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Bhat VJ, Vegesna SV, Kiani M, Zhao X, Blaschke D, Du N, Vogel M, Kluge S, Raff J, Hübner U, Skorupa I, Rebohle L, Schmidt H. Detecting Bacterial Cell Viability in Few µL Solutions from Impedance Measurements on Silicon-Based Biochips. Int J Mol Sci 2021; 22:ijms22073541. [PMID: 33805483 PMCID: PMC8037661 DOI: 10.3390/ijms22073541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2021] [Revised: 03/25/2021] [Accepted: 03/26/2021] [Indexed: 11/20/2022] Open
Abstract
Using two different types of impedance biochips (PS5 and BS5) with ring top electrodes, a distinct change of measured impedance has been detected after adding 1–5 µL (with dead or live Gram-positive Lysinibacillus sphaericus JG-A12 cells to 20 µL DI water inside the ring top electrode. We relate observed change of measured impedance to change of membrane potential of L. sphaericus JG-A12 cells. In contrast to impedance measurements, optical density (OD) measurements cannot be used to distinguish between dead and live cells. Dead L. sphaericus JG-A12 cells have been obtained by adding 0.02 mg/mL of the antibiotics tetracycline and 0.1 mg/mL chloramphenicol to a batch with OD0.5 and by incubation for 24 h, 30 °C, 120 rpm in the dark. For impedance measurements, we have used batches with a cell density of 25.5 × 108 cells/mL (OD8.5) and 270.0 × 108 cells/mL (OD90.0). The impedance biochip PS5 can be used to detect the more resistive and less capacitive live L. sphaericus JG-A12 cells. Also, the impedance biochip BS5 can be used to detect the less resistive and more capacitive dead L. sphaericus JG-A12 cells. An outlook on the application of the impedance biochips for high-throughput drug screening, e.g., against multi-drug-resistant Gram-positive bacteria, is given.
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Affiliation(s)
- Vinayak J. Bhat
- Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany; (V.J.B.); (D.B.); (U.H.)
| | - Sahitya V. Vegesna
- Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany; (V.J.B.); (D.B.); (U.H.)
- Correspondence: (S.V.V.); (N.D.); (H.S.)
| | - Mahdi Kiani
- Center for Microtechnologies, Chemnitz University of Technology, 09126 Chemnitz, Germany; (M.K.); (X.Z.)
| | - Xianyue Zhao
- Center for Microtechnologies, Chemnitz University of Technology, 09126 Chemnitz, Germany; (M.K.); (X.Z.)
| | - Daniel Blaschke
- Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany; (V.J.B.); (D.B.); (U.H.)
| | - Nan Du
- Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany; (V.J.B.); (D.B.); (U.H.)
- Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743 Jena, Germany
- Correspondence: (S.V.V.); (N.D.); (H.S.)
| | - Manja Vogel
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany; (M.V.); (S.K.); (J.R.); (I.S.); (L.R.)
| | - Sindy Kluge
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany; (M.V.); (S.K.); (J.R.); (I.S.); (L.R.)
| | - Johannes Raff
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany; (M.V.); (S.K.); (J.R.); (I.S.); (L.R.)
| | - Uwe Hübner
- Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany; (V.J.B.); (D.B.); (U.H.)
| | - Ilona Skorupa
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany; (M.V.); (S.K.); (J.R.); (I.S.); (L.R.)
| | - Lars Rebohle
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany; (M.V.); (S.K.); (J.R.); (I.S.); (L.R.)
| | - Heidemarie Schmidt
- Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany; (V.J.B.); (D.B.); (U.H.)
- Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743 Jena, Germany
- Correspondence: (S.V.V.); (N.D.); (H.S.)
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Liu L, Liu A, Bai S, Lv L, Jin P, Ouyang X. Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection. Sci Rep 2017; 7:13376. [PMID: 29042625 PMCID: PMC5645392 DOI: 10.1038/s41598-017-13715-3] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2017] [Accepted: 09/25/2017] [Indexed: 11/09/2022] Open
Abstract
Silicon carbide (SiC) is a wide band-gap semiconductor material with many excellent properties, showing great potential in fusion neutron detection. The radiation resistance of 4H-SiC Schottky diode detectors was studied experimentally by carefully analyzing the detectors’ properties before and after deuterium-tritium fusion neutron irradiation with the total fluence of 1.31 × 1014 n/cm2 and 7.29 × 1014 n/cm2 at room temperature. Significant degradation has been observed after neutron irradiation: reverse current increased greatly, over three to thirty fold; Schottky junction was broken down; significant lattice damage was observed at low temperature photoluminescence measurements; the peaks of alpha particle response spectra shifted to lower channels and became wider; the charge collection efficiency (CCE) decreased by about 7.0% and 22.5% at 300 V with neutron irradiation fluence of 1.31 × 1014 n/cm2 and 7.29 × 1014 n/cm2, respectively. Although the degradation exists, the SiC detectors successfully survive intense neutron radiation and show better radiation resistance than silicon detectors.
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Affiliation(s)
- Linyue Liu
- School of Nuclear Science and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China. .,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, 710024, China.
| | - Ao Liu
- Nanjing Electronic Devices Institute, Building 03, No.8 Xingwen Road, Nanjing, 210016, China
| | - Song Bai
- Nanjing Electronic Devices Institute, Building 03, No.8 Xingwen Road, Nanjing, 210016, China
| | - Ling Lv
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Peng Jin
- State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, 710024, China
| | - Xiaoping Ouyang
- School of Nuclear Science and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China. .,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, 710024, China. .,Shaanxi Engineering Research Center for Pulse-Neutron Source and its Application, Xijing University, Xi'an, 710123, China.
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