Formation of In2Se3 thin films and nanostructures using electrochemical atomic layer epitaxy

Indium selenide/silver phosphate hollow microsphere S-scheme heterojunctions for photocatalytic hydrogen production with simultaneous degradation of tetracycline

Designing heterojunction photocatalysts with strong interfacial interactions is an effective way to reduce the recombination of photogenerated charge carriers. Here, silver phosphate (Ag₃PO₄) nanoparticles are coupled with hollow flower-like indium selenide (In₂Se₃) microspheres by a facile Ostwald ripening and in-situ growth method, resulting in the construction of In₂Se₃/Ag₃PO₄ hollow microsphere step-scheme (S-scheme) heterojunction with a large contact interface. The flower-like In₂Se₃ with hollow and porous structure provides a large specific surface area and numerous active sites for photocatalytic reactions to take place. The photocatalytic activity was tested by measuring the hydrogen evolution from antibiotic wastewater, and the H₂ evolution rate of In₂Se₃/Ag₃PO₄ reached 4206.4 µmol g^-1h^-1 under visible light, which is approximately 2.8 times greater than that of In₂Se₃. In addition, the amount of tetracycline (TC) degradation when it was used as a sacrificial agent is about 54.4% after 1 h. On the one hand, Se-P chemical bonds act as electron transfer channels in the S-scheme heterojunctions, which can facilitate the migration and separation of photogenerated charge carriers. On the other hand, the S-scheme heterojunctions can retain the useful holes and electrons with higher redox capacities, which is very favorable for the generation of more •OH radicals and the photocatalytic activity is greatly enhanced. This work provides an alternative design approach for photocatalysts toward hydrogen evolution in antibiotic wastewater.

Solution-phase synthesis of γ-In2Se3 nanoparticles for highly efficient photocatalytic hydrogen generation under simulated sunlight irradiation

Hexagonal indium selenide (In₂Se₃) nanoparticles were successfully synthesized by a hot-injection method using triethylene glycol as solvent, which have superior and stable photocatalytic hydrogen generation under simulated sunlight irradiation.

Thermal replacement reaction: a novel route for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-nanostructures by replacing cadmium with indium and their photoelectrochemical and photocatalytic performances

A novel route called thermal replacement reaction was demonstrated for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-structural nanowires on FTO glass by replacing the element cadmium with indium for the first time. The indium layer was coated on the surface of the ZnO nanowires beforehand, then CdSe quantum dots were deposited onto the coated indium layer, and finally the CdSe quantum dots were converted to γ-In2Se3 quantum dots by annealing under vacuum at 350 °C for one hour. The prepared ZnO@γ-In2Se3 hetero-nanostructures exhibit stable photoelectrochemical properties that can be ascribed to the protection of the In2O3 layer between the ZnO nanowire and γ-In2Se3 quantum dots and better photocatalytic performance in the wide wavelength region from 400 nm to nearly 750 nm. This strategy for preparing the ZnO@γ-In2Se3 hetero-nanostructures not only enriches our understanding of the single replacement reaction where the active element cadmium can be replaced with indium, but also opens a new way for the in situ conversion of cadmium-based to eco-friendly indium-based nano-devices.

Wide range photodetector based on catalyst free grown indium selenide microwires

We first report the catalyst free growth of indium selenide microwires through a facile approach in a horizontal tube furnace using indium and selenium elemental powders as precursors. The synthesized microwires are γ-phase, high quality, single crystalline and grown along the [112̅0] direction. The wires have a uniform diameter of ∼1 μm and lengths of several micrometers. Photodetectors fabricated from synthesized microwires show reliable and stable photoresponse exhibiting a photoresponsivity of 0.54 A/W, external quantum efficiency of 1.23 at 633 nm with 4 V bias. The photodetector has a reasonable response time of 0.11 s and specific detectivity of 3.94 × 10(10) Jones at 633 nm with a light detection range from 350 to 1050 nm, covering the UV-vis-NIR region. The photoresponse shown by single wire is attributed to direct band gap (Eg = 1.3 eV) and superior single crystalline quality. The photoresponsive studies of single microwires clearly suggest the use of this new and facile growth technique without using catalysts for fabrication of indium selenide microwires in next-generation sensors and detectors for commercial and military applications.

Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors

The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications.

