1
|
Alikin D, Safina V, Abramov A, Slautin B, Shur V, Pavlenko A, Kholkin A. Defining ferroelectric characteristics with reversible piezoresponse: PUND switching spectroscopy PFM characterization. NANOTECHNOLOGY 2024; 35:175702. [PMID: 38181439 DOI: 10.1088/1361-6528/ad1b97] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Accepted: 01/05/2024] [Indexed: 01/07/2024]
Abstract
Detecting ferroelectricity at micro- and nanoscales is crucial for advanced nanomaterials and materials with complicated topography. Switching spectroscopy piezoresponse force microscopy (SSPFM), which involves measuring piezoelectric hysteresis loops via a scanning probe microscopy tip, is a widely accepted approach to characterize polarization reversal at the local scale and confirm ferroelectricity. However, the local hysteresis loops acquired through this method often exhibit unpredictable shapes, a phenomenon often attributed to the influence of parasitic factors such as electrostatic forces and current flow. Our research has uncovered that the deviation in hysteresis loop shapes can be caused by spontaneous backswitching occurring after polarization reversal. Moreover, we've determined that the extent of this effect can be exacerbated when employing inappropriate SSPFM waveform parameters, including duration, frequency, and AC voltage amplitude. Notably, the conventional 'pulse-mode' SSPFM method has been found to intensify spontaneous backswitching. In response to these challenges, we have redesigned SSPFM approach by introducing the positive up-negative down (PUND) method within the 'step-mode' SSPFM. This modification allows for effective probing of local piezoelectric hysteresis loops in ferroelectrics with reversible piezoresponse while removing undesirable electrostatic contribution. This advancement extends the applicability of the technique to a diverse range of ferroelectrics, including semiconductor ferroelectrics and relaxors, promising a more reliable and accurate characterization of their properties.
Collapse
Affiliation(s)
- Denis Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Violetta Safina
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Alexander Abramov
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Boris Slautin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Vladimir Shur
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Anatoly Pavlenko
- Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don, Russia
| | - Andrei Kholkin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| |
Collapse
|
2
|
Deng M, Wang X, Xu X, Cui A, Jiang K, Zhang J, Zhu L, Shang L, Li Y, Hu Z, Chu J. Directly measuring flexoelectric coefficients μ11 of the van der Waals materials. MATERIALS HORIZONS 2023; 10:1309-1323. [PMID: 36692359 DOI: 10.1039/d2mh00984f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Flexoelectricity originates from the electromechanical coupling interaction between strain gradient and polarization, broadly applied in developing electromechanical and energy devices. However, the study of quantifying the longitudinal flexoelectric coefficient (μ11) which is important for the application of atomic-scale two-dimensional (2D) materials is still in a slow-moving stage, owing to the technical challenges. Based on the free-standing suspension structure, this paper proposes a widely applicable method and a mensurable formula for determining the μ11 constant of layer-dependent 2D materials with high precision. A combination of in situ micro-Raman spectroscopy and piezoresponse force microscopy (PFM) imaging was used to quantify the strain distribution and effective out-of-plane electromechanical coupling, respectively, for μ11 constant calculation. The μ11 constants and their physical correlation with the variable mechanical conditions of naturally bent structures have been obtained extensively for the representative mono-to-few layered MX2 family (M = W and Mo; X = S and Se), and the result is perfectly consistent with the estimated order-of-magnitude of the μ11 value (about 0.065) of monolayer MoS2. The quantification of the flexoelectric constant in this work not only promotes the understanding of mechanical and electromechanical properties in van der Waals materials, but also paves the way for developing novel 2D nano-energy devices and mechanical transducers based on flexoelectric effects.
Collapse
Affiliation(s)
- Menghan Deng
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xionghu Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| |
Collapse
|
3
|
Pineda-Domínguez PM, Boll T, Nogan J, Heilmaier M, Hurtado-Macías A, Ramos M. The Piezoresponse in WO 3 Thin Films Due to N 2-Filled Nanovoids Enrichment by Atom Probe Tomography. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1387. [PMID: 36837019 PMCID: PMC9960742 DOI: 10.3390/ma16041387] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Revised: 02/02/2023] [Accepted: 02/04/2023] [Indexed: 06/18/2023]
Abstract
Tungsten trioxide (WO3) is a versatile n-type semiconductor with outstanding chromogenic properties highly used to fabricate sensors and electrochromic devices. We present a comprehensive experimental study related to piezoresponse with piezoelectric coefficient d33 = 35 pmV-1 on WO3 thin films ~200 nm deposited using RF-sputtering onto alumina (Al2O3) substrate with post-deposit annealing treatment of 400 °C in a 3% H2/N2-forming gas environment. X-ray diffraction (XRD) confirms a mixture of orthorhombic and tetragonal phases of WO3 with domains with different polarization orientations and hysteresis behavior as observed by piezoresponse force microscopy (PFM). Furthermore, using atom probe tomography (APT), the microstructure reveals the formation of N2-filled nanovoids that acts as strain centers producing a local deformation of the WO3 lattice into a non-centrosymmetric structure, which is related to piezoresponse observations.
