Comparison of first moment STEM with conventional differential phase contrast and the dependence on electron dose

GaN atomic electric fields from a segmented STEM detector: Experiment and simulation

Atomic electric fields in a thin GaN sample are measured with the centre-of-mass approach in 4D-scanning transmission electron microscopy (4D-STEM) using a 12-segmented STEM detector in a Spectra 300 microscope. The electric fields, charge density and potential are compared to simulations and an experimental measurement using a pixelated 4D-STEM detector. The segmented detector benefits from a high recording speed, which enables measurements at low radiation doses. However, there is measurement uncertainty due to the limited number of segments analysed in this study.

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves)

We demonstrate the use of both pixelated differential phase contrast (DPC) scanning transmission electron microscopy (STEM) and off-axis electron holography (EH) for the measurement of electric fields and assess the advantages and limitations of each technique when applied to technologically relevant samples. Three different types of samples are examined, firstly a simple highly-doped Si pn junction. Then a SiGe superlattice is examined to evaluate the effects of the mean inner potential on the measured signal. Finally, an InGaN/GaN microwire light-emitting diode (LED) device is examined which has a polarization field, variations of mean inner potential and a wurtzite crystal lattice. We discuss aspects such as spatial resolution and sensitivity, and the concept of pseudo-field is defined. However, the most important point is the need to limit the influence of diffraction contrast to obtain accurate measurements. In this respect, the use of a plane electron wave for EH is clearly beneficial when compared to the use of a convergent beam for pixelated DPC STEM.

Advanced processing of differential phase contrast data: Distinction between different causes of electron phase shifts

Differential phase contrast, in its high resolution modification also known as first moment microscopy or momentum resolved STEM [1-7] , basically measures the lateral momentum transfer to the electron probe due to the beam interaction with either electrostatic and/or magnetic fields, when the probe transmits the specimen. In other words, the result of the measurement is a vector field p→(x,y) which describes the lateral momentum transfer to the probe electrons. In the case of electric fields, this momentum transfer is easily converted to the electric field E→(x,y) causing the deflection, and from ϱ=ɛ₀∇⋅E→ the local charge density can be calculated from the divergence of the electric field. However, from experimental data it is known that also the calculation of the vector field's curl ∇→×p→ in general yields non-zero results. In this paper, we use the Helmholtz decomposition (Wikipedia contributors, 2022), also known as the fundamental theorem of vector calculus, to split the measured vector fields into their curl-free and divergence-free components and to interpret the physical meaning of these components in detail. It will be shown, that non-zero curl components may be used to measure geometric phases occurring from irregularities in crystal structure such as a screw dislocation.

Optimized detector configurations for the reconstruction of phase-contrast images in scanning transmission electron microscopy

Using the differential phase contrast mechanism and anti-symmetric detector geometries it is possible to image distributions of electric and magnetic fields in a scanning transmission electron microscope. Different detector geometries can be used for imaging and, due to their efficiency, mainly ring quadrant detectors and pixelated detectors have been used in recent high resolution differential phase contrast experiments. In 4D-Scanning Transmission Electron Microscopy one uses a pixelated (2D) detector to obtain the complete scattering distribution for every (2D) image point. The accuracy of pixelated detectors increases with an increasing number of pixels, which in turn also leads to a larger amount of data that needs to be evaluated. To reduce the required numerical effort, we are looking for alternative detector geometries by further segmenting ring quadrant detectors. To compare the different geometries, their signal-to-noise ratios are calculated for an ideal STEM and several weak phase objects. Images can be obtained by combining the data of different detector pixels using a scheme similar to a reconstruction from a focal series. The procedure can be interpreted as the simplest example of ptychography including only the first-order diffraction disks. Our results show that a 50-segment annular bright-field detector can reach a signal-to-noise ratio close to that of a 128 × 128 pixelated detector, while having a significantly lower number of segments that need to be evaluated.

Phase imaging in scanning transmission electron microscopy using bright-field balanced divergency method

We introduce a phase imaging mechanism for scanning transmission electron microscopy that exploits the complementary intensity changes of transmitted disks at different scattering angles. For scanning transmission electron microscopy, this method provides a straightforward, dose-efficient, and noise-robust phase imaging, from atomic resolution to intermediate length scales, as a function of scattering angles and probe defocus. At atomic resolution, we demonstrate that the phase imaging using the method can detect both light and heavy atomic columns. Furthermore, we experimentally apply the method to the imaging of nanoscale magnetic phases in FeGe samples. Compared with conventional methods, phase retrieval using the new method has higher effective spatial resolution and robustness to non-phase background contrast. Our method complements traditional phase imaging modalities in electron microscopy and has the potential to be extended to other scanning transmission techniques and to characterize many emerging material systems.

