Epitaxially grown monolayer VSe2: an air-stable magnetic two-dimensional material with low work function at edges

Atomically Sharp 1D Interfaces in 2D Lateral Heterostructures of VSe2─NbSe2 Monolayers

van der Waals heterostructures have emerged as an ideal platform for creating engineered artificial electronic states. While vertical heterostructures have been extensively studied, realizing high-quality lateral heterostructures with atomically sharp interfaces remains a major experimental challenge. Here, we advance a one-pot two-step molecular beam lateral epitaxy approach and successfully synthesize atomically well-defined 1T-VSe2─1H-NbSe2 lateral heterostructures. We demonstrate the formation of defect-free lateral heterostructures and characterize their electronic structure by using scanning tunneling microscopy and spectroscopy together with density functional theory calculations. We find additional electronic states at the 1D interface as well as signatures of Kondo resonances in a side-coupled geometry. Our experiments explored the full potential of lateral heterostructures for realizing exotic electronic states in low-dimensional systems for further studies of artificial designer quantum materials.

Evolution of the Fermi Surface of 1T-VSe2 across a Structural Phase Transition

Periodic lattice distortion, known as the charge density wave, is generally attributed to electron-phonon coupling. This correlation is expected to induce a pseudogap at the Fermi level in order to gain the required energy for stable lattice distortion. The transition metal dichalcogenide 1T-VSe2 also undergoes such a transition at 110 K. Here, we present detailed angle-resolved photoemission spectroscopy experiments to investigate the electronic structure in 1T-VSe2 across the structural transition. Previously reported warping of the electronic structure and the energy shift of a secondary peak near the Fermi level as the origin of the charge density wave phase are shown to be temperature independent and hence cannot be attributed to the structural transition. Our work reveals new states that were not resolved in previous studies. Earlier results can be explained by the different dispersion natures of these states and temperature-induced broadening. Only the overall size of the Fermi surface is found to change across the structural transition. These observations, quite different from the charge density wave scenario commonly considered for 1T-VSe2 and other transition metal dichalcogenides, bring fresh perspectives toward correctly describing structural transitions. Therefore, these new results can be applied to material families in which the origin of the structural transition has not been resolved.

Quantum States Induced by Strong Interface Coupling in a 2D VSe2/Bi2Se3 Heterostructure

We have successfully fabricated single-layer (SL) 1T-VSe2/Bi2Se3 heterostructures using molecular beam epitaxy (MBE), which exhibits uniform moiré patterns on the heterostructure surface. Scanning tunneling microscopy/spectroscopy (STM/STS) reveals a notable quantum state near the Fermi energy, robust across the entire moiré lattice. This quantum state peak shifts slightly across different domain ranges, suggesting an elastic strain dependence in SL VSe2, confirmed by geometric phase analysis (GPA) simulations. Density functional theory (DFT) calculations indicate that the enhanced quantum state results from charge redistribution between the substrate and the epifilm with the orbitals of Se atoms in the deformed VSe2 playing a dominant role.

Work Function-Guided Electrocatalyst Design

The development of high-performance electrocatalysts for energy conversion reactions is crucial for advancing global energy sustainability. The design of catalysts based on their electronic properties (e.g., work function) has gained significant attention recently. Although numerous reviews on electrocatalysis have been provided, no such reports on work function-guided electrocatalyst design are available. Herein, a comprehensive summary of the latest advancements in work function-guided electrocatalyst design for diverse electrochemical energy applications is provided. This includes the development of work function-based catalytic activity descriptors, and the design of both monolithic and heterostructural catalysts. The measurement of work function is first discussed and the applications of work function-based catalytic activity descriptors for various reactions are fully analyzed. Subsequently, the work function-regulated material-electrolyte interfacial electron transfer (IET) is employed for monolithic catalyst design, and methods for regulating the work function and optimizing the catalytic performance of catalysts are discussed. In addition, key strategies for tuning the work function-governed material-material IET in heterostructural catalyst design are examined. Finally, perspectives on work function determination, work function-based activity descriptors, and catalyst design are put forward to guide future research. This work paves the way to the work function-guided rational design of efficient electrocatalysts for sustainable energy applications.

