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Yildiz F, Matsunaga T, Haga Y. Fabrication and Packaging of CMUT Using Low Temperature Co-Fired Ceramic. MICROMACHINES 2018; 9:mi9110553. [PMID: 30715052 PMCID: PMC6266907 DOI: 10.3390/mi9110553] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/11/2018] [Accepted: 10/24/2018] [Indexed: 11/23/2022]
Abstract
This paper presents fabrication and packaging of a capacitive micromachined ultrasonic transducer (CMUT) using anodically bondable low temperature co-fired ceramic (LTCC). Anodic bonding of LTCC with Au vias-silicon on insulator (SOI) has been used to fabricate CMUTs with different membrane radii, 24 µm, 25 µm, 36 µm, 40 µm and 60 µm. Bottom electrodes were directly patterned on remained vias after wet etching of LTCC vias. CMUT cavities and Au bumps were micromachined on the Si part of the SOI wafer. This high conductive Si was also used as top electrode. Electrical connections between the top and bottom of the CMUT were achieved by Au-Au bonding of wet etched LTCC vias and bumps during anodic bonding. Three key parameters, infrared images, complex admittance plots, and static membrane displacement, were used to evaluate bonding success. CMUTs with a membrane thickness of 2.6 µm were fabricated for experimental analyses. A novel CMUT-IC packaging process has been described following the fabrication process. This process enables indirect packaging of the CMUT and integrated circuit (IC) using a lateral side via of LTCC. Lateral side vias were obtained by micromachining of fabricated CMUTs and used to drive CMUTs elements. Connection electrodes are patterned on LTCC side via and a catheter was assembled at the backside of the CMUT. The IC was mounted on the bonding pad on the catheter by a flip-chip bonding process. Bonding performance was evaluated by measurement of bond resistance between pads on the IC and catheter. This study demonstrates that the LTCC and LTCC side vias scheme can be a potential approach for high density CMUT array fabrication and indirect integration of CMUT-IC for miniature size packaging, which eliminates problems related with direct integration.
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Affiliation(s)
- Fikret Yildiz
- Graduate School of Engineering, Tohoku University, 6-6 Aza-Aoba, Aramaki Aoba-ku, Sendai 980-8579, Japan.
- Faculty of Engineering, Hakkari University, Hakkari 30000, Turkey.
| | - Tadao Matsunaga
- Graduate School of Biomedical Engineering, Tohoku University, 6-6 Aza-Aoba, Aramaki Aoba-ku, Sendai 980-8579, Japan.
| | - Yoichi Haga
- Graduate School of Biomedical Engineering, Tohoku University, 6-6 Aza-Aoba, Aramaki Aoba-ku, Sendai 980-8579, Japan.
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Fully Solution-Processable Fabrication of Multi-Layered Circuits on a Flexible Substrate Using Laser Processing. MATERIALS 2018; 11:ma11020268. [PMID: 29425144 PMCID: PMC5848965 DOI: 10.3390/ma11020268] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/08/2018] [Revised: 02/02/2018] [Accepted: 02/05/2018] [Indexed: 01/22/2023]
Abstract
The development of printing technologies has enabled the realization of electric circuit fabrication on a flexible substrate. However, the current technique remains restricted to single-layer patterning. In this paper, we demonstrate a fully solution-processable patterning approach for multi-layer circuits using a combined method of laser sintering and ablation. Selective laser sintering of silver (Ag) nanoparticle-based ink is applied to make conductive patterns on a heat-sensitive substrate and insulating layer. The laser beam path and irradiation fluence are controlled to create circuit patterns for flexible electronics. Microvia drilling using femtosecond laser through the polyvinylphenol-film insulating layer by laser ablation, as well as sequential coating of Ag ink and laser sintering, achieves an interlayer interconnection between multi-layer circuits. The dimension of microvia is determined by a sophisticated adjustment of the laser focal position and intensity. Based on these methods, a flexible electronic circuit with chip-size-package light-emitting diodes was successfully fabricated and demonstrated to have functional operations.
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Dausch DE, Gilchrist KH, Carlson JB, Hall SD, Castellucci JB, von Ramm OT. In vivo real-time 3-D intracardiac echo using PMUT arrays. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2014; 61:1754-64. [PMID: 25265183 DOI: 10.1109/tuffc.2014.006452] [Citation(s) in RCA: 37] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Piezoelectric micromachined ultrasound transducer (PMUT) matrix arrays were fabricated containing novel through-silicon interconnects and integrated into intracardiac catheters for in vivo real-time 3-D imaging. PMUT arrays with rectangular apertures containing 256 and 512 active elements were fabricated and operated at 5 MHz. The arrays were bulk micromachined in silicon-on-insulator substrates, and contained flexural unimorph membranes comprising the device silicon, lead zirconate titanate (PZT), and electrode layers. Through-silicon interconnects were fabricated by depositing a thin-film conformal copper layer in the bulk micromachined via under each PMUT membrane and photolithographically patterning this copper layer on the back of the substrate to facilitate contact with the individually addressable matrix array elements. Cable assemblies containing insulated 45-AWG copper wires and a termination silicon substrate were thermocompression bonded to the PMUT substrate for signal wire interconnection to the PMUT array. Side-viewing 14-Fr catheters were fabricated and introduced through the femoral vein in an adult porcine model. Real-time 3-D images were acquired from the right atrium using a prototype ultrasound scanner. Full 60° × 60° volume sectors were obtained with penetration depth of 8 to 10 cm at frame rates of 26 to 31 volumes per second.