Factors limiting quantitative phase retrieval in atomic-resolution differential phase contrast scanning transmission electron microscopy using a segmented detector

Quantitative differential phase contrast imaging of materials in atomic-resolution scanning transmission electron microscopy using segmented detectors is limited by various factors, including coherent and incoherent aberrations, detector positioning and uniformity, and scan-distortion. By comparing experimental case studies of monolayer and few-layer graphene with image simulations, we explore which parameters require the most precise characterisation for reliable and quantitative interpretation of the reconstructed phases. Coherent and incoherent lens aberrations are found to have the most significant impact. For images over a large field of view, the impact of noise and non-periodic boundary conditions are appreciable, but in this case study have less of an impact than artefacts introduced by beam deflections coupling to beam scanning (imperfect tilt-shift purity).

Event driven 4D STEM acquisition with a Timepix3 detector: Microsecond dwell time and faster scans for high precision and low dose applications

Four dimensional scanning transmission electron microscopy (4D STEM) records the scattering of electrons in a material in great detail. The benefits offered by 4D STEM are substantial, with the wealth of data it provides facilitating for instance high precision, high electron dose efficiency phase imaging via centre of mass or ptychography based analysis. However the requirement for a 2D image of the scattering to be recorded at each probe position has long placed a severe bottleneck on the speed at which 4D STEM can be performed. Recent advances in camera technology have greatly reduced this bottleneck, with the detection efficiency of direct electron detectors being especially well suited to the technique. However even the fastest frame driven pixelated detectors still significantly limit the scan speed which can be used in 4D STEM, making the resulting data susceptible to drift and hampering its use for low dose beam sensitive applications. Here we report the development of the use of an event driven Timepix3 direct electron camera that allows us to overcome this bottleneck and achieve 4D STEM dwell times down to 100 ns; orders of magnitude faster than what has been possible with frame based readout. We characterize the detector for different acceleration voltages and show that the method is especially well suited for low dose imaging and promises rich datasets without compromising dwell time when compared to conventional STEM imaging.

Atomic Electrostatic Maps of Point Defects in MoS2

In this study, we use differential phase contrast images obtained by scanning transmission electron microscopy combined with computer simulations to map the atomic electrostatic fields of MoS₂ monolayers and investigate the effect of sulfur monovacancies and divancancies on the atomic electric field and total charge distribution. A significant redistribution of the electric field in the regions containing defects is observed, with a progressive decrease in the strength of the projected electric field for each sulfur atom removed from its position. The electric field strength at the sulfur monovacancy sites is reduced by approximately 50% and nearly vanishes at the divacancy sites, where it drops to around 15% of the original value, demonstrating the tendency of these defects to attract positively charged ions or particles. In addition, the absence of the sulfur atoms leads to an inversion in the polarity of the total charge distribution in these regions.

Prismatic 2.0 - Simulation software for scanning and high resolution transmission electron microscopy (STEM and HRTEM)

Scanning transmission electron microscopy (STEM), where a converged electron probe is scanned over a sample's surface and an imaging, diffraction, or spectroscopic signal is measured as a function of probe position, is an extremely powerful tool for materials characterization. The widespread adoption of hardware aberration correction, direct electron detectors, and computational imaging methods have made STEM one of the most important tools for atomic-resolution materials science. Many of these imaging methods rely on accurate imaging and diffraction simulations in order to interpret experimental results. However, STEM simulations have traditionally required large calculation times, as modeling the electron scattering requires a separate simulation for each of the typically millions of probe positions. We have created the Prismatic simulation code for fast simulation of STEM experiments with support for multi-CPU and multi-GPU (graphics processing unit) systems, using both the conventional multislice and our recently-introduced PRISM method. In this paper, we introduce Prismatic version 2.0, which adds many new algorithmic improvements, an updated graphical user interface (GUI), post-processing of simulation data, and additional operating modes such as plane-wave TEM. We review various aspects of the simulation methods and codes in detail and provide various simulation examples. Prismatic 2.0 is freely available both as an open-source package that can be run using a C++ or Python command line interface, or GUI, as well within a Docker container environment.