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Currently, as shown by large-scale research on two-dimensional materials in the field of nanoelectronics and catalysis, the construction of large-area two-dimensional materials is crucial for the development of devices and their application in photovoltaics, sensing, optoelectronics, and energy generation/storage. Here, using atmospheric-pressure chemical vapor deposition, we developed a method to regulate growth conditions according to the growth mechanism for WSe₂ and MoSe₂ materials. By accurately controlling the hydrogen flux within the range of 1 sccm and the distance between the precursor and the substrate, we obtained large-size films of single atomic layers with thicknesses of only about 1 nm. When growing the samples, we could not only obtain a 100 percent proportion of samples with the same shape, but the samples could also be glued into pieces of 700 μm and above in size, changing the shape and making it possible to reach the millimeter/submillimeter level visible to the naked eye. Our method is an effective method for the growth of large-area films with universal applicability.

Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides (2D TMDs) present promising applications in various fields such as electronics, optoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions due to their regulable energy band structures and unique properties. For emerging spintronics applications, materials with excellent room-temperature ferromagnetism are required. Although most transition metal compounds do not possess room-temperature ferromagnetism on their own, they are widely modified by researchers using the emerging strategies to engineer or modulate their intrinsic properties. This paper reviews recent enhancement approaches to induce magnetism in 2D TMDs, mainly using doping, vacancy defects, composite of heterostructures, phase modulation, and adsorption, and also by electron irradiation induction, O plasma treatment, etc. On this basis, the produced effects of these methods for the introduction of magnetism into 2D TMDs are compressively summarized and constructively discussed. For perspective, research on magnetic doping techniques for 2D TMDs materials should be directed toward more reliable and efficient directions, such as exploring advanced design strategies to combine dilute magnetic semiconductors, antiferromagnetic semiconductors, and superconductors to develop new types of heterojunctions; and advancing experimentation strategies to fabricate the designed materials and enable their functionalities with simultaneously pursuing the upscalable growth methods for high-quality monolayers to multilayers.

A Quantum Monte Carlo Study of the Structural, Energetic, and Magnetic Properties of Two-Dimensional H and T Phase VSe2

Previous works have controversially claimed near-room-temperature ferromagnetism in two-dimensional (2D) VSe₂, with conflicting results throughout the literature. These discrepancies in magnetic properties between both phases (T and H) of 2D VSe₂ are most likely due to the structural parameters being coupled to the magnetic properties. Specifically, both phases have a close lattice match and similar total energies, which makes it difficult to determine which phase is being observed experimentally. In this study, we used a combination of density functional theory, highly accurate diffusion Monte Carlo (DMC), and a surrogate Hessian line-search optimization technique to resolve the previously reported discrepancy in structural parameters and relative phase stability. With DMC accuracy, we determined the free-standing geometry of both phases and constructed a phase diagram. Our findings demonstrate the successes of the DMC method coupled with the surrogate Hessian structural optimization technique when applied to a 2D magnetic system.

Hybrid Nano Flake-like Vanadium Diselenide Combined on Multi-Walled Carbon Nanotube as a Binder-Free Electrode for Sodium-Ion Batteries

As the market for electric vehicles and portable electronic devices continues to grow rapidly, sodium-ion batteries (SIBs) have emerged as energy storage systems to replace lithium-ion batteries (LIBs). However, sodium-ion is heavier and larger than lithium-ion, resulting in volume expansion and slower ion transfer. It is necessary to find suitable anode materials with high capacity and stability. In addition, wearable electronics are starting to be commercialized, requiring a binder-free electrode used in flexible batteries. In this work, we synthesized nano flake-like VSe2 using organic precursor and combined it with MWCNT as carbonaceous material. VSe2@MWCNT was mixed homogenously using sonication and fabricated film electrodes without a binder and substrate via vacuum filter. The hybrid electrode exhibited high-rate capability and stable cycling performance with a discharge capacity of 469.1 mAhg-1 after 200 cycles. Furthermore, VSe2@MWCNT exhibited coulombic efficiency of ~99.7%, indicating good cycle stability. Additionally, VSe2@MWCNT showed a predominant 85.5% of capacitive contribution at a scan rate of 1 mVs-1 in sodiation/desodiation process. These results showed that VSe2@MWCNT is a suitable anode material for flexible SIBs.