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Design and Performance Analysis of Capacitive Micromachined Ultrasonic Transducer Linear Array. MICROMACHINES 2014. [DOI: 10.3390/mi5030420] [Citation(s) in RCA: 26] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Yang Y, Tian H, Wang YF, Shu Y, Zhou CJ, Sun H, Zhang CH, Chen H, Ren TL. An ultra-high element density pMUT array with low crosstalk for 3-D medical imaging. SENSORS 2013; 13:9624-34. [PMID: 23896705 PMCID: PMC3812571 DOI: 10.3390/s130809624] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/13/2013] [Revised: 07/17/2013] [Accepted: 07/19/2013] [Indexed: 11/30/2022]
Abstract
A ~1 MHz piezoelectric micromachined ultrasonic transducer (pMUT) array with ultra-high element density and low crosstalk is proposed for the first time. This novel pMUT array is based on a nano-layer spin-coating lead zirconium titanium film technique and can be fabricated with high element density using a relatively simple process. Accordingly, key fabrication processes such as thick piezoelectric film deposition, low-stress Si-SOI bonding and bulk silicon removal have been successfully developed. The novel fine-pitch 6 × 6 pMUT arrays can all work at the desired frequency (~1 MHz) with good uniformity, high performance and potential IC integration compatibility. The minimum interspace is ~20 μm, the smallest that has ever been achieved to the best of our knowledge. These arrays can be potentially used to steer ultrasound beams and implement high quality 3-D medical imaging applications.
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Affiliation(s)
- Yi Yang
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China; E-Mails: (Y.Y.); (H.T.); (Y.-F.W.); (Y.S.); (C.-J.Z.); (H.S.); (C.-H.Z.); (H.C.)
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - He Tian
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China; E-Mails: (Y.Y.); (H.T.); (Y.-F.W.); (Y.S.); (C.-J.Z.); (H.S.); (C.-H.Z.); (H.C.)
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Yu-Feng Wang
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China; E-Mails: (Y.Y.); (H.T.); (Y.-F.W.); (Y.S.); (C.-J.Z.); (H.S.); (C.-H.Z.); (H.C.)
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Yi Shu
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China; E-Mails: (Y.Y.); (H.T.); (Y.-F.W.); (Y.S.); (C.-J.Z.); (H.S.); (C.-H.Z.); (H.C.)
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Chang-Jian Zhou
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China; E-Mails: (Y.Y.); (H.T.); (Y.-F.W.); (Y.S.); (C.-J.Z.); (H.S.); (C.-H.Z.); (H.C.)
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Hui Sun
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China; E-Mails: (Y.Y.); (H.T.); (Y.-F.W.); (Y.S.); (C.-J.Z.); (H.S.); (C.-H.Z.); (H.C.)
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Cang-Hai Zhang
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China; E-Mails: (Y.Y.); (H.T.); (Y.-F.W.); (Y.S.); (C.-J.Z.); (H.S.); (C.-H.Z.); (H.C.)
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Hao Chen
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China; E-Mails: (Y.Y.); (H.T.); (Y.-F.W.); (Y.S.); (C.-J.Z.); (H.S.); (C.-H.Z.); (H.C.)
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China; E-Mails: (Y.Y.); (H.T.); (Y.-F.W.); (Y.S.); (C.-J.Z.); (H.S.); (C.-H.Z.); (H.C.)
