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Li T, Rodriguez EE. Multiscale characterizations of structural evolution in mesoporous CeO 2. Chem Commun (Camb) 2024; 60:7366-7369. [PMID: 38919147 DOI: 10.1039/d4cc02128b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
In situ ultra-small-angle and wide-angle X-ray scattering enables simultaneous tracking of the structural parameters of mesoporous CeO2 from the atomic scale to the micron-size scale. This multiscale approach provides a path to better understand structure-property relationships in mesoporous polycrystalline materials under dynamic conditions such as high temperature cycling.
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Affiliation(s)
- Tianyu Li
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742-2115, USA.
| | - Efrain E Rodriguez
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742-2115, USA.
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2
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Wang J, Guan X, Zheng H, Zhao L, Jiang R, Zhao P, Zhang Y, Hu J, Li P, Jia S, Wang J. Size-Dependent Phase Transition in Ultrathin Ga 2O 3 Nanowires. NANO LETTERS 2023; 23:7364-7370. [PMID: 37530420 DOI: 10.1021/acs.nanolett.3c01751] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Gallium oxide (Ga2O3) has attracted extensive attention as a potential candidate for low-dimensional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its wide bandgap, controllable doping, and low cost. The structural stability of nanoscale Ga2O3 is the key parameter for designing and constructing a MOSFET, which however remains unexplored. Using in situ transmission electron microscopy, we reveal the size-dependent phase transition of sub-2 nm Ga2O3 nanowires. Based on theoretical calculations, the transformation pathways from the initial monoclinic β-phase to an intermediate cubic γ-phase and then back to the β-phase have been mapped and identified as a sequence of Ga cation migrations. Our results provide fundamental insights into the Ga2O3 phase stability within the nanoscale, which is crucial for advancing the miniaturization, light weight, and integration of wide-bandgap semiconductor devices.
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Affiliation(s)
- Jiaheng Wang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Xiaoxi Guan
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - He Zheng
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
- Wuhan University Shenzhen Research Institute, Shenzhen, Guangdong 518057, China
| | - Ligong Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Renhui Jiang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Peili Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Ying Zhang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Jie Hu
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Pei Li
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Shuangfeng Jia
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Jianbo Wang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
- Core Facility of Wuhan University, Wuhan 430072, China
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3
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Fleming R, Gonçalves S, Davarpanah A, Radulov I, Pfeuffer L, Beckmann B, Skokov K, Ren Y, Li T, Evans J, Amaral J, Almeida R, Lopes A, Oliveira G, Araújo JP, Apolinário A, Belo JH. Tailoring Negative Thermal Expansion via Tunable Induced Strain in La-Fe-Si-Based Multifunctional Material. ACS APPLIED MATERIALS & INTERFACES 2022; 14:43498-43507. [PMID: 36099579 PMCID: PMC9773235 DOI: 10.1021/acsami.2c11586] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Accepted: 08/29/2022] [Indexed: 06/15/2023]
Abstract
Zero thermal expansion (ZTE) composites are typically designed by combining positive thermal expansion (PTE) with negative thermal expansion (NTE) materials acting as compensators and have many diverse applications, including in high-precision instrumentation and biomedical devices. La(Fe1-x,Six)13-based compounds display several remarkable properties, such as giant magnetocaloric effect and very large NTE at room temperature. Both are linked via strong magnetovolume coupling, which leads to sharp magnetic and volume changes occurring simultaneously across first-order phase transitions; the abrupt nature of these changes makes them unsuitable as thermal expansion compensators. To make these materials more useful practically, the mechanisms controlling the temperature over which this transition occurs and the magnitude of contraction need to be controlled. In this work, ball-milling was used to decrease particles and crystallite sizes and increase the strain in LaFe11.9Mn0.27Si1.29Hx alloys. Such size and strain tuning effectively broadened the temperature over which this transition occurs. The material's NTE operational temperature window was expanded, and its peak was suppressed by up to 85%. This work demonstrates that induced strain is the key mechanism controlling these materials' phase transitions. This allows the optimization of their thermal expansion toward room-temperature ZTE applications.