Solvent-Induced Degradation of Electrochemically Exfoliated Vanadium Selenide Visualized by Electron Microscopy

Recently discovered two-dimensional ferromagnetic materials (2DFMs) have rapidly gained much interest in the fields of spintronics and computing, where they may prove powerful tools for miniaturizing devices such as magnetic tunnel junctions and spin-transfer torque memory bits. In addition, heterojunctions and twisted bilayer stacks of such materials may yield exotic spin textures. However, preparation of such devices is complicated by the air sensitivity of many 2DFMs. Here, we report details on the preparation of few-to-monolayer flakes of vanadium selenide (VSe2) using electrochemical exfoliation in propylene carbonate. We also present a detailed study of the effects of air on the structure and magnetic properties of bare and passivated VSe2 after different concentrations of surface passivation treatment. We characterized the microstructure of holes in the VSe2 flakes and the formation of new compounds arising from air exposure, solvent exposure during the exfoliating process, and deliberate electron beam irradiation (sculpting). We sculpt VSe2 flakes while retaining the 1T-VSe2 lattice structure, opening the door for top-down patterned high-resolution 2DFM nanostructures. Additionally, investigation of the magnetic response of nanosheets using magnetic force microscopy (MFM) showed that the oxidation-induced damage only affects the surface fields locally and does not quench large-scale magnetic signal. The findings of this study pave the way toward practical incorporation of 2D ferromagnetic materials in nanoelectronics.

Feasible Structure Manipulation of Vanadium Selenide into VSe2 on Au(111)

Vanadium diselenide (VSe2), a member of the transition metal dichalcogenides (TMDs), is proposed with intriguing properties. However, a comprehensive investigation of VSe2 (especially regarding on the growth mechanism) is still lacking. Herein, with the molecular beam epitaxy (MBE) measures frequently utilized in surface science, we have successfully synthesized the single-layer VSe2 on Au(111) and revealed its structural transformation using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT). Initially, formation of the honeycomb structure is observed with the moiré periodicity, which is assigned to VSe2. Followed by stepwise annealing, defective structures with streaked patterns start to emerge due to the depletion of Se, which can be reversed to the pristine VSe2 by resupplying Se. With more V than Se deposited, a new compound that has no bulk analogue is discovered on Au(111), which could be transformed back to VSe2 after providing excessive Se. As the realization of manipulating V selenide phases is subtly determined by the relative ratio of V to Se and post-annealing treatments, this report provides useful insights toward fundamental understanding of the growth mechanism of TMDs and might promote the wide application of VSe2 in related fields such as catalysis and nanoelectronics.

Boosting Energy Efficiency and Stability of Li-CO2 Batteries via Synergy between Ru Atom Clusters and Single-Atom Ru-N4 sites in the Electrocatalyst Cathode

The Li-CO₂ battery is a novel strategy for CO₂ capture and energy-storage applications. However, the sluggish CO₂ reduction and evolution reactions cause large overpotential and poor cycling performance. Herein, a new catalyst containing well-defined ruthenium (Ru) atomic clusters (Ru_AC ) and single-atom Ru-N₄ (Ru_SA ) composite sites on carbon nanobox substrate (Ru_AC+SA @NCB) (NCB = nitrogen-doped carbon nanobox) is fabricated by utilizing the different complexation effects between the Ru cation and the amine group (NH₂ ) on carbon quantum dots or nitrogen moieties on NCB. Systematic experimental and theoretical investigations demonstrate the vital role of electronic synergy between Ru_AC and Ru-N₄ in improving the electrocatalytic activity toward the CO₂ evolution reaction (CO₂ ER) and CO₂ reduction reaction (CO₂ RR). The electronic properties of the Ru-N₄ sites are essentially modulated by the adjacent Ru_AC species, which optimizes the interactions with key reaction intermediates thereby reducing the energy barriers in the rate-determining steps of the CO₂ RR and CO₂ ER. Remarkably, the Ru_AC+SA @NCB-based cell displays unprecedented overpotentials as low as 1.65 and 1.86 V at ultrahigh rates of 1 and 2 A g^-1 , and twofold cycling lifespan than the baselines. The findings provide a novel strategy to construct catalysts with composite active sites comprising multiple atom assemblies for high-performance metal-CO₂ batteries.