Spatial Mapping of Electrostatic Fields in 2D Heterostructures

In situ electron microscopy is an effective tool for understanding the mechanisms driving novel phenomena in 2D structures. However, due to practical challenges, it is difficult to address these technologically relevant 2D heterostructures with electron microscopy. Here, we use the differential phase contrast (DPC) imaging technique to build a methodology for probing local electrostatic fields during electrical operation with nanoscale spatial resolution in such materials. We find that, by combining a traditional DPC setup with a high-pass filter, we can largely eliminate electric fluctuations emanating from short-range atomic potentials. Using a method based on this filtering algorithm, a priori electric field expectations can be directly compared with experimentally derived values to readily identify inhomogeneities and potentially problematic regions. We use this platform to analyze the electric field and charge density distribution across layers of hBN and MoS₂.

Advances and Applications of Atomic-Resolution Scanning Transmission Electron Microscopy

Although scanning transmission electron microscopy (STEM) images of individual heavy atoms were reported 50 years ago, the applications of atomic-resolution STEM imaging became wide spread only after the practical realization of aberration correctors on field-emission STEM/TEM instruments to form sub-Ångstrom electron probes. The innovative designs and advances of electron optical systems, the fundamental understanding of electron–specimen interaction processes, and the advances in detector technology all played a major role in achieving the goal of atomic-resolution STEM imaging of practical materials. It is clear that tremendous advances in computer technology and electronics, image acquisition and processing algorithms, image simulations, and precision machining synergistically made atomic-resolution STEM imaging routinely accessible. It is anticipated that further hardware/software development is needed to achieve three-dimensional atomic-resolution STEM imaging with single-atom chemical sensitivity, even for electron-beam-sensitive materials. Artificial intelligence, machine learning, and big-data science are expected to significantly enhance the impact of STEM and associated techniques on many research fields such as materials science and engineering, quantum and nanoscale science, physics and chemistry, and biology and medicine. This review focuses on advances of STEM imaging from the invention of the field-emission electron gun to the realization of aberration-corrected and monochromated atomic-resolution STEM and its broad applications.

py4DSTEM: A Software Package for Four-Dimensional Scanning Transmission Electron Microscopy Data Analysis

Scanning transmission electron microscopy (STEM) allows for imaging, diffraction, and spectroscopy of materials on length scales ranging from microns to atoms. By using a high-speed, direct electron detector, it is now possible to record a full two-dimensional (2D) image of the diffracted electron beam at each probe position, typically a 2D grid of probe positions. These 4D-STEM datasets are rich in information, including signatures of the local structure, orientation, deformation, electromagnetic fields, and other sample-dependent properties. However, extracting this information requires complex analysis pipelines that include data wrangling, calibration, analysis, and visualization, all while maintaining robustness against imaging distortions and artifacts. In this paper, we present py4DSTEM, an analysis toolkit for measuring material properties from 4D-STEM datasets, written in the Python language and released with an open-source license. We describe the algorithmic steps for dataset calibration and various 4D-STEM property measurements in detail and present results from several experimental datasets. We also implement a simple and universal file format appropriate for electron microscopy data in py4DSTEM, which uses the open-source HDF5 standard. We hope this tool will benefit the research community and help improve the standards for data and computational methods in electron microscopy, and we invite the community to contribute to this ongoing project.

The differential phase contrast uncertainty relation: Connection between electron dose and field resolution

Differential phase contrast (DPC) microscopy is a STEM imaging technique, which is used to measure magnetic and electric fields of mesoscopic and nanoscopic dimensions, i.e. interatomic distances (Chapman et al. 1978; Chapman et al. 1981; Chapman, 1984; Chapman et al. 1985; Chapman et al. 1997; Lohr et al. 2012; Shibata et al. 2015; Bauer et al. 2014; Carvalho et al. 2016; Lohr et al. 2016; Mueller-Caspary et al. 2019a,2019b; Mueller-Caspary et al. 2018; Mueller-Caspary et al. 2017; Mueller-Caspary et al. 2014; Winkler et al. 2020; Toyama et al. 2020). In this paper we will demonstrate that the electron dose per pixel deposited on the specimen is decisive to the precision and resolution of measurements of a field's local strength. Relations are given which connect a given electron dose per pixel to the fundamentally achievable precision to which the specimen's interaction with the electrons may be determined, taking into account quantum mechanical considerations. Vice versa, given a certain required precision, the required dose per pixel can be easily predicted for reliable measurements of a desired property. First, these relations are given for the case of a continuous, i.e. non-pixelated, detector followed by simulations which show that the same relations hold for pixelated detectors. Then, the achievable precision for detectors with different pixel counts in combination with different camera lengths is discussed and the maximum measurable field amplitude per set-up is determined. Finally, the effect of inhomogeneities within the diffraction disk is discussed and possible deviations from the derived relations are considered. We also demonstrate that Heisenberg's uncertainty relation determines the possible field resolution in differential phase contrast microscopy, and that the achievable local field resolution is a function of the applied electron dose per pixel.