Control of III/VI Ratios in the Preparation of ln2Se3 thin Films

CuInSe2 (CIS) thin films on glass substrates were successfully grown by the metal organic chemical vapour deposition method by using three precursors [Cu-precursor, trimethyl-indium (TMI) and hydrogen selenide (H2Se)]. The flow rates of TMI and H2Se can be adjusted independently to gain different lll/VI ratios, which is different from the single-precursor technique. Good chalcopyrite phase from CIS films was demonstrated by X-ray diffraction. The optical band gap of CIS thin films can be adjusted by controlling the growth conditions.

Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.

Mechanism of film growth of tellurium by electrochemical deposition in the presence and absence of cadmium ions

The growth morphology and the kinetics of a thin film of Te on Au during electrochemical deposition at -62 mV (vs Ag/AgCl/3 M NaCl) have been studied. The deposition conditions are similar to those used previously by us to grow nanowires inside Au nanotubes by electrochemical deposition in the presence of Cd ions (Cd(2+)). By using electrochemical deposition on a planar Au electrode, we explored the growth of the Te film for two conditions: in the presence of Cd(2+) (0.1 mM TeO(2) + 1 mM CdSO(4) + 50 mM H(2)SO(4) solution) and in the absence of Cd(2+) (0.1 mM TeO(2) + 50 mM H(2)SO(4) solution). We used several surface investigation techniques to study the growth such as: in situ electrochemical atomic force microscopy (EC-AFM), in situ electrochemical surface plasmon resonance (EC-SPR), electrochemical methods, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). In the presence of Cd(2+), in situ electrochemical atomic microscopy showed that Cd(2+) acted as a mediator at the early deposition stage and caused smoothing of the Te deposit obtained. In the absence of Cd(2+), Te had an island growth. The electrochemical surface plasmon resonance showed that the deposit was characterized by a slower deposition rate in the presence of Cd(2+) than in the absence of Cd(2+). Additionally, the thickness of the film was evaluated using EC-AFM measurements, electrochemical stripping analysis, and EC-SPR. The results obtained from all three measurements agree well with the Te film obtained in the presence of Cd(2+), where a continuous and uniform film was formed. In the presence of Cd(2+), a Te film with a thickness of 1.04 nm and atomically flat surface was deposited on an ultraflat Au surface. The XPS spectrum showed no significant amount of Cd in the deposit, indicating that the Cd ion acted as a mediator and not as a co-deposition element.

CdTe electrodeposition on InP(100) via electrochemical atomic layer epitaxy (EC-ALE): studies using UHV-EC

The II-VI compound semiconductor CdTe was electrodeposited on InP(100) surfaces using electrochemical atomic layer epitaxy (EC-ALE). CdTe was deposited on a Te-modified InP(100) surface using this atomic layer by atomic layer methodology. The deposit started with formation of an atomic layer of Te on the InP(100) surface, as Cd was observed not to form an underpotential deposition (UPD) layer on InP(100), although it was found to UPD on Te atomic layers. On the In-terminated 'clean' InP(100) surface, Te was deposited at -0.80 V from a 0.1 mM solution of TeO2, resulting in formation of a Te atomic layer and some small amount of bulk Te. The excess bulk Te was then removed by reduction in blank solution at -0.90 V, leaving a Te atomic layer. Given the presences of the Te atomic layer, it was then possible to form an atomic layer of Cd by UPD at -0.58 V to complete the formation of a CdTe monolayer by EC-ALE. That cycle was then repeated to demonstrate the applicability of the cycle to the formation of CdTe nanofilms. Auger spectra recorded after the first three cycles of CdTe deposition on InP(100) were consistent with the layer-by-layer CdTe growth. It is interesting to note that Cd did not form a UPD deposit on the In-terminated InP(100) surface and only formed Cd clusters at an overpotential. This issue is probably related to the inability of the Cd and In to form a stable surface compound.

Fabrication of nanocables by electrochemical deposition inside metal nanotubes

We report a novel route for fabricating Au-Te nanocables. Using nanoporous polycarbonate tract-etching (PCTE) membrane as the template, Au nanotubes were fabricated by electroless Au deposition inside the nanopores of the PCTE membrane. Using the Au nanotube membrane as a second template, Te was deposited on the surfaces of the Au nanotubes by slow electrochemical deposition, taking advantage of underpotential deposition (UPD). The deposition rate was sufficiently slow to radially grow Te nanotubes coaxially within the Au nanotubes to form nanocables.