2D Air-Stable Nonlayered Ferrimagnetic FeCr2S4 Crystals Synthesized via Chemical Vapor Deposition

The discovery of intrinsic 2D magnetic materials has opened up new opportunities for exploring magnetic properties at atomic layer thicknesses, presenting potential applications in spintronic devices. Here a new 2D ferrimagnetic crystal of nonlayered FeCr2S4 is synthesized with high phase purity using chemical vapor deposition. The obtained 2D FeCr2S4 exhibits perpendicular magnetic anisotropy, as evidenced by the out-of-plane/in-plane Hall effect and anisotropic magnetoresistance. Theoretical calculations further elucidate that the observed magnetic anisotropy can be attributed to its surface termination structure. By combining temperature-dependent magneto-transport and polarized Raman spectroscopy characterizations, it is discovered that both the measured Curie temperature and the critical temperature at which a low energy magnon peak disappeared remains constant, regardless of its thickness. Magnetic force microscopy measurements show the flipping process of magnetic domains. The exceptional air-stability of the 2D FeCr2S4 is also confirmed via Raman spectroscopy and Hall hysteresis loops. The robust anisotropic ferrimagnetism, the thickness-independent of Curie temperature, coupled with excellent air-stability, make 2D FeCr2S4 crystals highly attractive for future spintronic devices.

Controlled Growth of Submillimeter-Scale Cr5Te8 Nanosheets and the Domain Wall Nucleation Governed Magnetization Reversal Process

Two-dimensional (2D) ferromagnets have attracted widespread attention for promising applications in compact spintronic devices. However, the controlled synthesis of high-quality, large-sized, and ultrathin 2D magnets via facile, economical method remains challenging. Herein, we develop a hydrogen-tailored chemical vapor deposition approach to fabricating 2D Cr5Te8 ferromagnetic nanosheets. Interestingly, the time period of introducing hydrogen was found to be crucial for controlling the lateral size, and a Cr5Te8 single-crystalline nanosheet of lateral size up to ∼360 μm with single-unit-cell thickness has been obtained. These samples exhibit a leading role of domain wall nucleation in governing the magnetization reversal process, providing important references for optimizing the performances of associated devices. The nanosheets also show notable magnetotransport response, including nonmonotonous magnetic-field-dependent magnetoresistance and sizable anomalous Hall resistivity, demonstrating Cr5Te8 as a promising material for constructing high-performance magnetoelectronic devices. This study presents a breakthrough of large-sized CVD-grown 2D magnetic materials, which is indispensable for constructing 2D spintronic devices.

Nonlayered Tin Thiohypodiphosphate Nanosheets: Controllable Growth and Solar-Light-Driven Water Splitting

As a promising candidate in various fields, including energy conversion and electronics, layered van der Waals metal phosphorus trichalcogenides (MPX₃) have been widely explored. In addition to the layered structures, MPX₃ comprising post-transition metals (i.e., Sn and Pb) are known to form a unique 3D framework with nonlayered structure. However, the nonlayered two-dimensional (2D) crystals of this family have remained unexplored until now. Herein, we successfully synthesized 2D nonlayered tin thiohypodiphosphate (Sn₂P₂S₆) nanosheets, having an indirect bandgap of 2.25 eV and a thickness down to ∼10 nm. The as-obtained nanosheets demonstrate promising photocatalytic water splitting activity to generate H₂ in pure water under simulated solar light (AM 1.5G). Moreover, the ultrathin Sn₂P₂S₆ catalyst shows auspicious performance and stability with a continuous operation of 40 h. This work is not only an expansion of the MPX₃ family, but it is also a major milestone in the search for new materials for future energy conversion.

Printable Single-Unit-Cell-Thick Transparent Zinc-Doped Indium Oxides with Efficient Electron Transport Properties

Ultrathin transparent conductive oxides (TCOs) are emerging candidates for next-generation transparent electronics. Indium oxide (In₂O₃) incorporated with post-transition-metal ions (e.g., Sn) has been widely studied due to their excellent optical transparency and electrical conductivity. However, their electron transport properties are deteriorated at the ultrathin two-dimensional (2D) morphology compared to that of intrinsic In₂O₃. Here, we explore the domain of transition-metal dopants in ultrathin In₂O₃ with the thicknesses down to the single-unit-cell limit, which is realized in a large area using a low-temperature liquid metal printing technique. Zn dopant is selected as a representative to incorporate into the In₂O₃ rhombohedral crystal framework, which results in the gradual transition of the host to quasimetallic. While the optical transmittance is maintained above 98%, an electron field-effect mobility of up to 87 cm² V^-1 s^-1 and a considerable sub-kΩ^-1 cm^-1 ranged electrical conductivity are achieved when the Zn doping level is optimized, which are in a combination significantly improved compared to those of reported ultrathin TCOs. This work presents various opportunities for developing high-performance flexible transparent electronics based on emerging ultrathin TCO candidates.

