Interface control for pure ultraviolet electroluminescence from nano-ZnO-based heterojunction devices

Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction

Interface engineering in the fabrication of low-dimensional optoelectronic devices has been highlighted in recent decades to enhance device characteristics such as reducing leakage current, optimizing charge transport, and modulating the energy-band structure. In this paper, we report a dielectric interface approach to realize one-dimensional (1D) wire near-infrared light-emitting devices with high brightness and enhanced emission efficiency. The light-emitting diode is composed of a zinc oxide microwire covered by a silver nanolayer (Ag@ZnO MW), magnesium oxide (MgO) buffer layer, and p-type gallium arsenide (GaAs) substrate. In the device structure, the insertion of a MgO dielectric layer in the n-ZnO MW/p-GaAs heterojunction can be used to modulate the device features, such as changing the charge transport properties, reducing the leakage current and engineering the band alignment. Furthermore, the cladding of the Ag nanolayer on the ZnO MW can optimize the junction interface quality, thus reducing the turn-on voltage and increasing the current injection and electroluminescence (EL) efficiency. The combination of MgO buffer layer and Ag nanolayer cladding can be utilized to achieve modulating the carrier recombination path, interfacial engineering of heterojunction with optimized band alignment and electronic structure in these carefully designed emission devices. Besides, the enhanced near-infrared EL and improved physical contact were also obtained. The study of current transport modulation and energy-band engineering proposes an original and efficient route for improving the device performances of 1D wire-type heterojunction light sources.

Electrically driven whispering-gallery-mode microlasers in an n-MgO@ZnO:Ga microwire/p-GaN heterojunction

In emerging miniaturized applications, semiconductor micro/nanostructures laser devices have drawn great public attentions of late years. The device performances of micro/nanostructured microlasers are highly restricted to the different reflective conditions at various side surfaces of microresonators and junction interface quality. In this study, an electrically driven whispering-gallery-mode (WGM) microlaser composed of a Ga-doped ZnO microwire covered by a MgO layer (MgO@ZnO:Ga MW) and a p-type GaN substrate is illustrated experimentally. Incorporating a MgO layer on the side surfaces of ZnO:Ga MWs can be used to reduce light leakage along the sharp edges and the ZnO:Ga/GaN interface. This buffer layer incorporation also enables engineering the energy band alignment of n-ZnO:Ga/p-GaN heterojunction and manipulating the current transport properties. The as-constructed n-MgO@ZnO:Ga MW/p-GaN heterojunction device can emit at an ultraviolet wavelength of 375.5 nm and a linewidth of about 25.5 nm, achieving the excitonic-related recombination in the ZnO:Ga MW. The broadband spectrum collapsed into a series of sharp peaks upon continuous-wave (CW) operation of electrical pumping, especially for operating current above 15.2 mA. The dominant emission line was centered at 378.5 nm, and the line width narrowed to approximately 0.95 nm. These sharp peaks emerged from the spontaneous emission spectrum and had an average spacing of approximately 5.5 nm, following the WGM cavity modes. The results highlight the significance of interfacial engineering for optimizing the performance of low-dimensional heterostructured devices and shed light on developing future miniaturized microlasers.

Plasmon-enabled spectrally narrow ultraviolet luminescence device using Pt nanoparticles covered one microwire-based heterojunction

Owing to great luminescent monochromaticity, high stability, and independent of automatic color filter, low dimensional ultraviolet light-emitting diodes (LEDs) via the hyperpure narrow band have attracted considerable interest for fabricating miniatured display equipments, solid state lighting sources, and other ultraviolet photoelectrical devices. In this study, a near-ultraviolet LED composed of one Ga-doped ZnO microwire (ZnO:Ga MW) and p-GaN layer was fabricated. The diode can exhibit bright electroluminescence (EL) peaking at 400.0 nm, with a line width of approximately 35 nm. Interestingly, by introducing platinum nanoparticles (PtNPs), we achieved an ultraviolet plasmonic response; an improved EL, including significantly enhanced light output; an observed blueshift of main EL peaks of 377.0 nm; and a reduction of line width narrowing to 10 nm. Working as a powerful scalpel, the decoration of PtNPs can be employed to tailor the spectral line profiles of the ultraviolet EL performances. Also, a rational physical model was built up, which could help us study the carrier transportation, recombination of electrons and holes, and dynamic procedure of luminescence. This method offers a simple and feasible way, without complicated fabricating technology such as an added insulating layer or core shell structure, to realize hyperpure ultraviolet LED. Therefore, the proposed engineering of energy band alignment by introducing PtNPs can be employed to build up high performance, high spectral purity luminescent devices in the short wavelengths.

Hybrid quadrupole plasmon induced spectrally pure ultraviolet emission from a single AgNPs@ZnO:Ga microwire based heterojunction diode

Ultraviolet light-emitting materials and devices with high-efficiency are required for many applications. One promising way to enhance the ultraviolet luminescence efficiency is by incorporating plasmonic nanostructures. However, a large energy mismatch between the plasmons and the light emitters greatly limits the direct realization of light enhancement. In this work, a single Ga-doped ZnO microwire prepared with large-sized Ag nanoparticle (the diameter d ∼ 200 nm) deposition (AgNPs@ZnO:Ga MW) was utilized to construct a high-performance heterojunction diode, with p-GaN serving as the hole injection layer. In addition to enhanced optical output, the emission spectra also revealed that typical near-band-edge (NBE) emission with higher wavelength stability centered around 378.0 nm was achieved, accompanied by narrowing of the spectral linewidth to around 10 nm. Thus, the interfacial and p-GaN emissions were successfully suppressed. The spectral profile of the emission spectra of the heterojunction diodes precisely matched the photoluminescence spectrum of the single ZnO:Ga MW, which indicates that the single ZnO:Ga MW can act as the active region for the radiative recombination of electrons and holes in the diode operation. In the emission mechanism, hybrid quadrupole plasmons induce the generation of hot electrons, which are then injected into the conduction band of the neighboring ZnO:Ga and are responsible for the NBE-type emission of the single MW based heterojunction diode. This novel emission enhancement and modulation principle can aid in the design and development of new types of luminescent materials and devices with high-efficiency, spectral stability and spectral purity.