Collapse
Affiliation(s)
- Pamela M. Pineda-Domínguez
- Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Avenida del Charro 450 N, Cd. Juárez, Chihuahua 32310, Mexico
| | - Torben Boll
- Institut für Angewandte Materialien-Werkstoffkunde (IAM-WK), Karlsruhe Institute of Technology, Engelbert-Arnold-Strasse 4, 76131 Karlsruhe, Germany
- Karlsruhe Nano Micro Facility (KNMFi), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
- Institute for Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - John Nogan
- Center for Integrated Nanotechnologies, 1101 Eubank Bldg. SE, Albuquerque, NM 87110, USA
| | - Martin Heilmaier
- Institut für Angewandte Materialien-Werkstoffkunde (IAM-WK), Karlsruhe Institute of Technology, Engelbert-Arnold-Strasse 4, 76131 Karlsruhe, Germany
| | - Abel Hurtado-Macías
- Laboratorio Nacional de Nanotecnología, Centro de Investigación en Materiales Avanzados S.C., Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua 31109, Mexico
| | - Manuel Ramos
- Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Avenida del Charro 450 N, Cd. Juárez, Chihuahua 32310, Mexico
| |
Collapse
|
4
|
Zeng Q, Huang Q, Wang H, Li C, Fan Z, Chen D, Cheng Y, Zeng K. Breaking the Fundamental Limitations of Nanoscale Ferroelectric Characterization: Non-Contact Heterodyne Electrostrain Force Microscopy. SMALL METHODS 2021; 5:e2100639. [PMID: 34927968 DOI: 10.1002/smtd.202100639] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Revised: 09/09/2021] [Indexed: 06/14/2023]
Abstract
Perceiving nanoscale ferroelectric phenomena from real space is of great importance for elucidating underlying ferroelectric physics. During the past decades, nanoscale ferroelectric characterization has mainly relied on the Piezoresponse Force Microscopy (PFM) invented in 1992, however, the fundamental limitations of PFM have made the nanoscale ferroelectric studies encounter significant bottlenecks. In this study, a high-resolution non-contact ferroelectric measurement, named Non-Contact Heterodyne Electrostrain Force Microscopy (NC-HEsFM), is introduced. It is demonstrated that NC-HEsFM can operate on multiple eigenmodes to perform ideal high-resolution ferroelectric domain mapping, standard ferroelectric hysteresis loop measurement, and controllable domain manipulation. By using a quartz tuning fork (QTF) sensor, multi-frequency operation, and heterodyne detection schemes, NC-HEsFM achieves a real non-contact yet non-destructive ferroelectric characterization with negligible electrostatic force effect and hence breaks the fundamental limitations of the conventional PFM. It is believed that NC-HEsFM can be extensively used in various ferroelectric or piezoelectric studies with providing substantially improved characterization performance. Meanwhile, the QTF-based force detection makes NC-HEsFM highly compatible for high-vacuum and low-temperature environments, providing ideal conditions for investigating the intrinsic ferroelectric phenomena with the possibility of achieving an atomically resolved ferroelectric characterization.
Collapse
Affiliation(s)
- Qibin Zeng
- Department of Mechanical Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Qicheng Huang
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Hongli Wang
- Department of Mechanical Engineering, National University of Singapore, Singapore, 117576, Singapore
- The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou, 510650, China
| | - Caiwen Li
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Zhen Fan
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Deyang Chen
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Yuan Cheng
- Institute of High-Performance Computing, Agency for Science Technology and Research, Singapore, 138632, Singapore
- Monash Suzhou Research Institute, Suzhou, 215123, China
| | - Kaiyang Zeng
- Department of Mechanical Engineering, National University of Singapore, Singapore, 117576, Singapore
- NUS (Suzhou) Research Institute (NUSRI), Suzhou, 215123, China
| |
Collapse
|
5
|
Local Piezoelectric Properties of Doped Biomolecular Crystals. MATERIALS 2021; 14:ma14174922. [PMID: 34501012 PMCID: PMC8433892 DOI: 10.3390/ma14174922] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Revised: 08/25/2021] [Accepted: 08/26/2021] [Indexed: 11/25/2022]
Abstract
Piezoelectricity is the ability of certain crystals to generate mechanical strain proportional to an external electric field. Though many biomolecular crystals contain polar molecules, they are frequently centrosymmetric, signifying that the dipole moments of constituent molecules cancel each other. However, piezoelectricity can be induced by stereospecific doping leading to symmetry reduction. Here, we applied piezoresponse force microscopy (PFM), highly sensitive to local piezoelectricity, to characterize (01¯0) faces of a popular biomolecular material, α-glycine, doped with other amino acids such as L-alanine and L-threonine as well as co-doped with both. We show that, while apparent vertical piezoresponse is prone to parasitic electrostatic effects, shear piezoelectric activity is strongly affected by doping. Undoped α-glycine shows no shear piezoelectric response at all. The shear response of the L-alanine doped crystals is much larger than those of the L-threonine doped crystals and co-doped crystals. These observations are rationalized in terms of host–guest molecule interactions.
