Sb in the near- and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As-Sb NW-based photodetectors and light emitters is also given.

Influence of the crosstalk on the intensity of HAADF-STEM images of quaternary semiconductor materials

The influence of the neighbouring atomic-columns in determining the composition at atomic column scale of quaternary semiconductor compounds, using simulated HAADF-STEM images is evaluated. The InAlAsSb alloy, a promising material in the photovoltaic field, is considered. We find that the so called 'crosstalk' effect plays an important role for the aimed compositional determination. The intensity transfer is larger from neighbouring atomic columns with higher average Z, and towards atomic columns with smaller Z. Our results show that in order to obtain precise information on the column composition, the HAADF-STEM intensities of both columns need to be taken into account simultaneously.

Assessment of heavy metal contamination in sediment at Sukinda ultramafic complex using HAADF-STEM analysis

The Sukinda ultramafic complex in Odisha has the largest chromite reserve in India. Sediment derived from ultramafic rocks has been enriched with various metals. Further, mining activities enhance the influx of metals into sediment by dumping mine overburden and tailings in the open area. Metal concentration in sediment is found in order of Cr_Total(Cr) > Mn > Ni > Co > Zn > Cu with average concentration 26,778 mg/kg, 3098 mg/kg, 1813 mg/kg, 184 mg/kg, 116 mg/kg and 44 mg/kg respectively. Concentration of Cr(VI) varies from 5.25 to 26.47 mg/L with an average of 12.27 mg/L. Based on various pollution indices, it is confirmed that the area is severely contaminated. Nano-scale goethite, kaolinite, clinochlore and chromite have been identified and have high concentration of Cr, Co and Ni. Goethite has shown maximum metal retention potential as deciphered by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The HAADF-STEM mapping and principal component analysis indicate that Cr and Co mostly derived from chromite whereas Ni and Zn are derived from serpentine. Later, these metals co-precipitate and/or adsorbed onto the goethite and clay minerals. Fractionation study of metals confirms that Cu is the most mobile element followed by Zn. However, at low pH condition Ni is mobilized and likely to be bioavailable. Though Cr mostly occurs in residual fraction but as its concentration is very high, a small proportion of exchangeable fraction contributes significantly in terms of its bioavailability. Thus bioavailable Cr can pose severe threat to the environment in the Sukinda ultramafic complex.

Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p-n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.