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Affiliation(s)
- Rafael
Oliveira Fleming
- Institute
of Physics of Advanced Materials, Nanotechnology and Nanophotonics
(IFIMUP), Departamento de Física
e Astronomia da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal
| | - Sofia Gonçalves
- Institute
of Physics of Advanced Materials, Nanotechnology and Nanophotonics
(IFIMUP), Departamento de Física
e Astronomia da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal
| | - Amin Davarpanah
- Institute
of Material Science, Technical University
of Darmstadt, 64287 Darmstadt, Germany
- Department
of Physics and CICECO, University of Aveiro, Universitary Campus of Santiago, 3810-193 Aveiro, Portugal
| | - Iliya Radulov
- Institute
of Material Science, Technical University
of Darmstadt, 64287 Darmstadt, Germany
| | - Lukas Pfeuffer
- Institute
of Material Science, Technical University
of Darmstadt, 64287 Darmstadt, Germany
| | - Benedikt Beckmann
- Institute
of Material Science, Technical University
of Darmstadt, 64287 Darmstadt, Germany
| | - Konstantin Skokov
- Institute
of Material Science, Technical University
of Darmstadt, 64287 Darmstadt, Germany
| | - Yang Ren
- Department
of Physics, City University of Hong Kong, Kowloon 999077 Hong Kong, China
| | - Tianyi Li
- X-ray
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - John Evans
- Department
of Chemistry, Durham University, South Road, Durham DH1 3LE, United
Kingdom
| | - João Amaral
- Department
of Physics and CICECO, University of Aveiro, Universitary Campus of Santiago, 3810-193 Aveiro, Portugal
| | - Rafael Almeida
- Institute
of Physics of Advanced Materials, Nanotechnology and Nanophotonics
(IFIMUP), Departamento de Física
e Astronomia da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal
| | - Armandina Lopes
- Institute
of Physics of Advanced Materials, Nanotechnology and Nanophotonics
(IFIMUP), Departamento de Física
e Astronomia da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal
| | - Gonçalo Oliveira
- Institute
of Physics of Advanced Materials, Nanotechnology and Nanophotonics
(IFIMUP), Departamento de Física
e Astronomia da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal
| | - João Pedro Araújo
- Institute
of Physics of Advanced Materials, Nanotechnology and Nanophotonics
(IFIMUP), Departamento de Física
e Astronomia da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal
| | - Arlete Apolinário
- Institute
of Physics of Advanced Materials, Nanotechnology and Nanophotonics
(IFIMUP), Departamento de Física
e Astronomia da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal
| | - João Horta Belo
- Institute
of Physics of Advanced Materials, Nanotechnology and Nanophotonics
(IFIMUP), Departamento de Física
e Astronomia da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal
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Lin K, Li Q, Yu R, Chen J, Attfield JP, Xing X. Chemical pressure in functional materials. Chem Soc Rev 2022; 51:5351-5364. [PMID: 35735127 DOI: 10.1039/d1cs00563d] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Chemical pressure, a strange but familiar concept, is a lattice internal force caused by lattice strain with chemical modifications and arouses great interest due to its diversity and efficiency to synthesize new compounds and tune functional materials. Different from physical pressure loaded by an external force that is positive, chemical pressure can be either positive or negative (contract a lattice or expand it), often through flexible and mild chemical synthesis strategies, which are particularly important as a degree of freedom to manipulate material behaviors. In this tutorial review, we summarize the features of chemical pressure as a methodology and demonstrate its role in synthesizing and discovering some typical magnetically, electrically, and thermally responsive functional materials. The measure of chemical pressure using experimental lattice strain and elastic modulus was proposed, which can be used for quantitative descriptions of the correlation between lattice distortion and properties. From a lattice strain point of view, we classify chemical pressure into different categories: (i) chemical substitution, (ii) chemical intercalation/de-intercalation, (iii) size effect, and (iv) interface constraint, etc. Chemical pressure affects chemical bonding and rationalizes the crystal structure by modifying the electronic structure of solids, regulating the lattice symmetry, local structure, phonon structure effects etc., emerging as a general and effective method for synthesizing new compounds and tuning functional materials.
