Off-axis holography with a crystal beam splitter

Advanced Electron Holography Applied to Electromagnetic Field Study in Materials Science

Advances and applications of electron holography to the study of electromagnetic fields in various functional materials are presented. In particular, the development of split-illumination electron holography, which introduces a biprism in the illumination system of a holography electron microscope, enables highly accurate observations of electromagnetic fields and the expansion of the observable area. First, the charge distributions on insulating materials were studied by using split-illumination electron holography and including a mask in the illumination system. Second, the three-dimensional spin configurations of skyrmion lattices in a helimagnet were visualized by using a high-voltage holography electron microscope. Third, the pinning of the magnetic flux lines in a high-temperature superconductor YBa₂ Cu₃ O_7-y was analyzed by combining electron holography and scanning ion microscopy. Finally, the dynamic accumulation and collective motions of electrons around insulating biomaterial surfaces were observed by utilizing the amplitude reconstruction processes of electron holography.

A nanofabricated, monolithic, path-separated electron interferometer

Progress in nanofabrication technology has enabled the development of numerous electron optic elements for enhancing image contrast and manipulating electron wave functions. Here, we describe a modular, self-aligned, amplitude-division electron interferometer in a conventional transmission electron microscope. The interferometer consists of two 45-nm-thick silicon layers separated by 20 μm. This interferometer is fabricated from a single-crystal silicon cantilever on a transmission electron microscope grid by gallium focused-ion-beam milling. Using this interferometer, we obtain interference fringes in a Mach-Zehnder geometry in an unmodified 200 kV transmission electron microscope. The fringes have a period of 0.32 nm, which corresponds to the [1̄1̄1] lattice planes of silicon, and a maximum contrast of 15%. We use convergent-beam electron diffraction to quantify grating alignment and coherence. This design can potentially be scaled to millimeter-scale, and used in electron holography. It could also be applied to perform fundamental physics experiments, such as interaction-free measurement with electrons.

Diffraction of 0.5keV electrons from free-standing transmission gratings

A nanostructured grating was used to diffract a low-energy (500 eV) electron beam, and the current transmitted into the zeroth diffraction order was greater than 5% of the incident beam current. This diffraction efficiency indicates that the 55-nm-wide grating bars absorb electrons but the 45-nm-wide slots between bars transmit electron de Broglie waves coherently. The diffraction patterns can be asymmetric, and can be explained by a model that incorporates an electrostatic potential energy for electrons within 20 nm of the grating structure calculated by the method of images.

Compositional analysis based on electron holography and a chemically sensitive reflection

A method for compositional analysis of low-dimensional heterostructures is presented. The suggested procedure is based on electron holography and the exploitation of the chemically sensitive (0 0 2) reflection. We apply an off-axis imaging condition with the (0 0 2) beam strongly excited and centered on the optic axis. The first side band of the hologram is centered using an "empty" reference hologram obtained for a hole of the specimen. From the centered side band we use the phase of the central (0 0 0) and the amplitude of the (0 0 2) reflections to evaluate the local composition and the local specimen thickness in an iterative and self-consistent way. Delocalization effects that lead to a shift of the spatial information of (0 0 0) and (0 0 2) reflections are taken into account. The application of the procedure is demonstrated with an AlAs/GaAs(0 0 1) superlattice with a period of 5 nm. The concentration profiles obtained are discussed in relation to segregation. The measured segregation efficiency is R = 0.51 +/- 0.02.