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Liu Z, Liu W, Zhou R, Cai S, Song Y, Yao Q, Lu X, Liu J, Liu Z, Wang Z, Zheng Y, Wang P, Liu Z, Li G, Shen D. Electron-plasmon interaction induced plasmonic-polaron band replication in epitaxial perovskite SrIrO 3 films. Sci Bull (Beijing) 2021; 66:433-440. [PMID: 36654180 DOI: 10.1016/j.scib.2020.10.003] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2020] [Revised: 09/08/2020] [Accepted: 09/21/2020] [Indexed: 01/20/2023]
Abstract
Electron-boson interaction is fundamental to a thorough understanding of various exotic properties emerging in many-body physics. In photoemission spectroscopy, photoelectron emission due to photon absorption would trigger diverse collective excitations in solids, including the emergence of phonons, magnons, electron-hole pairs, and plasmons, which naturally provides a reliable pathway to study electron-boson couplings. While fingerprints of electron-phonon/-magnon interactions in this state-of-the-art technique have been well investigated, much less is known about electron-plasmon coupling, and direct observation of the band renormalization solely due to electron-plasmon interactions is extremely challenging. Here by utilizing integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy, we discover the long sought-after pure electron-plasmon coupling-induced low-lying plasmonic-polaron replica bands in epitaxial semimetallic SrIrO3 films, in which the characteristic low carrier concentration and narrow bandwidth combine to provide a unique platform where the electron-plasmon interaction can be investigated kinematically in photoemission spectroscopy. This finding enriches the forms of electron band normalization on collective modes in solids and demonstrates that, to obtain a complete understanding of the quasiparticle dynamics in 5d electron systems, the electron-plasmon interaction should be considered on equal footing with the acknowledged electron-electron interaction and spin-orbit coupling.
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Affiliation(s)
- Zhengtai Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wanling Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Ruixiang Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Songhua Cai
- Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yekai Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Qi Yao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xiangle Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jishan Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhonghao Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen Wang
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yi Zheng
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Peng Wang
- Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhi Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Gang Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
| | - Dawei Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
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Tang F, Li H, Tian K, Ning J, Ye H, Xu S. Steady-state and time-resolved upconversion photoluminescence in Yb 3+-Er 3+ co-doped transparent ceramics of YAG. OPTICS LETTERS 2020; 45:5712-5715. [PMID: 33057272 DOI: 10.1364/ol.408308] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2020] [Accepted: 09/11/2020] [Indexed: 06/11/2023]
Abstract
Transparent ceramics (TCs) represent a new family of functional hard materials. In this Letter, steady-state and time-resolved upconversion photoluminescence in Yb3+-Er3+ co-doped TC of yttrium aluminum garnet (TC-YAG) are reported for the first time, to the best of our knowledge. Under the excitation of near-infrared 940 nm laser at room temperature, the Yb3+-Er3+ co-doped TC-YAG emits intense multi-color luminescence consisting of cyan, green, and red groups of sharp lines. More excitingly, the green group of luminescence due to the transitions from 4S3/2 to 4I15/2 states of Er3+ are the prominent components with the average lifetime of ∼0.3ms. The internal quantum efficiency of the green luminescence is estimated to be 32.8%. A unique dual-resonance energy transfer from Yb3+ to Er3+ via the excited-state vibronic transitions is proposed as the principal mechanism of the strongest green luminescence of Er3+ ions in TC-YAG.