Collapse
|
6
|
Zeng Q, Wang H, Xiong Z, Huang Q, Lu W, Sun K, Fan Z, Zeng K. Nanoscale Ferroelectric Characterization with Heterodyne Megasonic Piezoresponse Force Microscopy. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2003993. [PMID: 33898182 PMCID: PMC8061351 DOI: 10.1002/advs.202003993] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2020] [Revised: 01/10/2021] [Indexed: 05/29/2023]
Abstract
Piezoresponse force microscopy (PFM), as a powerful nanoscale characterization technique, has been extensively utilized to elucidate diverse underlying physics of ferroelectricity. However, intensive studies of conventional PFM have revealed a growing number of concerns and limitations which are largely challenging its validity and applications. In this study, an advanced PFM technique is reported, namely heterodyne megasonic piezoresponse force microscopy (HM-PFM), which uses 106 to 108 Hz high-frequency excitation and heterodyne method to measure the piezoelectric strain at nanoscale. It is found that HM-PFM can unambiguously provide standard ferroelectric domain and hysteresis loop measurements, and an effective domain characterization with excitation frequency up to ≈110 MHz is demonstrated. Most importantly, owing to the high-frequency and heterodyne scheme, the contributions from both electrostatic force and electrochemical strain can be significantly minimized in HM-PFM. Furthermore, a special measurement of difference-frequency piezoresponse frequency spectrum (DFPFS) is developed on HM-PFM and a distinct DFPFS characteristic is observed on the materials with piezoelectricity. By performing DFPFS measurement, a truly existed but very weak electromechanical coupling in CH3NH3PbI3 perovskite is revealed. It is believed that HM-PFM can be an excellent candidate for the ferroelectric or piezoelectric studies where conventional PFM results are highly controversial.
Collapse
Affiliation(s)
- Qibin Zeng
- Department of Mechanical EngineeringNational University of SingaporeSingapore117576Singapore
| | - Hongli Wang
- Department of Mechanical EngineeringNational University of SingaporeSingapore117576Singapore
- The Key Lab of Guangdong for Modern Surface Engineering TechnologyNational Engineering Laboratory for Modern Materials Surface Engineering TechnologyInstitute of New Materials, Guangdong Academy of ScienceGuangzhou510650China
| | - Zhuang Xiong
- MOE Key Laboratory of Low‐Grade Energy Utilization Technologies and Systems, School of Energy & Power EngineeringChongqing UniversityChongqing400044China
| | - Qicheng Huang
- Institute for Advanced Materials, South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Wanheng Lu
- Department of Electrical and Computer EngineeringNational University of SingaporeSingapore117583Singapore
| | - Kuan Sun
- MOE Key Laboratory of Low‐Grade Energy Utilization Technologies and Systems, School of Energy & Power EngineeringChongqing UniversityChongqing400044China
| | - Zhen Fan
- Institute for Advanced Materials, South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Kaiyang Zeng
- Department of Mechanical EngineeringNational University of SingaporeSingapore117576Singapore
- NUS (Suzhou) Research Institute (NUSRI)Suzhou215123China
| |
Collapse
|
7
|
Yarajena SS, Biswas R, Raghunathan V, Naik AK. Quantitative probe for in-plane piezoelectric coupling in 2D materials. Sci Rep 2021; 11:7066. [PMID: 33782418 PMCID: PMC8007818 DOI: 10.1038/s41598-021-86252-9] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2020] [Accepted: 03/05/2021] [Indexed: 11/08/2022] Open
Abstract
Piezoelectric response in two-dimensional (2D) materials has evoked immense interest in using them for various applications involving electromechanical coupling. In most of the 2D materials, piezoelectricity is coupled along the in-plane direction. Here, we propose a technique to probe the in-plane piezoelectric coupling strength in layered nanomaterials quantitively. The method involves a novel approach for in-plane field excitation in lateral Piezoresponse force microscopy (PFM) for 2D materials. Operating near contact resonance has enabled the measurement of the piezoelectric coupling coefficients in the sub pm/V range. Detailed methodology for the signal calibration and the background subtraction when PFM is operated near the contact resonance of the cantilever is also provided. The technique is verified by estimating the in-plane piezoelectric coupling coefficients (d11) for freely suspended MoS2 of one to five atomic layers. For 2D-MoS2 with the odd number of atomic layers, which are non-centrosymmetric, finite d11 is measured. The measurements also indicate that the coupling strength decreases with an increase in the number of layers. The techniques presented would be an effective tool to study the in-plane piezoelectricity quantitatively in various materials along with emerging 2D-materials.