Topochemical Transformation of Two-Dimensional VSe2 into Metallic Nonlayered VO2 for Water Splitting Reactions in Acidic and Alkaline Media

The engineering of the structural and morphological properties of nanomaterials is a fundamental aspect to attain desired performance in energy storage/conversion systems and multifunctional composites. We report the synthesis of room temperature-stable metallic rutile VO₂ (VO₂ (R)) nanosheets by topochemically transforming liquid-phase exfoliated VSe₂ in a reductive Ar-H₂ atmosphere. The as-produced VO₂ (R) represents an example of two-dimensional (2D) nonlayered materials, whose bulk counterparts do not have a layered structure composed by layers held together by van der Waals force or electrostatic forces between charged layers and counterbalancing ions amid them. By pretreating the VSe₂ nanosheets by O₂ plasma, the resulting 2D VO₂ (R) nanosheets exhibit a porous morphology that increases the material specific surface area while introducing defective sites. The as-synthesized porous (holey)-VO₂ (R) nanosheets are investigated as metallic catalysts for the water splitting reactions in both acidic and alkaline media, reaching a maximum mass activity of 972.3 A g^-1 at -0.300 V vs RHE for the hydrogen evolution reaction (HER) in 0.5 M H₂SO₄ (faradaic efficiency = 100%, overpotential for the HER at 10 mA cm^-2 = 0.184 V) and a mass activity (calculated for a non 100% faradaic efficiency) of 745.9 A g^-1 at +1.580 V vs RHE for the oxygen evolution reaction (OER) in 1 M KOH (overpotential for the OER at 10 mA cm^-2 = 0.209 V). By demonstrating proof-of-concept electrolyzers, our results show the possibility to synthesize special material phases through topochemical conversion of 2D materials for advanced energy-related applications.

Topical review: recent progress of charge density waves in 2D transition metal dichalcogenide-based heterojunctions and their applications

Charge density wave (CDW) is an intriguing physical phenomenon especially found in two-dimensional (2D) layered systems such as transition-metal dichalcogenides (TMDs). The study of CDW is vital for understanding lattice modification, strongly correlated electronic behaviors, and other related physical properties. This paper gives a review of the recent studies on CDW emerging in 2D TMDs. First, a brief introduction and the main mechanisms of CDW are given. Second, the interplay between CDW patterns and the related unique electronic phenomena (superconductivity, spin, and Mottness) is elucidated. Then various manipulation methods such as doping, applying strain, local voltage pulse to induce the CDW change are discussed. Finally, examples of the potential application of devices based on CDW materials are given. We also discuss the current challenge and opportunities at the frontier in this research field.

Molecular Beam Epitaxy of Two-Dimensional Vanadium-Molybdenum Diselenide Alloys

Two-dimensional (2D) alloys represent a versatile platform that extends the properties of atomically thin transition-metal dichalcogenides. Here, using molecular beam epitaxy, we investigate the growth of 2D vanadium-molybdenum diselenide alloys, V_xMo_1-xSe₂, on highly oriented pyrolytic graphite and unveil their structural, chemical, and electronic integrities via measurements by scanning tunneling microscopy/spectroscopy, synchrotron X-ray photoemission, and X-ray absorption spectroscopy (XAS). Essentially, we found a critical value of x = ∼0.44, below which phase separation occurs and above which a homogeneous metallic phase is favored. Another observation is an effective increase in the density of mirror twin boundaries of constituting MoSe₂ in the low V concentration regime (x ≤ 0.05). Density functional theory calculations support our experimental results on the thermal stability of 2D V_xMo_1-xSe₂ alloys and suggest an H phase of the homogeneous alloys with alternating parallel V and Mo strips randomly in-plane stacked. Element-specific XAS of the 2D alloys, which clearly indicates quenched atomic multiplets similar to the case of 2H-VSe₂, provides strong evidence for the H phase of the 2D alloys. This work provides a comprehensive understanding of the thermal stability, chemical state, and electronic structure of 2D V_xMo_1-xSe₂ alloys, useful for the future design of 2D electronic devices.

