Composite CuFe1-xSnxO2/p-type silicon photodiodes

Fabrication of ZnO-SnO2 nanocomposite and its photocatalytic activity for enhanced degradation of Biebrich scarlet

The n-n-type ZnO-SnO₂ nanocomposite was fabricated using malic acid following a simple one-pot co-precipitation method. The fabricated ZnO-SnO₂ nanocomposite was employed as a photocatalyst in the degradation of Biebrich scarlet dye under UV₂₅₄ light. TEM, SAED, XRD, XPS, EDX, FTIR, and UV spectra have been recorded to characterize the synthesized ZnO-SnO₂ nanostructures. TEM studies found that the average particle size was 10-12 nm, and the SAED confirmed the polycrystalline nature of the synthesized nanocomposite. It was found that 97% of 10 mg/L Biebrich scarlet dye was degraded by 25 mg/L of photocatalyst within 40-min irradiation of UV₂₅₄ light at an optimum pH of 6. Further studies showed that the degradation followed pseudo-first-order kinetics with a rate constant of 5.48 × 10^-2 min^-1. The fabricated ZnO-SnO₂ nanocomposite was reusable up to 8 times; hence, it proved to be an efficient catalyst for the photodegradation of Biebrich scarlet dye.

Investigating the coumarin capability in chalcogenide 20TI2Se-80Pr2Se3 system based photovoltaics

Chalcogenide films containing various contents of coumarin (CO) are deposited on the p-type Si substrates. Al/coumarin doped chalcogenide films/p-Si contact exhibits a rectifying behavior. The electrical and photoresponse properties of the prepared diodes are characterized by current and capacitance measurements under various illumination intensities. The addition of coumarin to TI₂Se-Pr₂Se₃ significantly affects the characteristic parameters of diodes. Kohlrausch function is used as an appropriate way to obtain the photo charge density (ρ_ph) and the relaxation time constant from the photocurrent/capacitance transients. It is shown that coumarin doped chalcogenide films have a potential to obtain the photocarrier generation.