Deep learning in electron microscopy

Deep learning is transforming most areas of science and technology, including electron microscopy. This review paper offers a practical perspective aimed at developers with limited familiarity. For context, we review popular applications of deep learning in electron microscopy. Following, we discuss hardware and software needed to get started with deep learning and interface with electron microscopes. We then review neural network components, popular architectures, and their optimization. Finally, we discuss future directions of deep learning in electron microscopy.

Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si

The angle-resolved electron scattering is investigated in scanning-transmission electron microscopy (STEM) using a motorised iris aperture placed above a conventional annular detector. The electron intensity scattered into various angle ranges is compared with simulations that were carried out in the frozen-lattice approximation. As figure of merit for the agreement of experiment and simulation we evaluate the specimen thickness which is compared with the thickness obtained from position-averaged convergent beam electron diffraction (PACBED). We find deviations whose strengths depend on the angular range of the detected electrons. As possible sources of error we investigate, for example, the influences of amorphous surface layers, inelastic scattering (plasmon excitation), phonon-correlation within the frozen-lattice approach, and distortions in the diffraction plane of the microscope. The evaluation is performed for four experimental thicknesses and two angle-resolved STEM series under different camera lengths. The results clearly show that especially for scattering angles below 50 mrad, it is mandatory that the simulations take scattering effects into account which are usually neglected for simulating high-angle scattering. Most influences predominantly affect the low-angle range, but also high scattering angles can be affected (e.g. by amorphous surface covering).

Atom column detection from simultaneously acquired ABF and ADF STEM images

In electron microscopy, the maximum a posteriori (MAP) probability rule has been introduced as a tool to determine the most probable atomic structure from high-resolution annular dark-field (ADF) scanning transmission electron microscopy (STEM) images exhibiting low contrast-to-noise ratio (CNR). Besides ADF imaging, STEM can also be applied in the annular bright-field (ABF) regime. The ABF STEM mode allows to directly visualize light-element atomic columns in the presence of heavy columns. Typically, light-element nanomaterials are sensitive to the electron beam, limiting the incoming electron dose in order to avoid beam damage and leading to images exhibiting low CNR. Therefore, it is of interest to apply the MAP probability rule not only to ADF STEM images, but to ABF STEM images as well. In this work, the methodology of the MAP rule, which combines statistical parameter estimation theory and model-order selection, is extended to be applied to simultaneously acquired ABF and ADF STEM images. For this, an extension of the commonly used parametric models in STEM is proposed. Hereby, the effect of specimen tilt has been taken into account, since small tilts from the crystal zone axis affect, especially, ABF STEM intensities. Using simulations as well as experimental data, it is shown that the proposed methodology can be successfully used to detect light elements in the presence of heavy elements.

Emerging Electron Microscopy Techniques for Probing Functional Interfaces in Energy Materials

Interfaces play a fundamental role in many areas of chemistry. However, their localized nature requires characterization techniques with high spatial resolution in order to fully understand their structure and properties. State-of-the-art atomic resolution or in situ scanning transmission electron microscopy and electron energy-loss spectroscopy are indispensable tools for characterizing the local structure and chemistry of materials with single-atom resolution, but they are not able to measure many properties that dictate function, such as vibrational modes or charge transfer, and are limited to room-temperature samples containing no liquids. Here, we outline emerging electron microscopy techniques that are allowing these limitations to be overcome and highlight several recent studies that were enabled by these techniques. We then provide a vision for how these techniques can be paired with each other and with in situ methods to deliver new insights into the static and dynamic behavior of functional interfaces.

Four-Dimensional Scanning Transmission Electron Microscopy (4D-STEM): From Scanning Nanodiffraction to Ptychography and Beyond

Scanning transmission electron microscopy (STEM) is widely used for imaging, diffraction, and spectroscopy of materials down to atomic resolution. Recent advances in detector technology and computational methods have enabled many experiments that record a full image of the STEM probe for many probe positions, either in diffraction space or real space. In this paper, we review the use of these four-dimensional STEM experiments for virtual diffraction imaging, phase, orientation and strain mapping, measurements of medium-range order, thickness and tilt of samples, and phase contrast imaging methods, including differential phase contrast, ptychography, and others.