Single-layer CrI3 grown by molecular beam epitaxy

Single- and few-layer chromium triiodide (CrI₃), which has been intensively investigated as a promising platform for two-dimensional magnetism, is usually prepared by the mechanical exfoliation. Here, we report direct growth of single-layer CrI₃ using molecular beam epitaxy in ultrahigh vacuum. Scanning tunneling microscopy (STM), together with density functional theory (DFT) calculation, revealed that the iodine trimers, each of which consists of three I atoms surrounding a three-fold Cr honeycomb center, are the basic units of the topmost I layer. Different superstructures of single-layer CrI₃ with periodicity around 2-4 nm were obtained on Au(1 1 1), while only the 1 × 1 structure was observed on the graphite substrate. At an elevated temperature of 423 K, single-layer CrI₃ began to decompose and transformed into single-layer chromium diiodide. Our bias-dependent STM images suggest that the unoccupied and occupied states are spatial-separately distributed, consistent with the results of our DFT calculation. We also discussed the role of charge distribution in the super-exchange interactions among Cr atoms in single-layer CrI₃.

Two-dimensional hexagonal chromium chalco-halides with large vertical piezoelectricity, high-temperature ferromagnetism, and high magnetic anisotropy

On the basis of density functional theory, we predicted that Janus CrTeI and CrSeBr monolayers possess highly energetic, dynamical, and mechanical stability. Due to noncentral symmetry, the two monolayers exhibit vertical piezoelectricity with large piezoelectric coefficients d31 (1.745 and 1.716 pm V-1 for CrBSe and CrTeI, respectively), which are larger than those of most materials in existence. Both systems are also ferromagnetic (FM) semiconductors, with Curie temperature (TC) higher than 550 K and large in-plane magnetic anisotropy energy. Superexchange interactions are responsible for high-temperature FM order. A semiconductor to half metal transition can be regulated by carrier doping, which can be carried out by gate voltages. Doped systems still retain the same FM order as pristine ones; in particular, hole doping enhances exchange coupling, thereby increasing TC. The combination of piezoelectricity, high TC, and controllable electronic structures and magnetic properties makes magnetic 2D Janus CrSeBr and CrTeI attractive materials for potential applications in nanoelectronics, electromechanics, and spintronics.

Structural Phase Transition of Multilayer VSe2

Vanadium diselenide (VSe₂), a member of the transition metal dichalcogenides (TMDs) family, is emerging as a promising two-dimensional (2D) candidate for the electronic and spintronic device with exotic properties including charge/spin density wave and ferromagnetism. The bulk crystal VSe₂ exists in a crystallographic form of 1T-phase with metallic behavior. In this paper, we report a structural phase transition of multilayer VSe₂ from 1T to 2H through annealing at 650 K, accompanying a metal-insulator transition. We observe that the 2H-phase is more thermodynamically favorable than the 1T-phase at 2D.

Solution-synthesis of Sb2Se3 nanorods using KSeCN as a molecular selenium source

Potassium selenocyanate (KSeCN) is used as a molecular selenium source to prepare Sb₂Se₃ nanorods, in which selenocyanate (SeCN⁻) anions are thermally decomposed to elemental Se(0) and then reduced to Se²⁻ anions in the organic amine medium.

Is Charge-Transfer Doping Possible at the Interfaces of Monolayer VSe2 with MoO3 and K?

Being a metallic transition-metal dichalcogenide, monolayer vanadium diselenide (VSe₂) exhibits many novel properties, such as charge density waves and magnetism. Its interfaces with other materials can potentially be used in device applications as well as for manipulating its intrinsic properties. Here, we present a scanning tunneling microscopy and synchrotron-based X-ray photoemission spectroscopy study of the surface charge-transfer doping using efficient electron-withdrawing and electron-donating materials, that is, molybdenum trioxide (MoO₃) and potassium (K), on the molecular beam epitaxy-grown monolayer VSe₂ on highly oriented pyrolytic graphite (HOPG). We demonstrate that monolayer VSe₂ is immune to MoO₃- and K-doping effects. However, at the monolayer edges where the local chemical reactivity is higher because of Se deficiency, MoO₃ is seen to react with VSe₂ to form molybdenum dioxide (MoO₂) and vanadium dioxide (VO₂). Compared to the obvious charge-transfer doping effects of MoO₃ and K on HOPG, the electronic structure of monolayer VSe₂ is barely perturbed. This is attributed to the large density of states at the Fermi level of monolayer VSe₂ carrying the metallic character. This work provides new insights into the chemical and electronic properties of monolayer VSe₂, important for future VSe₂-based electronic device design.