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
- Author to whom correspondence should be addressed; E-Mail: ; Tel.: +86-10-6279-8569; Fax: +86-10-6277-1130
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Wong SH, Kupnik M, Watkins RD, Butts-Pauly K, Khuri-Yakub BTP. Capacitive micromachined ultrasonic transducers for therapeutic ultrasound applications. IEEE Trans Biomed Eng 2009; 57:114-23. [PMID: 19628448 DOI: 10.1109/tbme.2009.2026909] [Citation(s) in RCA: 35] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Abstract
Therapeutic ultrasound guided by MRI is a noninvasive treatment that potentially reduces mortality, lowers medical costs, and widens accessibility of treatments for patients. Recent developments in the design and fabrication of capacitive micromachined ultrasonic transducers (CMUTs) have made them competitive with piezoelectric transducers for use in therapeutic ultrasound applications. In this paper, we present the first designs and prototypes of an eight-element, concentric-ring, CMUT array to treat upper abdominal cancers. This array was simulated and designed to focus 30-50 mm into tissue, and ablate a 2- to 3-cm-diameter tumor within 1 h. Assuming a surface acoustic output pressure of 1 MPa peak-to-peak (8.5 W/cm (2)) at 2.5 MHz, we simulated an array that produced a focal intensity of 680 W/cm (2) when focusing to 35 mm. CMUT cells were then designed to meet these frequency and surface acoustic intensity specifications. These cell designs were fabricated as 2.5 mm x 2.5 mm test transducers and used to verify our models. The test transducers were shown to operate at 2.5 MHz with an output pressure of 1.4 MPa peak-to-peak (16.3 W/cm (2)). With this CMUT cell design, we fabricated a full eight-element array. Due to yield issues, we only developed electronics to focus the four center elements of the array. The beam profile of the measured array deviated from the simulated one because of the crosstalk effects; the beamwidth matched within 10% and sidelobes increased by two times, which caused the measured gain to be 16.6 compared to 27.4.
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Affiliation(s)
- Serena H Wong
- Department of Electrical Engineering, Stanford University, Stanford, CA 94309, USA.
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Zhuang X, Wygant IO, Lin DS, Kupnik M, Oralkan O, Khuri-Yakub BT. Wafer-bonded 2-D CMUT arrays incorporating through-wafer trench-isolated interconnects with a supporting frame. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2009; 56:182-192. [PMID: 19213645 DOI: 10.1109/tuffc.2009.1018] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
This paper reports on wafer-bonded, fully populated 2-D capacitive micromachined ultrasonic transducer (CMUT) arrays. To date, no successful through-wafer via fabrication technique has been demonstrated that is compatible with the wafer-bonding method of making CMUT arrays. As an alternative to through-wafer vias, trench isolation with a supporting frame is incorporated into the 2-D arrays to provide through-wafer electrical connections. The CMUT arrays are built on a silicon-on-insulator (SOI) wafer, and all electrical connections to the array elements are brought to the back side of the wafer through the highly conductive silicon substrate. Neighboring array elements are separated by trenches on both the device layer and the bulk silicon. A mesh frame structure, providing mechanical support, is embedded between silicon pillars, which electrically connect to individual elements. We successfully fabricated a 16 x 16-element 2-D CMUT array using wafer bonding with a yield of 100%. Across the array, the pulse-echo amplitude distribution is uniform (rho = 6.6% of the mean amplitude). In one design, we measured a center frequency of 7.6 MHz, a peak-to-peak output pressure of 2.9 MPa at the transducer surface, and a 3-dB fractional bandwidth of 95%. Volumetric ultrasound imaging was demonstrated by chip-to-chip bonding one of the fabricated 2-D arrays to a custom-designed integrated circuit (IC). This study shows that through-wafer trench-isolation with a supporting frame is a viable solution for providing electrical interconnects to CMUT elements and that 2-D arrays fabricated using waferbonding deliver good performance.
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Affiliation(s)
- Xuefeng Zhuang
- Edward L Ginzton Laboratory, Stanford University, Stanford, CA, USA.
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Dausch DE, Castellucci JB, Chou DR, von Ramm OT. Theory and operation of 2-D array piezoelectric micromachined ultrasound transducers. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2008; 55:2484-2492. [PMID: 19049928 DOI: 10.1109/tuffc.956] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Piezoelectric micromachined ultrasound transducers (pMUTs) are a new approach for the construction of 2-D arrays for forward-looking 3-D intravascular (IVUS) and intracardiac (ICE) imaging. Two-dimensional pMUT test arrays containing 25 elements (5 x 5 arrays) were bulk micromachined in silicon substrates. The devices consisted of lead zirconate titanate (PZT) thin film membranes formed by deep reactive ion etching of the silicon substrate. Element widths ranged from 50 to 200 microm with pitch from 100 to 300 mum. Acoustic transmit properties were measured in de-ionized water with a calibrated hydrophone placed at a range of 20 mm. Measured transmit frequencies for the pMUT elements ranged from 4 to 13 MHz, and mode of vibration differed for the various element sizes. Element capacitance varied from 30 to over 400 pF depending on element size and PZT thickness. Smaller element sizes generally produced higher acoustic transmit output as well as higher frequency than larger elements. Thicker PZT layers also produced higher transmit output per unit electric field applied. Due to flexure mode operation above the PZT coercive voltage, transmit output increased nonlinearly with increased drive voltage. The pMUT arrays were attached directly to the Duke University T5 Phased Array Scanner to produce real-time pulse-echo B-mode images with the 2-D pMUT arrays.
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Affiliation(s)
- David E Dausch
- RTI International, Center for Materials and Electronic Technologies, Research Triangle Park, NC, USA.
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