Self-Confined Growth of Ultrathin 2D Nonlayered Wide-Bandgap Semiconductor CuBr Flakes

2D planar structures of nonlayered wide-bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self-confined chemical vapor deposition method is described. The enhanced spin-triplet exciton (Z_f , 2.98 eV) luminescence and polarization-enhanced second-harmonic generation based on the 2D CuBr flakes demonstrate the potential of short-wavelength luminescent applications. Solar-blind and self-driven ultraviolet (UV) photodetectors based on the as-synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W^-1 , an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 10¹¹ Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short-wavelength light-emitting devices, nonlinear optical devices, and UV photodetectors.

Sub-millimeter-Scale Growth of One-Unit-Cell-Thick Ferrimagnetic Cr2S3 Nanosheets

Two-dimensional (2D) magnetic materials provide an ideal platform for the application in spintronic devices due to their unique spin states in nanometer scale. However, recent research on the exfoliated monolayer magnetic materials suffers from the instability in ambient atmosphere, which needs extraordinary protection. Hence the controllable synthesis of 2D magnetic materials with good quality and stability should be addressed. Here we report for the first time the van der Waals (vdW) epitaxial growth of one-unit-cell-thick air-stable ferrimagnet Cr₂S₃ semiconductor via a facile chemical vapor deposition method. Single crystal Cr₂S₃ with the domain size reaching to 200 μm is achieved. Most importantly, we observe the as grown Cr₂S₃ with a Néel temperature ( T_N) of up to 120 K and a maximum saturation magnetic momentum of up to 65 μemu. As the temperature decreases, the samples show a transition from soft magnet to hard magnet with the highest coercivity of 1000 Oe. The one-unit-cell-thick Cr₂S₃ devices show a p-type transfer behavior with an on/off ratio over 10³. Our work highlights Cr₂S₃ monolayer as an ideal magnetic semiconductor for 2D spintronic devices. The vdW epitaxy of nonlayered magnets introduces a new route for realizing magnetism in 2D limit and provides more application potential in the 2D spintronics.

Anomalous Li Storage Capability in Atomically Thin Two-Dimensional Sheets of Nonlayered MoO2

Since the first exfoliation and identification of graphene in 2004, research on layered ultrathin two-dimensional (2D) nanomaterials has achieved remarkable progress. Realizing the special importance of 2D geometry, we demonstrate that the controlled synthesis of nonlayered nanomaterials in 2D geometry can yield some unique properties that otherwise cannot be achieved in these nonlayered systems. Herein, we report a systematic study involving theoretical and experimental approaches to evaluate the Li-ion storage capability in 2D atomic sheets of nonlayered molybdenum dioxide (MoO₂). We develop a novel monomer-assisted reduction process to produce high quality 2D sheets of nonlayered MoO₂. When used as lithium-ion battery (LIB) anodes, these ultrathin 2D-MoO₂ electrodes demonstrate extraordinary reversible capacity, as high as 1516 mAh g^-1 after 100 cycles at the current rate of 100 mA g^-1 and 489 mAh g^-1 after 1050 cycles at 1000 mA g^-1. It is evident that these ultrathin 2D sheets did not follow the normal intercalation-cum-conversion mechanism when used as LIB anodes, which was observed for their bulk analogue. Our ex situ XPS and XRD studies reveal a Li-storage mechanism in these 2D-MoO₂ sheets consisting of an intercalation reaction and the formation of metallic Li phase. In addition, the 2D-MoO₂ based microsupercapacitors exhibit high areal capacitance (63.1 mF cm^-2 at 0.1 mA cm^-2), good rate performance (81% retention from 0.1 to 2 mA cm^-2), and superior cycle stability (86% retention after 10,000 cycles). We believe that our work identifies a new pathway to make 2D nanostructures from nonlayered compounds, which results in an extremely enhanced energy storage capability.