Novel polymorphic phase of two-dimensional VSe2: the 1T' structure and its lattice dynamics

Polymorphisms allowing multiple structural phases are among the most fascinating properties of transition metal dichalcogenides (TMDs). Herein, the polymorphic 1T' phase and its lattice dynamics for bilayer VSe₂ grown on epitaxial bilayer graphene are investigated via low temperature scanning tunneling microscopy (STM). The 1T' structure, mostly observed in group-6 TMDs, is unexpected in VSe₂, which is a group-5 TMD. Emergence of the 1T' structure in bilayer VSe₂ suggests the important roles of interface and layer configurations, providing new possibilities regarding the polymorphism of TMDs. Detailed topographical analysis elucidates the microscopic nature of the 1T' structure, confirming that Se-like and V-like surfaces can be resolved depending on the polarity of the sample bias. In addition, bilayer VSe₂ can transit from a static state of the 1T' phase to a dynamic state consisting of lattice vibrations, triggered by tunneling current from the STM tip. Topography also shows hysteretic behavior during the static-dynamic transition, which is attributed to latent energy existing between the two states. The observed lattice dynamics involve vibrational motion of the Se atoms and the middle V atoms. Our observations will provide important information to establish in-depth understanding of the microscopic nature of 1T' structures and the polymorphism of two-dimensional TMDs.

Two-Dimensional Ferroics and Multiferroics: Platforms for New Physics and Applications

Two-dimensional (2D) ferroics, including ferromagnets, ferroelectrics, ferroelastics, and multiferroics, recently have been theoretically proposed or experimentally revealed. The research has attracted tremendous attention because of the novel physics and promising applications for nanoelectronics, revealing ferroics in the 2D limit. In the present Perspective, we comprehensively review the recent research progress and also the proposed applications of 2D ferromagnetic, ferroelectric, and ferroelastic materials from theoretical and experimental viewpoints. We then introduce the coupling between ferroic orders and highlight the latest research on 2D multiferroic materials. The promising research directions and outlooks are discussed at the end of the Perspective. It is expected that the comprehensive overview of 2D ferroic materials can provide guidelines for researchers in the area and inspire further explorations of new physics and ferroic devices.

Spontaneous Formation of 1D Pattern in Monolayer VSe2 with Dispersive Adsorption of Pt Atoms for HER Catalysis

Creation of functional patterns in two-dimensional (2D) materials provides opportunities to extend their potential for applications. Transition-metal dichalcogenides (TMDCs) are suitable 2D materials for pattern generation because of properties including alterable polymorphic phases, easy chalcogen-vacancy formation, metal-atom insertion, and alloying. Such patterning can be used for selective functionalization. Here we report the spontaneous formation of long-range, well-ordered 1D patterns in monolayer vanadium diselenide (VSe₂) by a single annealing stage during growth. Atomic-resolution images in real space combined with density-functional-theory (DFT) calculations reveal the 1D features of patterned VSe₂. Further experimental characterization of the intermediate states in the growth process confirm the spontaneous formation of the 1D pattern by annealing-induced Se-deficient linear defects. The 1D pattern can be reversibly transformed to homogenous VSe₂ monolayer by reintroducing Se atoms. Moreover, additional experiments demonstrate that a dispersive deposition of Pt atoms along the 1D structures of patterned VSe₂ is achieved, while DFT calculations find that their catalytic activity for hydrogen evolution reaction (HER) is as good as that of Pt surfaces. The formation of long-range, well-ordered 1D patterns not only demonstrates an effective way of dimension modulation in 2D materials but also enriches the potential of intrinsically patterned 2D materials for promising catalytic activities.

Strongly Compressed Few-Layered SnSe2 Films Grown on a SrTiO3 Substrate: The Coexistence of Charge Ordering and Enhanced Interfacial Superconductivity