Collapse
Affiliation(s)
- Sai Saraswathi Yarajena
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India.
| | - Rabindra Biswas
- Department of Electrical Communication Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Varun Raghunathan
- Department of Electrical Communication Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Akshay K Naik
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India.
| |
Collapse
|
8
|
Romanyuk KN, Alikin DO, Slautin BN, Tselev A, Shur VY, Kholkin AL. Local electronic transport across probe/ionic conductor interface in scanning probe microscopy. Ultramicroscopy 2020; 220:113147. [PMID: 33130324 DOI: 10.1016/j.ultramic.2020.113147] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2020] [Revised: 09/29/2020] [Accepted: 10/15/2020] [Indexed: 11/25/2022]
Abstract
Charge carrier transport through the probe-sample junction can have substantial consequences for outcomes of electrical and electromechanical atomic-force-microscopy (AFM) measurements. For understanding physical processes under the probe, we carried out conductive-AFM (C-AFM) measurements of local current-voltage (I-V) curves as well as their derivatives on samples of a mixed ionic-electronic conductor Li1-xMn2O4 and developed an analytical framework for the data analysis. The implemented approach discriminates between contributions the highly resistive sample surface layer and the bulk with the account of ion redistribution in the field of the probe. It was found that, with increasing probe voltage, the conductance mechanism in the surface layer transforms from Pool-Frenkel to space-charge-limited current. The surface layer significantly alters the ion dynamics in the sample bulk under the probe, which leads, in particular, to a decrease of the effective electromechanical AFM signal associated with the ionic motion in the sample. The framework can be applied for the analysis of electronic transport mechanisms across the probe/sample interface as well as to uncover the role of the charge transport in the electric field distribution, mechanical, and other responses in AFM measurements of a broad spectrum of conducting materials.
Collapse
Affiliation(s)
- K N Romanyuk
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia; Department of Physics and CICECO - Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro, Portugal.
| | - D O Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - B N Slautin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - A Tselev
- Department of Physics and CICECO - Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro, Portugal
| | - V Ya Shur
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - A L Kholkin
- Department of Physics and CICECO - Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro, Portugal.
| |
Collapse
|
9
|
Kwon O, Seol D, Qiao H, Kim Y. Recent Progress in the Nanoscale Evaluation of Piezoelectric and Ferroelectric Properties via Scanning Probe Microscopy. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1901391. [PMID: 32995111 PMCID: PMC7507502 DOI: 10.1002/advs.201901391] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2019] [Revised: 06/05/2020] [Indexed: 05/21/2023]
Abstract
Piezoelectric and ferroelectric materials have garnered significant interest owing to their excellent physical properties and multiple potential applications. Accordingly, the need for evaluating piezoelectric and ferroelectric properties has also increased. The piezoelectric and ferroelectric properties are evaluated macroscopically using laser interferometers and polarization-electric field loop measurements. However, as the research focus is shifted from bulk to nanosized materials, scanning probe microscopy (SPM) techniques have been suggested as an alternative approach for evaluating piezoelectric and ferroelectric properties. In this Progress Report, the recent progress on the nanoscale evaluation of piezoelectric and ferroelectric properties of diverse materials using SPM-based methods is summarized. Among the SPM techniques, the focus is on recent studies that are related to piezoresponse force microscopy and conductive atomic force microscopy; further, the utilization of these two modes to understand piezoelectric and ferroelectric properties at the nanoscale level is discussed. This work can provide guidelines for evaluating the piezoelectric and ferroelectric properties of materials based on SPM techniques.
Collapse
Affiliation(s)
- Owoong Kwon
- School of Advanced Materials and Engineering & Research Center for Advanced Materials TechnologySungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Daehee Seol
- School of Advanced Materials and Engineering & Research Center for Advanced Materials TechnologySungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Huimin Qiao
- School of Advanced Materials and Engineering & Research Center for Advanced Materials TechnologySungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Yunseok Kim
- School of Advanced Materials and Engineering & Research Center for Advanced Materials TechnologySungkyunkwan University (SKKU)Suwon16419Republic of Korea
| |
Collapse
|