Ultrafast electron and lattice dynamics in semiconductors at high excited carrier densities

Ultrafast Long-Distance Electron-Hole Plasma Expansion in GaAs Mediated by Stimulated Emission and Reabsorption of Photons

Electron-hole plasma expansion with velocities exceeding c/50 and lasting over 10 ps at 300 K was evidenced by time-resolved terahertz spectroscopy. This regime, in which the carriers are driven over >30  μm is governed by stimulated emission due to low-energy electron-hole pair recombination and reabsorption of the emitted photons outside the plasma volume. At low temperatures a speed of c/10 was observed in the regime where the excitation pulse spectrally overlaps with emitted photons, leading to strong coherent light-matter interaction and optical soliton propagation effects.

Laser ablation of silicon with THz bursts of femtosecond pulses

In this work, we performed an experimental investigation supported by a theoretical analysis, to improve knowledge on the laser ablation of silicon with THz bursts of femtosecond laser pulses. Laser ablated craters have been created using 200 fs pulses at a wavelength of 1030 nm on silicon samples systematically varying the burst features and comparing to the normal pulse mode (NPM). Using bursts in general allowed reducing the thermal load to the material, however, at the expense of the ablation rate. The higher the number of pulses in the bursts and the lower the intra-burst frequency, the lower is the specific ablation rate. However, bursts at 2 THz led to a higher specific ablation rate compared to NPM, in a narrow window of parameters. Theoretical investigations based on the numerical solution of the density-dependent two temperature model revealed that lower lattice temperatures are reached with more pulses and lower intra-burst frequencies, thus supporting the experimental evidence of the lower thermal load in burst mode (BM). This is ascribed to the weaker transient drop of reflectivity, which suggests that with bursts less energy is transferred from the laser to the material. This also explains the trends of the specific ablation rates. Moreover, we found that two-photon absorption plays a fundamental role during BM processing in the THz frequency range.

Broadband femtosecond spectroscopic ellipsometry

We present a setup for time-resolved spectroscopic ellipsometry in a pump-probe scheme using femtosecond laser pulses. As a probe, the system deploys supercontinuum white light pulses that are delayed with respect to single-wavelength pump pulses. A polarizer-sample-compensator-analyzer configuration allows ellipsometric measurements by scanning the compensator azimuthal angle. The transient ellipsometric parameters are obtained from a series of reflectance-difference spectra that are measured for various pump-probe delays and polarization (compensator) settings. The setup is capable of performing time-resolved spectroscopic ellipsometry from the near-infrared through the visible to the near-ultraviolet spectral range at 1.3 eV-3.6 eV. The temporal resolution is on the order of 100 fs within a delay range of more than 5 ns. We analyze and discuss critical aspects such as fluctuations of the probe pulses and imperfections of the polarization optics and present strategies deployed for circumventing related issues.

Four-wave-mixing experiments with seeded free electron lasers

The development of free electron laser (FEL) sources has provided an unprecedented bridge between the scientific communities working with ultrafast lasers and extreme ultraviolet (XUV) and X-ray radiation. Indeed, in recent years an increasing number of FEL-based applications have exploited methods and concepts typical of advanced optical approaches. In this context, we recently used a seeded FEL to demonstrate a four-wave-mixing (FWM) process stimulated by coherent XUV radiation, namely the XUV transient grating (X-TG). We hereby report on X-TG measurements carried out on a sample of silicon nitride (Si₃N₄). The recorded data bears evidence for two distinct signal decay mechanisms: one occurring on a sub-ps timescale and one following slower dynamics extending throughout and beyond the probed timescale range (100 ps). The latter is compatible with a slower relaxation (time decay > ns), that may be interpreted as the signature of thermal diffusion modes. From the peak intensity of the X-TG signal we could estimate a value of the effective third-order susceptibility which is substantially larger than that found in SiO₂, so far the only sample with available X-TG data. Furthermore, the intensity of the time-coincidence peak shows a linear dependence on the intensity of the three input beams, indicating that the measurements were performed in the weak field regime. However, the timescale of the ultrafast relaxation exhibits a dependence on the intensity of the XUV radiation. We interpreted the observed behaviour as the generation of a population grating of free-electrons and holes that, on the sub-ps timescale, relaxes to generate lattice excitations. The background free detection inherent to the X-TG approach allowed the determination of FEL-induced electron dynamics with a sensitivity largely exceeding that of transient reflectivity and transmissivity measurements, usually employed for this purpose.

Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization

We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Developing ab initio GW calculations of first to third order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While the electric-field enhancement due to the semiconductor/vacuum interface has a similar effect for all NW segments, the second and third order multiphoton transitions in the band structure of WZ InAs are highly anisotropic in contrast to ZB InAs. As the crystal phase of NWs can be precisely and reliably tailored, our findings open up for new semiconductor optoelectronics with controllable nanoscale emission of electrons through vacuum or dielectric barriers.

Ablation dynamics of Co/ZnS targets under double pulse femtosecond laser irradiation

The ablation dynamics of Co/ZnS is highly sensitive to the details of an ultrafast laser pulse irradiation sequence.

Relaxation of highly excited carriers in wide-gap semiconductors

The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show that the non-equilibrium distributions of electrons and holes have a customary Fermi-like shape with some effective temperature but also possess a high-energy non-Fermian 'tail'. The latter may extend deep into the conduction and valence bands while the Fermi-like component is localized within a small energy range just above the edge of the band gap. The effective temperature, effective chemical potential, and the shape of the high-energy component are governed by the process of electron-phonon interactions as well as by the rates of carrier generation and inter-band radiative recombination.