High pressure has been demonstrated to be a powerful approach of producing novel condensed-matter states, particularly in tuning the superconducting transition temperature (T_c) of the superconductivity in a clean fashion without involving the complexity of chemical doping. However, the challenge of high-pressure experiment hinders further in-depth research for underlying mechanisms. Here, we have successfully synthesized continuous layer-controllable SnSe₂ films on SrTiO₃ substrate using molecular beam epitaxy. By means of scanning tunneling microscopy/spectroscopy (STM/S) and Raman spectroscopy, we found that the strong compressive strain is intrinsically built in few-layers films, with a largest equivalent pressure up to 23 GPa in the monolayer. Upon this, unusual 2 × 2 charge ordering is induced at the occupied states in the monolayer, accompanied by prominent decrease in the density of states (DOS) near the Fermi energy (E_F), resembling the gap states of CDW reported in transition metal dichalcogenide (TMD) materials. Subsequently, the coexistence of charge ordering and the interfacial superconductivity is observed in bilayer films as a result of releasing the compressive strain. In conjunction with spatially resolved spectroscopic study and first-principles calculation, we find that the enhanced interfacial superconductivity with an estimated T_c of 8.3 K is observed only in the 1 × 1 region. Such superconductivity can be ascribed to a combined effect of interfacial charge transfer and compressive strain, which leads to a considerable downshift of the conduction band minimum and an increase in the DOS at E_F. Our results provide an attractive platform for further in-depth investigation of compression-induced charge ordering (monolayer) and the interplay between charge ordering and superconductivity (bilayer). Meanwhile, it has opened up a pathway to prepare strongly compressed two-dimensional materials by growing onto a SrTiO₃ substrate, which is promising to induce superconductivity with a higher T_c.

Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet

Monolayer VSe₂ , featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic 2D transition-metal dichalcogenides (2D-TMDs). Herein, by means of in situ microscopy and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d¹ electronic configuration in monolayer VSe₂ grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe₂ as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.

A family of high-temperature ferromagnetic monolayers with locked spin-dichroism-mobility anisotropy: MnNX and CrCX (X = Cl, Br, I; C = S, Se, Te)

Two-dimensional magnets have received increasing attention since Cr₂Ge₂Te₆ and CrI₃ were experimentally exfoliated and measured in 2017. Although layered ferromagnetic metals were demonstrated at room temperature, a layered ferromagnetic semiconductor with high Curie temperature (T_c) is yet to be unveiled. Here, we theoretically predicted a family of high T_c ferromagnetic monolayers, namely MnNX and CrCX (X = Cl, Br and I; C = S, Se and Te). Their T_c values were predicted from over 100 K to near 500 K with Monte Carlo simulations using an anisotropic Heisenberg model. Eight members among them show semiconducting bandgaps varying from roughly 0.23 to 1.85 eV. These semiconducting monolayers also show extremely large anisotropy, i.e. ∼10¹ for effective masses and ∼10² for carrier mobilities, along the two in-plane lattice directions of these layers. Additional orbital anisotropy leads to a spin-locked linear dichroism, in different from previously known circular and linear dichroisms in layered materials. Together with the mobility anisotropy, it offers a spin-, dichroism- and mobility-anisotropy locking. These results manifest the potential of this 2D family for both fundamental research and high performance spin-dependent electronic and optoelectronic devices.

Sub-millimeter-Scale Growth of One-Unit-Cell-Thick Ferrimagnetic Cr2S3 Nanosheets

Two-dimensional (2D) magnetic materials provide an ideal platform for the application in spintronic devices due to their unique spin states in nanometer scale. However, recent research on the exfoliated monolayer magnetic materials suffers from the instability in ambient atmosphere, which needs extraordinary protection. Hence the controllable synthesis of 2D magnetic materials with good quality and stability should be addressed. Here we report for the first time the van der Waals (vdW) epitaxial growth of one-unit-cell-thick air-stable ferrimagnet Cr₂S₃ semiconductor via a facile chemical vapor deposition method. Single crystal Cr₂S₃ with the domain size reaching to 200 μm is achieved. Most importantly, we observe the as grown Cr₂S₃ with a Néel temperature ( T_N) of up to 120 K and a maximum saturation magnetic momentum of up to 65 μemu. As the temperature decreases, the samples show a transition from soft magnet to hard magnet with the highest coercivity of 1000 Oe. The one-unit-cell-thick Cr₂S₃ devices show a p-type transfer behavior with an on/off ratio over 10³. Our work highlights Cr₂S₃ monolayer as an ideal magnetic semiconductor for 2D spintronic devices. The vdW epitaxy of nonlayered magnets introduces a new route for realizing magnetism in 2D limit and provides more application potential in the 2D spintronics.

Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit

Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe₂ on graphene substrates. Angle-resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe₂. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe₂. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.