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Affiliation(s)
- Kun Lin
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Qiang Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Runze Yu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Jun Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
| | - J Paul Attfield
- Centre for Science at Extreme Conditions and School of Chemistry, University of Edinburgh, Edinburgh EH9 3FD, UK.
| | - Xianran Xing
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
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5
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Li Q, Lin K, Liu Z, Hu L, Cao Y, Chen J, Xing X. Chemical Diversity for Tailoring Negative Thermal Expansion. Chem Rev 2022; 122:8438-8486. [PMID: 35258938 DOI: 10.1021/acs.chemrev.1c00756] [Citation(s) in RCA: 22] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
Negative thermal expansion (NTE), referring to the lattice contraction upon heating, has been an attractive topic of solid-state chemistry and functional materials. The response of a lattice to the temperature field is deeply rooted in its structural features and is inseparable from the physical properties. For the past 30 years, great efforts have been made to search for NTE compounds and control NTE performance. The demands of different applications give rise to the prominent development of new NTE systems covering multifarious chemical substances and many preparation routes. Even so, the intelligent design of NTE structures and efficient tailoring for lattice thermal expansion are still challenging. However, the diverse chemical routes to synthesize target compounds with featured structures provide a large number of strategies to achieve the desirable NTE behaviors with related properties. The chemical diversity is reflected in the wide regulating scale, flexible ways of introduction, and abundant structure-function insights. It inspires the rapid growth of new functional NTE compounds and understanding of the physical origins. In this review, we provide a systematic overview of the recent progress of chemical diversity in the tailoring of NTE. The efficient control of lattice and deep structural deciphering are carefully discussed. This comprehensive summary and perspective for chemical diversity are helpful to promote the creation of functional zero-thermal-expansion (ZTE) compounds and the practical utilization of NTE.
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Affiliation(s)
- Qiang Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Kun Lin
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhanning Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Lei Hu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Yili Cao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Xianran Xing
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
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Luo Y, Qiao Y, Gao Q, Wang J, Guo J, Ren X, Chao M, Sun Q, Jia Y, Liang E. Anomalous Thermal Expansion in Ta 2WO 8 Oxide Semiconductor over a Wide Temperature Range. Inorg Chem 2021; 60:17758-17764. [PMID: 34797971 DOI: 10.1021/acs.inorgchem.1c02377] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Expansion of material is one of the major impediments in the high precision instrument and engineering field. Low/zero thermal expansion compounds have drawn great attention because of their important scientific significance and enormous application value. However, the realization of low thermal expansion over a wide temperature range is still scarce. In this study, a low thermal expansion over a wide temperature range has been observed in the Ta2WO8 oxide semiconductor. It is a balance effect of the negative thermal expansion of the a axis and the positive thermal expansion of the b axis and the c axis to achieve low thermal expansion behavior. The results of the means of variable temperature X-ray diffraction and variable pressure Raman spectroscopy analysis indicated that the transverse vibration of bridging oxygen atoms is the driving force, which is corresponding to the low-frequency lattice modes with a negative Grüneisen parameter. The present study provides one wide band gap semiconductor Ta2WO8 with anomalous thermal expansion behavior.
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Affiliation(s)
- Yan Luo
- Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yongqiang Qiao
- Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Qilong Gao
- Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Jiaqi Wang
- Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Juan Guo
- Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xiao Ren
- Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Mingju Chao
- Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Qiang Sun
- International Laboratory for Quantum Functional Materials of Henan, Zhengzhou University, Zhengzhou 450052, China
| | - Yu Jia
- Key Laboratory of Special Functional Materials of Ministry of Education of China, and School of Materials Science and Engineering, Henan University, Henan 475004, China.,International Laboratory for Quantum Functional Materials of Henan, Zhengzhou University, Zhengzhou 450052, China
| | - Erjun Liang
- Key Laboratory of Materials Physics of Ministry of Education and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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