Effects of electron donating and accepting moieties on electrical memory behaviors of polymers

Approaching the Zero-Power Operating Limit in a Self-Coordinated Organic Protonic Synapse

High-performance artificial synapse with nonvolatile memory and low power consumption is a perfect candidate for brainoid intelligence. Unfortunately, due to the energy barrier paradox between ultra-low power and nonvolatile modulation of device conductances, it is still a challenge at the moment to construct such ideal synapses. Herein, a proton-reservoir type 4,4',4″,4'''-(Porphine-5,10,15,20-tetrayl) tetrakis (benzenesulfonic acid) (TPPS) molecule and fabricated organic protonic memristors with device width of 10 µm to 100 nm is synthesized. The occurrence of sequential proton migration and interfacial self-coordinated doping will introduce new energy levels into the molecular bandgap, resulting in effective and nonvolatile modulation of device conductance over 64 continuous states with retention exceeding 30 min. The power consumptions of modulating and reading the device conductance approach the zero-power operating limits, which range from 16.25 pW to 2.06 nW and 6.5 fW to 0.83 pW, respectively. Finally, a robust artificial synapse is successfully demonstrated, showing spiking-rate-dependent plasticity (SRDP) and spiking-timing-dependent plasticity (STDP) characteristics with ultra-low power of 0.66 to 0.82 pW, as well as 100 long-term depression (LTD)/potentiation (LTP) cycles with 0.14%/0.30% weight variations.

Conjugated and Non-conjugated Polymers Containing Two-Electron Redox Dihydrophenazines for Lithium-Organic Batteries

Organic p-type cathode materials have recently attracted increasing attention due to their higher redox potentials and rate capabilities in comparison to n-type cathodes. However, most of the p-type cathodes based on one-electron redox still suffer from limited stability and low specific capacity (<150 mAh g^-1 ). Herein, two polymers, conjugated poly(diethyldihydrophenazine vinylene) (CPP) and non-conjugated poly(diethyldihydrophenazine ethylidene) (NCPP) containing two-electron redox dihydrophenazine, have been developed as p-type cathode materials. It is experimentally and theoretically found that the conjugated linkage among the redox centers in polymer CPP is more favorable for the effective charge delocalization on the conjugated polymer backbone and the sufficient oxidation in the higher potential region (3.3-4.2 V vs. Li/Li⁺ ). Consequently, the CPP cathode displays a higher reversible specific capacity of 184 mAh g^-1 with excellent cycling stability.

Newly Found Digital Memory Characteristics of Pyrrolidone- and Succinimide-Based Polymers

This study reports for the first time the excellent nonvolatile and volatile digital memory characteristics of polymers bearing 2-pyrrolidone and succinimide moieties. A series of new polymers is synthesized from poly(ethylene-alt-maleic anhydride) and four alcohol derivatives with and without 2-pyrrolidone and succinimide moieties. All polymers, including polyvinylpyrrolidone, are found to be thermally stable up to 195 °C or higher, and characterized regarding their molecular orbital energy levels, bandgap, and resistive digital memory behaviors. Excitingly, the polymers bearing either 2-pyrrolidone or succinimide moiety demonstrate p-type digital memory behaviors with high ON/OFF current ratios and long reliabilities. Nonvolatile digital memory performance is achieved over the film thickness range of 10-80 nm, whereas volatile digital memory is demonstrated over a much narrower range of film thickness. All digital memory performances can be originated from the 2-pyrrolidone and succinimide moieties possessing high affinity and stabilization power to charges via charge traps and transformations based on a hopping conduction process. Hence, these new polymers are suitable for the production of high-performance p-type nonvolatile and volatile digital memory devices. Moreover, 2-pyrrolidone and succinimide can be used as new and economical electroactive building blocks for the development of advanced digital memory materials.