Enhanced ultraviolet electroluminescence from ZnO nanoparticles via decoration of partially oxidized Al layer

We construct the ZnO-based superluminescent light-emitting diodes (SLEDs) by spin-coating ZnO nano-particles onto p-GaN/sapphire substrate. By inserting another thin Al layer to form an n-ZnO/Al/n-ZnO/p-GaN sandwich structured SLD, the intensities of the photoluminescence and electroluminescence were greatly enhanced, which can be attributed to the surface plasmon resonance of this Al layer. The tendency of the intensities of the entire electroluminescence spectra shows a super-linearly behavior with increasing the forward bias. Besides, the spectral bandwidth is narrowed down enormously owing to the achievement of the SLD. Furthermore, the interfacial emissions between ZnO/GaN are effectively suppressed by partially oxidizing the Al layer.

Tailoring the electroluminescence of a single microwire based heterojunction diode using Ag nanowires deposition

A single Ga-doped ZnO microwire covered by Ag nanowires (AgNWs@ZnO:Ga MW) was utilized to construct a promising ultraviolet light source, with p-GaN serving as a hole injection layer.

Surface/Interface Engineering for Constructing Advanced Nanostructured Light-Emitting Diodes with Improved Performance: A Brief Review

With the rise of nanoscience and nanotechnologies, especially the continuous deepening of research on low-dimensional materials and structures, various kinds of light-emitting devices based on nanometer-structured materials are gradually becoming the natural candidates for the next generation of advanced optoelectronic devices with improved performance through engineering their interface/surface properties. As dimensions of light-emitting devices are scaled down to the nanoscale, the plentitude of their surface/interface properties is one of the key factors for their dominating device performance. In this paper, firstly, the generation, classification, and influence of surface/interface states on nanometer optical devices will be given theoretically. Secondly, the relationship between the surface/interface properties and light-emitting diode device performance will be investigated, and the related physical mechanisms will be revealed by introducing classic examples. Especially, how to improve the performance of light-emitting diodes by using factors such as the surface/interface purification, quantum dots (QDs)-emitting layer, surface ligands, optimization of device architecture, and so on will be summarized. Finally, we explore the main influencing actors of research breakthroughs related to the surface/interface properties on the current and future applications for nanostructured light-emitting devices.

Crystal-Orientation-Related Dynamic Tuning of the Lasing Spectra of CdS Nanobelts by Piezoelectric Polarization

Realizing dynamic wavelength tunability could bring about tremendous impacts in laser technology, pressure nanosensing, and lab-on-a-chip devices. Here, we demonstrate an original strategy to operate the lasing mode shift through reversible length changes of a CdS nanobelt, which is determined by the direction of piezoelectric polarization. The relationships between the direction of applied strain, the lasing mode shift, and the tunable effective refractive index are elaborated in detail. The correlation between the piezoelectric polarization-induced lasing mode red shift and the blue shift in the wavelength of the lasing mode output caused by the Poisson effect is discussed in depth, as well. Our study comprehensively considers the influence of both the cavity size variations and refractive index changes on the control of the lasing mode and provides a deeper understanding of the strain-induced lasing mode shift.

Piezoluminescent devices by designing array structures

Mechanoluminescence has attracted increasing attentions because it can convert the kinetic energy during human daily motions into light to be used in sensors and displays. However, its practical applications are still hindered by the weak brightness and limited color while under large forces. Herein, we developed novel piezoluminescent devices (PLDs) which could effectively emit visible light under low pressing forces through the stress-concentration and enhancing deformation on the basis of carefully-designed array structures. The emitting colors were also tunable by using bilayer luminescent film under different pressures. This work not only provides a new strategy to effectively harvest mechanical energy into light, but also presents a scalable, low-cost and color-tunable PLD which shows great potentials in various applications such as luminescent floors, shoes and stress-activated displays.

Three-Dimensional Core-Shell Nanorod Arrays for Efficient Visible-Light Photocatalytic H2 Production

Constructing heterostructured nanomaterials with integrating different functional materials into well-oriented nanoarchitectures is an efficacious tactic to obtain high-performance photocatalysts. In this paper, we fabricated three-dimensional ZnO-WS₂@CdS core-shell nanorod arrays as visible-light-driven photocatalysts for efficient photocatalytic H₂ production. This unique core-shell heterostructure extends visible-light absorption and provides more active sites. More importantly, the ZnO-WS₂@CdS nanorod arrays build a beneficial energy level configuration and spatial structure to accelerate the generation, separation, and transfer of the photogenerated electron-hole. On the basis of the synergistic effects, the photocatalytic H₂ rate of optimized ZnO-WS₂@CdS nanorod arrays achieves 15.12 mmol h^-1 g^-1 in visible light irradiation, which is 39, 9, and 8 times higher than pure CdS, ZnO-CdS, and CdS-WS₂ photocatalysts. The apparent quantum yield is up to 14.92% at 420 nm. Moreover, the core-shell heterostructure photocatalyst can recycle and maintain stability.