Ultrafast dynamics of surface plasmons in InAs by time-resolved infrared nanospectroscopy

We report on time-resolved mid-infrared (mid-IR) near-field spectroscopy of the narrow bandgap semiconductor InAs. The dominant effect we observed pertains to the dynamics of photoexcited carriers and associated surface plasmons. A novel combination of pump-probe techniques and near-field nanospectroscopy accesses high momentum plasmons and demonstrates efficient, subpicosecond photomodulation of the surface plasmon dispersion with subsequent tens of picoseconds decay under ambient conditions. The photoinduced change of the probe intensity due to plasmons in InAs is found to exceed that of other mid-IR or near-IR media by 1-2 orders of magnitude. Remarkably, the required control pulse fluence is as low as 60 μJ/cm(2), much smaller than fluences of ∼ 1-10 mJ/cm(2) previously utilized in ultrafast control of near-IR plasmonics. These low excitation densities are easily attained with a standard 1.56 μm fiber laser. Thus, InAs--a common semiconductor with favorable plasmonic properties such as a low effective mass--has the potential to become an important building block of optically controlled plasmonic devices operating at infrared frequencies.

Temporal cross-correlation of x-ray free electron and optical lasers using soft x-ray pulse induced transient reflectivity

The recent development of x-ray free electron lasers providing coherent, femtosecond-long pulses of high brilliance and variable energy opens new areas of scientific research in a variety of disciplines such as physics, chemistry, and biology. Pump-probe experimental techniques which observe the temporal evolution of systems after optical or x-ray pulse excitation are one of the main experimental schemes currently in use for ultrafast studies. The key challenge in these experiments is to reliably achieve temporal and spatial overlap of the x-ray and optical pulses. Here we present measurements of the x-ray pulse induced transient change of optical reflectivity from a variety of materials covering the soft x-ray photon energy range from 500eV to 2000eV and outline the use of this technique to establish and characterize temporal synchronization of the optical-laser and FEL x-ray pulses.

Carrier Relaxation and Lattice Heating Dynamics in Silicon Revealed by Femtosecond Electron Diffraction

We report on the use of femtosecond electron diffraction to resolve the dynamics of electron-phonon relaxation in silicon. Nanofabricated free-standing membranes of polycrystalline silicon were excited below the damage threshold with 387 nm light at a fluence of 5.6 mJ/cm2 absorbed (corresponding to a carrier density of 2.2 x 10(21) cm(-3)). The diffraction pattern was captured over a range of delay times with a time resolution of 350 fs. All of the detected Bragg peaks exhibited intensity loss with a time constant of less than 2 ps. Beyond the initial decay, there was no further change in the diffracted intensity up to 700 ps. We find that the loss of intensity in the diffracted orders is accounted for by the Debye-Waller effect on a time scale indicative of a thermally driven process as opposed to an electronically driven one. Furthermore, the relaxation time constant is consistent with the excitation regime where the phonon emission rate is reduced due to carrier screening.

Femtosecond electron diffraction: 'making the molecular movie'

Femtosecond electron diffraction (FED) has the potential to directly observe transition state processes. The relevant motions for this barrier-crossing event occur on the hundred femtosecond time-scale. Recent advances in the development of high-flux electron pulse sources with the required time resolution and sensitivity to capture barrier-crossing processes are described in the context of attaining atomic level details of such structural dynamics-seeing chemical events as they occur. Initial work focused on the ordered-to-disordered phase transition of Al under strong driving conditions for which melting takes on nm or molecular scale dimensions. This work has been extended to Au, which clearly shows a separation in time-scales for lattice heating and melting. It also demonstrates that superheated face-centred cubic (FCC) metals melt through thermal mechanisms involving homogeneous nucleation to propagate the disordering process. A new concept exploiting electron-electron correlation is introduced for pulse characterization and determination of t=0 to within 100fs as well as for spatial manipulation of the electron beam. Laser-based methods are shown to provide further improvements in time resolution with respect to pulse characterization, absolute t=0 determination, and the potential for electron acceleration to energies optimal for time-resolved diffraction.

An Atomic-Level View of Melting Using Femtosecond Electron Diffraction

We used 600-femtosecond electron pulses to study the structural evolution of aluminum as it underwent an ultrafast laser-induced solid-liquid phase transition. Real-time observations showed the loss of long-range order that was present in the crystalline phase and the emergence of the liquid structure where only short-range atomic correlations were present; this transition occurred in 3.5 picoseconds for thin-film aluminum with an excitation fluence of 70 millijoules per square centimeter. The sensitivity and time resolution were sufficient to capture the time-dependent pair correlation function as the system evolved from the solid to the liquid state. These observations provide an atomic-level description of the melting process, in which the dynamics are best understood as a thermal phase transition under strongly driven conditions.

Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses

Soon after it was discovered that intense laser pulses of nanosecond duration from a ruby laser could anneal the lattice of silicon, it was established that this so-called pulsed laser annealing is a thermal process. Although the radiation energy is transferred to the electrons, the electrons transfer their energy to the lattice on the timescale of the excitation. The electrons and the lattice remain in equilibrium and the laser simply 'heats' the solid to the melting temperature within the duration of the laser pulse. For ultrashort laser pulses in the femtosecond regime, however, thermal processes (which take several picoseconds) and equilibrium thermodynamics cannot account for the experimental data. On excitation with femtosecond laser pulses, the electrons and the lattice are driven far out of equilibrium and disordering of the lattice can occur because the interatomic forces are modified due to the excitation of a large (10% or more) fraction of the valence electrons to the conduction band. This review focuses on the nature of the non-thermal transitions in semiconductors under femtosecond laser excitation.