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Wang X, Yu D, Xu S. Determination of absorption coefficients and Urbach tail depth of ZnO below the bandgap with two-photon photoluminescence. OPTICS EXPRESS 2020; 28:13817-13825. [PMID: 32403848 DOI: 10.1364/oe.391534] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Accepted: 04/15/2020] [Indexed: 06/11/2023]
Abstract
In this article, we demonstrate a novel approach to determine the absorption coefficient of ZnO below the bandgap via measuring the self-absorption (SA) effect on the two-photon luminescence (TPL) spectrum of the ZnO bulk crystal rod at cryogenic temperature. Under a geometric configuration of side-excitation and front-detection, the intensities of several major spectral components of TPL spectra of ZnO can be decisively tuned by precisely varying the transmitting distance of luminescence signal, so that the absorption coefficients at different wavelengths can be determined on the basis of Beer-Lambert law. Furthermore, the peak position of donor bound exciton luminescence exhibits a unique redshift tendency with increasing the transmitting distance. Starting from the product of Lorentzian lineshape function and exponential absorption edge of Urbach tail, an analytical formula is derived to quantitatively interpret the experimental redshift characteristic with the transmitting distance. The energy depth of Urbach tail of the studied ZnO crystal is deduced to be ∼13.3 meV. In principle, this new approach can be used to determine absorption coefficient of any luminescent solids as long as the SA effect happens.
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Li H, Tang J, Lin F, Wang D, Fang D, Fang X, Liu W, Chen R, Wei Z. Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment. NANOSCALE RESEARCH LETTERS 2019; 14:312. [PMID: 31512039 PMCID: PMC6738368 DOI: 10.1186/s11671-019-3145-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/28/2019] [Accepted: 08/30/2019] [Indexed: 06/10/2023]
Abstract
ZnO nanowires play a very important role in optoelectronic devices due to the wide bandgap and high exciton binding energy. However, for one-dimensional nanowire, due to the large surface to volume ratio, surface traps and surface adsorbed species acts as an alternate pathway for the de-excitation of carriers. Ar plasma treatment is a useful method to enhance the optical property of ZnO nanowires. It is necessary to study the optical properties of ZnO nanowires treated by plasma with different energies. Here, we used laser spectroscopy to investigate the plasma treatments with various energies on ZnO nanowires. Significantly improved emission has been observed for low and moderate Ar plasma treatments, which can be ascribed to the surface cleaning effects and increased neutral donor-bound excitons. It is worth mentioning that about 60-folds enhancements of the emission at room temperature can be achieved under 200 W Ar plasma treatment. When the plasma energy exceeds the threshold, high-ion beam energy will cause irreparable damage to the ZnO nanowires. Thanks to the enhanced optical performance, random lasing is observed under optical pumping at room temperature. And the stability has been improved dramatically. By using this simple method, the optical property and stability of ZnO nanowires can be effectively enhanced. These results will play an important role in the development of low dimensional ZnO-based optoelectronic devices.
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Affiliation(s)
- Haolin Li
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, People's Republic of China
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, People's Republic of China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, People's Republic of China
| | - Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, People's Republic of China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, People's Republic of China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, People's Republic of China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, People's Republic of China
| | - Weizhen Liu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun, 130024, People's Republic of China
| | - Rui Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, People's Republic of China.
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, People's Republic of China.
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Wang X, Ye H, Su Z, Yu D, Xu S. Observation of two-times self-focusing of femtosecond laser beam in ZnO crystal by two-photon luminescence. Sci Bull (Beijing) 2018; 63:1392-1396. [PMID: 36658978 DOI: 10.1016/j.scib.2018.10.004] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2018] [Revised: 09/02/2018] [Accepted: 10/08/2018] [Indexed: 01/21/2023]
Abstract
By "seeing" the green two-photon luminescence, two separate focusing points are observed on the propagation axis of a converging femtosecond laser beam in a ZnO single crystal rod. It is found that the self-focusing effect makes a significant contribution to the formation of the first focusing point, while the second focusing point is caused by self-refocusing. The position of the first focusing point is in good agreement with the value predicted by a model developed by Chin and his co-workers. These experimental findings could be the unprecedented evidence for the self-focusing and refocusing effect of the femtosecond laser filament propagation in nonlinear media.
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Affiliation(s)
- Xiaorui Wang
- Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China; Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Honggang Ye
- Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China; Department of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhicheng Su
- Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China
| | - Dapeng Yu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Shijie Xu
- Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China.
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